KSP2222ATA

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. KSP2222A NPN General-Purpose Amplifier Features • Collector-Emitter Voltage: VCEO = 40 V • Available as PN2222A TO-92 1 2 3 1. Emitter 2. Base 3. Collector Ordering Information Part Number Marking Package Packing Method KSP2222ABU KSP2222 TO-92 3L Bulk KSP2222ATA KSP2222 TO-92 3L Ammo KSP2222ATF KSP2222 TO-92 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 600 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2001 Fairchild Semiconductor Corporation KSP2222A Rev. 1.1.0 www.fairchildsemi.com KSP2222A — NPN General-Purpose Amplifier November 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD Parameter Power Dissipation by RθJA Derate Above 25°C Value Unit 625 mW 5 mW/°C RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions BVCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 hFE DC Current Gain Collector-Emitter Saturation Voltage(2) VBE(sat) Base-Emitter Saturation Voltage(2) Max. Unit 75 V IC = 10 mA, IB = 0 40 V IE = 10 μA, IC = 0 6.0 V VCE = 10 V, IC = 0.1 mA 35 VCE = 10 V, IC = 1 mA 50 VCE = 10 V, IC = 10 mA 75 VCE = 10 V, IC = 150 mA(2) 100 VCE = 10 V, IC = 500 mA VCE(sat) Min. (2) 0.01 μA 10 nA 300 40 IC = 150 mA, IB = 15 mA 0.3 IC = 500 mA, IB = 50 mA 1.0 IC = 150 mA, IB = 15 mA 0.6 IC = 500 mA, IB = 50 mA 1.2 2.0 V V Current Gain Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz Cob Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 8 pF tON Turn-On Time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V 35 ns tOFF Turn-Off Time VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 285 ns NF Noise Figure IC = 100 μA, VCE = 10 V, RS = 1 kΩ, f = 1.0 kHz 4 dB fT 300 MHz Note: 2. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2% © 2001 Fairchild Semiconductor Corporation KSP2222A Rev. 1.1.0 www.fairchildsemi.com 2 KSP2222A — NPN General-Purpose Amplifier Thermal Characteristics(1) KSP2222A — NPN General-Purpose Amplifier Physical Dimensions D Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 2001 Fairchild Semiconductor Corporation KSP2222A Rev. 1.1.0 www.fairchildsemi.com 3 KSP2222A — NPN General-Purpose Amplifier Physical Dimensions (Continued) Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 2001 Fairchild Semiconductor Corporation KSP2222A Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I72 © Fairchild Semiconductor Corporation www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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