NJG1301V-C3

NJG1301V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japanese PHS and digital wireless phone. NJG1301V features low operating voltage, high efficiency, and comes with, internal input and output matching circuit and very small SSOP package. This amplifier is operated up to 21dBm output level with very low noise generation. nPACKAGE OUTLINE NJG1301V nFEATURES lLow operating voltage +3.0V typ. lLow current consumption 185mA typ. @f=1.9GHz, Pout=21dBm lLow distortion (ACP) -60dBc typ. @f=1.9GHz, Pout=21dBm lReduction of redact parasitic oscillation lInput and output internal matching circuits lPackage SSOP14 nPIN CONFIGURATION V Type (Top View) 1 2 3 4 5 6 7 14 13 12 11 10 9 8 Pin connection 1.RFin 8.RFout 2.GND 9.GND 3.VGG1 10.VDD2 4.GND 11.GND 5.VGG2 12.VDD1 6.GND 13.GND 7.GND 14.GND -1- NJG1301V nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Gate Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD1,VDD2 VGG1,VGG2 Pin PD Topr Tstg CONDITIONS VGG1,VGG2 =-0.9V VDD1,VDD2=-3.0V VDD1,VDD2=-3.0V, VGG1,VGG2 =-0.9V At on PCB boad (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6 V -4 V 10 dBm 600 mW -30~+85 °C -40~+150 °C nELECTRICAL CHARACTERISTICS PARAMETER Operating Freq. Drain Voltage Gate Voltage Idle Current *1 Operating Current *1 Gate Current *2 Small Signal Gain Gain Flatness Pout at 1dB Gain Compression point Adjacent Channel Leakage Power 1 Adjacent Channel Leakage Power 2 Input VSWR Load VSWR Tolerance SYMBOL freq VDD1,2 VGG1,2 Iidle IDD IGG Gain Gflat P-1dB Pacp1 Pacp2 VSWRi CONDITIONS VDD1,2=3.0V VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V, RF No signal VDD1,2=3.0V, Pout=21dBm VDD1,2=3.0V, Pout=21dBm VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V VDD1,2=3.0V, Pout=21dBm offset=600kHz, Pin; π/4 DQPSK VDD1,2=3.0V, Pout=21dBm offset=900kHz, Pin; π/4 DQPSK VDD1,2=3.0V VDD1,2=3.0V, Pout=21dBm Load VSWR=4:1, All phase MIN 1.89 2.9 -1.25 165 170 -150 20 0 21 (Ta=25°C, Zs=Zl=50Ω) TYP MAX UNITS 1.92 GHz 3.0 5.0 V -0.9 -0.6 V 170 175 mA 185 195 mA -70 uA 23 26 dB 0.5 1.0 dB 22 -60 -65 -55 -60 dBm dBc dBc 2.2 Parasitic Osc. vs Fundamental Signal Level -60dBc Max. *1: Total current of VDD1 terminal and VDD2 terminal *2: Total current of VGG1 terminal and VGG2 terminal -2- NJG1301V nTYPICAL CHARACTERISTICS Gain vs. Frequency (V =3.0V, I =170mA, V DD DD GG =-0.71V, T =25 C ) a o 40 30 Gain (dB) 20 10 0 -10 0.0 1.0 2.0 Frequency f (GHz) 3.0 P -50 acp vs. Operating Current vs. V (P out DD =21dBm ,f=1.9GHz, T =25 C) a o (V 250 Operating Current, Gate Current vs. Input Power o DD =3.0V, I idle =170mA, f=1.9GHz ,T a =25 C) 10 V =2.9V (mA) -55 DD I 200 DD (dBc) Operating Current I acp 3.3V -65 5.0V -70 4.0V -75 140 P I 150 GG -10 100 -20 -10 -5 0 Input Power Pin (dBm) 5 10 150 160 170 180 DD 190 200 Operating Current I (mA) Gain, Pacp vs. Ambient Temperature (V 28 DD Operating Current vs. Ambient Temperature (VDD=3.0V, idle=170mA, P =21dBm, f=1.9GHz) I out 190 =3.0V, I idle =170mA, P out =21dBm, f=1.9GHz) -55 26 P Gain (dBm) acp Operating Current I (mA) 24 -60 Gain 22 P acp (dBc) DD 185 180 20 -40 -20 0 20 40 o -65 60 80 Ambient Temperature T a ( C) 175 -40 -20 0 20 40 a 60 80 Ambient Temperature T ( oC) Gate Current I GG -60 DD 3.0V 0 ( uA) -3- NJG1301V nTYPICAL CHARACTERISTICS Gain vs. PHS Band Frequency (V =3.0V, I =170mA, V =-0.71V, T =25 C) DD DD GG a o |S |, |S | vs. Frequency 11 22 25 20 (V DD =3.0V, I =170mA, T =25 C) DD a o 24 10 Gain (dB) |S |, |S | (dB) 23 0 |S | 22 11 22 22 -10 |S11| -20 21 20 1.89 -30 1.90 1.91 1.92 0.0 1.0 2.0 3.0 Frequency f (GHz) Frequency f (GHz) Output Power,Total Current vs. Input Power (V 25 DD Output Power,P.A.E. vs. Input Power ( V =3V, f=1.9GHz, T =25 C ) DD a o 25 70 =3V, f=1.9GHz, T =25 C ) a 350 o Output Power @I 20 idle =80mA 300 20 Output Power @I idle =80mA 60 50 60mA 40mA 20mA 60mA 40mA Total Current (mA) 15 10 5 0 -5 -10 -25 -20 -15 -10 -5 0 250 200 150 15 10 5 0 -5 -10 -25 -20 -15 -10 -5 in Output Power P Output Power P 20mA P.A.E. @I =80mA 40 idle 60mA 40mA 20mA 30 20 10 0 0 5 10 Total Current @I =80mA idle 100 50 0 5 10 60mA 40mA 20mA Input Power P in (dBm) Input Power P (dBm) -4- Power Added Efficiency (%) (dBm) out out (dBm) NJG1301V nRECOMMENDED CIRCUIT V TYPE RFin 1 RFin GND VGG (-0.5 ~ -1.2V) IDD=0 @VGG < -2V C3 C1 C2 GND 14 GND VDD1 GND VDD2 GND RFout C1: 1000pF C2: 33pF C3: 1uF C4: 2.2nH 8 RFout L1 C2 C1 C3 C2 C1 VGG1 GND VDD (3.0~5.0V) C1 C2 VGG2 GND 7 GND nRECOMMENDED PCB DESIGN PCB : FR4 t=0.2mm 1uF CAPACITOR MURATA GRM39 Series INDUCTOR TAIYO-YUDEN HK1608 Series 2.2nH 1uF -5- NJG1301V nAPPLICATION CIRCUIT ( NEGATIVE VOLTAGE GENERATOR) +3.0V -3.0V - 10KΩTrimmer Resistance 10uF (7KΩ) VGG (-0.9Vtyp.) 8 7 6 5 + NJU7660 1 2 3 4 (3KΩ) + - 10uF -6- NJG1301V nPACKAGE OUTLINE (SSOP14) Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm :66mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • D o NOT eat or put into mouth. • D o NOT dispose in fire or break up this product. • D o NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages . [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -7-