DB2F43100L1

Doc No. TT4-ZZ-02049 Revision. 0 Product Standards Schottky Barrier Diode DB2F43100L1 DB2F43100L1 For rectification Unit: mm 2 1 1  Marking Symbol: E6 0.35  Packaging Non-repetitive Peak Surge Forward Current *1,4 Operating Junction Temperature Ambient Temperature Storage Temperature Note) *1: *2: *3: *4: *5: *5 Max 40 40 5.0 40 150 +150 +150 Unit V V A A °C °C °C 0.10 Min -40 -55 1. Cathode Panasonic JEITA Code Ta = Tj = 25℃ Square wave : σ = 0.5 Solder Point Temperature : Tsp ≦ 122℃ Square wave : Tp = 5 ms Power derating is necessary so that Tj < 150℃. VF IR Ct trr Note) 2 2 1 1 (R 0. (R 17 5) 0. (0.425)(0.425) Tp Tp Duty Cycle : σ = Forward Voltage Reverse Current Terminal Capacitance Reverse Recovery Time *1 1.10 2. Anode DCSP1616010-N1 — — IF (Waveform definition)  Electrical Characteristics Ta = 25 °C ± 3 °C Parameter Symbol (0.425) *1 Symbol VR VRM IF(AV) IFSM Tj Ta Tstg (0.425) Reverse Voltage *1 Maximum Peak Reverse Voltage Average Forward Current *2,3 0.10  Absolute Maximum Ratings Parameter 1.10 0.75 Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) 0.75 1.60 2 0.35 1.60 1.60  Low forward voltage VF  Forward current (Average) IF(AV) ≦ 5.0 A rectification is possible  RoHS compliant  (EU RoHS / MSL:Level 1 compliant) 1.60  Features T Time T Conditions IF = 5.0 A VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 10 mA Min - - Typ 0.51 15 140 45 Max 0.6 100 - Unit V μA pF ns 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: Measurement circuit, input pulse, output pulse for Reverse recovery time (Measurement circuit) (Input pulse) tr (2) (1) DUT (3) tp 10% VR 90% (Output pulse) t trr IF t Irr = IR ÷10 IR (1) Bias Insertion Unit (N-50BU) tp = 2 μs IF = 100 mA (2) Pulse Generator (PG-10N), RS = 50 Ω tr = 0.35 ns IR = 100 mA (3) Wave Form Analyzer (SAS-8130), Ri = 50 Ω σ = 0.05 Irr = 10 mA Page 1 of 8 Established : 2018-03-08 Revised : ####-##-## 17 5) Doc No. TT4-ZZ-02049 Revision. 0 Product Standards Schottky Barrier Diode DB2F43100L1 Electrical Characteristics Technical Data (Reference) IF - VF / Typical Data Ct - VR / Typical Data 1.0E+01 1000 (1) (2) Terminal Capacitance : Ct [pF] Forward Current : IF [A] 1.0E+00 900 1.0E-01 1.0E-02 (3) (4) 1.0E-03 (5) 800 700 600 (4) 500 400 300 200 100 0 1.0E-04 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.7 Forward Voltage : VF [V] 10 20 30 40 Reverse Voltage : VR [V] IR - VR / Typical Data 1.0E-01 1.0E-02 (2) Reverse Current : IR [A] 1.0E-03 (3) (Graph legends) (1) Ta = 150 (2) Ta = 125 (3) Ta = 85 (4) Ta = 25 (5) Ta = -40 ℃ ℃ ℃ ℃ ℃ 1.0E-04 (4) 1.0E-05 1.0E-06 (5) 1.0E-07 1.0E-08 1.0E-09 1.0E-10 0 10 20 30 40 Reverse Voltage : VR [V] Page 2 of 8 Established : 2018-03-08 Revised : ####-##-## Doc No. TT4-ZZ-02049 Revision. 0 Product Standards Schottky Barrier Diode DB2F43100L1 Electrical Characteristics Technical Data (Reference) PF(AV) - IF(AV) / Typical Data Average Forward Power Dissipation : PF(AV) [W] 5.0 4.5 Tj = 25°C (Waveform definition) (1) 4.0 (2) IF Tp (3) 3.5 (4) 3.0 Time T Duty Cycle : σ = 2.5 Tp T 2.0 1.5 (Graph legends) (1) σ= 1.0 (2) σ= 0.8 (3) σ= 0.5 (4) σ= 0.3 1.0 0.5 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Average Forward Current : IF(AV) [A] PR(AV) - VR / Typical Data Average Reverse Power Dissipation : PR(AV) [W] 0.00100 Tj = 25°C (Waveform definition) 0.00080 T VR 0.00060 Time Tp (1) Duty Cycle : σ = 0.00040 Tp T (2) (3) 0.00020 (4) (Graph legends) (1) σ= 1.0 (2) σ= 0.7 (3) σ= 0.5 (4) σ= 0.2 0.00000 0 10 20 30 40 Reverse Voltage : VR [V] Page 3 of 8 Established : 2018-03-08 Revised : ####-##-## Doc No. TT4-ZZ-02049 Revision. 0 Product Standards Schottky Barrier Diode DB2F43100L1 Electrical Characteristics Technical Data (Reference) PF(AV) - IF(AV) / Typical Data Average Forward Power Dissipation : PF(AV) [W] 5.0 Tj = 150°C 4.5 (Waveform definition) (1) 4.0 IF (2) Tp 3.5 (3) 3.0 Time T (4) Duty Cycle : σ = 2.5 Tp T 2.0 1.5 (Graph legends) (1) σ= 1.0 (2) σ= 0.8 (3) σ= 0.5 (4) σ= 0.3 1.0 0.5 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Average Forward Current : IF(AV) [A] PR(AV) - VR / Typical Data Average Reverse Power Dissipation : PR(AV) [W] 0.50 Tj = 125°C (Waveform definition) 0.40 T Time (1) VR 0.30 Tp Duty Cycle : σ = (2) Tp T 0.20 (3) (Graph legends) (1) σ= 1.0 (2) σ= 0.7 (3) σ= 0.5 (4) σ= 0.2 0.10 (4) 0.00 0 5 10 15 20 25 30 35 40 45 Reverse Voltage : VR [V] Page 4 of 8 Established : 2018-03-08 Revised : ####-##-## Doc No. TT4-ZZ-02049 Revision. 0 Product Standards Schottky Barrier Diode DB2F43100L1  Thermal Characteristics Parameter Thermal Resistance, Junction to Solder Point Symbol Conditions Min Typ Max Unit Rth(j-sp) Ta = 25℃, in free air - 8 - °C/W Thermal Resistance, Junction to Ambient *1 Rth(j-a) Ta = 25℃, in free air - 43 - °C/W Thermal Resistance, Junction to Ambient *2 Rth(j-a) Ta = 25℃, in free air - 250 - °C/W Note) *1: Device mounted on Ceramic substrate (70mm×70mm×t1.0mm). *2: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (50.7mm 2 area, 36μm thick). (Evaluation board outline) Copper wiring (50.7mm2) 70mm 25.4mm Ceramic substrate FR4 PCB 70mm 25.4mm Thermal Characteristics Technical Data (Reference) Rth - T *1 / Typical Data Thermal Resistance : Rth [℃/W] 1000 (1) 100 (2) 10 1 0.001 0.01 0.1 1 10 100 1000 Applying Time : T [s] Note) *1: Single pulse measurement (Waveform definition) Power (Graph legends) Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), (1) copper wiring (50.7mm2 area, 36μm thick). Device mounted on Ceramic substrate (70mm×70mm×t1.0mm). (2) Time Applying Time : T Page 5 of 8 Established : 2018-03-08 Revised : ####-##-## Doc No. TT4-ZZ-02049 Revision. 0 Product Standards Schottky Barrier Diode DB2F43100L1 Thermal Characteristics Technical Data (Reference) Effective Transient Thermal Resistance - Tp *1 / Typical Data Effective Transient Thermal Resistance [℃/W] 1000 100 (Evaluation board outline) (Waveform definition) (1) Power Tp (2) (3) 10 (4) (6) 1 0.001 Tp Duty Cycle : σ = (5) 0.0001 Time T 0.01 0.1 1 10 100 1000 T (Graph legends) (1) σ = 0.5 (2) σ = 0.2 (3) σ = 0.1 (4) σ = 0.05 (5) σ = 0.02 (6) σ= 0 Tp [s] Effective Transient Thermal Resistance - Tp *2 / Typical Data Effective Transient Thermal Resistance [℃/W] 1000 (Evaluation board outline) (Waveform definition) 100 Power T (1) 10 (4) (5) (6) 0.001 Time Duty Cycle : σ = (2) (3) 1 0.0001 Tp 0.01 0.1 1 10 100 1000 Tp T (Graph legends) (1) σ = 0.5 (2) σ = 0.2 (3) σ = 0.1 (4) σ = 0.05 (5) σ = 0.02 (6) σ= 0 Tp [s] Note) *1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), copper wiring (50.7mm 2 area, 36μm thick). *2: Device mounted on Ceramic substrate (70mm×70mm×t1.0mm). Page 6 of 8 Established : 2018-03-08 Revised : ####-##-## Doc No. TT4-ZZ-02049 Revision. 0 Product Standards Schottky Barrier Diode DB2F43100L1 Power Derating Technical Data (Reference) IF(AV) - Ta *1 / Typical Data IF(AV) - Ta *2 / Typical Data 2.0 8.0 (1) Tj =150°C 7.0 (2) Average Forward Current : IF(AV) [A] Average Forward Current : IF(AV) [A] 1.8 1.6 (3) 1.4 (4) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Tj =150°C (1) 6.0 (2) 5.0 (3) 4.0 (4) 3.0 2.0 1.0 0.0 0 25 50 75 100 125 150 Ambient Temperature : Ta [℃] 0 25 50 (Graph legends) (1) σ = 1.0 (2) σ = 0.8 (3) σ = 0.5 (4) σ = 0.3 8.0 Tj =150°C Average Forward Current : IF(AV) [A] (1) (2) 6.0 100 125 (Waveform definition) IF Tp T Duty Cycle : σ = 5.0 150 Ambient Temperature : Ta [℃] IF(AV) - Tsp / Typical Data 7.0 75 Time Tp T (3) 4.0 Note) *1: Device mounted on a FR4 PCB (25.4mm×25.4mm, 1mm thick), (4) copper wiring (50.7mm2 area, 36μm thick). (Evaluation board outline) 3.0 2.0 1.0 *2: Device mounted on Ceramic substrate (70mm×70mm×t1.0mm). 0.0 0 25 50 75 100 125 150 (Evaluation board outline) Solder Point Temperature : Tsp [℃] Page 7 of 8 Established : 2018-03-08 Revised : ####-##-## Doc No. TT4-ZZ-02049 Revision. 0 Product Standards Schottky Barrier Diode DB2F43100L1 DCSP1616010-N1 Unit: mm 1.60±0.03 1.60±0.03 2 0.35±0.03 1 1.10±0.03 0.10±0.02 0.75 2 (0.425) 1 (R 0. 17 5) (0.425)  Land Pattern (Reference) 1.10 0.75 0.35 Unit: mm (R 0. 17 5) Page 8 of 8 Established : 2018-03-08 Revised : ####-##-## Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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