MURB1660CTT4G

MURB1660CT, NRVUB1660CTT4G Switch Mode Power Rectifier D2PAK Power Surface Mount Package http://onsemi.com These state−of−the−art devices are designed for use in switching power supplies, inverters, and as free wheeling diodes. Features • • • • • • • • • • • Package Designed for Power Surface Mount Applications Ultrafast 60 Nanosecond Recovery Times 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in High Temperature Glass Passivated Junction High Voltage Capability to 600 V Low Leakage Specified @ 150°C Case Temperature Short Heat Sink Tab Manufactured − Not Sheared! Similar in Size to Industrial Standard TO−220 Package NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant ULTRAFAST RECTIFIER 16 AMPERES, 600 VOLTS D2PAK CASE 418B STYLE 3 1 4 3 MARKING DIAGRAM AY WW U1660G AKA Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: ♦ Machine Model, C > 400 V ♦ Human Body Model, 3B > 8000 V D2PAK CASE 418AJ STYLE 3 A Y WW U1660 G AKA = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device MURB1660CTG Package Shipping† D2PAK 50 Units/Rail (418AJ) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 9 1 MURB1660CTT4G D2PAK (418AJ) 800 / Tape & Reel NRVUB1660CTT4G D2PAK (418B) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MURB1660CT/D MURB1660CT, NRVUB1660CTT4G MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 150°C) Total Device IF(AV) 8.0 16 A Rating Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 16 A 100 Operating Junction and Storage Temperature Range TJ, Tstg °C −65 to +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Leg) Rating Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 50 °C/W TL 260 °C Symbol Max Unit Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds 1. See Chapter 7 for mounting conditions. ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 8.0 Amp, TC = 150°C) (iF = 8.0 Amp, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 150°C) (Rated dc Voltage, TC = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/ms) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr V 1.20 1.50 mA 500 10 ns 60 50 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 K 20 1.0 K 400 I R, REVERSE CURRENT (A) μ i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 100 50 TJ = 150°C 10 25°C 5.0 2.0 100°C 1.0 TJ = 150°C 10 100°C 2.0 1.0 0.4 25°C 0.1 0.04 0.3 0.1 100 40 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 100 vF, INSTANTANEOUS VOLTAGE (V) 200 300 400 500 VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg http://onsemi.com 2 600 10 PF(AV), AVERAGE POWER DISSIPATION (WATTS I F(AV), AVERAGE FORWARD CURRENT (AMPS) MURB1660CT, NRVUB1660CTT4G RATED VR APPLIED RqJC = 2°C/W 9.0 8.0 DC 7.0 6.0 5.0 4.0 SQUARE WAVE 3.0 2.0 1.0 0 140 150 180 160 170 TC, CASE TEMPERATURE (°C) 14 13 12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 SQUARE WAVE DC TJ = 175°C 0 1 9 10 Figure 4. Power Dissipation, Per Leg 1.0 D = 0.5 0.5 0.2 P(pk) 0.1 0.1 0.05 0.01 ZqJC(t) = r(t) RqJC D curves apply for power pulse train shown read time at T1 t1 0.05 t2 Duty Cycle, D = t1/t2TJ(pk) - TC = P(pk) ZqJC(t) SINGLE PULSE 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 t, TIME (ms) Figure 5. Thermal Response 1K 300 C, CAPACITANCE (pF) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Current Derating, Case, Per Leg 2 3 4 5 6 7 8 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TJ = 25°C 100 30 10 1 10 VR, REVERSE VOLTAGE (V) Figure 6. Typical Capacitance, Per Leg http://onsemi.com 3 100 100 200 500 1K MURB1660CT, NRVUB1660CTT4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) M T B VARIABLE CONFIGURATION ZONE M N R P L M L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE U L INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MURB1660CT, NRVUB1660CTT4G PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE B B E2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CHAMFER OPTIONAL 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.005 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN DIMENSIONS E, L1, D1 AND E1. 6. OPTIONAL MOLD FEATURE A A E SEATING PLANE L1 c2 NOTE 3 A D1 L1 D H DETAIL C E1 0.10 M B A M L2 A e c NOTE 6 2X TOP VIEW b 0.10 VIEW A−A SIDE VIEW M B A M H GAUGE PLANE L3 A1 L M B SEATING PLANE DETAIL C RECOMMENDED SOLDERING FOOTPRINT VIEW A−A OPTIONAL CONSTRUCTIONS DIM A A1 b c c2 D D1 E E1 e H L L1 L2 L3 M INCHES MIN MAX 0.160 0.190 0.000 0.010 0.020 0.039 0.012 0.029 0.045 0.065 0.330 0.380 0.260 −−−− 0.380 0.420 0.245 −−−− 0.100 BSC 0.575 0.625 0.070 0.110 −−−− 0.066 −−−− 0.070 0.010 BSC 0° 8° MILLIMETERS MIN MAX 4.06 4.83 0.00 0.25 0.51 0.99 0.30 0.74 1.14 1.65 8.38 9.65 6.60 −−−− 9.65 10.67 6.22 −−−− 2.54 BSC 14.60 15.88 1.78 2.79 −−−− 1.68 −−−− 1.78 0.25 BSC 0° 8° STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE 0.436 0.366 0.653 2X 0.169 2X 0.063 0.100 PITCH DIMENSIONS: INCHES ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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