UPA1856GR-9JG

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5° –3 FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 48 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 72 mΩ MAX. (VGS = –2.7 V, ID = –2.5 A) RDS(on)4 = 77 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 0.8 MAX. µPA1856GR-9JG 0.1 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT –20 ±12 ±4.5 ±18 2.0 150 V V A A W °C °C Gate1 Gate Protection Diode Source1 Drain1 Drain2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode Gate2 Gate Protection Diode Source2 Body Diode Total Power Dissipation Channel Temperature Storage Temperature –55 to +150 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13808EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1998, 1999 µ PA1856 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = –20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = –10 V, ID = –1 mA VDS = –10 V, ID = –2.5 A VGS = –4.5 V, ID = –2.5 A VGS = –4.0 V, ID = –2.5 A VGS = –2.7 V, ID = –2.5 A VGS = –2.5 V, ID = –2.5 A VDS = –10 V VGS = 0 V f = 1 MHz VDD = –10 V ID = –2.5 A VGS(on) = –4.0 V RG = 10 Ω VDS = –16 V ID = –4.5 A VGS = –4.0 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 10 A / µs –0.5 3 –1.1 8.8 37 39 52 57 700 208 100 300 528 242 698 6.0 2.1 2.8 0.86 32 2.2 45 48 72 77 MIN. TYP. MAX. –10 ±10 –1.5 UNIT µA µA V S mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC • • Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD ID ( − ) VGS (−) 0 τ τ = 1 µs Duty Cycle ≤ 1 % ID Wave Form VGS (−) VGS Wave Form IG = −2 mA VGS(on) 90 % RL VDD 0 10 % PG. 90 % 90 % 50 Ω ID 0 10 % 10 % td(on) ton tr td(off) toff tf 2 Data Sheet D13808EJ2V0DS00 µ PA1856 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 • −100 FORWARD BIAS SAFE OPERATING AREA dT - Derating Factor - % ID - Drain Current - A −10 V (@ )L 4 on = − S( RD GS d ite V) im .5 ID (pulse) PW PW PW =1 0 =1 ID (DC) ms 60 −1 ms =1 00 ms DC 40 20 −0.1 TA = 25 ˚C Single Pulse Mounted on Ceramic Substrate of 5000 mm2x 1.1 mm PD(FET1) : PD(FET2) = 1:1 0 30 60 90 120 TA - Ambient Temperature - ˚C 150 −0.01 −0.1 −10 −1 VDS - Drain to Source Voltage - V −100 • −20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = −10 V −4.5 V −4.0 V ID - Drain Current - A TRANSFER CHARACTERISTICS −100 −10 −1 −0.1 −0.01 −0.001 TA = 125˚C 75˚C 25˚C −25˚C VDS = −10 V ID - Drain Current - A −16 −12 −2.5 V −8 −4 −0.0001 −0.00001 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 0 0.0 −0.2 −0.4 −0.6 −0.8 −1.0 VDS - Drain to Source Voltage - V VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100 | yfs | - Forward Transfer Admittance - S • VGS(off) - Gate to Source Cut-off Voltage - V −1.5 VDS = −10 V ID = −1 mA GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = −10V 10 TA = −25˚C 25˚C 75˚C 125˚C −1.0 1 0.1 −0.5 −50 0 50 100 150 0.01 −0.01 −0.1 −1 ID - Drain Current - A −10 −100 Tch - Channel Temperature - ˚C Data Sheet D13808EJ2V0DS00 3 µ PA1856 RDS(on) - Drain to Source On-State Resistance - mΩ 100 RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −2.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −2.7 V 80 TA = 125˚C 80 TA = 125˚C 75˚C 60 25˚C 60 75˚C 25˚C −25˚C 40 −0.01 −0.1 −1 −10 −100 −25˚C 40 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 VGS = −4.0 V ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = −4.5 V TA = 125˚C RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ 60 TA = 125˚C 50 75˚C 50 TA = 75˚C 40 25˚C 40 TA = 25˚C TA = −25˚C 30 −25˚C 30 −0.01 −0.1 −1 −10 −100 20 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A ID - Drain Current - A RDS (on) - Drain to Source On-state Resistance - mΩ 100 RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = −2.5 A VGS = −2.5 V −2.7 V 60 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 ID = −2.5 A 80 100 80 −4.0 V −4.5 V 60 40 40 20 0 20 −50 Tch 0 50 100 - Channel Temperature -˚C 150 −2 −4 −6 −8 −10 −12 VGS - Gate to Source Voltage - V 4 Data Sheet D13808EJ2V0DS00 µ PA1856 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 10000 td(on), tr, td(off), tf - Switchig Time - ns Ciss, Coss, Crss - Capacitance - pF f = 1 MHz VGS = 0V 1000 Ciss 1000 tf tr td(on) td(off) 100 VDD = −10 V VGS(on) = −4.0 V RG = 10 Ω −1 ID - Drain Current - A −10 100 Coss Crss 10 −0.1 −1 −10 −100 10 −0.1 VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT CHARACTERISTICS −8 IF - Source to Drain Current - A VGS - Gate to Source Voltage - V 100 ID = −4.5 A VDD = −16 V −10 V 10 −6 1 −4 0.1 −2 0.01 0.4 0 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VF(S-D) - Source to Drain Voltage - V QG - Gate Charge - nC • 1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 100 62.5˚C/W 10 1 Mounted on ceramic substrate of 5000 mm2 x 1.1 mm Single Pulse PD(FET1) : PD(FET2) = 1:1 0.1 1m 10m 100m 1 10 100 1000 PW - Pulse Width - S Data Sheet D13808EJ2V0DS00 5 µ PA1856 [MEMO] 6 Data Sheet D13808EJ2V0DS00 µ PA1856 [MEMO] Data Sheet D13808EJ2V0DS00 7 µ PA1856 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • D escriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8