UPG2179TB

DATA SHEET GaAs INTEGRATED CIRCUIT µPG2179TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2179TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.5 to 5.3 V. This device can operate frequency from 0.05 to 3.0 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Switch control voltage • Low insertion loss : Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) : Lins1 = 0.25 dB TYP. @ f = 0.05 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins3 = 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins4 = 0.40 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V • High isolation • Handling power : ISL1 = 27 dB TYP. @ f = 0.05 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL2 = 24 dB TYP. @ f = 2.0 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Pin (0.1 dB) = +29.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Pin (1 dB) = +32.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATIONS • L, S-band digital cellular or cordless telephone • PCS, W-LAN, WLL and BluetoothTM etc. ORDERING INFORMATION Part Number Package 6-pin super minimold Marking G4C Supplying Form • Embossed tape 8 mm wide • Pin 4, 5, 6 face the perforation side of the tape • Qty 3 kpcs/reel µPG2179TB-E4 Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2179TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10454EJ02V0DS (2nd edition) Date Published March 2004 CP(K) Printed in Japan The mark shows major revised points.  NEC Compound Semiconductor Devices 2003, 2004 µPG2179TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) 1 61 (Top View) 66 (Bottom View) 1 Pin No. 1 2 3 4 Pin Name OUTPUT1 GND OUTPUT2 Vcont2 INPUT Vcont1 G4C Vcont1 Low High Low Parameter Parameter 2 52 55 2 3 43 44 3 5 6 TRUTH TABLE Vcont2 High INPUT−OUTPUT1 ON OFF INPUT−OUTPUT2 OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Symbol Vcont Pin TA Tstg Ratings 6.0 Note Unit V dBm °C °C Switch Control Voltage Input Power Operating Ambient Temperature Storage Temperature +33 −45 to +85 −55 to +150 Note Vcont1 − Vcont2 ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Symbol Vcont (H) Vcont (L) MIN. 2.5 −0.2 TYP. 3.0 0 MAX. 5.3 0.2 Unit V V Switch Control Voltage (H) Switch Control Voltage (L) 2 Data Sheet PG10454EJ02V0DS µPG2179TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) Parameter Insertion Loss 1 Insertion Loss 2 Insertion Loss 3 Insertion Loss 4 Isolation 1 Isolation 2 Input Return Loss Output Return Loss 0.1 dB Loss Compression Input Power Note2 Symbol Lins1 Lins2 Lins3 Lins4 ISL1 ISL2 RLin RLout Pin (0.1 dB) Test Conditions f = 0.05 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 3.0 GHz f = 0.05 to 2.0 GHz f = 2.0 to 3.0 GHz f = 0.05 to 3.0 GHz f = 0.05 to 3.0 GHz f = 2.0 GHz f = 2.5 GHz f = 0.5 to 3.0 GHz Note1 Note1 Note1 MIN. − − − − 23 20 15 15 +25.5 +25.5 − − − TYP. 0.25 0.30 0.35 0.40 27 24 20 20 +29.0 +29.0 +29.0 4 50 MAX. 0.45 0.50 0.55 0.60 − − − − − − − 20 500 Unit dB dB dB dB dB dB dB dB dBm dBm dBm Note1 Switch Control Current Switch Control Speed Icont tsw No signal 50%CTL to 90/10%RF µA ns Note1. DC cut capacitor = 1 000 pF at f = 0.05 to 0.5 GHz. 2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) Parameter 1 dB Loss Compression Input Power Note Symbol Pin (1 dB) Test Conditions f = 0.5 to 3.0 GHz MIN. − TYP. +32.0 MAX. − Unit dBm 3rd Order Intermodulation Intercept Point IIP3 f = 0.5 to 3.0 GHz, 2 tone, 5 MHz spicing − +60.0 − dBm Note Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. Caution When using this IC, a DC coupling capacitor must be externally attached to the I/O pins. A DC coupling capacitor with a capacitance of 100 pF or lower is recommended when using a frequency of 0.5 GHz or higher, and one with a capacitance of 1,000 pF is recommended when using a frequency of less than 0.5 GHz. The ideal value changes depending on the frequency and bandwidth used, so select a capacitor with a suitable capacitance according to the usage conditions. Data Sheet PG10454EJ02V0DS 3 µPG2179TB EVALUATION CIRCUIT OUTPUT2 OUTPUT1 CO CO 3 2 1 4 5 6 1 000 pF CO 1 000 pF Vcont2 INPUT Vcont1 Remark CO : 0.05 to 0.5 GHz 1 000 pF 0.5 to 3.0 GHz 100 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10454EJ02V0DS µPG2179TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont2 6pin SMM SPDT SW Vc2 OUTPUT2 OUT 2 C2 C 2 C 4 C1 INPUT C1 IN C 5 C3 G4C C1 C 1 C2 OUT 1 OUTPUT1 Vc1 Vcont1 USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 Values 100 pF 1 000 pF Data Sheet PG10454EJ02V0DS 5 µPG2179TB TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) INPUT–OUTPUT1 INSERTION LOSS vs. FREQUENCY 0.5 0.4 Insertion Loss Lins (dB) Insertion Loss Lins (dB) INPUT–OUTPUT2 INSERTION LOSS vs. FREQUENCY 0.5 0.4 0.3 0.2 0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) 0.3 0.2 0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) INPUT–OUTPUT1 ISOLATION vs. FREQUENCY 50 40 30 Isolation ISL (dB) INPUT–OUTPUT2 ISOLATION vs. FREQUENCY 50 40 30 Isolation ISL (dB) 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) INPUT–OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY 50 40 Input Return Loss RLin (dB) Input Return Loss RLin (dB) INPUT–OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY 50 40 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10454EJ02V0DS µPG2179TB INPUT–OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY 50 40 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) INPUT–OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY 50 40 30 20 10 0 –10 –20 –30 –40 –50 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 Frequency f (GHz) Output Return Loss RLout (dB) OUTPUT POWER vs. INPUT POWER 33 31 f = 1.0 GHz 33 31 Output Return Loss RLout (dB) OUTPUT POWER vs. INPUT POWER f = 2.5 GHz Output Power Pout (dBm) 27 25 23 21 19 17 15 13 15 17 19 21 23 25 27 29 31 33 35 Output Power Pout (dBm) 29 29 27 25 23 21 19 17 15 13 15 17 19 21 23 25 27 29 31 33 35 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PG10454EJ02V0DS 7 µPG2179TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 8 Data Sheet PG10454EJ02V0DS 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 µPG2179TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 VP215 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10454EJ02V0DS 9 µPG2179TB Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PG10454EJ02V0DS µPG2179TB Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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