UPA806T

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959) PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 0.65 0.65 2.0±0.2 1.3 2 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. 3 0.9±0.1 µPA806T 0.7 4 5 µPA806T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONFIGURATION (Top View) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 9 6 2 30 150 in 1 element 200 in 2 elements Note 150 –65 to +150 UNIT V V V mA mW 6 Q1 5 0~0.1 4 Q2 1 2 3 PIN CONNECTIONS 4. Emitter (Q2) 1. Collector (Q1) 5. Base (Q2) 2. Emitter (Q1) 6. Base (Q1) 3. Collector (Q2) Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note 110 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document No. ID-3640 (O.D. No. ID-9147) Date Published April 1995 P Printed in Japan © 0.15 –0 +0.1 0.2 –0 1 6 +0.1 XY 1995 µPA806T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure hFE Ratio SYMBOL ICBO IEBO hFE fT Cre |S21|2 NF hFE1/hFE2 CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mANote 1 75 12 0.4 7 8.5 1.5 0.85 2.5 0.7 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT µA µA VCE = 3 V, IC = 10 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 10 mA A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank Marking hFE Value KB T83 75 to 150 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V Total Power Dissipation PT (mW) Free Air 200 Collector Current IC (mA) 100 150 2 40 El em Pe en ts rE in t 30 lem To 100 en ta l 20 10 0 50 0 0.5 Base to Emitter Voltage VBE (V) 1.0 Ambient Temperature TA (°C) 2 µPA806T COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 µA Collector Current IC (mA) 50 40 30 200 µA 20 10 0 0.1 0.2 Collector to Emitter Voltage VCE (V) IB = 100 µA DC Current Gain hFE 400 µA 300 µA 200 DC CURRENT GAIN vs. COLLECTOR CURRENT 5V VCE = 3 V 100 0 0.5 1 2 5 10 20 50 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 Gain Bandwidth Product fT (GHz) 12 10 8 VCE = 1 V 6 4 2 0.5 Insertion Power Gain l S21e l 2 (dB) f = 2 GHz 5V 3V 10 INSERTION GAIN vs. COLLECTOR CURRENT f = 2 GHz 5V 8 3V VCE = 1 V 6 4 2 1 2 5 10 20 50 1 2 5 10 20 50 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT 4 Feed-back Capacitance Cre (pF) f = 2 GHz VCE = 3 V Noise Figure NF (dB) 3 0.6 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz 0.5 2 0.4 1 0.3 0 0.5 1 2 5 10 20 50 0.2 0.5 1 2 5 10 20 Collector Current IC (mA) Collector to Base Voltage VCB (V) 3 µPA806T S-PARAMETERS V CE = 3 V , I C = 1 m A, Z O = 5 0 Ω f GHz 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.9340 0.9040 0.8150 0.7530 0.6540 0.5900 0.5160 0.4590 0.4230 0.3670 0.3370 0.3150 0.3080 0.2930 0.2950 S11 ANG –15.7 –29.4 –43.4 –56.6 –68.9 –79.8 –90.1 –101.5 –110.8 –123.9 –136.7 –145.5 –159.1 –164.8 –179.6 MAG 3.5100 3.3520 3.1060 2.8840 2.6050 2.4490 2.2610 2.0780 1.9250 1.8700 1.7790 1.6600 1.5690 1.5190 1.4610 S21 ANG 164.8 150.7 138.0 126.3 115.1 105.4 96.8 89.4 83.7 76.3 69.9 64.1 59.4 55.3 50.7 MAG 0.0450 0.0780 0.1140 0.1370 0.1490 0.1660 0.1770 0.1780 0.1880 0.1900 0.2110 0.2140 0.2070 0.2140 0.2260 S12 ANG 82.6 68.0 62.8 58.0 55.2 45.4 44.8 45.1 42.5 41.9 43.9 41.9 42.8 45.8 45.4 MAG 0.9850 0.9410 0.8960 0.8260 0.7830 0.7220 0.6790 0.6430 0.6290 0.5880 0.5630 0.5520 0.5450 0.5220 0.4960 S22 ANG –8.7 –17.1 –23.6 –29.9 –34.7 –38.0 –42.0 –45.2 –46.8 –51.4 –54.3 –57.0 –59.2 –64.5 –61.3 V CE = 3 V , I C = 3 m A, Z O = 5 0 Ω f GHz 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.8020 0.6780 0.5440 0.4430 0.3540 0.2930 0.2360 0.2000 0.1820 0.1480 0.1370 0.1340 0.1640 0.1500 0.1780 S11 ANG –25.9 –45.8 –62.8 –75.7 –87.3 –99.7 –108.4 –121.0 –129.5 –151.7 –166.1 175.2 169.7 170.9 147.7 MAG 8.8990 7.4880 6.1260 5.1230 4.3050 3.7880 3.3560 3.0100 2.6960 2.5340 2.3820 2.1870 2.0530 1.9660 1.8710 S21 ANG 154.2 134.4 119.6 108.1 99.1 91.3 84.8 79.1 74.4 69.4 64.0 60.0 55.8 53.0 49.6 MAG 0.0370 0.0760 0.0860 0.1050 0.1210 0.1330 0.1440 0.1570 0.1760 0.1940 0.2150 0.2130 0.2410 0.2490 0.2750 S12 ANG 67.2 65.6 60.9 58.4 55.9 61.2 55.4 56.2 58.0 56.1 56.3 57.8 57.6 55.2 56.6 MAG 0.9420 0.8040 0.7060 0.6250 0.5660 0.5190 0.4950 0.4660 0.4560 0.4310 0.4050 0.3990 0.3950 0.3750 0.3740 S22 ANG –15.7 –26.6 –33.2 –36.6 –38.3 –41.4 –43.9 –44.5 –44.5 –48.8 –51.9 –52.8 –52.9 –59.2 –60.8 4 µPA806T S-PARAMETERS V CE = 3 V , I C = 5 m A, Z O = 5 0 Ω f GHz 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.6900 0.5360 0.4010 0.3150 0.2360 0.1850 0.1440 0.1230 0.1040 0.1000 0.1110 0.1040 0.1180 0.1190 0.1490 S11 ANG –33.3 –54.7 –70.0 –82.4 –93.8 –105.4 –115.8 –134.4 –144.6 –170.6 167.4 158.2 156.3 150.0 142.4 MAG 12.2960 9.4300 7.2390 5.8220 4.7830 4.1700 3.6410 3.2380 2.8910 2.7040 2.5330 2.3270 2.1850 2.0910 1.9760 S21 ANG 147.1 125.5 111.3 101.1 93.4 86.4 80.7 76.1 71.4 67.3 62.6 58.7 54.9 52.6 49.0 MAG 0.0320 0.0610 0.0700 0.0950 0.1090 0.1260 0.1350 0.1560 0.1770 0.1930 0.2080 0.2260 0.2560 0.2560 0.2860 S12 ANG 74.8 66.3 59.6 63.8 62.3 61.9 65.9 61.2 62.4 60.7 60.6 61.6 58.2 56.8 56.6 MAG 0.8850 0.7210 0.6030 0.5230 0.4870 0.4600 0.4360 0.4170 0.4020 0.3940 0.3710 0.3500 0.3560 0.3520 0.3410 S22 ANG –19.7 –30.3 –34.5 –36.7 –38.0 –38.8 –40.4 –42.6 –43.9 –45.8 –50.3 –50.2 –51.2 –58.1 –56.9 V CE = 3 V , I C = 1 0 mA, Z O = 5 0 Ω f GHz 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.5080 0.3410 0.2320 0.1770 0.1220 0.1010 0.0670 0.0620 0.0660 0.0770 0.0990 0.1140 0.1260 0.1020 0.1370 S11 ANG –43.6 –65.3 –80.7 –90.8 –108.2 –121.8 –138.2 –167.6 –171.3 146.7 146.5 128.1 136.8 129.6 123.5 MAG 17.0900 11.3980 8.2250 6.3950 5.1870 4.4390 3.8770 3.4350 3.0650 2.8540 2.6590 2.4400 2.2790 2.1950 2.0800 S21 ANG 135.9 114.2 102.0 93.8 87.2 81.6 76.9 72.4 68.8 65.0 60.5 57.0 53.5 50.9 47.9 MAG 0.0330 0.0520 0.0690 0.0880 0.1060 0.1260 0.1450 0.1590 0.1790 0.2060 0.2220 0.2420 0.2660 0.2770 0.2860 S12 ANG 63.8 68.5 69.0 71.6 69.3 70.1 70.5 65.5 65.0 63.9 62.8 60.9 59.9 59.6 58.3 MAG 0.7930 0.5910 0.5130 0.4480 0.4180 0.4030 0.3930 0.3680 0.3610 0.3480 0.3360 0.3370 0.3170 0.3280 0.3100 S22 ANG –26.2 –32.9 –32.9 –32.8 –35.9 –33.3 –36.5 –36.2 –39.5 –42.3 –46.6 –48.8 –47.2 –55.1 –51.2 5 µPA806T [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 6