RB520S30T1G

RB520S30T1G, RB520S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 mA Low Reverse Current ESD Rating: Class 3B per Human Body Model Class C per Machine Model These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com 30 VOLT SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA 1 SOD−523 CASE 502 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Symbol Max PD Unit 200 mW 1.57 mW/°C Thermal Resistance, Junction−to−Ambient RJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Non−Repetitive Peak Forward Current, tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Thermal Resistance, Junction−to−Ambient RJA 635 °C/W 1 5J = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation position may vary depending upon manufacturing location. Device Package Shipping† RB520S30T1G SOD−523 (Pb−Free) 4 mm Pitch 3000/Tape & Reel RB520S30T5G SOD−523 (Pb−Free) 2 mm Pitch 8000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Reverse Leakage (VR = 10 V) IR − − 1.0 A Forward Voltage (IF = 200 mA) VF © Semiconductor Components Industries, LLC, 2011 August, 2017 − Rev. 11 2 ORDERING INFORMATION 1. FR−5 Minimum Pad. Characteristic 5J M G G − − 0.60 1 Vdc †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: RB520S30T1/D RB520S30T1G, RB520S30T5G 820  +10 V 2k 0.1 F IF 100 H t tp r 0.1 F IF t trr 10% t DUT 50  Output Pulse Generator 50  Input Sampling Oscilloscope 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 200 1000 TA = 150°C 100 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 100 150°C 10 125°C 1.0 85°C 25°C −40°C −55°C TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0.1 0.2 0.3 0.4 0.5 0 0.6 CT, TOTAL CAPACITANCE (pF) 20 Figure 3. Leakage Current 10 8 6 4 2 5 15 Figure 2. Forward Voltage 12 0 10 VR, REVERSE VOLTAGE (VOLTS) 14 0 5 VF, FORWARD VOLTAGE (VOLTS) IFSM, FORWARD SURGE MAX CURRENT (A) 0.1 0.0 10 15 20 25 30 25 25 Based on square wave currents TJ = 25°C prior to surge 20 15 10 5 0 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms) Figure 4. Total Capacitance Figure 5. Forward Surge Current www.onsemi.com 2 30 1000 RB520S30T1G, RB520S30T5G PACKAGE DIMENSIONS SOD−523 CASE 502 ISSUE E −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X L 1.80 0.48 2X 0.40 2X PACKAGE OUTLINE L2 BOTTOM VIEW DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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