FQPF47P06YDTU

DATA SHEET www.onsemi.com MOSFET – P-Channel, QFET) -60 V, -30 A, 26 mW VDSS RDS(ON) MAX ID MAX −60 V 26 mW @ −10 V −30 A FQPF47P06, FQPF47P06YDTU S G Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D P−Channel MOSFET Features • • • • • −30 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V, ID = −15 A Low Gate Charge (Typ. 84 nC) Low Crss (Typ. 320 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating G D S TO−220F TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT G D S TO−220−3LD LF CASE 340BJ MARKING DIAGRAM $Y&Z&3&K FQPF 47P06 $Y &Z &3 &K FQPF47P06 = onsemi Logo = Assembly Plant Code = 3−Digit Plant Code = 2−Digits Lot Run Traceability Code = Specific Device Code ORDERING INFORMATION Package Shipping FQPF47P06 TO−220−3 (Pb−Free) 1000 Units / Tube FQPF47P06YDTU TO−220−3 (Pb−Free) 800 Units / Tube Device © Semiconductor Components Industries, LLC, 2001 February, 2022 − Rev. 3 1 Publication Order Number: FQPF47P06/D FQPF47P06, FQPF47P06YDTU ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Symbol VDSS ID Parameter FQPF47P06 / FQPF47P06YDTU Unit −60 V − Continuous (TC = 25°C) −30 A − Continuous (TC = 100°C) −21.2 A − Pulsed −120 A Drain−Source Voltage Drain Current IDM Drain Current (Note 1) VGSS Gate−Source Voltage + 25 V EAS Single Pulsed Avalanche Energy (Note 2) 820 mJ IAR Avalanche Current (Note 1) −30 A EAR Repetitive Avalanche Energy (Note 1) 6.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) −7.0 V/ns 62 W 0.41 W/°C −55 to +175 °C 300 °C PD Power Dissipation (TC = 25°C) − Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.06 mH, IAS = −30 A, VDD = −25 V, RG = 25 W, Starting TJ = 25°C 3. ISD ≤ −47 A, di/dt ≤ 300A/ms, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS Symbol Characteristic Typ Max Unit RqJC Thermal Resistance, Junction−to−Case − 2.42 °C/W RqJA Thermal Resistance, Junction−to−Ambient − 62.5 °C/W www.onsemi.com 2 FQPF47P06, FQPF47P06YDTU ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit −60 −− − V OFF CHARACTERISTICS BVDSS DBVDSS / DTJ IDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = −250 mA Breakdown Voltage Temperature Coefficient ID = −250 mA, Referenced to 25°C − −0.06 − V/°C Zero Gate Voltage Drain Current VDS = −60 V, VGS = 0 V − − −1 mA VDS = −48 V, TC = 150°C − − −10 mA IGSSF Gate−Body Leakage Current, Forward VGS = −25 V, VDS = 0 V − − −100 nA IGSSR Gate−Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V − − 100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS = VGS, ID = −250 mA −2.0 − −4.0 V RDS(on) Static Drain−Source On−Resistance VGS = −10 V, ID = −15 A − 0.021 0.026 W Forward Transconductance VDS = −30 V, ID = −15 A (Note 4) − 19 − S VDS = −25 V, VGS = 0 V, f = 1.0 MHz − 2800 3600 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 1300 1700 pF Crss Reverse Transfer Capacitance − 320 420 pF − 50 110 ns − 450 910 ns − 100 210 ns − 195 400 ns − 84 110 nC − 18 − nC − 44 − nC Maximum Continuous Drain−Source Diode Forward Current − − −30 A ISM Maximum Pulsed Drain−Source Diode Forward Current − − −120 A VSD SWITCHING CHARACTERISTICS td(on) Turn−On Delay Time tr Turn−On Rise Time td(off) Turn−Off Delay Time tf Turn−Off Fall Time Qg Total Gate Charge Qgs Gate−Source Charge Qgd Gate−Drain Charge VDD = −30 V, ID = −23.5 A, RG = 25 W (Note 4, 5) VDS = −48 V, ID = −47 A, VGS = −10 V (Note 4, 5) DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING IS Drain−Source Diode Forward Voltage VGS = 0 V, IS = −30 A − − −4.0 V trr Reverse Recovery Time − 130 − ns Qrr Reverse Recovery Charge VGS = 0 V, IS = −47 A, dIF / dt = 100 A/ms (Note 4) − 0.55 − mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse width ≤ 300 ms, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.onsemi.com 3 FQPF47P06, FQPF47P06YDTU TYPICAL CHARACTERISTICS 102 102 VGS − 15.0 V − 10.0 V − 8.0 V − 7.0 V − 6.0 V − 5.5 V 1 − 5.0 V 10 Bottom: − 4.5 V −ID, Drain Current (A) −ID, Drain Current (A) Top: * Notes: 1. 250 ms Pulse Test 2. TC = 25°C 100 10−1 100 101 175°C 25°C 100 −55°C * Notes: 1. VDS = −30 V 2. 250 ms Pulse Test 10−1 2 101 4 −VDS, Drain−Source Voltage (V) 10 102 −IDR, Reverse Drain Current (A) RDS(on), Drain−Source On−Resistance (W) 0.10 0.08 0.06 VGS = −10 V 0.04 VGS = −20 V 0.02 * Note: TJ = 25°C 0 100 200 300 101 100 175°C 10−1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 400 −VSD, Source−Drain Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 8000 12 6000 Ciss 5000 Coss 4000 3000 −VGS, Gate−Source Voltage (V) Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 7000 * Notes: 1. VGS = 0 V 2. f = 1 MHz Crss 2000 1000 0 10−1 100 * Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 25°C −ID, Drain Current (A) Capacitance (pF) 8 Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 0.00 6 −VGS, Gate−Source Voltage (V) 10 8 VDS = −48 V 6 4 2 0 101 VDS = −30 V * Note: ID = −47 A 0 10 20 30 40 50 60 70 80 QG, Total Gate Charge (nC) VDS, Drain−Source Voltage (V) Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 90 FQPF47P06, FQPF47P06YDTU TYPICAL CHARACTERISTICS (Continued) 2.5 RDS(ON), (Normalized) Drain−Source On−Resistance (W) −BVDSS, (Normalized) Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −100 * Notes: 1. VGS = 0 V 2. ID = −250 mA −50 0 50 100 150 2.0 1.5 1.0 * Notes: 1. VGS = −10 V 2. ID = −23.5 A 0.5 0.0 −100 200 −50 TJ, Junction Temperature (°C) 0 100 −ID, Drain Current (A) 20 15 10 5 0 25 102 50 75 100 125 Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Maximum Safe Operating Area D = 0.5 0.2 0.1 10−1 * Notes: 1. ZqJC (t) = 2.42°C/W Max. 2. Duty Factor, D = t1 / t2 3. TJM − TC = PDM x ZqJC (t) 0.05 0.02 PDM 0.01 10−2 10−5 t1 single pulse 10−4 150 TC, Case Temperature (°C) −VDS, Drain−Source Voltage (V) ZqJC (t), Thermal Response −ID, Drain Current (A) 100 ms 101 100 200 25 100 ms * Notes : 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 100 150 30 1 ms 10 ms DC 100 Figure 8. On−Resistance Variation vs. Temperature Operation in This Area is Limited by RDS(on) 101 50 TJ, Junction Temperature (°C) Figure 7. Breakdown Voltage Variation vs. Temperature 102 0 10−3 10−2 10−1 t1, Square Wave Pulse Duration (s) Figure 11. Transient Thermal Response Curve www.onsemi.com 5 t2 100 101 175 FQPF47P06, FQPF47P06YDTU 200 nF VGS Same Type as DUT 50 k W 12 V Qg −10 V 300 nF Qgs VDS VGS Qgd DUT −3 mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on) VDD VGS VGS t off td(off) tr tf 10% DUT −10 V VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms E AS + L VDS BV DSS 1 2 LI 2 AS BV DSS * V DD tp Time ID RG VDD DUT −10 V VDD V DS (t) ID (t) I AS tp BVDSS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 FQPF47P06, FQPF47P06YDTU + VDS DUT _ ISD L Driver RG Compliment of DUT (N−Channel) VGS VGS (Driver) ISD VDD • dv/dt controlled by RG • ISD controlled by pulse period D+ Gate Pulse Width Gate Pulse Period 10 V Body Diode Reverse Current I RM (DUT) di/dt IFM , Body Diode Forward Current VDS VSD (DUT) Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms QFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B DATE 19 JAN 2021 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON67439E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 3−LEAD / TO−220F−3SG PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−3LD LF CASE 340BJ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13842G TO−220−3LD LF DATE 31 AUG 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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