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2SA1806GRL

2SA1806GRL

  • 厂商:

    NAIS(松下)

  • 封装:

    SC89,SOT490

  • 描述:

    TRANS PNP 15V 0.05A SSMINI-3

  • 数据手册
  • 价格&库存
2SA1806GRL 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1806G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching ■ Package • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing • Code SSMini3-F3 • Marking Symbol: AK • Pin Name 1. Base 2. Emitter 3. Collector d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −15 V Collector-emitter voltage (Base open) VCEO −15 V Emitter-base voltage (Collector open) VEBO −4 V Collector current IC −50 mA Peak collector current ICP −100 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Collector-base cutoff current (Emitter open) ICBO IEBO tin Emitter-base cutoff current (Collector open) Conditions ue Parameter nc Transition frequency e/ Collector-emitter saturation voltage Max Unit VCB = −8 V, IE = 0 − 0.1 µA VCE = −3 V, IC = 0 − 0.1 µA 150  VCE = −1 V, IC = −10 mA 50 hFE2 VCE = −1 V, IC = −1 mA 30 VCE(sat) IC = −10 mA, IB = −1 mA on Di sc Forward current transfer ratio Min hFE1 * VCB = −10 V, IE = 10 mA, f = 200 MHz fT Typ − 0.1 800 − 0.2 V 1 500 MHz Cob VCB = −5 V, IE = 0, f = 1 MHz 1 pF Turn-on time ton Refer to the switching time 12 ns Turn-off time toff measurement circuit 20 ns Storage time ts 19 ns Pl M ain te na Collector output capacitance (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE1 50 to 120 90 to 150 Ranking is not given for any product. Publication date: May 2007 SJC00381AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1806G Switching time measurement circuit ton , toff Test circuit 0.1 µF VBB = −10 V VCC = −3 V 62 Ω VOUT 2 kΩ 52 Ω 140 508 Ω 0.1 µF VIN 30 Ω VOUT 34 Ω 51 Ω 120 100 80 M Di ain sc te on na tin nc ue e/ d 51 Ω Collector power dissipation PC (mW) VCC = −1.5 V VBB VIN PC  Ta tstg Test circuit 10% VIN 90% ton VIN = 9.8 V VBB = −8.0 V Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −500 µA −400 µA −50 −300 µA −40 −200 µA −30 −100 µA −20 −10 −4 −6 −8 −10 IC / IB = 10 −1.0 Ta = 75°C −25°C − 0.1 25°C − 0.01 −1 nc Ta = 75°C te na 140 25°C 120 −10 −100 −1 000 Collector current IC (mA) 80 −25°C 60 40 20 0 − 0.1 −1 −10 Collector current IC (mA) 2 Cob  VCB 10 f = 1 MHz Ta = 25°C 1 Pl 100 M ain Forward current transfer ratio hFE 160 e/ VCE = −1 V Collector output capacitance C (pF) (Common base, input open circuited) ob on Di sc hFE  IC 180 20 40 60 80 100 120 140 VBE(sat)  IC tin Collector-emitter voltage VCE −12 (V) −10 ue −2 0 VCE(sat)  IC IB = −600 µA 0 0 Ambient temperature Ta (°C) Ta = 25°C −60 0 20 VIN = 9.0 V IC  VCE −80 −70 40 tstg toff VIN = −5.8 V VBB = Ground 90% 90% VOUT 10% 60 −100 0.1 0 2 4 6 8 10 12 14 16 18 Collector-base voltage VCB (V) SJC00381AED −10 Base-emitter saturation voltage VBE(sat) (V) 90% VOUT 0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. VIN 0 −1 − 0.1 − 0.1 IC / IB = 10 Ta = −25°C 75°C 25°C −1 −10 −100 Collector current IC (mA) −1 000 +0.05 −0.03 3 ±0.05 +0.05 1 2 (0.50) (0.50) 0.13 −0.02 +0.05 1.00 ±0.05 ±0.05 0.85 pla in ea c ne lu 0.70 1.60 se de p d lan m m s ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i (5°) w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P 0.375 ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta (0.45) .jp orm ge /e a n/ tio . n. 0.26 −0.02 +0.05 −0.03 ed +0.05 0 to 0.10 inu (5°) on t Di sc ce / en an 1.60 −0.03 Pl ain t M M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 Unit: mm Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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