UPC2711T

UPC2711T

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    UPC2711T - 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT - NEC

  • 详情介绍
  • 数据手册
  • 价格&库存
UPC2711T 数据手册
DATA DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain • Noise figure • Single supply voltage • Input and output matching • Super small package : 13 dB TYP. @ f = 1 GHz : 5 dB : 5V : 50 : : 6 pin mini mold • Excellent frequency response : 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz ORDERING INFORMATION PART NUMBER PACKAGE 6 pin mini mold SUPPLYING FORM Embossed tape 8 mm wide. Pin 1, 2, 3 face to perforation side of the tape. PPC2711T-E3 EQUIVALENT CIRCUIT VCC OUT PIN CONNECTIONS (Top View) (Bottom View) IN 3 2 1 C1G 4 5 6 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC 4 5 6 3 2 1 GND Caution: Electro-static sensitive devices Document No. P12428EJ2V0DS00 (2nd edition) (Previous No. IC-2948) Date Published March 1997 N Printed in Japan © 1993 PPC2711T ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Supply Voltage Total Circuit Current Power Dissipation Operating Temperature Storage Temperature Input Power VCC ICC PD Topt Tstg Pin 6 30 280* ð40 to +85 ð55 to +150 +10 V mA mW °C °C dBm * Mounted on 50 u 50 u 1.6 mm epoxy glass PWB (TA = +85 °C) RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage SYMBOL VCC MIN. 4.5 TYP. 5.0 MAX. 5.5 UNIT V ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5 V, ZS = ZL = 50 :) PARAMETERS Circuit Current Power Gain Maximum Output Level Noise Figure Upper Limit Operating Frequency SYMBOL ICC GP PO(sat) NF fU 2.7 MIN. 9 11 ð2 TYP. 12 13 +1 5 2.9 6.5 MAX. 15 16.5 UNIT mA dB dBm dB GHz TEST CONDITIONS No signal f = 1 GHz f = 1 GHz, Pin = 0 dBm f = 1 GHz 3 dB down below flat gain f = 0.1 GHz f = 1 GHz f = 1 GHz f = 1 GHz f = 0.1 to 2.5 GHz Isolation Input Return Loss Output Return Loss Gain Flatness ISL RLin RLout 25 20 9 30 25 12 ±0.8 dB dB dB dB 'GP 2 PPC2711T TEST CIRCUIT VCC 1 000 pF C3 6 50 Ω IN 1 000 pF C1 1 4 C2 1 000 pF 50 Ω OUT 2, 3, 5 EXAMPLE OF APPLICATION CIRCUIT VCC 1 000 pF C3 6 50 Ω IN 1 000 pF C1 1 4 C4 1 000 pF C5 1 000 pF R1 50 to 200 Ω 2, 3, 5 To stabilize operation, please connect R1, C5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 1 6 4 C2 1 000 pF 50 Ω OUT 1 000 pF C6 2, 3, 5 Capacitors for VCC, input and output pins 1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output pins. Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 S fZs).] 3 PPC2711T TYPICAL CHARACTERISTICS (TA = 25 °C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 20 18 ICC – Circuit Current – mA ICC – Circuit Current – mA 16 14 12 10 8 6 4 2 0 1 2 3 4 5 6 20 VCC = 5.0 V 18 16 14 12 10 8 6 4 2 0 –60 –40 –20 0 20 40 60 80 100 CIRCUIT CURRENT vs. OPERATING TEMPERATURE VCC – Supply Voltage – V NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY 20 VCC = 5.0 V GP – Insertion Power Gain – dB 8 NF – Noise Figure – dB 15 GP 10 VCC = 4.5 V GP – Insertion Power Gain – dB VCC = 5.5 V 15 Topt – Operating Temperature – °C INSERTION POWER GAIN vs. FREQUENCY TA = –40 °C TA = +25 °C TA = +85 °C TA = +85 °C TA = –40 °C TA = +25 °C 7 10 6 5 VCC = 5.5 V 5 0 VCC = 4.5 V NF VCC = 5.0 V 4 –5 0.1 0.3 1.0 3.0 5 0.1 VCC = 5.0 V 0.3 1.0 3.0 f – Frequency – GHz f – Frequency – GHz ISOLATION vs. FREQUENCY 0 VCC = 5.0 V –10 ISL – Isolation – dB RLin – Input Return Loss – dB RLout – Output Return Loss – dB 0 INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY VCC = 5.0 V –10 RLout –20 RLin –20 –30 –30 –40 –50 0.1 0.3 1.0 3.0 –40 0.1 0.3 1.0 3.0 f – Frequency – GHz f – Frequency – GHz 4 PPC2711T OUTPUT POWER vs. INPUT POWER 5 f = 1.0 GHz PO – Output Power – dBm OUTPUT POWER vs. INPUT POWER 5 VCC = 5.0 V f = 1.0 GHz PO – Output Power – dBm 5.5 V 0 +85 °C TA = +25 °C –20 °C 0 4.5 V VCC = 5.0 V –5 –5 –40 °C –10 –10 –15 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 5 –20 –35 –30 –25 –20 –15 –10 –5 0 5 Pin – Input Power – dBm OUTPUT POWER vs. INPUT POWER 5 f = 2.0 GHz PO – Output Power – dBm Pin – Input Power – dBm OUTPUT POWER vs. INPUT POWER 5 f = 0.5 GHz VCC = 5.0 V PO – Output Power – dBm 5.5 V 0 0 VCC = 5.0 V 4.5 V –10 –5 –5 f = 2.9 GHz –10 f = 1.0 GHz f = 2.0 GHz –15 –15 –20 –35 –30 –25 –20 –15 –10 –5 0 5 –20 –35 –30 –25 –20 –15 –10 –5 0 5 Pin – Input Power – dBm SATURATED OUTPUT POWER vs. FREQUENCY 10 PO(sat) – Saturated Output Power – dBm Pin – Input Power – dBm THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –50 f1 = 1 .000 GHz f2 = 1 .002 GHz 5.5 V 5 VCC = 5.0 V Pin = 0 dBm IM3 – 3rd Order Intermodulation Distortion – dBc –40 VCC = 5.0 V –30 5.5 V –20 4.5 V –10 0 4.5 V –5 –10 –15 0.1 0.3 1.0 3.0 0 –20 –18 –16 –14 –12 –10 –8 –6 –4 –2 0 f – Frequency – GHz PO(each) – Output Power of Each Tone – dBm 5 0.1 0.1 0.2 0.2 0.3 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 0.4 EFLECTION COEFFCIENT R 0.0TOR 3 6 IN DE 7 LE OF 0.0 4 GRE ANG 0.4 0.4 ES 0 160 4 – 6 0.0 0.0 45 15 0. 5 0.4 5 50 0 –1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 ITIV NEN 40 0 ER 4 PO 0. –1 EA OM C C 0. 4 5 0.4 5 0.0 44 0. 06 40 0. –1 15 0 0.3 0. 4 0. 0. 4 –1 NE G 0. .08 20 0.6 –1 2 2 0.4 20 1 07 0. 3 4 0. 0 13 0 0.3 0.3 0.4 02 .08 0 00 .43 0. 07 30 NE G 5 E IV AT ( –1 0 N 0. 5 0.4 1 0.0 0.4 9 02 –1 .08 0 00 .43 0. 07 30 0 0.40 0.10 –11 0.40 0.10 –11 0 0.10 0.40 110 0.10 0.40 110 0.7 0.4 1 0.0 9 0.39 0.11 –100 0.38 0.12 1.0 G –90 0.2 0.2 REACTANCE COMPONENT R –––– 0.2 ZO –90 REACTANCE COMPONENT R –––– 0.2 ZO 1.0 90 1.0 0.2 1.0 1.0 0.38 0.39 0.12 0.11 –100 0.2 0.2 0.4 0.4 0.13 0.37 0.37 0.13 0.4 0.13 0.37 0.37 0.13 0.6 1.2 0.4 0.1 G 0.6 0.6 1.2 0.6 0.4 0. 0.8 0 0 1. 0.8 1.2 1.2 0.8 0. 0. 0. 1.4 8 0.2 1.4 8 0.1 G 0.6 1. 1. 0.36 0.04 –80 2.9 G 0.15 0.35 0.35 0.15 –70 –70 1.6 1.6 1.6 3.0 0.35 0.15 2.9 G 1.4 2.0 1.4 1.8 1.4 0.36 0.04 –80 0 0 4 0.3 6 0.1 4 0.3 6 0.1 –6 0.1 0.3 7 3 3 0.3 7 0.1 0.1 0 3 0.3 7 2.0 4.0 5.0 2.0 –6 0 –5 –5 32 0. 18 0. 32 18 0. 0 0. 3. 0 3. 4.0 4.0 6.0 6.0 10 20 10 50 20 50 0 .2 0 1 0 .2 9 0.2 0.2 0.2 2 8 20 0.23 0.27 10 0.24 0.26 0.25 0.25 0 0.26 0.24 –10 0.27 0.2 0.23 8 0.2 2 –20 0.2 00 9 0.2 0.3 1 – 0.2 0 0 0.2 0 50 50 20 0 .3 0 30 30 0.3 0 20 6.0 20 10 19 0. 31 0. 40 –4 0 0. 0. 31 19 19 0. 31 0. 40 10 3. 1 0.2 9 0.2 30 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0.25 0.25 0 0.26 0.24 –10 0.27 0.23 0.2 8 0.2 2 –20 0.2 00 9 0.2 0.3 1 – 0.2 0 0 30 0. 3 –4 0.1 1 0 9 6 S22-FREQUENCY S11-FREQUENCY WAVELE NG WAVELE NGTH S 0.01 0.02 TOWARD 0.49 0.0 GENE 0.48 3 RA 0 FLECTION COEFFCIENT 0.4 RE 0.0TOR 3 IN DE 7 LE OF 0.0 4 GRE ANG 0.4 ES 0 160 – S PARAMETER .47 0.48 0.02 0.49 0.01 0 0 0.1 6 0.1 0.2 0.2 6 0.4 4 0.0 50 –1 T NEN PO 0.1 0.3 0.0 0 .4 5 5 0.3 0. 0. 06 44 0. 07 0. 4 0.2 5 0. O E NC TA AC – JX– – RE ––ZO ) ( 0.4 0.7 ( –Z–+–J–XTANCE CO ) MPO OM EC NC TA AC – JX– – –ZO RE – E IV AT ) 0.2 POS 14 ITIV 0 ER EA CT +A –– JX NCE –– ZO CO M PO N ( ) 5 0. 43 0 13 8 0.0 2 0.4 20 1 T EN T EN 0 0.6 .09 0.4 9 0.0 1 0.4 0.4 0.6 0.6 1 0.7 0.5 0.5 0.7 ( ( 0.8 0.8 0.6 0.8 0.6 0.8 0.11 0.39 100 0.11 0.39 100 ) 0.7 0.8 0.9 0.9 ) 0.7 0.8 0.9 1.0 0.4 0.9 0.9 0.12 0.38 0.12 0.38 0.9 1.0 90 0.2 0.4 0.6 0.4 0.6 0.6 0.8 8 0.2 8 1. 0 1. 1.0 G 0.14 0.36 80 1. 0 0.14 0.36 80 1.6 0 0 1.6 1.8 2.0 1. 0 1. 0 1.4 0.15 0.35 70 70 1.6 0.1 6 0.3 4 0.1 6 0.3 4 1.8 1.8 1.8 3.0 2.0 1.8 6 00 0. 6 00 2.0 0.1 0.3 7 3 4.0 5.0 50 0. 18 32 50 0. 0. 18 32 3. 0 0 10 4.0 4.0 6.0 10 20 50 50 PPC2711T PPC2711T Illustration of evaluation board for the test circuit 2.8 1.2 1.2 0.4 9–φ 7.5 Through holes 15 2.5 2.5 2.5 2.5 3 3 2.5 2.5 2.5 2.5 7.5 7.5 5 5 22 10 10 0.75 1.2 0.2 4.8 7.5 15 0.2 4.8 IN OUT VCC φ2 3 72–φ 0.5 Through holes 22 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 15 0.4 φ 0.9 0.75 3.6 2.8 15 φ2 30±0.05 (Back side) (Surface) Note (1) 30 u 30 u 0.4 mm double sided copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) : Through holes 30±0.05 7 PPC2711T 6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm) 0.3 +0.1 –0.05 0.13±0.1 1 2.8 –0.3 1.5 –0.1 +0.2 +0.2 2 3 0 to 0.1 6 5 0.95 4 0.95 0.8 1.1 –0.1 +0.2 1.9 2.9±0.2 8 PPC2711T NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause abnormal oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the V CC pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. PPC2711T Recommended condition symbols IR35-00-3 Soldering method Infrared ray reflow Soldering conditions Package peak temperature: 235 °C, Hour: within 30 s. (more than 210 °C), Time: 3 times, Limited days; no.* Package peak temperature: 215 °C, Hour: within 40 s. (more than 200 °C), Time: 3 times, Limited days: no.* Soldering tub temperature: less than 260 °C, Hour: within 10 s. Time: 1 time, Limited days: no. Pin area temperature: less than 300 °C, Hour: within 3 s. Limited days: no.* VPS VP15-00-3 Wave soldering WS60-00-1 Pin part heating *: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH. Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 9 PPC2711T [MEMO] 10 PPC2711T [MEMO] 11 PPC2711T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5
UPC2711T
1. 物料型号: - 型号:PPC2711T

2. 器件简介: - 描述:2.9 GHz宽带放大器,硅双极单片集成电路。 - 特点:高功率增益(13 dB典型值@1 GHz)、出色的频率响应(2.9 GHz典型值@0.1 GHz增益下3 dB下降)、噪声系数(5 dB)、单电源电压(5 V)、输入输出匹配(50 Ω)、超小型封装(6引脚迷你模塑)。

3. 引脚分配: - 引脚1:输入(INPUT) - 引脚2:地(GND) - 引脚3:地(GND) - 引脚4:输出(OUTPUT) - 引脚5:地(GND) - 引脚6:电源(VCC)

4. 参数特性: - 供电电压:6 V - 总电路电流:30 mA - 功率耗散:280 mW - 工作温度:未提供具体数值 - 存储温度:-55至+150°C - 输入功率:+10 dBm - 电路电流:9至15 mA - 功率增益:11至16.5 dB - 最大输出电平:-2至+1 dBm - 噪声系数:5至6.5 dB - 上限工作频率:2.7至2.9 GHz - 隔离度:25至30 dB - 输入回波损耗:20至25 dB - 输出回波损耗:9至12 dB - 增益平坦度:±0.8 dB(0.1至2.5 GHz)

5. 功能详解: - 该放大器适用于宽带信号放大,具有高功率增益和低噪声特性,适用于需要宽带信号处理的应用场合。

6. 应用信息: - 应用电路及其参数仅供参考,不适用于实际设计。 - 对于VCC引脚推荐使用1000 pF的旁路电容器,以最小化VCC引脚的地阻抗。 - 对于输入/输出引脚推荐使用1000 pF的耦合电容器,以最小化射频串联阻抗并切断直流分量。

7. 封装信息: - 封装类型:6引脚迷你模塑封装。 - 封装尺寸详细信息请参考PDF文档中的图表。
UPC2711T 价格&库存

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