UP04113

Composite Transistors UP0411x Series Silicon PNP epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.30) 6 5 4 1.20±0.05 1.60±0.05 0.20+0.05 –0.02 Unit: mm 0.10±0.02 5˚ (0.20) Display at No.1 lead 0.55±0.05 ■ Resistance by Part Number • UP04111 • UP04113 • UP04116 Marking Symbol (R1) 9U 10 kΩ 6S 47 kΩ 6U 4.7 kΩ (R2) 10 kΩ 47 kΩ  5˚ (0.20) 0.10 max. ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −100 125 125 −55 to +125 Unit V V mA mW °C °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Internal Connection 6 Tr1 R1 5 R2 4 R2 R1 Tr2 3 1 2 Publication date: December 2003 SJJ00001BED 1 UP0411x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current UP04111 (Collector open) UP04113 UP04116 Forward current transfer ratio UP04111 UP04113 UP04116 Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UP04113 Input resistance UP04111 UP04113 UP04116 Resistance ratio UP04111 UP04113 Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz R1 / R 2 0.8 R1 VCE(sat) VOH VOL IC = −10 mA, IB = − 0.3 mA VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ VCC = −5 V, VB = −2.5 V, RL = 1 kΩ VCC = −5 V, VB = −3.5 V, RL = 1 kΩ −30% 10 47 4.7 1.0 1.2  +30% kΩ −4.9 − 0.2 hFE VCE = −10 V, IC = −5 mA 35 80 160 460 − 0.25 V V V Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 VEB = −6 V, IC = 0 Min −50 −50 − 0.1 − 0.5 − 0.5 − 0.1 − 0.01  Typ Max Unit V V µA µA mA Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2 SJJ00001BED UP0411x Series Common characteristics chart PT  Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UP04111 IC  VCE Collector-emitter saturation voltage VCE(sat) (V) −10 Ta = 25°C −120 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −80 − 0.6 mA − 0.5 mA − 0.4 mA −40 − 0.3 mA − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 VCE(sat)  IC IC / IB = 10 hFE  IC VCE = −10 V Ta = 75°C 120 Collector current IC (mA) −1 25°C Forward current transfer ratio hFE 25°C 80 −25°C Ta = 75°C −25°C −10−1 −10−2 40 −10−3 −1 −10 −100 −1 000 0 − 0.1 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 f = 1 MHz Ta = 25°C −104 VO = −5 V Ta = 25°C IO  VIN −100 VIN  IO VO = − 0.2 V Ta = 25°C Output current IO (µA) Input voltage VIN (V) 100 −103 −10 10 −102 −1 1 −10 − 0.1 0.1 0 − 10 −20 −30 −1 − 1.0 − 1.2 − 1.4 −1.6 −1.8 −2.0 − 0.01 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00001BED 3 UP0411x Series Characteristics charts of UP04113 IC  VCE Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C −120 −10 VCE(sat)  IC IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA VCE = −10 V hFE  IC 250 Ta = 75°C VCE = −10 V Forward current transfer ratio hFE 200 25°C −25°C Collector current IC (mA) −1 −80 150 −40 − 0.1 Ta = 75°C 25°C −25°C 100 − 0.2 mA − 0.1 mA 50 0 0 −2 −4 −6 −8 −10 −12 − 0.01 −1 −10 −100 0 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25°C −104 IO  VIN V O = −5 V Ta = 25°C −100 VIN  IO VO = − 0.2 V Ta = 25°C Output current IO (µA) Input voltage VIN (V) −1.2 −1.4 −1.6 −1.8 −2.0 −103 −10 1 −102 −1 0.1 0 −10 −20 −30 −10 −1.0 − 0.1 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJJ00001BED UP0411x Series Characteristics charts of UP04116 IC  VCE Ta = 25°C −160 − 0.9 mA − 0.8 mA − 0.7 mA VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 hFE  IC VCE = −10 V 300 Ta = 75°C 25°C 200 −25°C IB = −1.0 mA Collector current IC (mA) − 0.6 mA − 0.5 mA − 0.4 mA −10 −120 −80 − 0.3 mA − 0.2 mA −1 Ta = 75°C − 0.1 25°C −25°C Forward current transfer ratio hFE 100 −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 − 0.01 −1 −10 −100 −1 000 0 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 f = 1 MHz Ta = 25°C −100 IO  VIN V O = −5 V Ta = 25°C −100 VIN  IO VO = − 0.2 V Ta = 25°C Output current IO (mA) 100 10 −10 Input voltage VIN (V) − 0.8 − 1.2 −1.6 −2.0 −2.4 −10 −1 1 − 0.1 0.1 0 − 10 −20 −30 −1 − 0.4 − 0.01 −1 −10 −100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00001BED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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