2SD2345GSL

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2345G Silicon NPN epitaxial planar type For low-frequency amplification ■ Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO • Low noise voltage NV • Code SSMini3-F3 • Marking Symbol: 1Z • Pin Name 1: Base 2: Emitter 3: Collector di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 15 V 50 mA 100 mA 125 mW 125 °C −55 to +125 °C Parameter ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 40 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 15 V ICBO VCB = 20 V, IE = 0 100 nA ICEO VCE = 20 V, IB = 0 1 µA hFE VCE = 10 V, IC = 2 mA 2 000  VCE(sat) IC = 10 mA, IB = 1 mA 0.05 0.20 V VCB = 10 V, IE = −2 mA, f = 200 MHz 120 an Collector-base voltage (Emitter open) en Collector-base cutoff current (Emitter open) int Collector-emitter cutoff current (Base open) Ma Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency fT 50 V 400 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 400 to 800 600 to 1 200 1 000 to 2 000 Publication date: June 2007 SJC00408AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2345G PC  Ta IC  VCE 150 IC  VBE 160 120 VCE = 10 V 125 25°C 100 75 Collector current IC (mA) Collector current IC (mA) 100 120 IB = 100 µA 90 µA 80 µA 70 µA 60 µA 50 µA 100 80 Ta = 75°C 50 30 µA 20 µA 20 60 60 0 80 100 120 140 160 Forward current transfer ratio hFE Ta = 75°C −25°C 1 10 100 an en Noise voltage NV (mV) int Ma Collector output capacitance C (pF) (Common base, input open circuited) ob 5 0 900 −25°C 600 300 4 3 2 10 0.8 1.2 200 150 100 50 0 − 0.1 100 Collector current IC (mA) −1 −10 10 Collector-base voltage VCB (V) 100 NV  IC NV  VCE 100 Rg = 100 kΩ 80 Rg = 100 kΩ 60 22 kΩ 40 5 kΩ 0 0.01 −100 Emitter current IE (mA) 60 22 kΩ 40 5 kΩ 20 20 1 2.0 VCB = 10 V Ta = 25°C IC = 1 mA GV = 80 dB Function = FLAT Ta = 25°C 1 0 1.6 fT  I E 250 25°C 1 0.4 Base-emitter voltage VBE (V) VCE = 10 V 100 V = 10 V CE GV = 80 dB Function = FLAT T = 25°C 80 a IE = 0 f = 1 MHz Ta = 25°C 6 0 12 Ta = 75°C 0 0.1 Cob  VCB 7 10 1 200 ce /D isc on tin Collector current IC (mA) 8 8 1 500 ue 1 0.01 0.1 6 hFE  IC 10 25°C 4 1 800 IC / IB = 10 0.1 2 Collector-emitter voltage VCE (V) VCE(sat)  IC 100 0 Transition frequency fT (MHz) 40 20 10 µA Noise voltage NV (mV) 20 40 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) 40 µA 40 25 0 2 60 −25°C 80 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) Ta = 25°C 140 0.1 Collector current IC (mA) SJC00408AED 1 0 1 10 100 Collector-emitter voltage VCE (V) +0.05 0.85 −0.03 3 ±0.05 0.26 −0.02 +0.05 2 (0.50) 0.13 −0.02 1.00 ±0.05 ea ±0.05 pla nc 1.60 ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing(5°) ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro 0.375 co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm (0.45) . /en at i o / n. +0.05 di ue (0.50) 0.70 −0.03 (5°) isc on tin /D 1.60 −0.03 Pl ce an 1 0 to 0.10 en int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 Unit: mm +0.05 +0.05 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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