UP04113G0L

This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04113G Silicon PNP epitaxial planar type For switching/digital circuits  Package  Two elements incorporated into one package (Transistors with built-in resistor)  Reduction of the mounting area and assembly cost by one half  Code SSMini6-F2  Pin Name 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) M Di ain sc te on na tin nc ue e/ d  Features  Basic Part Number  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n.  UNR2113 × 2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V IC –100 mA PT 125 mW Tj 125 °C Tstg –55 to +125 °C Collector current Total power dissipation Junction temperature Storage temperature  Electrical Characteristics Ta = 25°C±3°C Parameter 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) Symbol  Marking Symbol: 6S  Internal Connection Conditions Min (C1) (B2) (E2) 6 5 4 R1 47 kΩ Tr1 R2 47 kΩ R2 47 kΩ R1 47 kΩ Tr2 1 2 3 (E1) (B1) (C2) Typ Max Unit VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO isc on tin ue Collector-base voltage (Emitter open) IEBO Forward current transfer ratio hFE an ce /D Emitter-base cutoff current (Collector open) Ma int Output voltage high-level en Collector-emitter saturation voltage VCE(sat) VOH Output voltage low-level VOL Input resistance R1 Resistance ratio R1 / R2 Transition frequency fT VCB = –50 V, IE = 0 – 0.1 µA VCE = –50 V, IB = 0 – 0.5 µA VEB = –6 V, IC = 0 – 0.1 mA VCE = –10 V, IC = –5 mA 80 IC = –10 mA, IB = – 0.3 mA VCC = –5 V, VB = – 0.5 V, RL = 1 kΩ – 0.25 –4.9 VCC = –5 V, VB = –3.5 V, RL = 1 kΩ VCB = –10 V, IE = 1 mA, f = 200 MHz  V V – 0.2 V –30% 47 +30% kΩ 0.8 1.0 1.2  80 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2007 SJJ00404AED 1