2SK3353-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3353 2SK3353-S 2SK3353-Z PACKAGE TO-220AB TO-262 TO-220SMD DESCRIPTION The 2SK3353 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: 5 5 RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4 V, ID = 41 A) • Built-in gate protection diode 5 • Low Ciss: Ciss = 4650 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS(AC) ID(DC) Note1 60 ±20 ±82 ±328 95 1.5 150 –55 to +150 45 202 V V A A W W °C °C A mJ 5 Drain Current (pulse) ID(pulse) PT PT Tch Tstg Note2 Note2 5 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 5 5 Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 5 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE 5 Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.32 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14130EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1999 2SK3353 5 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 82 A, VGS = 0 V IF = 82 A, VGS = 0 V, di/dt = 100 A/µs ID = 82 A , VDD = 48 V, VGS = 10 V ID = 41 A, VGS(on) = 10 V, VDD = 30 V, RG = 10 Ω TEST CONDITIONS VGS = 10 V, ID = 41 A VGS = 4 V, ID = 41 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 41 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, VGS = 0 V, f = 1 MHz 4650 780 380 100 1550 280 420 90 14 38 1.0 60 110 1.5 30 MIN. TYP. 7.5 10.5 2.0 50 10 ±10 MAX. 9.5 14 2.5 UNIT mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RG = 10 Ω VGS RL VDD ID 90 % 90 % ID VGS Wave Form 0 10 % VGS(on) 90 % BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 % ID Wave Form 0 10 % td(on) ton tr td(off) toff 10 % tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D14130EJ1V0DS00 2SK3353 PACKAGE DRAWING (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 3.0±0.3 10.6 MAX. 10.0 4.8 MAX. 1.0±0.5 φ 3.6±0.2 5.9 MIN. 1.3±0.2 (10) 4.8 MAX. 1.3±0.2 15.5 MAX. 4 4 123 1 2 3 6.0 MAX. 12.7 MIN. 1.3±0.2 1.3±0.2 12.7 MIN. 8.5±0.2 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 3) TO-220SMD (MP-25Z) (10) 4 4.8 MAX. 1.3±0.2 EQUIVALENT CIRCUIT Drain 1.0±0.5 8.5±0.2 Gate ) .5R 8R) 0. ( Body Diode 1.4±0.2 1.0±0.3 2.54 TYP. 1 2 11±0.4 3.0±0.5 (0 0.5±0.2 3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2.8±0.2 Data Sheet D14130EJ1V0DS00 3 2SK3353 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8