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2SD0875GSL

2SD0875GSL

  • 厂商:

    NAIS(松下)

  • 封装:

    TO-243AA

  • 描述:

    TRANS NPN 80V 0.5A MINIP-3

  • 数据手册
  • 价格&库存
2SD0875GSL 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 5 V 0.5 A 1 A Collector current IC Peak collector current ICP Collector power dissipation * PC Junction temperature Tj Storage temperature Tstg 1 W 150 °C −55 to +150 °C ■ Marking Symbol: X cm2 ue or more, and the Note) *: Printed circuit board: Copper foil area of 1 board thickness of 1.7 mm for the collector portion Parameter ce /D isc on tin ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 80 V Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 80 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 hFE1 * VCE = 10 V, IC = 150 mA 130 hFE2 VCE = 50 V, IC = 500 mA 50 Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.2 0.4 V Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 0.85 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 11 int en an Collector-base voltage (Emitter open) Ma Forward current transfer ratio Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob V 0.1 µA 330  MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 130 to 220 185 to 330 Publication date: October 2007 SJD00337AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD0875G IC  VCE Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Ta = 25°C IB = 10 mA 1.0 Collector current IC (A) 1.2 Collector power dissipation PC (W) VCE(sat)  IC 1.2 1.0 0.8 8 mA 7 mA 6 mA 0.8 5 mA 0.6 4 mA 10 IC / IB = 10 1 Ta = 75°C 25°C 0.1 M Di ain sc te on na tin nc ue e/ d 0.6 9 mA Collector-emitter saturation voltage VCE(sat) (V) PC  Ta 1.4 0.4 60 80 100 120 140 160 25°C Ta = −25°C 75°C 0.1 10 100 1 000 en an IE = 0 f = 1 MHz Ta = 25°C 10 250 Ta = 75°C 200 25°C −25°C 150 100 50 0 Collector current IC (A) 30 8 1 10 100 1 000 20 Safe operation area Single pulse TC = 25°C 1 IC t=1s DC 10−1 10−2 10 0 1 0.001 1 10 Collector-base voltage VCB (V) 100 10−3 0.1 1 10 100 Collector-emitter voltage VCE (V) SJD00337AED 10 100 1 000 Collector current IC (mA) fT  I E 200 VCB = 10 V Ta = 25°C 160 120 80 40 0 −1 −10 Emitter current IE (mA) Collector current IC (mA) ICP int 40 6 100 Ma Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 50 4 VCE = 10 V ce /D isc on tin Collector current IC (mA) 2 2 300 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 10 1 0 hFE  IC IC / IB = 10 1 0.01 Collector-emitter voltage VCE (V) VBE(sat)  IC 100 0 Transition frequency fT (MHz) 40 −25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 20 1 mA ue 0 Ambient temperature Ta (°C) 0.01 2 mA 0.2 0.2 0 3 mA 0.4 −100 (5°) ue ±0.20 4.50 ±0.10 1.60 ±0.20 1 0.40 ±0.08 1.50 ±0.10 3.00 ±0.15 1.50 ±0.10 2 0.50 ±0.08 (45°) ±0.10 ±0.10 SJD00337AED ±0.10 di p Pl lan nclu ea e se pla m d m1.00des n ai a fo htt visit 4.00 p:/ fo 2.60d ed d nten inten llow /w llo is isc an an ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro 2.50 co L a d t ty du n.p bo yp pe (5°) ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o 0.50 max. / n. ce /D isc on tin an en int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SD0875G MiniP3-F2 Unit: mm 3 0.41 ±0.03 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2SD0875GSL 价格&库存

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