UPC2766GR

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2766GR/GS WIDE BAND IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER DESCRIPTION The µPC2766GR/GS is a Silicon monolithic IC designed for use as IQ demodulator in wide dynamic range compressed video or spread spectrum receivers. This IC consists of a wide band RF amplifier, gain control amplifier, dual balanced mixers (DBM), Lo buffers, and I & Q output buffer amplifiers. The package is 20 pin SSOP (shrink small outline package: µPC2766GR) or 20 pin SOP (µPC2766GS) suitable for high-density surface mount. FEATURES • Broadband operation RF & LO up to 1 000 MHz IF (IQ) up to 200 MHz • Wideband IQ phase and amplitude balance • AGC dynamic range • Low distortion; IM3 • Supply Voltage 45 dB 30 dBc 5V Amplitude balance Phase balance ±0.3 dB (TYP.) ±0.3 degree (TYP.) • Packaged in 20 pin SSOP or 20 pin SOP suitable for high-density surface mount ORDERING INFORMATION PART NUMBER PACKAGE 20 pin plastic SSOP (225 mil) 20 pin plastic SOP (300 mil) PACKAGE STYLE Embossed tape 12 mm wide. 2.5 k/REEL Pin 1 indicates pull-out direction of tape Embossed tape 24 mm wide. 2.5 k/REEL Pin 1 indicates pull-out direction of tape µPC2766GR-E1 µPC2766GS-E1 Caution electro-static sensitive device The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10193EJ4V0DS00 (4th edition) Date Published October 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1995, 1999 µPC2766GR/GS INTERNAL BLOCK DIAGRAM I out 20 I out GND IF. I 19 18 Lo I 17 Lo I 16 Lo Q Lo Q GND Q out Q out IF. Q 15 14 13 12 11 I-IF Amp. I-Lo.Buff.Amp I-MIX. I-IF Amp. I-Lo.Buff.Amp Q-MIX. RF AGC RF Pre.Amp 1 I trim 2 Vcc IF. I 3 Vcc RF 4 5 6 AGC cont. 7 8 9 10 GND RF in RF in GND Vagc Vcc Q trim RF RF IF. Q 2 Data Sheet P10193EJ4V0DS00 µPC2766GR/GS PIN FUNCTIONS PIN No. PIN NAME 1 I Trim PIN VOLTAGE TYP. (V) 4.2 FUNCTION AND EXPLANATION Trimming pin for I-IF output. EQUIVALENT CIRCUIT VCC 1 2 3 VCCIF I VCCRF 5.0 5.0 Power supply pin for I-MIXER. Power supply pin for RF and AGC block. Ground pin of RF and AGC block. RF input pin. In case of single input, 6 pin should be grounded through capacitor. To next block 6 4 5 GND RF RFin 0.0 2.6 6 RFin 2.6 5 7 8 GND RF VAGC 0.0 0 to 5 Ground pin of RF and AGC block. Gain control pin. • VAGC = 0 V: Full gain • VAGC = 5 V: Maximum reduction VCC 8 9 10 VCCIF Q Q Trim 5.0 4.2 Power supply pin for Q-MIXER. Trimming pin for Q-IF output. VCC 10 Data Sheet P10193EJ4V0DS00 3 µPC2766GR/GS PIN VOLTAGE TYP. (V) 3.3 PIN No. PIN NAME 11 Qout FUNCTION AND EXPLANATION Q-IF output pin. 11 pin and 12 pin are balance outputs. 12 EQUIVALENT CIRCUIT VCC 12 Qout 3.3 + 11 From before _ block 13 14 GNDIF Q Lo Q 0.0 2.2 Ground pin of Q-IF block. Oscillator signal input pin of Q-MIXER. In case of single input, 15 pin should be grounded through capacitor. VCC 15 Lo Q 2.2 14 15 16 Lo I 2.2 Oscillator signal input pin of I-MIXER. In case of single input, 16 pin should be grounded through capacitor. VCC 17 Lo I 2.2 17 16 18 19 GNDIF I Iout 0.0 3.3 Ground pin of I-IF block. I-IF output pin. 19 pin and 20 pin are balance outputs. 19 + VCC 20 Iout 3.3 20 From before _ block 4 Data Sheet P10193EJ4V0DS00 µPC2766GR/GS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) µPC2766GR PARAMETER Supply voltage Power dissipation Operating temperature range Storage temperature range SYMBOL VCC PD TA Tstg RATING 6.0 430 –40 to +85 –55 to +150 UNIT V mW °C °C TA = 85 °CNote 1 TEST CONDITIONS µPC2766GS PARAMETER Supply voltage Power dissipation Operating temperature range Storage temperature range SYMBOL VCC PD TA Tstg RATING 6.0 650 –40 to +85 –55 to +150 UNIT V mW °C °C TA = 85 °CNote 1 TEST CONDITIONS Note 1 Mounted on 50 × 50 × 1.6 mm double epoxy glass board. RECOMMENDED OPERATING RANGE µPC2766GR/GS PARAMETER Supply voltage Operating temperature range SYMBOL VCC TA MAX. 4.5 –40 TYP. 5.0 +25 MIN. 5.5 +85 UNIT V °C Data Sheet P10193EJ4V0DS00 5 µPC2766GR/GS ELECTRICAL CHARACTERISTICS (VCC = 5 V, TA = 25 °C,ZL = 250 Ω) µPC2766GR/GS PARAMETER Supply current RF input bandwidth SYMBOL ICC RF BW MIN. – DC 750 DC TYP. 60 DC 1000 200 MAX. 78 – UNIT mA MHz TEST CONDITIONS no input signal fIF = 40 MHz, fRF > fLO IQ phase balance ≤ ±1.5° fRF = 480 MHz, PLO = –10 dBm fRF > fLO, –3 dB down, Vagc = 0 V fRF = 480 MHz, fIF = 40 MHz PRF = –30 dBm, PLO = –10 dBm Vagc = 0 – 5 V fRF = 480 MHz, fIF = 40 MHz PRF = –30 dBm, PLO = –10 dBm IQ amplitude balance IF output bandwidth IF BW – MHz Gain control range GGC 40 45 – dB IQ phase balance ∆φ ∆G – ±0.3 ±0.3 ±1.5 ±0.5 deg – dB fRF = 480 MHz, fIF = 40 MHz PRF = –30 dBm, PLO = –10 dBm Vagc = 0 V fRF = 480 MHz, fIF = 40 MHz PLO = –10 dBm, ZL = 250 Ω fRF = 480 MHz, fIF = 40 MHz Vagc = 0 V Output voltage VO 1.2 1.5 – VP-P Conversion gain CG 15 20 25 dB STANDARD CHARACTERISTICS (REFERENCE VALUES) (VCC = 5 V, TA = 25 °C,ZL = 250 Ω) µPC2766GR/GS PARAMETER Noise figure SYMBOL NF MIN. – TYP. 21 MAX. – UNIT dB TEST CONDITIONS fRF = 480 MHz, fIF = 40 MHz PLO = –10 dBm, Vagc = 0 V fLO = 440 MHz, PLO = –10 dBm Vagc = 0 V fLO = 440 MHz, PLO = –10 dBm Vagc = 0 V fRF1 = 480 MHz, fRF2 = 490 MHz fLO = 440 MHz, Pin = –20 dBm PLO = –10 dBm, Vagc = 1 V fRF = 480 MHz, fIF = 40 MHz PRF = –10 dBm LO to RF isolation LO-RFisol – 55 – dB LO to IF isolation LO-IFisol – 10 – dB 3rd order intermodulation distortion IM3 – 30 – dBc Saturated output level PO(SAT) – +2 – dBm 6 Data Sheet P10193EJ4V0DS00 µPC2766GR/GS TYPICAL CHARACTERISTICS – on Measurement Circuit – (Note 2 Lower local) CG vs. fRF (Iout) 35 CG _ Conversion Gain _ dB CG _ Conversion Gain _ dB CG vs. fRF (Qout) 35 fIF = 40 MHz PLO = _10 dBm 30 Vagc = 0 V Note 2 25 20 15 10 5 TA = 25 ˚C TA = 85 ˚C TA = _40 ˚C fIF = 40 MHz PLO = _10 dBm 30 Vagc = 0 V Note 2 25 20 15 10 5 TA = 25 ˚C TA = 85 ˚C TA = _40 ˚C 0.1 0.5 1 fRF _ RF Frequency _ GHz 5 0.05 0.1 0.5 1 fRF _ RF Frequency _ GHz 5 CG vs. fIF (Iout) 30 CG _ Conversion Gain _ dB CG _ Conversion Gain _ dB CG vs. fIF (Qout) 30 TA = _40 ˚C 25 20 15 10 5 0 TA = 85 ˚C TA = 25 ˚C fRF = 480 MHz PRF = _30 dBm PLO = _10 dBm Vagc = 0 V Note 2 TA = _40 ˚C 25 20 15 10 5 0 _5 40 TA = 85 ˚C TA = 25 ˚C fRF = 480 MHz PRF = _30 dBm PLO = _10 dBm Vagc = 0 V Note 2 60 80 100 200 fIF _ IF Frequency _ MHz 300 _5 40 60 80 100 200 fIF _ IF Frequency _ MHz 300 Pin vs. Pout (Iout) Pout _ Output Power Level _ dBm Pin vs. Pout (Qout) VCC = 5.5 V Pout _ Output Power Level _ dBm fRF = 480 MHz fIF = 40 MHz 0 PLO = _10 dBm Vagc = 0 V _5 Note 2 _10 _15 _20 _25 _40 5 VCC = 5.0 V VCC = 4.5 V fRF = 480 MHz fIF = 40 MHz 0 PLO = _10 dBm Vagc = 0 V _5 Note 2 _10 _15 _20 _25 _40 5 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V _30 _20 _10 0 Pin _ Input Power Level _ dBm _30 _20 _10 0 Pin _ Input Power Level _ dBm Data Sheet P10193EJ4V0DS00 7 µPC2766GR/GS IQ PHASE BALANCE vs. fRF IQ AMPLITUDE BALANCE vs. fRF 2 ] (dB) I Q 0 TA = _40 ßC TA = 85 ˚C 1.5 1 0.5 0 _0.5 _1 fIF = 40 MHz PRF = _30 dBm _1.5 PLO = _10 dBm _2 Note 2 0.05 0.1 TA = 25 ˚C TA = 85 ˚C TA = _40 ˚C I-Q Phase Balance ( I Q )˚ _5 TA = 25 ˚C _10 _15 fIF = 40 MHz PRF = _30 dBm PLO = _10 dBm Note 2 _20 0.05 0.1 I-Q Amplitude Balance [ 0.5 1 _ RF Frequency _ GHz fRF 5 0.5 1 _ RF Frequency _ GHz fRF 5 IM3 _ Third Intermodulation Distortion _ dBc Pout _ Output Power Level _ dBm IM3 vs. Pin (Iout) fRF1 = 480 MHz fRF2 = 490 MHz 40 0 fLO = 4_ MHz PLO = 10 dBm Pin = _20 dBm each _10 Vagc = 1.0 V IM3 _ Third Intermodulation Distortion _ dBc Pout _ Output Power Level _ dBm IM3 vs. Pin (Qout) fRF1 = 480 MHz fRF2 = 490 MHz fLO = 4_ MHz 0 PLO = 40 dBm 10 Pin = _20 dBm each _10 Vagc = 1.0 V 10 10 VCC = 4.5 V _20 _30 _40 _50 _60 _40 _30 VCC = 4.5 V VCC = 5.0 V VCC = 5.5 V _20 _30 _40 _50 _60 _40 _30 VCC = 5.0 V VCC = 5.5 V _20 _10 0 _20 _10 0 Pin _ Input Power Level _ (dBm) Pin _ Input Power Level _ (dBm) CG vs. Vagc (Iout) 20 fRF = 480 MHz fIF = 40 MHz PRF = _30 dBm PLO = _10 dBm VCC = 5.0 V Note 2 20 CG vs. Vagc (Qout) fRF = 480 MHz fIF = 40 MHz PRF = _30 dBm PLO = _10 dBm VCC = 5.0 V Note 2 CG _ Conversion Gain _dB 10 0 _10 _20 _30 CG _ Conversion Gain _dB 5 10 0 _10 _20 _30 0 1 2 4 3 Vagc _ AGC Voltage _ V 0 1 2 3 4 5 Vagc _ AGC Voltage _ V 8 Data Sheet P10193EJ4V0DS00 µPC2766GR/GS IM3 vs. Vagc (Iout) fRF1 = 480 MHz fRF2 = 490 MHz fLO = 440 MHz Pin = _20 dBm each PLO = _10 dBm IM3 vs. Vagc (Qout) 0 _10 _20 _30 _40 _50 fRF1 = 480 MHz fRF2 = 490 MHz fLO = 440 MHz Pin = _20 dBm each PLO = _10 dBm IM3 _ Third Intermodulation Distortion _ dBc 0 _10 _20 _30 _40 _50 IM3 _ Third Intermodulation Distortion _ dBc 0 1 2 3 4 Vagc _ AGC Voltage _ V 5 0 1 2 3 4 Vagc _ AGC Voltage _ V 5 IM3 _ Third Intermodulation Distortion _ dBc IM3 _ Third Intermodulation Distortion _ dBc IM3 vs. CG (Iout) 0 fRF1 = 480 MHz fRF2 = 490 MHz _10 fLO = 440 MHz Pin = _20 dBm each PLO = _10 dBm Vagc = 0 to 5 V _20 _30 _40 _50 IM3 vs. CG (Qout) 0 fRF1 = 480 MHz fRF2 = 490 MHz _10 fLO = 440 MHz Pin = _20 dBm each PLO = _10 dBm Vagc = 0 to 5 V _20 _30 _40 _50 _30 _20 _10 0 10 _ Conversion Gain _ dB CG 20 _30 _20 _10 0 10 _ Conversion Gain _ dB CG 20 Data Sheet P10193EJ4V0DS00 9 µPC2766GR/GS MEASUREMENT CIRCUIT (@ ZL = 250 Ω) Spectrum Analyzer 50 Ω I out 200 Ω Note 3 Power Divider 300 nH 8 pF 300 nH 250 Ω 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 250 Ω 8 pF 50 Ω Q out 200 Ω Note 3 OSC IN 1 000 pF 1 000 pF 20 19 18 17 16 15 14 13 12 11 I-IF Amp. I-Lo.Buff.Amp I-MIX. Q-IF Amp. Q-Lo.Buff.Amp Q-MIX. RF AGC RF Pre.Amp. 1 2 3 4 5 6 AGC cont. 8 9 10 7 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF SG RF IN Vagc Vcc Note 3 is Low pass filter in order to eliminate local leak. 10 Data Sheet P10193EJ4V0DS00 µPC2766GR/GS APPLICATION CIRCUIT EXAMPLE OSC IN 90˚ PHASE SHIFTER 0˚ I out I out 90˚ Q out Q out LPF LPF 1 000 pF 1 000 pF 17 16 15 14 13 LPF LPF 1 000 pF 1 000 pF 20 19 18 1 000 pF 1 000 pF 12 11 I-IF Amp. I-Lo.Buff.Amp. I-MIX. Q-IF Amp. Q-Lo.Buff.Amp. Q-MIX. RF AGC RF Pre.Amp. 1 2 3 4 5 6 AGC cont. 7 8 9 10 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 5 kΩ RF IN Vagc Vcc 5 kΩ 1 000 pF I Bias Trim Q Bias Trim Data Sheet P10193EJ4V0DS00 11 µPC2766GR/GS PACKAGE DIMENSIONS 20 PIN PLASTIC SSOP (225 mil) (UNIT: mm) 20 11 detail of lead end 3˚–3˚ +7˚ 1 6.7 ± 0.3 10 1.8 MAX. 1.5 ± 0.1 6.4 ± 0.2 4.4 ± 0.1 1.0 ± 0.2 0.5 ± 0.2 0.65 0.22 –0.05 0.1 ± 0.1 +0.10 0.15 0.10 M 0.15 0.575 MAX. +0.10 –0.05 NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. 12 Data Sheet P10193EJ4V0DS00 µPC2766GR/GS 20 PIN PLASTIC SOP (300 mil) (UNIT: mm) 20 11 detail of lead end 3° +7° –3° 1 12.7±0.3 1.55±0.1 10 7.7±0.3 5.6±0.2 1.1 1.27 0.4±0.1 0.1±0.1 1.8 MAX. 0.12 M 0.78 MAX. 0.10 0.6±0.2 0.20 –0.05 +0.10 NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. Data Sheet P10193EJ4V0DS00 13 µPC2766GR/GS RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used or in case soldering is done under different conditions. For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). µ PC2766GR Soldering process Infrared ray reflow Soldering conditions Peak package’s surface temperature: 235 °C or below, Reflow time: 30 seconds or below (210 °C or higher), Number of reflow process: 3, Exposure limit Note: None Peak package’s surface temperature: 215 °C or below, Reflow time: 40 seconds or below (200 °C or higher), Number of reflow process: 3, Exposure limit Note: None Solder temperature: 260 °C or below, Flow time: 10 seconds or below, Number of flow process: 1, Exposure limit Note: None Terminal temperature: 300 °C or below, Flow time: 3 seconds or below, Exposure limit Note: None Symbol IR35-00-3 VPS VP15-00-3 Wave soldering WS60-00-1 Partial heating method Note Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Caution Do not apply more than single process at once, except for “Partial heating method”. 14 Data Sheet P10193EJ4V0DS00 µPC2766GR/GS [MEMO] Data Sheet P10193EJ4V0DS00 15 µPC2766GR/GS • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98.8