AFIC31025NR1

NXP Semiconductors Technical Data Document Number: AFIC31025N Rev. 0, 10/2017 RF LDMOS Integrated Power Amplifiers AFIC31025N AFIC31025GN The AFIC31025N integrated circuit is designed with on--chip matching that makes it usable from 2400 to 3100 MHz. This multi--stage device is designed to support CW and pulse applications. Typical Performance: In 2400–3100 MHz reference circuit, VDD = 32 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 2400–2500 CW 25 30.0 45.5 2700–3100 Pulse (300 sec, 15% Duty Cycle) 25 Peak 22.0 40.0 2400–3100 MHz, 25 W PEAK, 32 V AIRFAST RF LDMOS INTEGRATED POWER AMPLIFIERS TO--270WB--17 PLASTIC AFIC31025N Features  On--chip matching (50 ohm input, DC blocked)  Integrated quiescent current temperature compensation with enable/disable function (1)  Qualified up to a maximum of 32 VDD operation  Integrated ESD protection TO--270WBG--17 PLASTIC AFIC31025GN Typical Applications  Civil S--Band radar  Weather radar  Maritime radar  Industrial heating  Data links  Plasma generation VDS1A VBWA RFinA VGS1A VGS2A VGS1B VGS2B RFout1/VDS2A Quiescent Current Temperature Compensation (1) Quiescent Current Temperature Compensation (1) RFinB RFout2/VDS2B VDS1B VBWB Figure 1. Functional Block Diagram VDS1A VGS2A VGS1A RFinA N.C. GND GND N.C. RFinB VGS1B VGS2B VDS1B 1 2 3 4 5 6 7 8 9 10 11 12 Carrier 17 16 15 14 13 Peaking VBWA RFout1/VDS2A GND RFout2/VDS2B VBWB (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.  2017 NXP B.V. RF Device Data NXP Semiconductors AFIC31025N AFIC31025GN 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1) TJ –40 to +225 C Input Power Pin 20 dBm Symbol Value (2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, DC, Total PD = 29.3 W Stage 1, 28 Vdc, PD = 3.8 W Stage 2, 28 Vdc, PD = 25.5 W RJC C/W 5.85 1.92 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Charge Device Model (per JESD22--C101) II Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.0 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 2.5 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1(A+B) = 59 mAdc) VGS(Q) — 2.0 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1(A+B) = 59 mAdc, Measured in Functional Test) VGG(Q) 4.6 5.3 6.1 Vdc Characteristic Stage 1 -- Off Characteristics (3) Stage 1 -- On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. 3. Each side of device measured separately. (continued) AFIC31025N AFIC31025GN 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.0 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 16 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2(A+B) = 157 mAdc) VGS(Q) — 1.9 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2(A+B) = 157 mAdc, Measured in Functional Test) VGG(Q) 4.3 5.0 5.8 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 200 mAdc) VDS(on) 0.1 0.22 1.5 Vdc Stage 2 -- Off Characteristics (1) Stage 2 -- On Characteristics 1. Each side of device measured separately. (continued) AFIC31025N AFIC31025GN RF Device Data NXP Semiconductors 3 Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In NXP Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 59 mA, IDQ2(A+B) = 157 mA, Pout = 3.2 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 30.5 31.9 34.5 dB Power Added Efficiency PAE 18.0 19.7 — % Load Mismatch (In NXP Production Test Fixture, 50 ohm system) IDQ1(A+B) = 59 mA, IDQ2(A+B) = 157 mA, f = 2600 MHz VSWR 10:1 at 32 Vdc, 36 W CW Output Power (3 dB Input Overdrive from 25 W CW Rated Power) No Device Degradation Table 6. Ordering Information Device AFIC31025NR1 AFIC31025GNR1 Tape and Reel Information R1 Suffix = 500 Units, 44 mm Tape Width, 13--Reel Package TO--270WB--17 TO--270WBG--17 1. Part internally input and output matched. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. AFIC31025N AFIC31025GN 4 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS AFIC31025N AFIC31025GN RF Device Data NXP Semiconductors 5 AFIC31025N AFIC31025GN 6 RF Device Data NXP Semiconductors AFIC31025N AFIC31025GN RF Device Data NXP Semiconductors 7 AFIC31025N AFIC31025GN 8 RF Device Data NXP Semiconductors AFIC31025N AFIC31025GN RF Device Data NXP Semiconductors 9 AFIC31025N AFIC31025GN 10 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION Refer to the following resources to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers  AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family  AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Oct. 2017 Description  Initial release of data sheet AFIC31025N AFIC31025GN RF Device Data NXP Semiconductors 11 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2017 NXP B.V. AFIC31025N AFIC31025GN Document Number: AFIC31025N Rev. 0, 10/2017 12 RF Device Data NXP Semiconductors