MMBFU310LT1G

MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 SOT−23 (TO−236AB) CASE 318−08 STYLE 10 1 2 THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C 1 DRAIN PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1. FR− 5 = 1.0  0.75  0.062 in. MARKING DIAGRAM M6C M G G 1 M6C = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBFU310LT1G Package Shipping† SOT−23 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 6 1 Publication Order Number: MMBFU310LT1/D MMBFU310LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)GSS −25 − Vdc Gate 1 Leakage Current − (VGS = −15 Vdc, VDS = 0) IG1SS − −150 pA Gate 2 Leakage Current − (VGS = −15 Vdc, VDS = 0, TA = 125°C) IG2SS − −150 nAdc VGS(off) −2.5 −6.0 Vdc IDSS 24 60 mAdc VGS(f) − 1.0 Vdc Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage − (IG = −1.0 mAdc, VDS = 0) Gate Source Cutoff Voltage − (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current − (VDS = 10 Vdc, VGS = 0) Gate−Source Forward Voltage − (IG = 10 mAdc, VDS = 0) SMALL−SIGNAL CHARACTERISTICS Forward Transfer Admittance − (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 10 18 mmhos Output Admittance − (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| − 250 mmhos Input Capacitance − (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss − 5.0 pF Reverse Transfer Capacitance − (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss − 2.5 pF 60 I D , DRAIN CURRENT (mA) 60 VDS = 10 V TA = -55°C 50 50 40 +25°C IDSS +25°C 40 30 20 10 -5.0 30 +150°C 20 +25°C -55°C 10 +150°C -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 0 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 35 30 TA = -55°C VDS = 10 V f = 1.0 MHz +25°C 25 20 +150°C 15 +25°C -55°C 10 +150°C 5.0 0 5.0 4.0 3.0 2.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics vs Gate−Source Voltage Figure 2. Forward Transconductance vs Gate−Source Voltage www.onsemi.com 2 0 10 1.0 k 10 k 100 VGS(off) = -2.3 V = VGS(off) = -5.7 V = 1.0 k Yos 10 RDS CAPACITANCE (pF) Yfs Yfs 120 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 0 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 100 0.01 9.0 8.0 ID, DRAIN CURRENT (mA) |S12|, |S22| 3.0 0.060 1.00 2.4 0.79 0.39 0.048 0.98 1.2 VDS = 10 V ID = 10 mA TA = 25°C 0.73 0.33 200 300 500 f, FREQUENCY (MHz) 0.024 0.94 S11 0.012 0.92 0.61 0.21 0.6 S12 700 0.55 0.15 100 1000 Figure 5. Common−Gate Y Parameter Magnitude vs Frequency q21, q11 180° 50° q22 140° 10° 200 300 500 f, FREQUENCY (MHz) q11, q12 -20° 120° q21, q22 -40° 86° -40° 100° 85° -60° 80° -120° 84° -80° 60° -100° 40° -120° 20° 100 0 q11 -20° q21 0.90 700 1000 Figure 6. Common−Gate S Parameter Magnitude vs Frequency q12, q22 -20° 87° 40° 0.036 0.96 0.67 0.27 Y12 20° 0 0 1.0 |S21|, |S11| 1.8 Y22 6.0 150° 2.0 0.85 0.45 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) Y11 Y21 30° 3.0 S21 12 160° 4.0 S22 VDS = 10 V ID = 10 mA TA = 25°C 18 170° 5.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 30 0 100 6.0 Figure 4. On Resistance and Junction Capacitance vs Gate−Source Voltage Figure 3. Common−Source Output Admittance and Forward Transconductance vs Drain Current 24 7.0 q21 q22 -20° -60° -80° -40° -100° q12 q11 130° 0° 100 -140° VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) -60° q12 -160° 83° -180° 700 q21 -200° 82° 1000 Figure 7. Common−Gate Y Parameter Phase−Angle vs Frequency VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q11 700 -80° -100° 1000 Figure 8. S Parameter Phase−Angle vs Frequency www.onsemi.com 3 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE (μ mhos) Yfs , FORWARD TRANSCONDUCTANCE (μmhos) MMBFU310LT1G MMBFU310LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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