MMBFJ175LT1G

MMBFJ175LT1G JFET Chopper P−Channel − Depletion Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 V VGS(r) −25 V Symbol Max Unit 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD 3 SOT−23 (TO−236) CASE 318 STYLE 10 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. MARKING DIAGRAM 6W M G G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 30 − V Gate Reverse Current (VDS = 0 V, VGS = 20 V) IGSS − 1.0 nA Gate −Source Cutoff Voltage (VDS = 15, ID = 10 nA) VGS(OFF) 3.0 6.0 V 6W = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Zero Gate−Voltage Drain Current (Note 2) (VGS = 0, VDS = 15 V) IDSS 7.0 60 mA ORDERING INFORMATION Drain Cutoff Current (VDS = 15 V, VGS = 10 V) ID(off) − 1.0 nA Drain Source On Resistance (ID = 500 mA) rDS(on) − 125 W Ciss − 11 Crss − 5.5 1 OFF CHARACTERISTICS Gate −Source Breakdown Voltage (VDS = 0, ID = 1.0 mA) ON CHARACTERISTICS Input Capacitance Reverse Transfer Capacitance VDS = 0, VGS = 10V f = 1.0 MHz pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 7 1 Package Shipping† MMBFJ175LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SMMBFJ175LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBFJ175LT1/D MMBFJ175LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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