MJE15034G

MJE15034 (NPN), MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices www.onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS Features • • • • High Current Gain − Bandwidth Product TO−220 Compact Package Epoxy meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* COMPLEMENTARY COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 350 Vdc Collector−Base Voltage VCB 350 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 4.0 Adc Collector−Emitter Voltage Collector Current − Continuous Collector Current − Peak ICM 8.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 50 0.40 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C –65 to +150 _C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic 1 BASE 3 EMITTER 3 EMITTER MARKING DIAGRAM 4 TJ, Tstg Operating and Storage Junction Temperature Range 1 BASE COLLECTOR 2, 4 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W TO−220 CASE 221A STYLE 1 1 2 MJE1503xG AYWW 3 MJE1503x = Device Code x = 4 or 5 A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJE15034G TO−220 (Pb−Free) 50 Units / Rail MJE15035G TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 6 1 Publication Order Number: MJE15034/D MJE15034 (NPN), MJE15035 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 350 − Vdc OFF CHARACTERISTICS (IC = 10 mAdc, IB = 0) Collector−Emitter Sustaining Voltage (Note 1) Collector Cutoff Current (VCB = 350 Vdc, IE = 0) ICBO − 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10 mAdc 100 100 50 10 − − − − − ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 0.1 Adc, VCE = 5.0 Vdc) (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage Base−Emitter On Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − 1.0 Vdc 30 − DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = ⎪hfe⎪• ftest. 10 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC TA 1.0 20 0 0 0 20 40 60 80 100 120 140 160 100mS DC 1.0 0.1 0.01 1.0 T, TEMPERATURE (°C) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. Power Derating 1.0 0.7 0.5 0.3 Figure 2. Active Region Safe Operating Area 0.1 0.02 0.01 SINGLE PULSE 0.02 0.05 P(pk) ZqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.03 0.01 0.01 1000 0.2 0.1 0.02 100 D = 0.5 0.2 0.07 0.05 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 3. Thermal Response www.onsemi.com 2 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k MJE15034 (NPN), MJE15035 (PNP) 1000 1000 TJ = 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 150°C 25°C 100 −40°C 10 1.0 0.01 0.1 1.0 25°C −40°C 100 10 1.0 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. DC Current Gain, VCE = 5.0 V NPN MJE15034 Figure 5. DC Current Gain, VCE = 5.0 V PNP MJE15035 1000 10 1000 TJ = 150°C 100 hFE, DC CURRENT GAIN 25°C −40°C 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.0 0.01 0.1 1.0 100 10 1.0 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 20 V NPN MJE15034 Figure 7. DC Current Gain, VCE = 20 V PNP MJE15035 10 IC/IB = 10 1.0 25°C TJ = 150°C 0.1 −40°C 0.01 0.01 25°C −40°C VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TJ = 150°C 0.1 1.0 10 10 IC/IB = 10 1.0 −40°C 0.1 TJ = 150°C 25°C 0.01 0.01 IC, COLLECTOR CURRENT (AMPS) 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 9. VCE(sat) PNP MJE15035 Figure 8. VCE(sat) NPN MJE15034 www.onsemi.com 3 10 10 MJE15034 (NPN), MJE15035 (PNP) 10 IC/IB = 10 1.0 BASE−EMITTER VOLTAGE (V) BASE−EMITTER VOLTAGE (V) 10 −40°C 25°C TJ = 150°C 0.1 0.01 0.1 1.0 IC/IB = 10 −40°C 1.0 25°C TJ = 150°C 0.1 0.01 10 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 11. VBE(sat) PNP MJE15035 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.0 −40°C 0.6 25°C 0.4 TJ = 150°C 0.2 0.0 0.01 0.1 1.0 10 1.4 1.2 1.0 −40°C 0.8 0.6 25°C 0.4 TJ = 150°C 0.2 0.0 0.01 IC, COLLECTOR CURRENT (AMPS) fT, CURRENT BANDWIDTH PRODUCT (MHz) fT, CURRENT BANDWIDTH PRODUCT (MHz) TJ = 25°C f test = 1 MHz 50 40 30 VCE= 10 V 20 10 0 0.001 0.01 0.1 1.0 10 Figure 13. VBE(on) PNP MJE15035 80 60 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 12. VBE(on) NPN MJE15034 70 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. VBE(sat) NPN MJE15034 0.8 1.0 1.0 10 100 80 TJ = 25°C f test = 1 MHz 60 40 VCE= 10 V 20 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 15. Typical Current Gain Bandwidth Product PNP MJE15035 Figure 14. Typical Current Gain Bandwidth Product NPN MJE15034 www.onsemi.com 4 MJE15034 (NPN), MJE15035 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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