AFM906NT1

NXP Semiconductors Technical Data Document Number: AFM906N Rev. 2, 11/2018 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET AFM906N Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Wideband Performance (In 440–520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 440–520 (1,2) 0.16 16.2 62.0 6.5 136–941 MHz, 6.0 W, 7.5 V WIDEBAND AIRFAST RF POWER LDMOS TRANSISTOR Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps (B) D (%) Pout (W) 520 (3) 20.3 70.8 6.8 Load Mismatch/Ruggedness Frequency (MHz) 520 (3) Signal Type CW DFN 4  6 VSWR Pin (dBm) Test Voltage > 65:1 at all Phase Angles 21 (3 dB Overdrive) 10.8 Result No Device Degradation 1. Measured in 440–520 MHz broadband reference circuit (page 6). 2. The values shown are the minimum measured performance numbers across the indicated frequency range. 3. Measured in 520 MHz narrowband production test fixture (page 9). Features         Characterized for operation from 136 to 941 MHz Unmatched input and output allowing wide frequency range utilization Integrated ESD protection Integrated stability enhancements Wideband — full power across the band Exceptional thermal performance Extreme ruggedness High linearity for: TETRA, SSB N.C. 2 16 N.C. 15 N.C. Gate 3 14 Drain Gate 4 13 Drain Gate 5 12 Drain N.C. 1 Gate 6 11 Drain N.C. 7 N.C. 8 10 N.C. 9 N.C. (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Typical Applications     Output stage VHF band handheld radio Output stage UHF band handheld radio Output stage for 700–800 MHz handheld radio Generic 6 W driver for ISM and broadcast final stage transistors  2016, 2018 NXP B.V. RF Device Data NXP Semiconductors AFM906N 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +30 Vdc Gate--Source Voltage VGS --6.0, +12 Vdc Operating Voltage VDD 0 to 12.5 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C Operating Junction Temperature Range (1,2) TJ --40 to +150 C Total Device Dissipation @ TC = 25C Derate above 25C PD 65.8 0.53 W W/C Symbol Value (2,3) Unit RJC 1.9 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78C, 6 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C, passes 1000 V Machine Model (per EIA/JESD22--A115) A, passes 50 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Zero Gate Voltage Drain Leakage Current (VDS = 7.5 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 78 Adc) VGS(th) 1.8 2.15 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.78 Adc) VDS(on) — 0.11 — Vdc Forward Transconductance (VDS = 7.5 Vdc, ID = 4.7 Adc) gfs — 4.4 — S Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. (continued) AFM906N 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.7 — pF Output Capacitance (VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 39.8 — pF Input Capacitance (VDS = 7.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz) Ciss — 68.9 — pF Dynamic Characteristics Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 18 dBm, f = 520 MHz Common--Source Amplifier Output Power Pout — 6.8 — W D — 70.8 — % Drain Efficiency Load Mismatch/Ruggedness (In NXP Test Narrowband Production Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR 520 CW > 65:1 at all Phase Angles Pin (dBm) Test Voltage, VDD Result 10.8 No Device Degradation 21 (3 dB Overdrive) Table 6. Ordering Information Device AFM906NT1 Tape and Reel Information T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel Package DFN 4  6 AFM906N RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 100 C, CAPACITANCE (pF) Ciss Coss Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 10 Crss 1 0 2 4 6 8 10 12 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage MTTF (HOURS) 109 VDD = 7.5 Vdc ID = 0.9 Amps 108 1.2 Amps 107 1.4 Amps 106 90 100 110 120 130 140 150 160 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com/RF/calculators. Figure 3. MTTF versus Junction Temperature – CW AFM906N 4 RF Device Data NXP Semiconductors 440–520 MHz UHF BROADBAND REFERENCE CIRCUIT Table 7. 440–520 MHz UHF Broadband Performance (In NXP UHF Broadband Reference Circuit, 50 ohm system) VDD = 7.5 Vdc, IDQ = 150 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 440 0.1 18.1 61.2 6.5 480 0.1 18.1 66.0 6.5 520 0.11 17.8 66.5 6.5 AFM906N RF Device Data NXP Semiconductors 5 440–520 MHz UHF BROADBAND REFERENCE CIRCUIT — 0.83  1.88 (21.1 mm  47.8 mm) C1 J1 B1 L1 C15 C7 C8 C6 C9 C14 C10 C5 L6 C2 L3 R1 L2 D84468 L4 C3 C13 C11 C4 C12 L5 Q1 AFM906N Rev. 0 Figure 4. AFM906N UHF Broadband Reference Circuit Component Layout — 440–520 MHz Table 8. AFM906N UHF Broadband Reference Circuit Component Designations and Values — 440–520 MHz Part Description Part Number Manufacturer B1 30 , 6 A Ferrite Bead MPZ2012S300AT000 TDK C1, C5, C15 100 pF Chip Capacitors ATC600F101JT250XT ATC C2, C11 15 pF Chip Capacitors ATC600F150JT250XT ATC C3 39 pF Chip Capacitor ATC600F390JT250XT ATC C4, C12 47 pF Chip Capacitors ATC600F470JT250XT ATC C6, C7 0.1 F Chip Capacitors GRM21BR71H104KA01B Murata C8 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata C9 200 pF Chip Capacitor GQM2195C2A201GB12D Murata C10 2.2 F Chip Capacitor GRM31CR71H225KA88L Murata C13 22 pF Chip Capacitor ATC600F220JT250XT ATC C14 5.1 pF Chip Capacitor ATC600F5R1BT250XT ATC J1 Right-Angle Breakaway Headers (3 Pins) 22-28-8360 Molex L1, L2 5.5 nH Inductors 0806SQ-5N5JLC Coilcraft L3, L6 8.1 nH Inductors 0908SQ-8N1JLC Coilcraft L4 6 nH Inductor 0806SQ-6N0JLC Coilcraft L5 1.65 nH Inductor 0906-2JLC Coilcraft Q1 RF Power LDMOS Transistor AFM906N NXP R1 10 , 1/4 W Chip Resistor CRCW120610R0JNEA Vishay PCB 0.020”, r = 4.8, Shengyi S1000-2 D84468 MTL AFM906N 6 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 440–520 MHz UHF BROADBAND REFERENCE CIRCUIT 90 21 19 70 18 60 Gps 17 50 40 16 15 9 Pout 14 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 80 D D, DRAIN EFFICIENCY (%) 20 8 7 13 6 12 VDD = 7.5 Vdc, Pin = 0.16 W, IDQ = 150 mA 11 440 460 480 500 420 5 540 520 f, FREQUENCY (MHz) Figure 5. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 7.5 Vdc 12 1.2 10 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) VDD = 7.5 Vdc, f = 480 MHz Pin = 22 dBm 8 Pin = 19 dBm 6 4 2 0 0 1 2 0.8 3 4 Pin = 22 dBm 0.6 Pin = 19 dBm 0.4 0.2 0 Detail A VDD = 7.5 Vdc, f = 480 MHz 1.0 0.5 0 1.5 1 2 2.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 5 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Gps, POWER GAIN (dB) 20 18 16 440 MHz 10 8 0.01 480 MHz 520 MHz Gps 440 MHz 20 12 440 MHz 480 MHz 520 MHz 60 40 f = 520 MHz 480 MHz 14 12 80 D 8 Pout 4 VDD = 7.5 Vdc, IDQ = 150 mA 0.1 1 Pout, OUTPUT POWER (WATTS) 22 D, DRAIN EFFICIENCY (%) Figure 6. Output Power versus Gate--Source Voltage 0 Pin, INPUT POWER (WATTS) Figure 7. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFM906N RF Device Data NXP Semiconductors 7 440–520 MHz UHF BROADBAND REFERENCE CIRCUIT Zo = 10  f = 520 MHz Zsource f = 440 MHz Zload f = 520 MHz f = 440 MHz f MHz Zsource  Zload  440 1.3 + j4.8 2.4 + j2.7 450 1.3 + j5.0 2.5 + j2.8 460 1.4 + j5.1 2.6 + j3.0 470 1.4 + j5.3 2.7 + j3.2 480 1.4 + j5.4 2.8 + j3.3 490 1.4 + j5.6 2.9 + j3.4 500 1.4 + j5.7 2.9 + j3.4 510 1.4 + j5.8 3.0 + j3.5 520 1.3 + j6.0 3.1 + j3.5 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource 50  Zload Figure 8. UHF Broadband Series Equivalent Source and Load Impedance — 440–520 MHz AFM906N 8 RF Device Data NXP Semiconductors 520 MHz NARROWBAND PRODUCTION TEST FIXTURE — 3  5 (7.6 cm  12.7 cm) B1 C2 C1 C13 C3 C14 C4 C7 C15 C12 R6 C5 C6 C9 L2 R1 R2 R3 R4 R5 C11 L3 C8 C10 AFM906N Rev. 0 D75391 Figure 9. AFM906N Narrowband Test Circuit Component Layout — 520 MHz Table 9. AFM906N Narrowband Test Circuit Component Designations and Values — 520 MHz Part Description Part Number Manufacturer B1 Short RF Bead 2743019447 Fair-Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C14 0.1 F Chip Capacitors CDR33BX104AKWS7370 Kemet C3, C13 0.01 F Chip Capacitors C0805C103K5RACTU Kemet C4, C12 180 pF Chip Capacitors ATC100B181JT300XT ATC C5 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C6, C11 15 pF Chip Capacitors ATC100B150JT500XT ATC C7 13 pF Chip Capacitor ATC100B130JT500XT ATC C8, C9 16 pF Chip Capacitors ATC100B160JT500XT ATC C10 2 pF Chip Capacitor ATC100B2R0BT500XT ATC C15 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp L2 8 nH Inductor, 3 Turns A03TKLC Coilcraft L3 5 nH Inductor, 2 Turns A02TKLC Coilcraft R1, R2, R3, R4, R5 1.5 , 1/4 W Chip Resistors RC1206FR-071R5L Yageo R6 27 , 1/4 W Chip Resistor CRCW120627R0FKEA Vishay PCB Rogers RO4350B, 0.030”, er = 3.66 D75391 MTL AFM906N RF Device Data NXP Semiconductors 9 TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND PRODUCTION TEST FIXTURE 10 Pout, OUTPUT POWER (WATTS) VDD = 7.5 Vdc, f = 520 MHz 8 Pin = 18 dBm 6 Pin = 15 dBm 4 2 0 1 1.5 2.5 2 3.5 3 4 VGS, GATE--SOURCE VOLTAGE (VOLTS) Gps, POWER GAIN (dB) 21 90 D 70 20 50 19 30 18 10 Gps 17 16 10 8 Pout 15 6 14 4 13 12 0.00 VDD = 7.5 Vdc, lDQ = 100 mA, f = 520 MHz 0.05 0.10 0.15 0.20 0.25 0.30 2 Pout, OUTPUT POWER (WATTS) 22 D, DRAIN EFFICIENCY (%) Figure 10. Output Power versus Gate--Source Voltage 0 0.35 Pin, INPUT POWER (WATTS) Figure 11. Power Gain, Drain Efficiency, and Output Power versus Input Power AFM906N 10 RF Device Data NXP Semiconductors 520 MHz PRODUCTION TEST FIXTURE f MHz Zsource  Zload  520 1.1 + j2.5 1.9 + j1.5 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 12. Series Equivalent Source and Load Impedance — 520 MHz AFM906N RF Device Data NXP Semiconductors 11 2.00 5.35  2.0 solder pad with thermal via structure. All dimensions in mm. 3.00 5.35 0.56 0.35 10  0.80 4  0.65 Figure 13. PCB Pad Layout for 16--Lead DFN 4  6 AFM906N WLYW Figure 14. Product Marking AFM906N 12 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS AFM906N RF Device Data NXP Semiconductors 13 AFM906N 14 RF Device Data NXP Semiconductors AFM906N RF Device Data NXP Semiconductors 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 July 2016  Initial release of data sheet 1 Aug. 2016  440--520 MHz UHF broadband reference circuit: added performance data and graphs, reference circuit component layout and component designations, pp. 5--8 2 Nov. 2018  Table 1, Max Ratings table, Operating Voltage: changed 7.5 Vdc to 12.5 Vdc to reflect additional qualification data, p. 2  Fig. 12, Series Equivalent Source and Load Impedance — 520 MHz: added to data sheet, p. 11 AFM906N 16 RF Device Data NXP Semiconductors How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. E 2016, 2018 NXP B.V. AFM906N Document Number: RF Device Data AFM906N Rev. 2,Semiconductors 11/2018 NXP 17