MA3X72700L

This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X727 (MA727) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 1.9±0.1 (0.65) • Reverse voltage VR = 50 V is guaranteed • Forward current (Average) I F(AV) = 200 mA rectification is possible 2.8+0.2 –0.3 ■ Features 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d 3 2.90+0.20 –0.05 Symbol VR Repetitive peak reverse voltage VRRM Peak forward current IFM Forward current (Average) IF(AV) Non-repetitive peak forward surge current * IFSM Junction temperature Tj Storage temperature Tstg Rating Unit 50 V 50 V 300 mA 200 mA 1 A 150 °C −55 to +150 °C 1.1+0.3 –0.1 Parameter Reverse voltage 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.2 –0.1 10˚ 1: Anode 2: N.C. 3: Cathode Mini3-G1 Package EIAJ: SC-59 Marking Symbol: M1Z Internal Connection 3 Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) 1 2 ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Forward voltage VF1 VF2 IR Ct en Terminal capacitance an Reverse current trr Ma int Reverse recovery time * Conditions Min Typ Max Unit IF = 30 mA 0.36 V IF = 200 mA 0.55 V 200 µA VR = 50 V VR = 0 V, f = 1 MHz 30 pF IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3.0 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.   3. Absolute frequency of input and output is 1 GHz. 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SKH00082CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA3X727 IF  VF IR  VR 103 VF  Ta 105 0.5 Ta = 150°C Reverse current IR (µA) 100°C 10 IF = 200 mA 104 −20°C 25°C 0.4 103 100°C 102 Forward voltage VF (V) Ta = 150°C 100 mA 0.3 M Di ain sc te on na tin nc ue e/ d Forward current IF (mA) 102 1 10−1 0.1 10 0 0.1 0.2 0.3 0.4 0.5 1 0.6 Forward voltage VF (V) 0 10 20 30 40 50 60 IR  Ta Ct  VR 30 f = 1 MHz Ta = 25°C 25 Terminal capacitance Ct (pF) 103 VR = 30 V 5V 102 10 1 −40 20 15 10 5 0 0 40 80 120 160 200 0 10 20 30 40 an en int Ma 2 50 Reverse voltage VR (V) ce /D isc on tin Ambient temperature Ta (°C) ue Reverse current IR (µA) 104 SKH00082CED 0 −40 0 40 80 120 160 Ambient temperature Ta (°C) Reverse voltage VR (V) 105 30 mA di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 10−2 25°C 0.2 60 200 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.