This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD0875G
Silicon NPN epitaxial planar type
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For low-frequency power amplification
Complementary to 2SB0767G
■ Package
• Large collector power dissipation PC
• High collector-emitter voltage (Base open) VCEO
• Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
• Code
MiniP3-F2
• Pin Name
1: Base
2: Collector
3: Emitter
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■ Features
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5
V
0.5
A
1
A
Collector current
IC
Peak collector current
ICP
Collector power dissipation
*
PC
Junction temperature
Tj
Storage temperature
Tstg
1
W
150
°C
−55 to +150
°C
■ Marking Symbol: X
cm2
ue
or more, and the
Note) *: Printed circuit board: Copper foil area of 1
board thickness of 1.7 mm for the collector portion
Parameter
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■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
Min
Typ
Max
Unit
VCBO
IC = 10 µA, IE = 0
80
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 µA, IB = 0
80
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
hFE1 *
VCE = 10 V, IC = 150 mA
130
hFE2
VCE = 50 V, IC = 500 mA
50
Collector-emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC = 300 mA, IB = 30 mA
0.85
1.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
120
VCB = 10 V, IE = 0, f = 1 MHz
11
int
en
an
Collector-base voltage (Emitter open)
Ma
Forward current transfer ratio
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
V
0.1
µA
330
MHz
20
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
130 to 220
185 to 330
Publication date: October 2007
SJD00337AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0875G
IC VCE
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Ta = 25°C
IB = 10 mA
1.0
Collector current IC (A)
1.2
Collector power dissipation PC (W)
VCE(sat) IC
1.2
1.0
0.8
8 mA
7 mA
6 mA
0.8
5 mA
0.6
4 mA
10
IC / IB = 10
1
Ta = 75°C
25°C
0.1
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0.6
9 mA
Collector-emitter saturation voltage VCE(sat) (V)
PC Ta
1.4
0.4
60
80 100 120 140 160
25°C
Ta = −25°C
75°C
0.1
10
100
1 000
en
an
IE = 0
f = 1 MHz
Ta = 25°C
10
250
Ta = 75°C
200
25°C
−25°C
150
100
50
0
Collector current IC (A)
30
8
1
10
100
1 000
20
Safe operation area
Single pulse
TC = 25°C
1
IC
t=1s
DC
10−1
10−2
10
0
1
0.001
1
10
Collector-base voltage VCB (V)
100
10−3
0.1
1
10
100
Collector-emitter voltage VCE (V)
SJD00337AED
10
100
1 000
Collector current IC (mA)
fT I E
200
VCB = 10 V
Ta = 25°C
160
120
80
40
0
−1
−10
Emitter current IE (mA)
Collector current IC (mA)
ICP
int
40
6
100
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
50
4
VCE = 10 V
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Collector current IC (mA)
2
2
300
Forward current transfer ratio hFE
Base-emitter saturation voltage VBE(sat) (V)
10
1
0
hFE IC
IC / IB = 10
1
0.01
Collector-emitter voltage VCE (V)
VBE(sat) IC
100
0
Transition frequency fT (MHz)
40
−25°C
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20
1 mA
ue
0
Ambient temperature Ta (°C)
0.01
2 mA
0.2
0.2
0
3 mA
0.4
−100
(5°)
ue
±0.20
4.50 ±0.10
1.60 ±0.20
1
0.40 ±0.08
1.50 ±0.10
3.00 ±0.15
1.50 ±0.10
2
0.50 ±0.08
(45°)
±0.10
±0.10
SJD00337AED
±0.10
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0875G
MiniP3-F2
Unit: mm
3
0.41 ±0.03
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.