MMBT2907AWT1G

DATA SHEET www.onsemi.com General Purpose Transistor COLLECTOR 3 PNP Silicon 1 BASE MMBT2907AWT1G, NSVMMBT2907AWT1G 2 EMITTER These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. 3 SC −70/SOT− 323 CASE 419 −04 STYLE 3 Features • NSV Prefix for Automotive and Other Applications Requiring • 1 2 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM 20 MG G MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. © Semiconductor Components Industries, LLC, 2016 August, 2021 − Rev. 9 1 1 20 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MMBT2907AWT1G SC−70 (Pb−Free) 3000 Tape & Reel NSVMMBT2907AWT1G SC−70 (Pb−Free) 3000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBT2907AWT1/D MMBT2907AWT1G, NSVMMBT2907AWT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 2) (IC = −10 mAdc, IB = 0) V(BR)CEO −60 − Vdc Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO −60 − Vdc Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL − −50 nAdc Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc 75 100 100 100 50 − − − 340 − − − −0.4 −1.6 − − −1.3 −2.6 fT 200 − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF ton − 45 td − 10 tr − 40 ts − 80 tf − 30 toff − 100 OFF CHARACTERISTICS ON CHARACTERISTICS(3) DC Current Gain (Note 2) (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = −500 mAdc, VCE = −10 Vdc) HFE Collector −Emitter Saturation Voltage (Note 2) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 2) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −50 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn−On Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) Delay Time Rise Time Storage Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = 15 mAdc) Fall Time Turn−Off Time ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns -30 V 200 ns -6.0 V 1.0 k 1.0 k 0 50 -16 V +15 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit www.onsemi.com 2 MMBT2907AWT1G, NSVMMBT2907AWT1G TYPICAL CHARACTERISTICS 1000 VCE = 10 V hFE, DC CURRENT GAIN TJ = 150°C 25°C 100 -55°C 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25°C tf 30 20 td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 30 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 t′s = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn−On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−Off Time www.onsemi.com 3 MMBT2907AWT1G, NSVMMBT2907AWT1G TYPICAL SMALL−SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25°C 100 VCE = 2 V C, CAPACITANCE (pF) fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) 1000 100 10 1 0.01 1 0.1 10 100 1 0.1 1 10 REVERSE VOLTAGE (V) Figure 7. Current−Gain − Bandwidth Product Figure 8. Capacitances 100 1.1 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 150°C 25°C −55°C 0.1 IC/IB = 10 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.001 0.01 0.1 0.2 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. Collector Emitter Saturation Voltage vs. Collector Current Figure 10. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) Cobo 10 IC, COLLECTOR CURRENT (mA) 1 0.01 Cibo 1.2 1.1 VCE = 1 V 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Voltage vs. Collector Current www.onsemi.com 4 1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative