LMX2119M

LMX2119 1 9 GHz Power Amplifier PRELIMINARY June 1996 LMX2119 1 9 GHz Power Amplifier General Description The LMX2119 1 9 GHz Power Amplifier is a monolithic integrated power amplifier suitable for use in the Digital European Cordless Telecommunications (DECT) system as well as other mobile telephony and wireless communications applications It is fabricated using an advanced Gallium Arsenide technology that allows single supply ( a 3V) operation The LMX2119 consists of two MESFETs cascaded to provide 24 5 dB of power gain The output power at 3 6V is a 26 5 dBm with an input power level of a 2 dBm The input VSWR of the power amplifier remains constant in the ON and OFF state The LMX2119 is available in a 16-pin SOIC surface mount plastic package Features Y Y Y Y Y Single a 3V supply operation Class A bias l30% power added efficiency 24 5 dB power gain a 26 5 dBm output power 50X input output impedance 350 mA current consumption at a 3 6V Applications Y Y Y Y Digital European Cordless Telecommunications (DECT) Portable wireless communications (PCS PCN cordless) Wireless local area networks (WLANs) Other wireless communications systems Functional Block Diagram TL W 12686 – 1 This data sheet contains the design specifications for product development Specifications may change in any manner without notice C1996 National Semiconductor Corporation TL W 12686 RRD-B30M27 Printed in U S A http www national com LMX2119 Connection Diagram Small Outline Package (SOP) TL W 12686 – 2 Top View Order Number LMX2119M See NS Package Number M16A Pin Description Pin No 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin Name NC a VDD1 IO No Connect Description Positive supply voltage VDD1 must equal VDD2 Decoupling capacitors should be placed as close to the pin as possible Ground Ground I RF input to the power amplifier Ground Ground No Connect No Connect Ground Ground O Power amplifier’s RF output Ground Ground Positive supply voltage VDD2 must equal VDD1 Decoupling capacitors should be placed as close to the pin as possible No Connect GND GND RF In GND GND NC NC GND GND RF Out GND GND a VDD2 NC http www national com 2 Absolute Maximum Ratings Supply Voltage (VDD) RF Input Power (PIN) Storage Temperature (TSTG) ESD Rating (Note) 5 5V 6 mW b 40 C to a 150 C k 2 keV Recommended Operating Conditions Supply Voltage VDD1 e VDD2 Operating Temperature (TA) RF Input Power PIN Min 30 b 25 0 Typ 36 a2 Note This device is a high performance RF integrated circuit with an ESD Rating k 2 keV and is ESD sensitive Handling and assembly of this device should only be done at ESD workstations Max 46 a 65 a4 Units V C dBm Electrical Characteristics (The following specifications are guaranteed for VDD1 e VDD2 e 3 6V TA e 25 C 50X system unless otherwise specified ) Symbol Parameter Frequency Range POUT Output Power Isolation PIN e 1 0 mW–2 5 mW PA off (VDD1 e VDD2 e 0V) Conditions Min 1880 25 5 40 02 350 161 141 05 420 201 201 26 5 Value Typ Max 1900 27 5 Unit MHz dBm dB dB mA Frequency Dependency PIN e 1 0 mW–2 5 mW IDD Current Consumption Input VSWR PA On Input VSWR PA Off POUT e 450 mW PIN e 1 6 mW POUT e 450 mW PIN e 1 6 mW VDD1 e VDD2 e 0V PIN e 1 6 mW Load Mismatch (Note 1) VDD1 e VDD2 e 4 6V VSWR e 10 1 PIN e 6 mW Stability (Note 2) PIN e 0–3 mW VDD1 2 e 0 – 4 6V 0 mW k POUT k 450 mW Load VSWR e 10 1 No Degradation in Output Power All Non-Harmonically Related Outputs More Than 60 dB Below Desired Signal Note 1 The device is adjusted to provide maximum load power into a 50X load under stress conditions specified by adjusting VDD1 The device is switched off and a 10 1 load replaces the 50X load The device is switched on and the phase of the 10 1 load is varied through 360 electrical degrees during a 60 second test period The device is switched off and the load is restored to 50X When the device is switched on no change in load power is permitted The pre and post load power measurements are recorded after a 5 minute stabilization period This parameter is not tested in production but is guaranteed by design and characterization Note 2 The device is adjusted to provide 400 mW of load power into a 50X load by changing and recording the value of the supply voltage The device is switched off and a 10 1 load replaces the 50X load The device is switched on and the phase of the 10 1 load is varied through 360 electrical degrees during a 60 second test period The value of VDD1 e VDD2 is adjusted from the initial value to a lower value greater than 0V The phase of the 10 1 load is varied through 360 electrical degrees during a 60 second test period For any value of the supply voltage between 0V and the initial setting the non-harmonically related output signals shall be as specified herein for any electrical phase This parameter is not tested in production but is guaranteed by design and characterization 3 http www national com Typical Application Block Diagram TL W 12686 – 3 Typical Performance Characteristics Output Power and Supply Current vs Input Power Output Power and Supply Current vs Frequency TL W 12686 – 4 TL W 12686 – 5 Input VSWR vs Frequency Power Ramping Characteristic (See Application Circuit) TL W 12686 – 6 TL W 12686 – 7 http www national com 4 Typical Performance Characteristics Output Power and Supply Current vs Supply Voltage (Continued) Power Amplifier Harmonics TL W 12686 – 8 TL W 12686 – 9 Output Power and Supply Current vs Frequency for TA e b40 C Output Power and Supply Current vs Frequency for TA e a 75 C TL W 12686 – 10 TL W 12686 – 11 Output Power and Supply Current vs Temperature Maximum Operating Temperature Chart (50% Duty Cycle) TL W 12686 – 12 TL W 12686 – 13 5 http www national com LMX2119 1 9 GHz Power Amplifier Physical Dimensions inches (millimeters) unless otherwise noted JEDEC 16-Lead (0 150 Wide) Small Outline Molded Package (M) Order Number LMX2119M For Tape and Reel (2500 Units per Reel) Order Number LMX2119MX NS Package Number M16A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation Americas Tel 1(800) 272-9959 Fax 1(800) 737-7018 Email support nsc com 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness http www national com National Semiconductor Europe Fax a49 (0) 180-530 85 86 Email europe support nsc com Deutsch Tel a49 (0) 180-530 85 85 English Tel a49 (0) 180-532 78 32 Fran ais Tel a49 (0) 180-532 93 58 Italiano Tel a49 (0) 180-534 16 80 National Semiconductor Southeast Asia Fax (852) 2376 3901 Email sea support nsc com National Semiconductor Japan Ltd Tel 81-3-5620-7561 Fax 81-3-5620-6179 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications