NE662M16-T3

NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications. The NE662M16 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. M16 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 5 mA Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT Output Power at 1 dB compression point at VCE = 2 V, IC = 20 mA, f = 2 GHz Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF GHz dB dB dB dBm 14 UNITS nA nA 50 20 70 25 20 17 1.1 11 22 0.14 0.24 1.5 MIN NE662M16 2SC5704 M16 TYP MAX 200 200 100 DC IEBO hFE fT MSG |S21E|2 NF P1dB IP3 Cre Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MSG = S21 S12 RF NE662M16 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 15 3.3 1.5 35 115 1 1.0±0.05 0.8+0.07 -0.05 0.15±0.05 0.125+0.1 -0.05 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M16 150 0.4 1.2+0.07 -0.05 2 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 0.8 0.4 3 ORDERING INFORMATION PART NUMBER NE662M16-T3 QUANTITY 10 kpcs/reel PACKAGING Pin 1 (Collector), Pin 6 (Emitter) face the perforation side on the tape. PIN CONNECTIONS 1. Collector 4. Base 2. Emitter 5. Emitter 3. Emitter 6. Emitter 0.5±0.05 4 5 -65 to +150 6 zC NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation, Ptot (mW) 250 200 150 115 100 50 Mounted on Glass Epoxy Board (1.08 cm2 × 1.0 mm (t) ) Reverse Transfer Capacitance, Cre (pF) 300 0.20 f = 1 MHz 0.16 0.12 0.08 0.04 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature, TA (°C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 35 VCE = 2 V 30 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 35 500 µA 450 µA 400 µA 350 µA 300 µA 250 µA 200 µA 150 µA 100 µA 1 2 IB = 50 µA 4 3 Collector Current, Ic (mA) Collector Current, Ic (mA) 0.2 0.4 0.6 0.8 1.0 25 20 15 10 5 30 25 20 15 10 5 0 0 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 2 V GAIN BANDWIDTH vs. COLLECTOR CURRENT 30 VCE = 2 V f = 2 GHz Gain Bandwdth, fT (GHz) 1 10 100 25 20 15 10 5 DC Current Gain, hFE 100 10 0.1 0 1 10 100 Collector Current, lC (mA) Collector Current, IC (mA) NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN vs. FREQUENCY 35 VCE = 1 V IC = 20 mA INSERTION POWER GAIN vs. FREQUENCY 35 VCE = 2 V IC = 20 mA Insertion Power Gain, IS21eI2 25 20 15 10 5 0 0.1 Insertion Power Gain, IS21eI2 30 30 25 20 15 10 5 0 0.1 1 10 1 10 Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) MSG Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) VCE = 2 V f = 1 GHz VCE = 2 V f = 2 GHz 25 20 15 10 5 0 1 |S21e|2 25 MSG 20 15 10 5 0 1 |S21e|2 MAG 10 100 10 100 Collector Current, IC (mA) Collector Current, IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 30 VCE = 2 V, f = 1 GHz Icq = 20 mA (RF OFF) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 30 VCE = 2 V, f = 2 GHz Icq = 20 mA (RF OFF) 50 Output Power, Pout (dBm) Output Power, Pout (dBm) Collector Current, Ic (mA) 20 40 20 40 Pout 10 30 10 Pout 30 0 IC 20 0 IC 20 -10 -25 -15 5 10 5 -10 -25 -15 5 10 5 Input Power, Pin (dBm) Input Power, Pin (dBm) Collector Current, Ic (mA) NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 VCE = 1 V f = 1 GHz 5 30 25 6 VCE = 2 V f = 1 GHz 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 25 20 15 10 NF 5 0 100 Noise Figure, NF (dB) Noise Figure, NF (dB) Ga Ga 4 3 2 NF 1 0 1 20 15 10 5 0 100 4 3 2 1 0 1 10 10 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 VCE = 1 V f = 1.5 GHz 5 25 5 30 6 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 VCE = 2 V f = 1.5 GHz 25 Ga 4 3 2 NF 1 0 1 5 0 100 20 15 10 Noise Figure, NF (dB) 4 3 2 Ga 20 15 10 NF 1 0 1 5 0 100 10 Noise Figure, NF (dB) 10 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 VCE = 1 V f = 2 GHz 5 25 20 Ga 3 2 NF 1 0 1 5 0 100 15 10 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 6 VCE = 2 V f = 2 GHz 25 20 15 10 NF 5 0 100 30 Noise Figure, NF (dB) 4 Noise Figure, NF (dB) 4 3 2 1 0 1 Ga 10 10 Collector Current, IC (mA) Collector Current, IC (mA) NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +90º +135º +45º j10 0 10 S21 S22 -j10 25 50 100 5 +180º S21 10 +0º -135º -j25 -j50 -j100 -45º -90º NE662M16 VC = 2 V, IC = 5 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 MAG 0.79 0.79 0.78 0.76 0.74 0.73 0.71 0.69 0.68 0.66 0.65 0.64 0.64 0.63 0.62 0.61 0.60 0.60 0.59 0.58 0.58 0.57 0.57 0.56 0.56 0.55 0.55 0.54 0.54 0.53 0.52 0.52 0.52 0.52 0.51 0.51 0.51 0.51 0.51 0.51 S11 ANG -8.34 -20.52 -30.77 -39.87 -48.66 -56.79 -64.12 -71.30 -77.50 -83.36 -88.67 -93.70 -98.23 -102.48 -106.53 -110.24 -113.97 -117.60 -120.80 -124.09 -127.67 -130.76 -133.98 -136.85 -139.86 -142.72 -145.66 -148.25 -151.04 -153.76 -156.67 -159.41 -162.03 -164.80 -167.55 -170.15 -172.65 -174.91 -177.27 -179.59 MAG 13.52 13.20 12.77 12.28 11.75 11.15 10.59 10.02 9.48 8.98 8.55 8.15 7.79 7.45 7.14 6.82 6.57 6.36 6.11 5.86 5.69 5.51 5.37 5.16 5.03 4.88 4.75 4.58 4.46 4.35 4.21 4.09 4.00 3.89 3.78 3.68 3.61 3.51 3.40 3.31 S21 ANG 171.32 165.06 158.29 152.12 146.29 140.96 136.12 131.99 128.20 124.77 121.61 118.55 115.75 113.15 110.70 108.22 105.79 103.81 102.01 99.85 97.73 95.62 94.20 92.25 90.06 88.26 86.62 84.94 82.99 81.42 79.85 78.16 76.53 75.17 73.64 71.91 70.42 69.29 67.93 66.28 MAG 0.01 0.02 0.02 0.03 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 S12 ANG 84.69 78.92 73.38 68.92 64.34 60.23 56.71 53.36 50.48 47.89 45.67 43.73 42.02 40.50 39.06 37.77 36.69 35.72 34.87 34.09 33.33 32.59 32.26 31.81 31.21 30.84 30.55 30.18 30.00 29.61 29.45 29.21 28.97 28.78 28.67 28.50 28.28 28.15 28.08 27.96 MAG 0.98 0.96 0.93 0.90 0.87 0.83 0.79 0.76 0.72 0.69 0.66 0.64 0.61 0.59 0.57 0.55 0.53 0.51 0.50 0.48 0.47 0.46 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.36 0.35 0.34 0.33 0.32 0.32 0.31 0.30 0.29 S22 ANG -5.81 -11.66 -16.99 -21.91 -26.38 -30.37 -33.94 -37.10 -39.91 -42.40 -44.60 -46.56 -48.38 -49.89 -51.38 -52.58 -53.71 -54.81 -55.74 -56.51 -57.44 -57.89 -58.61 -59.18 -59.83 -60.32 -60.89 -61.28 -61.71 -62.28 -62.64 -63.08 -63.54 -64.05 -64.59 -65.11 -65.78 -66.41 -67.07 -67.74 0.13 0.09 0.11 0.14 0.17 0.20 0.24 0.26 0.29 0.32 0.35 0.38 0.40 0.43 0.46 0.49 0.52 0.55 0.58 0.61 0.64 0.66 0.68 0.71 0.74 0.77 0.80 0.83 0.87 0.90 0.93 0.96 0.99 1.02 1.05 1.07 1.09 1.12 1.16 1.19 K MAG1 (dB) 32.18 29.17 27.36 26.09 25.11 24.28 23.60 22.99 22.47 21.99 21.59 21.22 20.88 20.57 20.28 19.99 19.74 19.54 19.31 19.06 18.89 18.68 18.53 18.31 18.17 17.98 17.83 17.63 17.50 17.34 17.17 17.02 16.88 15.94 15.28 14.77 14.44 14.02 13.59 13.22 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j10 0 25 10 S11 50 S22 -j10 100 j100 +90º +135º +45º 5 10 15 20 +180º S21 +0º -j25 -j50 -j100 -135º -90º -45º NE662M16 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 MAG 0.66 0.66 0.65 0.63 0.61 0.60 0.58 0.57 0.56 0.55 0.55 0.54 0.54 0.53 0.53 0.52 0.52 0.52 0.51 0.51 0.51 0.50 0.50 0.50 0.50 0.49 0.49 0.49 0.48 0.48 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 S11 ANG -12.81 -28.48 -41.93 -53.87 -64.70 -74.41 -82.86 -90.61 -97.18 -103.22 -108.53 -113.37 -117.69 -121.63 -125.35 -128.85 -132.25 -135.50 -138.46 -141.58 -144.72 -147.54 -150.41 -153.04 -155.65 -158.30 -160.91 -163.29 -165.82 -168.40 -171.02 -173.52 -175.90 -178.39 179.16 176.86 174.73 172.77 170.80 168.82 MAG 21.08 20.34 19.32 18.18 16.97 15.75 14.65 13.62 12.70 11.88 11.17 10.51 9.95 9.43 8.96 8.50 8.13 7.82 7.48 7.14 6.89 6.66 6.44 6.17 5.98 5.80 5.61 5.40 5.24 5.09 4.93 4.78 4.66 4.53 4.39 4.27 4.18 4.06 3.93 3.83 S21 ANG 170.08 161.46 153.18 145.93 139.38 133.63 128.64 124.38 120.59 117.23 114.18 111.31 108.65 106.24 103.96 101.70 99.47 97.63 96.05 94.06 92.12 90.21 88.94 87.15 85.19 83.57 82.16 80.62 78.93 77.50 76.12 74.60 73.12 71.93 70.55 69.00 67.66 66.70 65.49 63.99 MAG 0.01 0.01 0.02 0.03 0.03 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 S12 ANG 81.45 76.90 70.56 65.20 60.63 56.67 53.54 50.71 48.39 46.60 45.17 43.92 42.92 42.14 41.39 40.83 40.51 40.23 39.88 39.77 39.58 39.38 39.49 39.53 39.40 39.29 39.33 39.31 39.52 39.41 39.56 39.47 39.46 39.49 39.50 39.45 39.36 39.24 39.22 39.15 MAG 0.96 0.94 0.90 0.85 0.80 0.75 0.70 0.66 0.62 0.58 0.55 0.52 0.50 0.47 0.45 0.43 0.42 0.40 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.27 0.26 0.25 0.24 0.24 0.23 0.22 0.22 0.21 0.20 S22 ANG -7.79 -15.60 -22.67 -28.92 -34.46 -39.19 -43.27 -46.77 -49.77 -52.36 -54.59 -56.54 -58.27 -59.73 -61.06 -62.21 -63.19 -64.16 -64.99 -65.63 -66.43 -66.83 -67.39 -67.86 -68.39 -68.81 -69.31 -69.61 -70.04 -70.48 -70.87 -71.30 -71.76 -72.30 -72.89 -73.50 -74.30 -75.12 -75.94 -76.91 K 0.19 0.13 0.16 0.20 0.24 0.28 0.33 0.37 0.41 0.45 0.49 0.52 0.56 0.59 0.63 0.66 0.70 0.73 0.76 0.80 0.82 0.84 0.87 0.90 0.93 0.95 0.98 1.01 1.04 1.06 1.09 1.11 1.13 1.15 1.17 1.19 1.21 1.23 1.25 1.27 MAG1 (dB) 34.48 31.43 29.60 28.32 27.29 26.47 25.76 25.14 24.59 24.11 23.68 23.28 22.91 22.57 22.24 21.92 21.65 21.39 21.12 20.83 20.62 20.38 20.17 19.91 19.72 19.50 19.29 18.53 17.69 17.14 16.67 16.22 15.88 15.52 15.17 14.85 14.60 14.28 13.93 13.64 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +135º +45º +90º j10 0 10 S11 S22 -j10 -135º -45º 25 50 100 +180º S11 5 10 15 20 25 +0º -j25 -j50 -j100 -90º NE662M16 VC = 2 V, IC = 20 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 MAG 0.51 0.51 0.51 0.51 0.50 0.50 0.49 0.49 0.49 0.49 0.48 0.48 0.48 0.48 0.48 0.48 0.48 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.46 0.46 0.46 0.46 0.45 0.45 0.45 0.45 0.45 0.45 0.46 0.46 0.46 0.46 0.46 S11 ANG -19.24 -39.58 -56.67 -71.47 -83.85 -94.44 -103.20 -110.77 -117.07 -122.58 -127.34 -131.56 -135.30 -138.62 -141.83 -144.87 -147.80 -150.55 -153.08 -155.81 -158.52 -161.02 -163.41 -165.69 -167.97 -170.37 -172.58 -174.73 -177.01 -179.36 178.28 176.08 173.87 171.68 169.53 167.47 165.67 163.96 162.28 160.56 MAG 28.64 27.18 25.27 23.19 21.13 19.22 17.57 16.11 14.85 13.76 12.83 11.98 11.27 10.62 10.04 9.49 9.04 8.66 8.25 7.86 7.56 7.29 7.03 6.72 6.50 6.29 6.07 5.84 5.65 5.49 5.31 5.14 5.00 4.86 4.71 4.58 4.47 4.34 4.21 4.09 S21 ANG 168.38 157.71 148.17 140.08 133.18 127.33 122.40 118.27 114.65 111.47 108.63 105.97 103.49 101.28 99.19 97.12 95.06 93.37 91.95 90.10 88.29 86.54 85.38 83.75 81.93 80.42 79.19 77.76 76.22 74.88 73.63 72.22 70.83 69.75 68.47 67.03 65.80 64.93 63.80 62.37 MAG 0.01 0.01 0.02 0.02 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 S12 ANG 79.10 74.03 67.79 62.44 58.17 54.93 52.50 50.56 49.13 48.10 47.35 46.96 46.65 46.44 46.48 46.28 46.44 46.55 46.81 46.88 46.96 47.15 47.44 47.56 47.55 47.65 47.79 47.81 47.96 47.89 48.00 47.97 47.81 47.81 47.78 47.68 47.46 47.30 47.24 46.96 MAG 0.94 0.90 0.85 0.79 0.72 0.66 0.61 0.56 0.52 0.49 0.46 0.43 0.41 0.39 0.37 0.35 0.33 0.32 0.31 0.29 0.28 0.27 0.26 0.26 0.25 0.24 0.23 0.22 0.21 0.21 0.20 0.19 0.19 0.18 0.18 0.17 0.16 0.16 0.15 0.15 S22 ANG -9.68 -19.55 -28.23 -35.68 -41.91 -47.08 -51.40 -55.03 -58.07 -60.66 -62.85 -64.73 -66.43 -67.82 -69.05 -70.13 -71.09 -71.97 -72.73 -73.33 -74.04 -74.48 -74.96 -75.41 -75.93 -76.35 -76.85 -77.18 -77.67 -78.08 -78.62 -79.11 -79.69 -80.42 -81.20 -82.06 -83.19 -84.30 -85.66 -87.01 0.26 0.20 0.23 0.28 0.33 0.39 0.44 0.49 0.54 0.59 0.64 0.68 0.72 0.75 0.79 0.83 0.86 0.89 0.92 0.95 0.97 0.99 1.01 1.04 1.06 1.07 1.09 1.12 1.14 1.16 1.17 1.19 1.20 1.22 1.23 1.24 1.25 1.27 1.29 1.30 K MAG1 (dB) 36.13 33.13 31.27 29.98 28.93 28.06 27.33 26.69 26.11 25.60 25.12 24.67 24.27 23.88 23.50 23.14 22.81 22.51 22.19 21.87 21.60 21.33 20.46 19.60 19.05 18.61 18.15 17.64 17.23 16.88 16.51 16.16 15.87 15.56 15.26 14.97 14.74 14.44 14.12 13.86 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain 3-46 NE662M16 NE662M16 NONLINEAR MODEL SCHEMATIC LBX Base LB CCE CCB LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 1.6e-16 105 1.02 23 0.38 1e-6 30 12 1.02 2.5 0.1 3e-15 1.28 1.1 6 3.5 1.3e-3 8.75 0.4e-12 0.6 0.5 0.1e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.3 0.1 0 0.75 0 0.6 2e-12 0.2 0.2 0.03 0 1e-11 1.11 0 3 0 1 MODEL RANGE Frequency: 0.1 to 4 GHz Bias: VCE = 0.5 V to 3 V, IC = 1 mA to 30 mA Date: 01/15/2002 ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCEPKG CBEPK LBX LCX LEX NE662M16 0.07e-12 0.09e-12 0.4e-9 0.14e-9 0.12e-12 0.1e-12 0.1e-9 0.6e-9 0.04e-9 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 01/22/2002