74AUP2G132

74AUP2G132 Low-power dual 2-input NAND Schmitt trigger Rev. 03 — 15 December 2008 Product data sheet 1. General description The 74AUP2G132 provides the dual 2-input NAND Schmitt trigger function which accept standard input signals. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down. The inputs switch at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT− is defined as the input hysteresis voltage VH. 2. Features I Wide supply voltage range from 0.8 V to 3.6 V I High noise immunity I ESD protection: N HBM JESD22-A114E Class 3A exceeds 5000 V N MM JESD22-A115-A exceeds 200 V N CDM JESD22-C101C exceeds 1000 V I Low static power consumption; ICC = 0.9 µA (maximum) I Latch-up performance exceeds 100 mA per JESD 78 Class II I Inputs accept voltages up to 3.6 V I Low noise overshoot and undershoot < 10 % of VCC I IOFF circuitry provides partial Power-down mode operation I Multiple package options I Specified from −40 °C to +85 °C and −40 °C to +125 °C 3. Applications I Wave and pulse shaper I Astable multivibrator I Monostable multivibrator NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 4. Ordering information Table 1. Ordering information Package Temperature range Name 74AUP2G132DC 74AUP2G132GT 74AUP2G132GD 74AUP2G132GM −40 °C to +125 °C −40 °C to +125 °C −40 °C to +125 °C −40 °C to +125 °C VSSOP8 XSON8 XSON8U XQFN8U Description Version plastic very thin shrink small outline package; 8 leads; SOT765-1 body width 2.3 mm plastic extremely thin small outline package; no leads; SOT833-1 8 terminals; body 1 × 1.95 × 0.5 mm plastic extremely thin small outline package; no leads; SOT996-2 8 terminals; UTLP based; body 3 × 2 × 0.5 mm plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 × 1.6 × 0.5 mm SOT902-1 Type number 5. Marking Table 2. Marking codes Marking code aE2 aE2 aE2 aE2 Type number 74AUP2G132DC 74AUP2G132GT 74AUP2G132GD 74AUP2G132GM 6. Functional diagram 1A 1Y 1B & 2A 2Y 2B 001aah880 001aah881 A & B 001aac532 Y Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate) 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 2 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 7. Pinning information 7.1 Pinning 74AUP2G132 1A 1 8 VCC 1B 2 7 1Y 74AUP2G132 2Y 1A 1B 2Y GND 1 2 3 4 001aaf164 3 6 2B 8 7 6 5 VCC 1Y 2B 2A GND 4 5 2A 001aaf165 Transparent top view Fig 4. Pin configuration SOT765-1 (VSSOP8) Fig 5. Pin configuration SOT833-1 (XSON8) 74AUP2G132 terminal 1 index area 1Y 1 VCC 8 74AUP2G132 1A 1B 2Y GND 1 2 3 4 8 7 6 5 VCC 7 1A 2B 1Y 2B 2A 2A 2 6 1B 3 4 5 2Y GND 001aaf166 001aaj264 Transparent top view Transparent top view Fig 6. Pin configuration SOT996-2 (XSON8U) Fig 7. Pin configuration SOT902-1 (XQFN8U) 7.2 Pin description Table 3. Symbol 1A, 2A 1B, 2B GND 1Y, 2Y VCC Pin description Pin SOT765-1, SOT833-1 and SOT996-2 1, 5 2, 6 4 7, 3 8 SOT902-1 7, 3 6, 2 4 1, 5 8 data input data input ground (0 V) data output supply voltage Description 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 3 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 8. Functional description Table 4. Input nA L L H H [1] Function table[1] Output nB L H L H nY H H H L H = HIGH voltage level; L = LOW voltage level. 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC IIK VI IOK VO IO ICC IGND Tstg Ptot [1] [2] Parameter supply voltage input clamping current input voltage output clamping current output voltage output current supply current ground current storage temperature total power dissipation Conditions VI < 0 V [1] Min −0.5 −0.5 [1] Max +4.6 −50 +4.6 −50 +4.6 ±20 50 −50 +150 250 Unit V mA V mA V mA mA mA °C mW VO < 0 V Active mode and Power-down mode VO = 0 V to VCC −0.5 −65 Tamb = −40 °C to +125 °C [2] - The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. For VSSOP8 packages: above 110 °C the value of Ptot derates linearly with 8.0 mW/K. For XSON8, XSON8U and XQFN8U packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 10. Recommended operating conditions Table 6. Symbol VCC VI VO Tamb Operating conditions Parameter supply voltage input voltage output voltage ambient temperature Active mode Power-down mode; VCC = 0 V Conditions Min 0.8 0 0 0 −40 Max 3.6 3.6 VCC 3.6 +125 Unit V V V V °C 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 4 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = 25 °C VOH HIGH-level output voltage VI = VT+ or VT− IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = VT+ or VT− IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF ∆IOFF ICC ∆ICC CI CO VOH input leakage current power-off leakage current additional power-off leakage current supply current additional supply current input capacitance output capacitance HIGH-level output voltage VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V VI = GND or VCC; VCC = 0 V to 3.6 V VO = GND; VCC = 0 V VI = VT+ or VT− IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V 74AUP2G132_3 Conditions Min Typ Max Unit VCC − 0.1 1.11 1.32 2.05 1.9 2.72 2.6 [1] 1.1 1.7 0.1 0.3 × VCC 0.31 0.31 0.31 0.44 0.31 0.44 ±0.1 ±0.2 ±0.2 0.5 40 - V V V V V V V V V V V V V V V V µA µA µA µA µA pF pF 0.75 × VCC - - Tamb = −40 °C to +85 °C VCC − 0.1 0.7 × VCC 1.03 1.30 1.97 1.85 2.67 2.55 V V V V V V V V © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 5 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VOL LOW-level output voltage Conditions VI = VT+ or VT− IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF ∆IOFF ICC ∆ICC input leakage current power-off leakage current additional power-off leakage current supply current additional supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V VI = VT+ or VT− IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = VT+ or VT− IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF input leakage current power-off leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V 0.11 0.41 0.39 0.36 0.50 0.36 0.50 ±0.75 ±0.75 V V V V V V V µA µA 0.33 × VCC V VCC − 0.11 0.6 × VCC 0.93 1.17 1.77 1.67 2.40 2.30 V V V V V V V V [1] Min - Typ - Max 0.1 0.3 × VCC 0.37 0.35 0.33 0.45 0.33 0.45 ±0.5 ±0.5 ±0.6 0.9 50 Unit V V V V V V V V µA µA µA µA µA Tamb = −40 °C to +125 °C VOH HIGH-level output voltage 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 6 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter ∆IOFF ICC ∆ICC additional power-off leakage current supply current additional supply current Conditions VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V [1] Min - Typ - Max ±0.75 1.4 75 Unit µA µA µA [1] One input at VCC − 0.6 V, other input at VCC or GND. 12. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 9. Symbol Parameter Conditions Tamb = 25 °C Min CL = 5 pF tpd propagation delay nA or nB to nY; see Figure 8 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 10 pF tpd propagation delay nA or nB to nY; see Figure 8 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 15 pF tpd propagation delay nA or nB to nY; see Figure 8 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [2] [2] [2] Tamb = −40 °C to +125 °C Unit Min Max Max (85 °C) (125 °C) Typ[1] Max 2.6 2.2 1.9 1.7 1.6 22.5 6.3 4.6 3.9 3.2 2.9 13.4 8.2 6.6 5.3 4.7 2.4 1.9 1.7 1.5 1.4 15.1 9.7 7.9 6.2 5.6 16.6 10.7 8.7 6.8 6.2 ns ns ns ns ns ns 3.0 2.5 2.3 2.1 2.0 26.1 7.2 5.2 4.5 3.8 3.5 15.4 9.3 7.5 6.1 5.5 2.7 2.2 2.0 1.8 1.8 17.3 11.0 9.0 7.2 6.5 19.0 12.1 9.9 7.9 7.2 ns ns ns ns ns ns 3.3 2.8 2.6 2.3 2.2 29.6 8.0 5.8 5.0 4.2 3.9 17.2 10.4 8.3 6.7 6.1 3.0 2.5 2.3 2.1 2.0 19.4 12.3 10.0 7.9 7.3 21.3 13.5 11.0 8.7 8.0 ns ns ns ns ns ns 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 7 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 9. Symbol Parameter Conditions Tamb = 25 °C Min CL = 30 pF tpd propagation delay nA or nB to nY; see Figure 8 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 5 pF, 10 pF, 15 pF and 30 pF CPD power dissipation capacitance fi = 1 MHz; VI = GND to VCC VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [1] [2] [3] All typical values are measured at nominal VCC. tpd is the same as tPLH and tPHL. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. [3] [2] Tamb = −40 °C to +125 °C Unit Min Max Max (85 °C) (125 °C) Typ[1] Max 4.3 3.6 3.2 3.0 2.8 39.9 10.2 7.3 6.3 5.3 5.0 22.6 13.3 10.6 8.5 7.8 3.8 3.2 2.9 2.7 2.7 25.4 15.8 12.8 10.1 9.2 27.9 17.4 14.1 11.1 10.1 ns ns ns ns ns ns - 2.6 2.9 3.0 3.2 3.8 4.4 - - - - pF pF pF pF pF pF 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 8 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 13. Waveforms VT+ nA, nB input VT− tPHL VOH nY output VOL VM 001aaj265 VM tPLH Measurement points are given in Table 9. Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. Fig 8. Table 9. VCC The data input (nA or nB) to output (nY) propagation delays Measurement points Output VM 0.5 × VCC Input VM 0.5 × VCC VI VCC tr = tf ≤ 3.0 ns Supply voltage 0.8 V to 3.6 V VCC VEXT 5 kΩ G VI VO DUT RT CL RL 001aac521 Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 9. Table 10. VCC Load circuitry for switching times Test data Load CL 5 pF, 10 pF, 15 pF and 30 pF RL[1] 5 kΩ or 1 MΩ VEXT tPLH, tPHL open tPZH, tPHZ GND tPZL, tPLZ 2 × VCC Supply voltage 0.8 V to 3.6 V [1] For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ. 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 9 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 14. Transfer characteristics Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 9. Symbol Parameter Conditions Tamb = 25 °C Min VT+ positive-going threshold voltage see Figure 10 and Figure 11 VCC = 0.8 V VCC = 1.1 V VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 3.0 V VT− negative-going threshold voltage see Figure 10 and Figure 11 VCC = 0.8 V VCC = 1.1 V VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 3.0 V VH hysteresis voltage (VT+ − VT−); see Figure 10, Figure 11, Figure 12 and Figure 13 VCC = 0.8 V VCC = 1.1 V VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 3.0 V 0.07 0.08 0.18 0.27 0.53 0.79 0.50 0.46 0.56 0.66 0.92 1.31 0.07 0.08 0.18 0.27 0.53 0.79 0.50 0.46 0.56 0.66 0.92 1.31 0.50 0.46 0.56 0.66 0.92 1.31 V V V V V V 0.10 0.26 0.39 0.47 0.69 0.88 0.60 0.65 0.75 0.84 1.04 1.24 0.10 0.26 0.39 0.47 0.69 0.88 0.60 0.65 0.75 0.84 1.04 1.24 0.60 0.65 0.75 0.84 1.04 1.24 V V V V V V 0.30 0.53 0.74 0.91 1.37 1.88 0.60 0.90 1.11 1.29 1.77 2.29 0.30 0.53 0.74 0.91 1.37 1.88 0.60 0.90 1.11 1.29 1.77 2.29 0.62 0.92 1.13 1.31 1.80 2.32 V V V V V V Typ Max Tamb = −40 °C to +125 °C Min Max (85 °C) Max (125 °C) Unit 15. Waveforms transfer characteristics VO VT+ VI VT− VH VO VH VT− VT+ VI mna207 mna208 VT+ and VT− limits at 70 % and 20 %. Fig 10. Transfer characteristic 74AUP2G132_3 Fig 11. Definition of VT+, VT− and VH © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 10 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 240 ICC (µA) 160 001aad691 80 0 0 0.4 0.8 1.2 1.6 VI (V) 2.0 VCC = 3.0 V. Fig 12. Typical transfer characteristics; VCC = 1.8 V 1200 ICC (µA) 800 001aad692 400 0 0 1.0 2.0 VI (V) 3.0 VCC = 3.0 V. Fig 13. Typical transfer characteristics; VCC = 3.0 V 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 11 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 16. Application information The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula: Padd = fi × (tr × ∆ICC(AV) + tf × ∆ICC(AV)) × VCC where: Padd = additional power dissipation (µW); fi = input frequency (MHz); tr = input rise time (ns); 10 % to 90 %; tf = input fall time (ns); 90 % to 10 %; ∆ICC(AV) = average additional supply current (µA). Average ∆ICC(AV) differs with positive or negative input transitions, as shown in Figure 14. 001aad027 0.3 ∆ICC(AV) (mA) (1) 0.2 (2) 0.1 0 0.8 1.8 2.8 VCC (V) 3.8 (1) Positive-going edge. (2) Negative-going edge. Linear change of VI between 0.8 V and 2.0 V. All values given are typical, unless otherwise specified. Fig 14. Average ICC as a function of VCC 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 12 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 17. Package outline VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1 D E A X c y HE vMA Z 8 5 Q A pin 1 index A2 A1 (A3) θ Lp L 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 0.15 0.00 A2 0.85 0.60 A3 0.12 bp 0.27 0.17 c 0.23 0.08 D(1) 2.1 1.9 E(2) 2.4 2.2 e 0.5 HE 3.2 3.0 L 0.4 Lp 0.40 0.15 Q 0.21 0.19 v 0.2 w 0.13 y 0.1 Z(1) 0.4 0.1 θ 8° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT765-1 REFERENCES IEC JEDEC MO-187 JEITA EUROPEAN PROJECTION ISSUE DATE 02-06-07 Fig 15. Package outline SOT765-1 (VSSOP8) 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 13 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm SOT833-1 1 2 3 b 4 4× L (2) L1 e 8 e1 7 e1 6 e1 5 8× (2) A A1 D E terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max 0.5 A1 max 0.04 b 0.25 0.17 D 2.0 1.9 E 1.05 0.95 e 0.6 e1 0.5 L 0.35 0.27 L1 0.40 0.32 1 scale 2 mm Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT833-1 REFERENCES IEC --JEDEC MO-252 JEITA --EUROPEAN PROJECTION ISSUE DATE 07-11-14 07-12-07 Fig 16. Package outline SOT833-1 (XSON8) 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 14 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 x 2 x 0.5 mm SOT996-2 D B A E A A1 detail X terminal 1 index area e1 L1 1 e b 4 v w M M CAB C C y1 C y L2 L 8 5 X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 0.05 0.00 b 0.35 0.15 D 2.1 1.9 E 3.1 2.9 e 0.5 e1 1.5 L 0.5 0.3 L1 0.15 0.05 L2 0.6 0.4 v 0.1 w 0.05 y 0.05 y1 0.1 OUTLINE VERSION SOT996-2 REFERENCES IEC --JEDEC JEITA --- EUROPEAN PROJECTION ISSUE DATE 07-12-18 07-12-21 Fig 17. Package outline SOT996-2 (XSON8U) 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 15 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger XQFN8U: plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 x 1.6 x 0.5 mm SOT902-1 D terminal 1 index area B A E A A1 detail X L1 L e 4 e ∅v M C A B ∅w M C 5 C y1 C y 3 metal area not for soldering 2 6 b e1 e1 7 1 terminal 1 index area 8 X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 0.05 0.00 b 0.25 0.15 D 1.65 1.55 E 1.65 1.55 e 0.55 e1 0.5 L 0.35 0.25 L1 0.15 0.05 v 0.1 w 0.05 y 0.05 y1 0.05 OUTLINE VERSION SOT902-1 REFERENCES IEC --JEDEC MO-255 JEITA --- EUROPEAN PROJECTION ISSUE DATE 05-11-25 07-11-14 Fig 18. Package outline SOT902-1 (XQFN8U) 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 16 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 18. Abbreviations Table 12. Acronym CDM CMOS DUT ESD HBM MM TTL Abbreviations Description Charged Device Model Complementary Metal-Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model Machine Model Transistor-Transistor Logic 19. Revision history Table 13. Revision history Release date 20081215 Data sheet status Product data sheet Product data sheet Product data sheet Change notice Supersedes 74AUP2G132_2 74AUP2G132_1 Document ID 74AUP2G132_3 Modifications: 74AUP2G132_2 74AUP2G132_1 • Added type number 74AUP2G132GD (XSON8U package). 20080314 20061018 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 17 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 20. Legal information 20.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 20.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 20.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 20.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 21. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 74AUP2G132_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 18 of 19 NXP Semiconductors 74AUP2G132 Low-power dual 2-input NAND Schmitt trigger 22. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 13 14 15 16 17 18 19 20 20.1 20.2 20.3 20.4 21 22 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Transfer characteristics. . . . . . . . . . . . . . . . . . 10 Waveforms transfer characteristics . . . . . . . . 10 Application information. . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 December 2008 Document identifier: 74AUP2G132_3