UPA1874

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1874 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1874 is a switching device which can be driven directly by a 2.5-V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5° –3 FEATURES • 2.5-V drive available • Low on-state resistance RDS(on)1 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 14.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 16.5 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 19.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) • Built-in G-S protection diode against ESD 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 0.8 MAX. 0.10 M 0.1 µ PA1874GR-9JG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note 1 Note 2 EQUIVALENT CIRCUIT 30 ±12 ±8.0 ±80 2.0 150 V V A A W °C °C Gate1 Gate Protection Diode Source1 Drain1 Drain2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode Gate2 Gate Protection Diode Source2 Body Diode Total Power Dissipation (2 unit) Channel Temperature Storage Temperature –55 to +150 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15631EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan © 2001 µPA1874 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 4.0 V ID = 8.0 A IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 50 A/ µs TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VGS = 4.0 V, ID = 4.0 A VGS = 3.1 V, ID = 4.0 A VGS = 2.5 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 4.0 A VGS = 4.0 V RG = 10 Ω 0.5 5.0 9.0 9.5 10.0 11.0 11.0 11.5 12.5 14.5 1280 260 170 70 310 440 410 14 2.0 7.0 0.81 290 310 14.0 14.5 16.5 19.5 1.0 MIN. TYP. MAX. 10 ±10 1.5 UNIT µA µA V S mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS 0 10% VGS 90% IG = 2 mA 50 Ω RL VDD VDD PG. 90% VDS 90% 10% 10% VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G15631EJ1V0DS µPA1874 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 FORWARD BIAS SAFE OPERATING AREA 1000 PW =1 0µ s 10 0µ s 1m s dT - Derating Factor - % 100 ID - Drain Current - A (on ) ID(pulse) d ite ) Lim .5 V 4 = ID(DC) S 60 10 R DS (V G 40 1 10 ms 10 0m s DC 20 0.1 Single Pulse D (FET1) : PD (FET2) = 1 : 1 0 30 60 90 120 TA - Ambient Temperature - ˚C 150 0.01 P 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 35 30 Pulsed FORWARD TRANSFER CHARACTERISTICS 100 10 ID - Drain Current - A Pulsed VDS = 10 V ID - Drain Current - A 25 20 15 10 5 0 VGS = 4.5 V 4.0 V 3.1 V 2.5 V 1 0.1 TA = 125˚C 25˚C 75˚C 0.01 0.001 0.0001 −25˚C 0 0.1 0.2 0.3 0.4 0.00001 0 0.5 1 1.5 2 VDS - Drain to Source Voltage - V VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V 1.5 VDS = 10 V ID = 1 mA 100 VDS = 10 V Pulsed 10 TA = −25˚C 25˚C 75˚C 1 1.0 125˚C 0.1 0.5 −50 0 50 100 150 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G15631EJ1V0DS 3 µPA1874 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 VGS = 3.1 V RDS(on) - Drain to Source On-state Resistance - mΩ 30 VGS = 2.5 V 25 TA = 125˚C 75˚C 15 25˚C −25˚C 10 5 0.01 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 TA = 125˚C 75˚C 15 25˚C −25˚C 10 20 0.1 1 10 ID - Drain Current - A 100 5 0.01 0.1 1 10 ID - Drain Current - A 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 VGS = 4.0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 VGS = 4.5 V 20 TA = 125˚C 15 75˚C 25˚C 10 −25˚C TA = 125˚C 15 75˚C 25˚C 10 −25˚C 5 0.01 0.1 1 10 ID - Drain Current - A 100 5 0.01 0.1 1 10 ID - Drain Current - A 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 ID = 4.0 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 ID = 4.0 A 20 VGS = 2.5 V 3.1 V 4.0 V 40 30 15 4.5 V 20 10 10 5 −50 0 50 100 150 0 0 2 4 6 8 10 12 Tch - Channel Temperature - ˚C VGS - Gate to Source Voltage - V 4 Data Sheet G15631EJ1V0DS µPA1874 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 1000 td(off) tf tr 100 td(on) f = 1 MHz VGS = 0 V 1000 Ciss 100 Coss Crss 10 0.1 1 10 100 10 0.1 VDD = 10 V VGS = 4 V RG = 10 Ω 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 ISD - Diode Forward Current - A DYNAMIC INPUT CHARACTERISTICS 5 VGS - Gate to Source Voltage - V VGS = 0 V ID = 8.0 A 4 10 VDD = 24 V 15 V 6V 3 1 2 0.1 1 0.01 0.4 0.6 0.8 1.0 1.2 0 0 5 VSD - Source to Drain Voltage - V 10 15 QG - Gate Charge - nC 20 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W Single Pulse PD (FET1) : PD (FET2) = 1:1 Mounted on FR-4 board of 25 cm2 x 1.6 mm 125˚C/W 100 Mounted on Ceramic board of 50 cm2 x 1.1 mm 62.5˚C/W 10 1 0.1 0.001 0.01 0.1 1 PW - Pulse Width - s 10 100 1000 Data Sheet G15631EJ1V0DS 5 µPA1874 [MEMO] 6 Data Sheet G15631EJ1V0DS µPA1874 [MEMO] Data Sheet G15631EJ1V0DS 7 µPA1874 • The information in this document is current as of December, 2001. 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