www.murata.com
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
+8V, +12V & +6V/-3V outputs
Operation up to 105oC
Short circuit protection
Reverse polarity protection
Characterised CMTI >200kV/ȝS
Continuous barrier withstand voltage 1.1kV
Characterised partial discharge performance
PRODUCT OVERVIEW
The MGN1 series of DC-DC converters is ideal
for powering ‘high side’ and ‘low side’ gate drive
circuits for GaN in bridge circuits. A choice of output
voltages allows optimum drive levels for best system
efficiency. The MGN1 series is characterised for high
isolation requirements commonly seen in bridge
circuits used in motor drives and inverters, while
the MGN1 industrial grade temperature rating and
construction gives long service life and reliability.
For full details go to
https://www.murata.com/englobal/products/power/rohs
Load Regulation
(Max)
4
4
4
4
1
1
Load Regulation
(Typ)
2.5
1.7
2.5
1.7
0.3
0.3
7
6
10
8
%
mVp-p
MGN1S0508MC
MGN1S0512MC
MGN1S1208MC
MGN1S1212MC
MGN1D050603MC
MGN1D120603MC
20
20
20
20
20
20
%
50
50
50
50
50
50
58
58
62
65
58
64
MTTF2
Isolation
Capacitance
Efficiency (Typ)
Order Code1
Surface mount package style
5V & 12V inputs
310
310
130
120
320
130
SELECTION GUIDE (Continued)
3kVAC isolation test voltage ‘Hi Pot Test’
Ultra low isolation capacitance
Load Regulation
(Max)
mA
111
111
Load Regulation
(Typ)
Output Current 2
125
83.3
125
83.3
111
111
Output 2
Input Current
at Rated Load
Output Current 1
V
-3
-3
Output 1
Efficiency (Min)
Reinforced insulation to UL62368
recognition pending
Output Voltage 2
Optimised output voltages designed to meet
leading GaN devices requirements
V
8
12
8
12
6
6
Ripple & Noise
(Max)3
Patent protected
V
5
5
12
12
5
12
MGN1S0508MC
MGN1S0512MC
MGN1S1208MC
MGN1S1212MC
MGN1D050603MC
MGN1D120603MC
Ripple & Noise
(Typ)3
FEATURES
Output Voltage 1
Order Code1
Nominal Input
Voltage
SELECTION GUIDE
MIL.
pF
61
62.5
67.5
69
62
68.5
Tel.
kHrs
2.5
2.5
2.5
2.5
2.5
2.5
2542
2263
2128
2484
1503
1696
32674
30885
34861
38343
24882
31467
INPUT CHARACTERISTICS
Parameter
Voltage range
Input short circuit
current ISC
Input reflected ripple
Conditions
Min.
Typ.
Max.
Units
Continuous operation, 5V input types
Continuous operation, 12V input types
MGN1S0508MC, MGN1D050603MC
MGN1S0512MC
MGN1S1208MC
MGN1S1212MC
4.5
10.8
5
12
120
130
70
60
5.5
13.2
V
MGN1D120603MC
65
MGN1S0508MC, MGN1S0512MC,
MGN1S1208MC, MGN1D120603MC
35
MGN1S1212MC
MGN1D050603MC
30
40
mA
mA
p-p
GENERAL CHARACTERISTICS
Parameter
Conditions
Switching frequency
5V input type
12V input type
Min.
Typ.
150
160
Max.
Units
kHz
1. Components are supplied in tape and reel packaging, please refer to package specification section. Orderable part numbers are
MGN1SXXXXMC-R7/MGN1DXXXXXXMC-R7 (155 pieces per reel), or MGN1SXXXXMC-R13/MGN1DXXXXXXMC-R13 (620 pieces per
reel).
2. Calculated using MIL-HDBK-217 FN2 and Telcordia SR-332 calculation model with nominal input voltage at full load.
3. See ripple & noise test method.
All specifications typical at TA=25°C, nominal input voltage and rated output current unless otherwise specified.
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KDC_MGN1_A03 Page 1 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
OUTPUT CHARACTERISTICS
Parameter
Conditions
TA=-40ºC to 105ºC
Rated Power
Minimum load
Min.
Typ.
Max.
Units
1
W
mA
1
Maximum output voltage
1
1mA external load
-3V output
6V output
8V output
12V output
MGN1S0508MC
MGN1S0512MC
MGN1S1208MC
MGN1S1212MC
Voltage Set Point Accuracy2
Typ.
Max.
Units
1100
250
650
VAC
VAC
GΩ
VDC
Vrms
VDC
Max.
Units
-6
-2
3
1
-3
-6
-2
16
OP1
OP2
OP1
MGN1D120603MC
OP2
MGN1S0508MC, MGN1S0512MC & MGN1S1212MC
MGN1S1208MC
OP1
MGN1D050603MC
OP2
OP1
MGN1D120603MC
OP2
MGN1D050603MC
Line regulation
1.1
1.2
0.1
3.2
0.1
3.2
-5
6.25
10
15
-1
2
7
5
4
5
5
26
1.2
1.25
0.2
3.5
0.2
3.5
V
%
%/%
ISOLATION CHARACTERISTICS
Parameter
Isolation test voltage
Resistance
Continuous barrier withstand voltage
3
Safety standard
UL62368-1
Conditions
Min.
Production tested for 1 second
Qualification tested for 1 minute
Viso= 1000VDC
Non-safety barrier application
Reinforced
Basic
3000
3000
10
Creepage and clearance 6.5mm
TEMPERATURE CHARACTERISTICS
Parameter
Conditions
Min.
Specification
Storage
see derating curves
-40
-40
MGN1S0508MC
MGN1S0512MC
Product Temperature above
ambient
MGN1S1208MC
MGN1S1212MC
MGN1D050603MC
MGN1D120603MC
Cooling
1 Layer PCB
4 Layer PCB
1 Layer PCB
4 Layer PCB
1 Layer PCB
4 Layer PCB
1 Layer PCB
4 Layer PCB
1 Layer PCB
4 Layer PCB
1 Layer PCB
4 Layer PCB
Typ.
105
125
31
15
34
17
27
15
23
10
29
15
22
12
°C
Free air convection
ABSOLUTE MAXIMUM RATINGS
Short-circuit protection
Input voltage VIN, MGN1X05
Input voltage VIN, MGN1X12
Reverse polarity
MGN1X05
MGN1X12
See graphs
7V
15V
5.5V
13.2V
1. Most gate drive circuits will have at least 1mA of standby current, if this is not the case an external bleed resistor may be necessary.
2. TA=25°C, nominal input voltage and 75% load.
3. UL62368-1 recognition is currently pending.
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KDC_MGN1_A03 Page 2 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
TECHNICAL NOTES
ISOLATION VOLTAGE
‘Hi Pot Test’, ‘Flash Tested’, ‘Withstand Voltage’, ‘Proof Voltage’, ‘Dielectric Withstand Voltage’ & ‘Isolation Test Voltage’ are all terms that relate to the same thing, a test
voltage, applied for a specified time, across a component designed to provide electrical isolation, to verify the integrity of that isolation.
Murata Power Solutions MGN1 series of DC-DC converters are all 100% production tested at 3kVAC for 1 second and have been qualification tested at 3kVAC for 1
minute.
A question commonly asked is, “What is the continuous voltage that can be applied across the part in normal operation?”
When the insulation in the MGN1 series is not used as a safety barrier, i.e. provides functional isolation only, continuous or switched voltages across the barrier up to
1.1kV are sustainable. Long term reliability testing at these voltages continues. Peak Inception voltages measured were in excess of 1.1kV when testing for partial discharge in accordance with IEC 60270. Please contact Murata for further information.
The MGN1 series is pending recognition by Underwriters Laboratory to 250VAC Reinforced Insulation, please see safety approval section below.
REPEATED HIGH-VOLTAGE ISOLATION TESTING
It is well known that repeated high-voltage isolation testing of a barrier component can actually degrade isolation capability, to a lesser or greater degree depending on
materials, construction and environment. We therefore strongly advise against repeated high voltage isolation testing, but if it is absolutely required, that the voltage be
reduced by 20% from specified test voltage.
SAFETY APPROVAL
UL62368-1
The MGN1 series is pending recognition by Underwriters Laboratory (UL) to UL62368-1 for reinforced insulation to a working voltage of 250Vrms and for basic insulation
to a working voltage of 650Vrms.
Creepage and clearance 6.5mm.
Working altitude OVC II 5000m
FUSING
The MGN1 Series of converters are not internally fused so to meet the requirements of UL an anti-surge input line fuse should always be used with ratings as defined
below.
Input Voltage, 5V 0.5A
Input Voltage, 12V 0.25A
All fuses should be Anti-Surge and UL rated.
RoHS COMPLIANCE AND MSL INFORMATION
This series is compatible with Pb-Free soldering systems and is also backward compatible with Sn/Pb soldering systems.
The series can be soldered in accordance with J-STD-020. Please refer to application notes for further information. This
series have a classification temperature of 260°C and moisture sensitivity level 2. The termination finish on this product is
Gold with plating thickness 0.12 microns.
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KDC_MGN1_A03 Page 3 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
ENVIRONMENTAL VALIDATION TESTING
The following tests have been conducted on this product series, please contact Murata if further information about the tests is required.
Test
Standard
Condition
Temperature cycling
JEDEC JESD22-A104
500 cycles in a dual zone chamber from -40 (+5/-10)°C to 105 (+10/-5)°C. 15mins dwell at each (inclusive of ramps). 2
cycles per hour
HAST (unbiased)
Storage life (high
temperature)
Storage life (low
temperature)
JEDEC JESD22-A118
130±2°C, 85±5% R.H. for 96 (+2/-0) hours
JEDEC JESD22-A119
-40°C -10/+0°C for ≥1000 hours
MSL
IPC/JEDEC J-STD-020
Bake samples at 125 +5/-0°C for 24hours minimum before conditioning in the temperature/humidity chamber for 168
hours at 85°C/60%RH and Pb Free JEDEC Max profile conditioning with electrical testing, co-planarity, visual inspection
before and after.
Vibration
JEDEC JESD22-B103
20Hz to 2 kHz to 20Hz (logarithmic variation) in >4 minutes, 4 times in each orientation (i.e. 12times), 50G (±10%) peak
acceleration. Sinusoidal Vibration.
Shock
JEDEC JESD22 B110
Solvent cleaning
Resistance to cleaning agents.
JEDEC JESD22-A103, Condition A 125°C +10/-0°C for ≥1000 hours
5 pulses half sine pulses of 0.5msec (±15%)duration, 1500g (±10%) peak acceleration. This equates to free state test
level B in JESD22-B110 which states an Equivalent drop height of 112cm and a Velocity change 468cm/s (±10%).
Solvent – Novec 71IPA & Topklean EL-20A. Pulsed ultrasonic immersion 45°C - 65°C
PART NUMBER STRUCTURE - SINGLE
MGN 1 S XX XX M C
Series name
RoHS compliant
Power rating
Package type
Output type
S - Single
D - Dual
S - SIP
D - DIP
M - Surface Mount
Z - ZIP
Input voltage
Output voltage
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KDC_MGN1_A03 Page 4 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
PART NUMBER STRUCTURE - DUAL
MGN 1 D XX XX XX M C
Series name
RoHS compliant
Power rating
Package type
S - SIP
D - DIP
M - Surface Mount
Z - ZIP
Output type
S - Single
D - Dual
Negative output
voltage
Positive output
voltage
Input voltage
GaN MANUFACTURES GATE DRIVE VOLTAGE
GaN manufactures
GaN Systems
Infineon
Texas Instruments
GanPower international
Nexperia
Navitas
Transphorm
Gate voltage
+6V/-3V
8V
12V
+6V/-3V
12V
12V
12V
MGN1 part number
MGN1D050603MC & MGN1D120603MC
MGN1D0508MC & MGN1D1208MC
MGN1D0512MC & MGN1D1212MC
MGN1D050603MC & MGN1D120603MC
MGN1D0512MC & MGN1D1212MC
MGN1D0512MC & MGN1D1212MC
MGN1D0512MC & MGN1D1212MC
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KDC_MGN1_A03 Page 5 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
CHARACTERISATION TEST METHODS
Ripple & Noise Characterisation Method
Ripple and noise measurements are performed with the following test configuration.
C1
1μF X7R multilayer ceramic capacitor, voltage rating to be a minimum of 3 times the output voltage of the DC-DC converter
10μF tantalum capacitor, voltage rating to be a minimum of 1.5 times the output voltage of the DC-DC converter with an ESR of less
than 100mΩ at 100 kHz
C3
100nF multilayer ceramic capacitor, general purpose
R1
450Ω resistor, carbon film, ±1% tolerance
R2
50Ω BNC termination
T1
3T of the coax cable through a ferrite toroid
RLOAD
Resistive load to the maximum power rating of the DC-DC converter. Connections should be made via twisted wires
Measured values are multiplied by 10 to obtain the specified values.
C2
Differential Mode Noise Test Schematic
DC/DC Converter
OSCILLOSCOPE
C1 C2 C3
+
Input
SUPPLY
-
R1
R2
T1
+
Y INPUT
Output
-
R LOAD
APPLICATION NOTES
Gate Drive Applications Advisory Note
For general guidance for product usage in gate drive applications please refer to “gate drive application notes”.
Short Circuit Performance
Below an ambient temperature of 40°C, the MGN1 short circuit protection is continuous. Above 40°C, short circuit duration time is reduced as shown in the following
graph:
Short Circuit Duration (s)
1000
MGN1S0508MC
100
MGN1S0512MC
MGN1D050603MC
MGN1S1208MC
MGN1S1212MC
MGN1D120603MC
10
1
40
50
60
70
80
Temperature (°C)
90
100
Typical Application Circuit Diagrams
The following circuit diagrams are intended to provide guidance on how to connect the MGN1 series to GaN drivers for GaN devices. Please refer to GaN manufactures datasheets for full application circuits.
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KDC_MGN1_A03 Page 6 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
APPLICATION NOTES (Continued)
Typical Application Circuit Diagrams - GaN Systems
VCC
VDD
+6V
23/24
C1
1/2
+Vout
+Vin
MGN1D050603MC or
MGN1D120603MC 0V
-Vin
15/16
C2
0V
11/12/13/14
GD_GND
C4
9/10
-Vout
-3V
0V
U1
1
PWM_IN
2
VCC
C6
3
4
VI
VDD
VDDI
VO+
GNDI
VOGNDA
EN
DRAIN
VEE
VDD
C5
8
1
R3
GD_GND
7
Q1
GS66508T/16T
2
4
6
R4
C7
5
3
R8
GD_GND
SI8271AB
0V
VEE
EN
SOURCE
GD_GND
ISOLATION
Typical Application Circuit Diagrams - Infineon
VCC
19/20
C1
1/2
11/12
+Vin
-Vin
+Vout
MGN1D0508MC or
MGN1D1208MC
0V
VDD1
C2
9/10
VSS1
0V
+5V
3
7
R12
2
PWM_IN
6
C12
R13
C18
4
5
1
VDD1
U1
NC
VDDI
PWM
TNEG
VDDS
OUTS
GNDS
VDDG
SLDO
OUTG
DISABLE
GNDG
GNDI
1EDF5673K-B
Q1
IGOT60R070D1
R15
13
C13
12
11
C17
R14
D15
10
R18
C14
G1
D
G
R17
K5
S
9
8
R19
VSS1
ISOLATION
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KDC_MGN1_A03 Page 7 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
APPLICATION NOTES (Continued)
Typical Application Circuit Diagrams - Texas instruments
VDC
Q1
LMG342X
D
RDRV
ISOLATOR
IN
PWM_H
TEMP
/OC
/FAULT
ISO7741
VCC
LDO 5V
19/20
C1
1/2
+Vin
-Vin
+Vout
MGN1D0512MC or
MGN1D1212MC
0V
11/12
VDD
C2
GND
9/10
S
SW
0V
ISOLATION
Typical Application Circuit Diagrams - Ganpower International
VCC
+6V
24/23
+Vout
+Vin
C2
15/16
MGN1D050603MC or
MGN1D120603MC 0V
1/2
11/12/13/14
-Vin
C8
0V
VO
C9
9/10
-Vout
ISO_VDD_UP
-3V
0V
ISO_VEE_UP
VPN
U1
C11
C1
R13
0V
3
4
L1
R7
5
R18
ACPL-W346-000E
4
D3
3
ISO_VEE_UP
D9
R12
D8
5
D
G
KS
1
D11
R9
Q1
GPI65030DFN
ISO_VDD_UP
C20
2
C16
S_3
6
S_2
1
S_1
R1
PWM_UP
9
C14
C10
ISOLATION
VO
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KDC_MGN1_A03 Page 8 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
APPLICATION NOTES (Continued)
Typical Application Circuit Diagrams - Nexperia
VCC
VCC
VDDA
11/12
19/20
+Vin
C1
1/2
-Vin
+Vout
MGN1D0512MC or
MGN1D1212MC
0V
19/20
C3
C2
9/10
1/2
VDDB
11/12
+Vin
-Vin
+Vout
MGN1D0512MC or
MGN1D1212MC
0V
C4
9/10
GNDB
GNDA
AGND
AGND
ISOLATION
+5V
C10
+
C11
+
HV
GNDA
AGND
VDDA
U2
Q1
SI8230
1
PWM_U_HI
2
PWM_U_LO
3
4
6
AGND
VDDA
VIB
VOA
VDDI
GNDA
C12
+
16
R13
GaN063650WSA D
C13
R11
15
R14
G
C24
+
14
VDDB
S
GNDB
GND1
5
R7
VIA
7
8
Q2
DISABLE
DT
VDDB
NC
VOB
VDDI1
GNDB
C14
+
11
GaN063650WSA D
C15
R12
10
R15
G
R16
9
S
C25
+
AGND
ISOLATION
PGND
Typical Application Circuit Diagrams - Navitas
VCC
19/20
C1
1/2
11/12
+Vout
+Vin
-Vin
MGN1D0512MC or
MGN1D1212MC
0V
VDD2
C2
9/10
GND2
TP23
VIN
DRAIN1
VDD1
VDD2
OUT
C33
5
IN
8
2
R18
4
5
GND2/NC
GND2
B1
GND1
A1
1
R17
VDD2
VDD1
R52
3
VDD1/NC
1
PWM
5V REG
C34
U7
I80721M
7
3
C21
4
D7
C47
VCC
6
7
8
DF DF DF DF
Q9
NV6115
PWM
VDD
DZ
SF
9
TP25
SOURCE1
VSW
GND1
ISOLATION
GND2
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KDC_MGN1_A03 Page 9 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
APPLICATION NOTES (Continued)
Typical Application Circuit Diagrams - Transphorm
VCC
VCC
VDDA
11/12
19/20
+Vout
+Vin
C1
1/2
-Vin
MGN1D0512MC or
MGN1D1212MC
0V
19/20
C2
C3
9/10
1/2
11/12
+Vin
-Vin
+Vout
MGN1D0512MC or
MGN1D1212MC
0V
VDDB
C4
9/10
GNDB
GNDA
AGND
AGND
ISOLATION
VDD
+5V
GAN1
U2
GNDA
SI8230
1
GAN1_GATE
2
GAN2_GATE
R12
R11
3
R3
4
5
R0
AGND
ENABLE
6
R4 AGND
7
8
R1
AGND
VIA
VDDA
VIB
VOA
VDDI
GNDA
TP65H070LDG
VDDA
C17
R8
R10
16
FB1
RG1
15
14
C10
DGND
C15
R6
C11
GND1
VDDB
C13
DISABLE
DT
VDDB
NC
VOB
VDDI1
GNDB
C18
R13
C14
VSW
11
GNDB
10
GAN2
LSG
9
R9
RG2
C6 C7
FB2
R7
ISOLATION
C8
C16
C9
AGND
DGND
DGND
Dual Output Configuration
The MGN1D050603MC and MGN1D120603MC are dual output DC-DC converters specifically designed for gate drive applications and are not suitable for general purpose
dual output use. However, each can be used as a general purpose single 9V output converter, by loading from +Vout to -Vout.
The MGN1D050603MC and MGN1D120603MC provide a dual output by using a reference IC and resistor divider network circuit with patented short circuit protection. This
is important to maintain an accurate 6V to the gate of the GaN device over the temperature range and operating conditions, something a Zener diode cannot guarantee.
+Vout (+6V)
R1
U1
C1
TL431
1µF
R2
Protection
0V
R2
2.7kΩ
C2
2.2µF
-Vout (-3V)
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KDC_MGN1_A03 Page 10 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
APPLICATION NOTES (Continued)
Capacitive loading and start up
The typical start up for single output variants, using a 56uF capacitor is 10mS. The start up behaviour of the +Vout and -Vout rails of a dual output DC-DC using a divider
network depends significantly on the additional capacitance added to the outputs. This is because the two capacitors behave as a capacitive divider. If the two capacitors
are equal and 9V is applied across them the outputs will initially start as +/-4.5V.
There will be a settling time while the divider circuit adjusts to the correct voltages, to calulcate the approixmate value please refer to the following formula.
Settling time ≈ 3000 x C (s)
So, for instance if a maximum capacitance of 100uF is applied to each output the settling time will be about 300ms.
9RXW
15/16
C3
100μF
MGN1D050603MC or
MGN1D120603MC 0V
-Vin
C4
100μF
9/10
-Vout (-3V)
11/12/13/14
X
1/2
+Vin
+Vout (+6V)
9RXW
9
24/23
P
P
5()
7LPHP6HFV
$
P6HFVGLY
To avoid spurious gate pulses it is recommended that the PWM gate signal is not applied until after the settling time has ended.
An alternative method to reduce the settling time is to adjust the values of the additional capacitance so that the CV products are equal. i.e. C3 x 6V = C4 x 3V.
So, for instance if a maximum capacitance of 75uF is applied to the +6V output and 150uF is applied to the -3V output the settling time is greatly reduced.
9RXW
9RXW
1/2
+Vin
+Vout (+6V)
15/16
C3
75μF
MGN1D050603MC or
MGN1D120603MC 0V
-Vin
-Vout (-3V)
11/12/13/14
9
24/23
C4
150μF
9/10
7LPHP6HFV
P6HFVGLY
NB: The total maximum series capacitance across 9V = 50uF.
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KDC_MGN1_A03 Page 11 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
EFFICIENCY VS LOAD
MGN1S0512MC
70
70
60
60
50
50
40
40
Efficiency (%)
Efficiency (%)
MGN1S0508MC
30
30
20
20
10
10
0
0
0
10
20
30
40
50
60
70
80
90
100
110
0
10
20
30
40
50
Load (%)
MGN1S1208MC
70
80
90
100
110
70
80
90
100
110
70
80
90
100
MGN1S1212MC
80
80
70
70
60
60
50
50
Efficiency (%)
Efficiency (%)
60
Load (%)
40
40
30
30
20
20
10
10
0
0
0
10
20
30
40
50
60
70
80
90
100
110
0
10
20
30
40
Load (%)
50
60
Load (%)
MGN1D050603MC
MGN1D120603MC
70
80
70
60
60
50
Efficiency (%)
Efficiency (%)
50
40
30
40
30
20
20
10
10
0
0
0
10
20
30
40
50
60
Load (%)
70
80
90
100
110
0
10
20
30
40
50
60
110
Load (%)
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KDC_MGN1_A03 Page 12 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
OUTPUT VOLTAGE DEVIATION FROM NOMINAL VS LOAD
MGN1S0512MC
60
60
50
50
40
40
Deviation from Nominal (%)
Deviation from Nominal (%)
MGN1S0508MC
30
20
30
20
10
10
0
0
-10
-10
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
Load (%)
60
70
80
90
100
70
80
90
100
Load (%)
MGN1S1208MC
MGN1S1212MC
80
70
70
60
60
Deviation from Nominal (%)
Deviation from Nominal (%)
50
50
40
30
40
30
20
20
10
10
0
0
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
Load (%)
60
Load (%)
MGN1D050603MC
MGN1D120603MC
20
40
35
15
5
+Vout
-Vout
0
Deviation from Nominal (%)
Deviation from Nominal (%)
30
10
25
20
+Vout
-Vout
15
10
-5
5
-10
0
0
10
20
30
40
50
Load (%)
60
70
80
90
100
0
10
20
30
40
50
60
70
80
90
100
Load (%)
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KDC_MGN1_A03 Page 13 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
TEMPERATURE DERATING
The MGN1 series has been designed to minimise the thermal impedance when mounted onto a customers application PCB by using multiple surface mount pads for each
connection. All thermal measurements were carried out in still air using a test pcb designed in accordance with standard JESD51-9 (Test Boards for Area Array Surface
Mount Package Thermal Measurements). A single layer and a 4 layer have been used and this demonstrates that a higher operating temperature can be achieved when the
customers application pcb is designed to incorporate multiple layers and large copper planes. Please contact Murata for further information.
MGN1S0508MC
MGN1S0512MC
100%
100%
90%
90%
80%
80%
70%
70%
60%
1 Layer
50%
4 Layer
40%
Load (%)
Load (%)
60%
4 Layer
40%
30%
30%
20%
20%
10%
10%
0%
0%
0
10
20
30
40
50
60
70
80
90
100
110
0
10
20
30
40
60
70
80
Temperature (°C)
MGN1S1208MC
MGN1S1212MC
100%
100%
90%
90%
80%
80%
70%
70%
90
100
110
60%
4 Layer
40%
Load (%)
1 Layer
50%
1 Layer
50%
4 Layer
40%
30%
30%
20%
20%
10%
10%
0%
0%
0
10
20
30
40
50
60
70
80
90
100
110
0
120
10
20
30
40
50
60
70
80
90
100
110
120
Temperature (°C)
Temperature (°C)
MGN1D050603MC
MGN1D120603MC
100%
100%
90%
90%
80%
80%
70%
70%
60%
1 Layer
50%
4 Layer
40%
Load (%)
60%
Load (%)
50
Temperature (°C)
60%
Load (%)
1 Layer
50%
1 Layer
50%
4 Layer
40%
30%
30%
20%
20%
10%
10%
0%
0%
0
10
20
30
40
50
60
70
Temperature (°C)
80
90
100
110
120
0
10
20
30
40
50
60
70
80
90
100
110
120
Temperature (°C)
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KDC_MGN1_A03 Page 14 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
EMC FILTERING AND SPECTRA
FILTERING
The following filter circuit and filter table shows the input filters typically required to meet EN55022 Quasi-PeakCurve A or B.
L
MGN1S0508MC
MGN1S0512MC
MGN1S1208MC
MGN1S1212MC
MGN1S050603MC
MGN1S120603MC
SMD
29223C
29223C
34103C
34103C
29223C
34103C
Load
Rd
DC
Inductor
L, μH
22
22
10
10
22
10
DC
Cd
C
Power
Source
C, μF
10
10
10
10
10
10
Capacitor
SMD
GRM31CR61E106KA12L
GRM31CR61E106KA12L
GRM31CR61E106KA12L
GRM31CR61E106KA12L
GRM31CR61E106KA12L
GRM31CR61E106KA12L
Resistor
Rd, Ω
3
3
3
3
3
3
Capacitor
Cd, μF
10
10
10
10
10
10
MGN1S0508MC (Average)
80
70
70
60
60
50
50
dBuV
dBuV
MGN1S0508MC (Quasi-Peak)
80
40
40
30
30
20
20
10
10
0
1.00E+05
1.00E+06
1.00E+07
0
1.00E+05
1.00E+08
Frequency (Hz)
70
70
60
60
50
50
40
40
30
30
20
20
10
10
1.00E+07
Frequency (Hz)
1.00E+08
MGN1S0512MC (Average)
80
dBuV
dBuV
MGN1S0512MC (Quasi-Peak)
1.00E+06
1.00E+07
Frequency (Hz)
80
0
1.00E+05
1.00E+06
1.00E+08
0
1.00E+05
1.00E+06
1.00E+07
1.00E+08
Frequency (Hz)
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KDC_MGN1_A03 Page 15 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
EMC FILTERING AND SPECTRA
MGN1S1208MC (Average)
80
70
70
60
60
50
50
dBuV
dBuV
MGN1S1208MC (Quasi-Peak)
80
40
30
40
30
20
20
10
10
0
1.00E+05
1.00E+06
1.00E+07
Frequency (Hz)
0
1.00E+05
1.00E+08
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
1.00E+05
1.00E+08
70
70
60
60
50
50
40
30
20
20
10
10
0
1.00E+05
1.00E+08
MGN1D120603MC (Quasi-Peak)
1.00E+07
1.00E+08
MGN1D120603MC (Average)
80
70
70
60
60
50
50
dBuV
dBuV
1.00E+06
Frequency (Hz)
80
40
40
30
30
20
20
10
10
1.00E+06
1.00E+07
Frequency (Hz)
1.00E+08
40
30
0
1.00E+05
1.00E+07
MGN1D050603MC (Average)
80
dBuV
dBuV
MGN1D050603MC (Quasi-Peak)
1.00E+06
1.00E+07
Frequency (Hz)
1.00E+06
Frequency (Hz)
80
0
1.00E+05
1.00E+08
MGN1S1212MC (Average)
80
dBuV
dBuV
MGN1S1212MC (Quasi-Peak)
1.00E+06
1.00E+07
Frequency (Hz)
1.00E+07
Frequency (Hz)
80
0
1.00E+05
1.00E+06
1.00E+08
0
1.00E+05
1.00E+06
1.00E+07
1.00E+08
Frequency (Hz)
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KDC_MGN1_A03 Page 16 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
PACKAGE SPECIFICATIONS
MECHANICAL DIMENSIONS (SINGLE)
PIN CONNECTIONS
Pin
Function
1
-Vin
2
-Vin
9
0V
10
0V
11
+Vout
12
+Vout
19
+Vin
20
+Vin
RECOMMENDED FOOTPRINT DETAILS
All dimensions in mm.
Tolerances (unless otherwise stated) ±0.2.
Components shown for reference only
Weight: 1.3g
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KDC_MGN1_A03 Page 17 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
PACKAGE SPECIFICATIONS
MECHANICAL DIMENSIONS (DUAL)
PIN CONNECTIONS
Pin
Function
Pin
Function
1
-Vin
13
0V
2
-Vin
14
0V
9
-Vout
15
+Vout
10
-Vout
16
+Vout
11
0V
23
+Vin
12
0V
24
+Vin
RECOMMENDED FOOTPRINT DETAILS
All dimensions in mm.
Tolerances (unless otherwise stated) ±0.2.
Components shown for reference only
Weight: 1.5g
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KDC_MGN1_A03 Page 18 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
TAPE & REEL SPECIFICATIONS
Reel Outline Dimensions
All dimension in mm
# Measured at hub
## Six equi-spaced slots on 180mm/7” reel
Reel Packaging Details
Reel Quantity: 7” - 155 or 13” - 620
Tape Outline Dimensions (Single)
All dimensions in mm
Components shall be orientated within the carrier tape as indicated
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KDC_MGN1_A03 Page 19 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
TAPE & REEL SPECIFICATIONS
Tape Outline Dimensions (Single)
All dimensions in mm
Components shall be orientated within the carrier tape as indicated
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KDC_MGN1_A03 Page 20 of 21
MGN1 Series
3kVAC Isolated 1W SM GaN Gate Drive DC-DC Converters
DISCLAIMER
Unless otherwise stated in the datasheet, all products are designed for standard commercial and industrial applications and NOT for safety-critical and/or life-critical
applications.
Particularly for safety-critical and/or life-critical applications, i.e. applications that may directly endanger or cause the loss of life, inflict bodily harm and/or loss or severe
damage to equipment/property, and severely harm the environment, a prior explicit written approval from Murata is strictly required. Any use of Murata standard products for any safety-critical, life-critical or any related applications without any prior explicit written approval from Murata shall be deemed unauthorised use.
These applications include but are not limited to:
•
Aircraft equipment
•
Aerospace equipment
•
Undersea equipment
•
Power plant control equipment
•
Medical equipment
•
Transportation equipment ( automobiles, trains, ships, etc.)
•
Traffic signal equipment
•
Disaster prevention / crime prevention equipment
•
Data Processing equipment
Murata makes no express or implied warranty, representation, or guarantee of suitability, fitness for any particular use/purpose and/or compatibility with any application or device of the buyer, nor does Murata assume any liability whatsoever arising out of unauthorised use of any Murata product for the application of the buyer. The
suitability, fitness for any particular use/purpose and/or compatibility of Murata product with any application or device of the buyer remain to be the responsibility and
liability of the buyer.
Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards that anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm, and take appropriate remedial actions. Buyer will fully indemnify and hold
Murata, its affiliated companies, and its representatives harmless against any damages arising out of unauthorised use of any Murata products in any safety-critical and/
or life-critical applications.
Remark: Murata in this section refers to Murata Manufacturing Company and its affiliated companies worldwide including, but not limited to, Murata Power Solutions.
This product is subject to the following operating requirements
and the Life and Safety Critical Application Sales Policy:
Refer to: https://www.murata.com/en-eu/products/power/requirements
Murata Power Solution(Milton Keynes) Ltd. makes no representation that the use of its products in the circuits described herein, or the use
of other technical information contained herein, will not infringe upon existing or future patent rights. The descriptions contained herein do
not imply the granting of licenses to make, use, or sell equipment constructed in accordance therewith. Specifications are subject to change
without notice.
© 2023 Murata Power Solution(Milton Keynes) Ltd.
www.murata.com
KDC_MGN1_A03 Page 21 of 21