RD20M

DATA SHEET ZENER DIODES RD2.0M to RD47M ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION Type RD2.0M to RD47M Series are planar type zener diodes processing an allowable power dissipation of 200 mW. 0.4 +0.1 –0.05 PACKAGE DIMENSIONS (Unit: mm) 2.8 ± 0.2 1.5 0.65 +0.1 –0.15 FEATURES • • Planar process VZ; Applied E24 standard. 0.95 0.95 APPLICATIONS Circuits for, Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc. 2.9 ± 0.2 2 3 Marking Power Dissipation Forward Current Junction Temperature Storage Temperature Peak Reverse Power P IF Tj Tstg PRSM 200 mW 150 mA 150°C –55 to +150°C 100 W (t = 10 µs) 1.1 to 1.4 1 . NC 2 . Anode : A SC-59 (EIAJ) 3 . Cathode: K A 2 0 to 0.1 0.16 –0.06 K 3 MAXIMUM RATINGS (TA = 25°C) 0.3 1 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14716EJ6V0DS00 (6th edition) (Previous No. DC-2141) Date Published June 2000 N CP(K) Printed in Japan © +0.1 +0.1 1 0.4 –0.05 1995 RD2.0M to RD47M ELECTRICAL CHARACTERISTICS (TA = 25 ± 2°C) Type Number RD2.0M RD2.2M RD2.4M RD2.7M Class B B B B B1 B2 B B1 B2 B B1 B2 B B1 B2 B B1 B2 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 MIN. 1.90 2.10 2.30 2.50 2.50 2.65 2.80 2.80 2.95 3.10 3.10 3.25 3.40 3.40 3.55 3.70 3.70 3.87 4.01 4.01 4.15 4.28 4.42 4.42 4.55 4.69 4.84 4.84 4.98 5.14 5.31 5.31 5.49 5.67 5.86 5.86 6.06 6.26 6.47 6.47 6.65 6.86 7.06 7.06 7.28 7.52 7.76 7.76 8.02 8.28 Zener Voltage VZ (V)Note 1 MAX. IZ 2.20 2.40 2.60 2.90 2.75 2.90 3.20 3.05 3.20 3.50 3.35 3.50 3.80 3.65 3.80 4.10 3.97 4.10 4.48 4.21 4.34 4.48 4.90 4.61 4.75 4.90 5.37 5.04 5.20 5.37 5.92 5.55 5.73 5.92 6.53 6.12 6.33 6.53 7.14 6.73 6.93 7.14 7.84 7.36 7.60 7.84 8.64 8.10 8.36 8.64 Dynamic Impedance ZZ (Ω)Note 2 MAX. IZ (mA) 100 5 100 5 100 5 110 5 Reverse Current IR (µA) MAX. VR (V) 120 0.5 120 0.7 120 1.0 120 1.0 (mA) 5 5 5 5 RD3.0M 5 120 5 50 1.0 RD3.3M 5 130 5 20 1.0 RD3.6M 5 130 5 10 1.0 RD3.9M 5 130 5 10 1.0 RD4.3M 5 130 5 10 1.0 RD4.7M 5 130 5 10 1.0 RD5.1M 5 130 5 5 1.5 RD5.6M 5 80 5 5 2.5 RD6.2M 5 50 5 2 3.0 RD6.8M 5 30 5 2 3.5 RD7.5M 5 30 5 2 4.0 RD8.2M 5 30 5 2 5.0 2 Data Sheet D14716EJ6V0DS00 RD2.0M to RD47M Zener Voltage VZ (V)Note 1 MIN. 8.56 8.56 8.85 9.15 9.45 9.45 9.77 10.11 10.44 10.44 10.76 11.10 11.42 11.42 11.74 12.08 12.47 12.47 12.91 13.37 13.84 13.84 14.34 14.85 15.37 15.37 15.85 16.35 16.94 16.94 17.56 18.21 18.86 18.86 19.52 20.21 20.88 20.88 21.54 22.23 22.93 22.93 23.72 24.54 25.10 28.00 31.00 34.00 37.00 40.0 44.0 MAX. 9.55 8.93 9.23 9.55 10.55 9.87 10.21 10.55 11.56 10.88 11.22 11.56 12.60 11.90 12.24 12.60 13.96 13.03 13.49 13.96 15.52 14.46 14.98 15.52 17.09 16.01 16.51 17.09 19.03 17.70 18.35 19.03 21.08 19.70 20.39 21.08 23.17 21.77 22.47 23.17 25.57 23.96 24.78 25.57 28.90 32.00 35.00 38.00 41.00 45.0 49.0 IZ (mA) 5 Dynamic Impedance ZZ (Ω)Note 2 MAX. 30 IZ (mA) 5 Reverse Current IR (µA) MAX. 2 VR (V) 6.0 Type Number Class B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B B B B B B RD9.1M RD10M 5 30 5 2 7.0 RD11M 5 30 5 2 8.0 RD12M 5 35 5 2 9.0 RD13M 5 35 5 2 10 RD15M 5 40 5 2 11 RD16M 5 40 5 2 12 RD18M 5 45 5 2 13 RD20M 5 50 5 2 15 RD22M 5 55 5 2 17 RD24M RD27M RD30M RD33M RD36M RD39M RD43M RD47M 5 2 2 2 2 2 2 2 60 70 80 80 90 100 130 150 5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 19 21 23 25 27 30 33 36 Note 1. Tested with pulse (40 ms). 2. ZZ is measured at IZ by given a very small A.C. current signal. Data Sheet D14716EJ6V0DS00 3 RD2.0M to RD47M TYPICAL CHARACTERISTICS (TA = 25°C) Fig. 1 P–TA RATING 250 P - Power Dissipation - mW 200 150 100 50 0 25 50 75 100 125 TA - Ambient Temperature - °C 150 Fig. 2 IZ – VZ CHARACTERISTICS (a to e) 100 m 10 m IZ - Zener Current - A 1m 100 µ 10 µ 1µ 100 n 10 n 1n 0 RD2.0M RD2.2M RD2.4M RD2.7M RD3.0M RD3.3M RD5.6M RD6.2M RD8.2M RD9.1M 100 m 10 m IZ - Zener Current - A 1m 100 µ 10 µ 1µ 100 n RD10M RD11M RD12M RD13M RD3.3M RD3.6M RD5.1M RD4.7M RD4.3M 10 n RD6.8M RD7.5M 1n 9 10 0 7 8 9 10 11 12 13 VZ - Zener Voltage - V (b) 14 15 1 2 3 4 5 6 7 VZ - Zener Voltage - V (a) 8 100 m 10 m IZ - Zener Current - A 1m 100 µ 10 µ 1µ 100 n 10 n 1n 11 12 13 RD15M RD16M RD18M RD20M IZ - Zener Current - A 100 m 10 m 1m 100 µ 10 µ 1µ 100 n 10 n 1n RD22M RD24M RD27M RD30M 14 15 16 17 18 VZ - Zener Voltage - V (c) 19 20 0 15 20 22 24 25 VZ - Zener Voltage - V (d) 28 30 4 Data Sheet D14716EJ6V0DS00 RD2.0M to RD47M 100 m RD32M RD36M RD43M IZ - Zener Current - A 10 m 1m 100 µ 10 µ 1µ 100 n 10 n 1n 0 15 30 RD39M RD47M 35 40 VZ - Zener Voltage - V (e) Fig. 3 γZ - VZ CHARACTERISTICS 1000 Fig. 4 ZZ - IZ CHARACTERISTICS 0.1 0.08 0.06 0.04 0.02 0 –0.02 –0.04 –0.06 4 %/°C 40 32 24 16 mV/°C 8 0 –8 –16 –24 γZ - VZ Temperature Coefficient - mV/°C γZ - VZ Temperature Coefficient - %/°C TYP. TYP. ZZ - Zener Impedance - Ω RD5.6M RD39M 100 RD24M RD20M RD2.0M RD2.4M RD3.0M RD3.9M RD4.7M RD5.1M RD15M 10 RD10M RD7.5M 1 0.1 1 10 IZ - Zener Current - mA 100 8 12 16 20 24 28 32 36 40 44 VZ - Zener Voltage - V Data Sheet D14716EJ6V0DS00 5 RD2.0M to RD47M Fig. 5 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1000 625°C/W Zth – Transient Thermal Impedance – °C/W 100 10 1 0.1 1m 10 m 100 m 1 t – Time – s 10 100 FIG. 6 SURGE REVERSE POWER RATINGS 10000 PRSM TA = 25°C Repetitive tT PRSM – Surge Reverse Power – W 1000 100 10 1 1µ 10 µ 100 µ 1m t – Pulse Width – s 10 m 100 m 6 Data Sheet D14716EJ6V0DS00 RD2.0M to RD47M [MEMO] Data Sheet D14716EJ6V0DS00 7 RD2.0M to RD47M [MEMO] • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. 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