2SK1958

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 2.1 ±0.1 1.25 ±0.1 2.0 ±0.2 +0.1 0.3 –0 0.65 0.65 FEATURES • Gate can be driven by 1.5 V • Because of its high input impedance, there’s no need to consider drive current components required can be reduced • Since bias resistance can be omitted, the number of G S +0.1 +0.1 0.3 Marking 0.15 –0.05 0.9 ±0.1 0 to 0.1 Marking: G21 EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW ≤ 10 ms, duty cycle ≤ 50 % VGS = 0 VDS = 0 TEST CONDITIONS RATING 16 ± 7.0 ± 0.1 ± 0.2 150 150 –55 to +150 UNIT V V A A mW ˚C ˚C Document No. D11221EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 0.3 –0 D © 1996 2SK1958 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf VDD = 3 V, ID = 10 mA, VGS(on) = 3 V, RG = 10 Ω, RL = 300 Ω TEST CONDITIONS VDS = 16 V, VGS = 0 VGS = ± 7.0 V, VDS = 0 VDS = 3 V, ID = 10 µA VDS = 3 V, ID = 10 mA VGS = 1.5 V, ID = 1 mA VGS = 2.5 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VDS = 3 V, VGS = 0, f = 1.0 MHz 0.5 20 20 7 5 10 13 3 15 70 100 110 50 15 12 0.8 MIN. TYP. MAX. 1.0 ± 3.0 1.1 UNIT µA µA V mS Ω Ω Ω pF pF pF ns ns ns ns 2 2SK1958 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 50 2.0 V 80 ID - Drain Current - mA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE dT- Derating Factor - % 40 1.8 V 60 30 40 20 1.6 V 20 10 1.4 V VGS = 1.2 V 0 60 90 120 30 TA - Ambient Temperature - ˚C 150 0 1 2 3 4 VDS - Drain to Source Voltage - V 5 RDS(on) - Drain to Source On-State Resistance - Ω FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 500 |yfs| - Forward Transfer Admittance - mS DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = –25 ˚C 100 50 VGS = 1.5 V 20 10 2.5 V 5 0.5 1 2 5 4.0 V 10 20 50 100 200 500 VDS = 3 V 200 100 TA = –25 ˚C 25 ˚C 75 ˚C 50 20 10 5 10 20 50 100 ID - Drain Current - mA 200 ID - Drain Current - mA RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 25 ˚C 100 50 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 75 ˚C 100 50 VGS = 1.5 V 20 10 VGS = 1.5 V 20 10 5 2.5 V 4.0 V 2.5 V 5 0.5 1 2 5 4V 10 20 50 100 200 500 0.5 1 2 5 10 20 50 100 200 500 ID - Drain Current - mA ID - Drain Current - mA 3 2SK1958 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TOSOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-State Resistance - Ω 30 TA = – 25˚C RDS(on) - Drain to Source On-State Resistance - Ω 30 TA = 25 ˚C 20 ID = 10 mA 1 mA 20 ID = 10 mA 1 mA 10 10 0 1 5 6 2 3 4 VGS - Gate to Source Voltage - V 7 0 5 6 2 3 4 1 VGS - Gate to Source Voltage - V 7 RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 200 30 TA = 75 ˚C ISD - Diode Forward Current - mA 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 VSD - Source to Drain Voltage - V 1.0 20 ID = 10 mA 1 mA 10 0 5 6 2 3 4 1 VGS - Gate to Source Voltage - V 7 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50 td(on), tr, td(off), tf - Switching Time - ns Ciss, Crss, Coss, - Capacitance - pF SWITCHING CHARACTERISTICS 500 VDD = 3 V VGS(on) = 3 V tr 200 VGS = 0 f = 1 MHz 20 10 5 Ciss Coss 100 50 tf td(on) 20 td(off) 2 1 Crss 0.5 20 1 2 5 10 VDS - Drain to Source Voltage - V 50 10 20 50 100 200 ID - Drain Current - mA 500 4 2SK1958 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 2SK1958 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11