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UPG181GR-E1

UPG181GR-E1

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    UPG181GR-E1 - GaAs MMIC DBS Twin IF Switch - NEC

  • 数据手册
  • 价格&库存
UPG181GR-E1 数据手册
DATA SHEET GaAs INTEGRATED CIRCUIT µPG181GR GaAs MMIC DBS Twin IF Switch DESCRIPTION The µPG181GR is intended for use in Direct Broadcast Satellite (DBS) applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required. It offers two intermediate frequency amplifier channels that can independently select 1 of 2 IF inputs. It is loused in a very small 16-pin plastic HTSSOP package available on tape-and-reel and easy to install and contributes to miniaturizing the systems. FEATURES • Two Independent IF Channels • Integral Switching to Channel Input to Either Channel Output • Insertion Loss Per Channel • Frequency Range : 5.0 dB TYP. (ZO = 50 Ω) : 950 MHz to 2 150 MHz • Channel to Channel Isolation : 33 dB TYP. • Small 16-pin HTSSOP Package ORDERING INFORMATION (PLAN) Part Number Package 16-pin Plastic HTSSOP Supplying Form Carrier tape width 12 mm. Qty 3 kp/reel. µPG181GR-E1 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG181GR) Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs MES-FET. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14268EJ2V0DS00 (2nd edition) Date Published November 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1999 µPG181GR ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Control Voltage 1, 2, 3, 4 Total Power Dissipation Operating Ambient Temperature Storage Temperature Symbol VCONT1, 2, 3, 4 Ptot TA Tstg Ratings −6 to +6 2 Note2 Note 1 Unit V W °C °C −40 to +85 −65 to +150 Notes 1. | VCONT(H) − VCONT(L) | ≤ 6.0 V 2. Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TC = +85 °C PIN CONNECTION AND INTERNAL BLOCK DIAGRAM (TOP VIEW) Pin No. 1 2 3 4 Connection IN2 GND GND VCONT3 Pin No. 5 6 7 8 Connection VCONT4 GND GND OUT2 Pin No. 9 10 11 12 Connection OUT1 GND GND VCONT2 Pin No. 13 14 15 16 Connection VCONT1 GND GND IN1 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 2 Data Sheet P14268EJ2V0DS00 µPG181GR RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Control Voltage (High) Control Voltage (Low) Symbol VCONT(H) VCONT(L) MIN. +4.5 −0.5 TYP. +5 0 MAX. +5.5 +0.5 Unit V V ELECTRICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified: VCONT1 to VCONT4 = 0/ +5 V, ZO = 50 Ω, LL, LR, RL, RR Each Port) Parameter Insertion Loss Insertion Loss Flatness Insertion Loss Flatness Channel Isolation Channel Isolation Output Return Loss Control Current Symbol LINS ∆LINS ∆LINS ISL ISL RLout ICONT Test Conditions f = 0.95 GHz to 2.15 GHz | LINS (0.95 GHz) − LINS (1.7 GHz) | | LINS (0.95 GHz) − LINS (2.15 GHz) | f = 0.95 GHz to 1.7 GHz f = 1.7 GHz to 2.15 GHz f = 0.95 GHz to 2.15 GHz VCONT = +5 V/0 V, RF OFF MIN. − − − 30 25 13 − TYP. 5.0 0.5 0.8 33 30 16 − MAX. 7.0 1.2 1.5 − − − 200 Unit dB dB dB dB dB dB µA Data Sheet P14268EJ2V0DS00 3 µPG181GR EVALUATION CIRCUIT VCONT1 to VCONT4 = 0/ +5 V, ZO = 50 Ω, DC Blocking Capacitor = 51 pF VCONT1 VCONT2 C = 51 pF IN1 (L) ZO = 50 Ω 16 1 000 pF 1 000 pF C = 51 pF OUT1 ZO = 50 Ω 9 1 ZO = 50 Ω IN2 (R) C = 51 pF VCONT3 VCONT4 1 000 pF 1 000 pF 8 ZO = 50 Ω OUT2 C = 51 pF CHANNEL SELECT TRUTH TABLE Output On Channel OUT1 L OUT2 L IN1 − OUT1 IN1 − OUT2 IN1 − OUT1 IN2 − OUT2 IN2 − OUT1 IN1 − OUT2 IN2 − OUT1 IN2 − OUT2 VCONT1 Low VCONT2 High VCONT3 High VCONT4 Low Control Pin L R Low High Low High R L High Low High Low R R High Low Low High 4 Data Sheet P14268EJ2V0DS00 µPG181GR TYPICAL CHARACTERISTICS (TA = +25 °C) INSERTION LOSS vs. FREQUENCY log MAG 0 1 Insertion Loss LINS (dB) 2 dB/div. 2 –10 3 1: –4.49 dB 0.95 GHz 2: –4.93 dB 1.7 GHz 3: –5.31 dB 2.15 GHz –20 START 0.050 000 000 GHz Frequency f (GHz) STOP 5.050 000 000 GHz ISOLATION vs. FREQUENCY log MAG 0 10 dB/div. Isolation ISL (dB) 1 –50 2 3 1: –54.70 dB 0.95 GHz 2: –46.12 dB 1.7 GHz 3: –40.84 dB 2.15 GHz –100 START 0.050 000 000 GHz Frequency f (GHz) STOP 5.050 000 000 GHz Data Sheet P14268EJ2V0DS00 5 µPG181GR INPUT RETURN LOSS vs. FREQUENCY log MAG 0 5 dB/div. Input Return Loss RLin (dB) 1 2 –25 1: –17.37 dB 0.95 GHz 2: –15.07 dB 1.7 GHz 3: –13.41 dB 2.15 GHz –50 START 0.050 000 000 GHz Ferquency f (GHz) STOP 5.050 000 000 GHz 3 OUTPUT RETURN LOSS vs. FREQUENCY log MAG 0 5 dB/div. Output Return Loss RLout (dB) –25 1 2 3 1: –32.13 dB 0.95 GHz 2: –19.73 dB 1.7 GHz 3: –19.68 dB 2.15 GHz –50 START 0.050 000 000 GHz Frequency f (GHz) STOP 5.050 000 000 GHz 6 Data Sheet P14268EJ2V0DS00 µPG181GR PACKAGE DIMENSIONS 16 PIN HTSSOP (Unit: mm) (Bottom View) 6.4 ±0.3 0.20 ±0.10 (0.4) 0.65 ±0.1 (1.8) 9 8 5.5 ±0.3 0.20 ±0.10 16 1 (0.1) (2.5) 5.2 ±0.2 0.9 ±0.2 (1.5) Data Sheet P14268EJ2V0DS00 (2.7) 7 (0.5) µPG181GR RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Recommended Condition Symbol IR35-00-3 Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Note Count: 3, Exposure limit: None Package peak temperature: 215 °C or below Time: 40 seconds or less (at 200 °C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260 °C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Note Exposure limit: None VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 8 Data Sheet P14268EJ2V0DS00 µPG181GR [MEMO] Data Sheet P14268EJ2V0DS00 9 µPG181GR [MEMO] 10 Data Sheet P14268EJ2V0DS00 µPG181GR [MEMO] Data Sheet P14268EJ2V0DS00 11 µPG181GR CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • D escriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8
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