2SK4081

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4081 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 5 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4081-S15-AY Note Note Note Note LEAD PLATING PACKING Tube 70 p/tube PACKAGE TO-251 (MP-3-a) typ. 0.39 g TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g 2SK4081(1)-S27-AY 2SK4081-ZK-E1-AY 2SK4081-ZK-E2-AY Pure Sn (Tin) Tube 75 p/tube Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) 600 ±30 ±2.0 ±8.0 30 1.0 150 −55 to +150 1.4 117 V V A A W W °C °C A mJ (TO-252) VDSS VGSS ID(DC) ID(pulse) PT1 Note2 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 PT2 Tch Tstg IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18785EJ2V0DS00 (2nd edition) Date Published June 2007 NS Printed in Japan 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 2SK4081 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 1.0 A, VGS = 10 V, RG = 10 Ω MIN. TYP. MAX. 10 ±100 UNIT μA nA V S 2.5 0.35 3.0 3.5 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 4.2 230 95 11 11 7 13 13.5 5 Ω pF pF pF ns ns ns ns nC nC nC VDD = 450 V, VGS = 10 V, ID = 2.0 A IF = 2.0 A, VGS = 0 V IF = 2.0 A, VGS = 0 V, di/dt = 100 A/μs 7.2 2.9 3.0 0.87 175 550 1.5 VF(S-D) trr Qrr V ns nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS VGS 0 τ Starting Tch τ = 1 μs Duty Cycle ≤ 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME L VDD PG. D.U.T. RL VGS VGS RG Wave Form 50 Ω 0 10% VGS 90% VDD VDS 90% 90% 10% 10% IAS ID VDD VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 Ω RL VDD PG. 2 Data Sheet D18785EJ2V0DS 2SK4081 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 35 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 30 25 20 15 10 5 0 0 25 50 75 100 125 150 Tch - Channel Temperature - °C TC - Case Temperature - °C DRAIN CURRENT vs. CASE TEMPERATURE 2.5 FORWARD BIAS SAFE OPERATING AREA 100 10 ID - Drain Current - A ID(pulse) ID(DC) 1i PW =1 i 1 0.1 0.01 R (o DS n) ID - Drain Current - A 00 2 μs (V GS d it e Lim V ) i0 =1 1.5 1 0.5 0 m i s 1i 0 w Po D er is p si io at n m i s d it e m Li TC = 25°C Single Pulse 0.001 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V 0 25 50 75 100 125 150 TC - Case Temperature - °C TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W Rth(ch-A) = 125°C/Wi 100 10 Rth(ch-C) = 4.167°C/Wi 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18785EJ2V0DS 3 2SK4081 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 6 5 ID - Drain Current - A 10 VDS = 10 V Pulsed VGS = 20 V 10 V ID - Drain Current - A 4 3 2 1 1 Tch = −55°C −40°C −25°C 25°C 75°C 125°C 150°C 0 4 8 12 16 20 0.1 Pulsed 0 0 5 10 15 20 25 30 35 VDS - Drain to Source Voltage - V 0.01 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S 6 5 4 3 2 1 0 -75 -25 25 75 125 175 VDS = 10 V ID = 1 m A 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed 1 25°C 75°C 125°C 150°C Tch = −55°C −40°C −25°C 0.1 0.01 0.01 0.1 1 10 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω 12 10 8 6 4 2 Pulsed 0 0 5 10 15 20 VGS - Gate to Source Voltage - V 12 10 8 6 VGS = 10 V 4 20 V 2 Pulsed 0 0.01 0.1 1 10 ID = 2.0 A 1.0 A ID - Drain Current - A 4 Data Sheet D18785EJ2V0DS 2SK4081 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - Ω CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 12 10 8 6 1.0 A 4 2 0 -75 -25 25 75 125 175 Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 10000 VGS = 10 V Pulsed ID = 2.0 A 1000 Ciss 100 10 1 0.1 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V Coss Crss VGS = 0 V f = 1 MHz SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 600 12 VDD = 450 V 300 V 150 V VGS 300 200 100 0 VDS ID = 2.0 A 0 0 1 2 3 4 5 6 7 8 6 4 2 10 8 1000 td(on), tr, td(off), tf - Switching Time - ns VDS - Drain to Source Voltage - V 500 400 100 tf td(off) td(on) 10 tr 1 0.1 1 ID - Drain Current - A 10 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 IF - Diode Forward Current - A trr - Reverse Recovery Time - ns 1000 10 VGS = 10 V 1 100 0.1 0V Pulsed 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V di/dt = 100 A/μs VGS = 0 V 10 0.1 1 IF - Diode Forward Current - A 10 Data Sheet D18785EJ2V0DS 5 VGS - Gate to Source Voltage - V VDD = 150 V VGS = 10 V RG = 10 Ω 2SK4081 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 10 IAS - Single Avalanche Current - A Energy Derating Factor - % 120 100 80 60 40 20 0 0.1 1 10 100 1000 25 50 75 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 1.4 A IAS = 1.4 A 1 VDD = 150 V R G = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 0.1 0.01 EAS = 117 mJ 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - °C 6 Data Sheet D18785EJ2V0DS 2SK4081 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3-a) Mold Area 2) TO-251 (MP-3-b) 0.7 TYP. 2.3 ±0.1 0.5 ±0.1 1.06 TYP. 6.6 ±0.2 5.3 TYP. 4.3 MIN. 6.6±0.2 5.3 TYP. 2.3±0.1 0.5±0.1 4 4.0 MIN. 6.1 ±0.2 4 6.1±0.2 1 9.3 TYP. No Plating 1 2 3 1.8 ±0.2 2 3 11.25 TYP. 16.1 TYP. 1.14 MAX. 1.14 MAX. 0.76±0.12 0.76 ±0.1 2.3 TYP. 2.3 TYP. 0.5 ±0.1 1.1±0.13 0.5±0.1 2.3 TYP. 2.3 TYP. 1.04 TYP. 1.02 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-252 (MP-3ZK) 1.0 TYP. EQUIVALENT CIRCUIT 2.3±0.1 0.5±0.1 No Plating 6.5±0.2 5.1 TYP. 4.3 MIN. 4 Drain 6.1±0.2 10.4 MAX. (9.8 TYP.) Gate Body Diode 4.0 MIN. 0.51 MIN. Source 1 0.8 2 3 No Plating 0 to 0.25 0.5±0.1 1.0 1.14 MAX. 2.3 2.3 0.76±0.12 1. Gate 2. Drain 3. Source 4. Fin (Drain) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 4.13 TYP. Data Sheet D18785EJ2V0DS 7 2SK4081 • T he information in this document is current as of June, 2007. The information is subject to change without notice. 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