NXP Semiconductors
Technical Data
Document Number: AFM907N
Rev. 1, 05/2019
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
AFM907N
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Wideband Performance (In 350–520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW)
Frequency
(MHz) (1)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
350
0.25
15.2
56.6
8.4
435
0.25
15.5
61.5
8.9
520
0.25
15.0
64.2
7.9
136–941 MHz, 8 W, 7.5 V
WIDEBAND
AIRFAST RF POWER LDMOS
TRANSISTOR
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(W)
520 (2)
20.7
73.9
8.4
DFN 4 6
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
520 (2)
CW
VSWR
Pin
(dBm)
Test
Voltage
> 65:1 at all
Phase Angles
21
(3 dB Overdrive)
10.8
Result
N.C. 2
16 N.C.
15 N.C.
No Device
Degradation
Gate 3
14 Drain
Gate 4
13 Drain
Gate 5
12 Drain
Gate 6
11 Drain
N.C. 7
N.C. 8
10 N.C.
9 N.C.
N.C. 1
1. Measured in 350–520 MHz UHF broadband reference circuit (page 5).
2. Measured in 520 MHz narrowband RF test fixture (page 9).
Features
Characterized for operation from 136 to 941 MHz
Unmatched input and output allowing wide frequency range utilization
Integrated ESD protection
Integrated stability enhancements
Wideband — full power across the band
Exceptional thermal performance
Extreme ruggedness
High linearity for: TETRA, SSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Typical Applications
Output stage VHF band handheld radio
Output stage UHF band handheld radio
Output stage for 700–800 MHz handheld radio
2017, 2019 NXP B.V.
RF Device Data
NXP Semiconductors
AFM907N
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +30
Vdc
Gate--Source Voltage
VGS
–6.0, +12
Vdc
Operating Voltage
VDD
0 to 12.5
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature (1,2)
TJ
–40 to +150
C
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
65.7
0.52
W
W/C
Symbol
Value (2,3)
Unit
RJC
1.9
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79C, 7.4 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C, passes 1000 V
Charge Device Model (per JESD22--C101)
C3, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 7.5 Vdc, VGS = 0 Vdc)
IDSS
—
—
2
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 110 Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.1 Adc)
VDS(on)
—
0.12
—
Vdc
gfs
—
9.8
—
S
Reverse Transfer Capacitance
(VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.4
—
pF
Output Capacitance
(VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
55.2
—
pF
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
95.7
—
pF
Characteristic
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 7.5 Vdc, ID = 3 Adc)
Dynamic Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
AFM907N
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Narrowband Performance – 520 MHz (In NXP Narrowband 520 MHz RF Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA,
Pin = 18.5 dBm, f = 520 MHz
Common--Source Amplifier Output Power
Pout
—
8.4
—
W
D
—
73.9
—
%
Drain Efficiency
Load Mismatch/Ruggedness (In NXP Narrowband 520 MHz RF Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
Signal
Type
VSWR
520
CW
> 65:1 at all Phase Angles
Pin
(dBm)
Test Voltage, VDD
Result
10.8
No Device Degradation
21
(3 dB Overdrive)
Table 6. Ordering Information
Device
AFM907NT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel
Package
DFN 4 6
AFM907N
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
Ciss
Coss
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
10
1
Crss
0
2
4
6
8
10
12
14
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
MTTF (HOURS)
109
VDD = 7.5 Vdc
108
ID = 1.1 Amps
1.5 Amps
107
1.8 Amps
106
90
100
110
120
130
140
150
160
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 3. MTTF versus Junction Temperature – CW
AFM907N
4
RF Device Data
NXP Semiconductors
350–520 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 7. 350–520 MHz UHF Broadband Performance (In NXP UHF Broadband Reference Circuit,
50 ohm system) VDD = 7.5 Vdc, IDQ = 200 mA, TA = 25C, CW
Frequency
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
350
0.25
15.2
56.6
8.4
435
0.25
15.5
61.5
8.9
520
0.25
15.0
64.2
7.9
AFM907N
RF Device Data
NXP Semiconductors
5
350--520 MHz UHF BROADBAND REFERENCE CIRCUIT — 0.83 1.88 (21.1 mm 47.8 mm)
J1
C1
C14
C12
C7
C2
C13
C15
B1
C11
C16
L1
L3
L6
C6
C3
R3
D93169
R1
Q1
R2
C4
C10
L4
L2
C8 C9
C5
L5
AFM907N
Rev. 0
Figure 4. AFM907N UHF Broadband Reference Circuit Component Layout — 350–520 MHz
Table 8. AFM907N UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz
Part
Description
Part Number
Manufacturer
B1
30 , 6 A Ferrite Bead
MPZ2012S300AT000
TDK
C1, C12
100 pF Chip Capacitor
ATC600F101JT250XT
ATC
C2
8.2 pF Chip Capacitor
ATC600F8R2BT250XT
ATC
C3, C5
36 pF Chip Capacitor
ATC600F360JT250XT
ATC
C4, C8, C9
27 pF Chip Capacitor
ATC600F270JT250XT
ATC
C6
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C7
0.01 F Chip Capacitor
C0805C103K5RAC
Kemet
C10
18 pF Chip Capacitor
ATC600F180JT250XT
ATC
C11
9.1 pF Chip Capacitor
ATC600F9R1BT250XT
ATC
C13
240 pF Chip Capacitor
ATC600F241JT250XT
ATC
C14
2.2 F Chip Capacitor
GRM31CR71H225KA88L
Murata
C15
4.7 F 50 V Chip Capacitor
GRM31CR71H475KA12L
Murata
C16
0.01 F Chip Capacitor
GRM21BR72A103KA01B
Murata
J1
Right-Angle Breakaway Header (3 Pins)
22-28-8360
Molex
L1, L6
8.9 nH Inductor
0806SQ8N9
Coilcraft
L2
1.65 nH Inductor, 2 Turns
0906-2JLC
Coilcraft
L3, L4
17 nH Inductor
0908SQ17N
Coilcraft
L5
2.55 nH Inductor, 3 Turns
0906-3JLC
Coilcraft
Q1
RF Power LDMOS Transistor
AFM907N
NXP
R1, R2
1.5 , 1/4 W Chip Resistor
RC1206FR-071R5L
Yageo
R3
51 , 1/4 W Chip Resistor
CRCW120651R0FKEA
Vishay
PCB
Shengyi S1000--2, 0.020, r = 4.8
D93169
MTL
AFM907N
6
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND
REFERENCE CIRCUIT
23
50
40
19
17
30
Gps
15
14
12
13
11
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
60
D
21
D, DRAIN
EFFICIENCY (%)
70
25
10
Pout
8
9
6
7
VDD = 7.5 Vdc, Pin = 0.25 W, IDQ = 200 mA
5
340 360 380 400 420 440 460 480
500
4
540
520
f, FREQUENCY (MHz)
Figure 5. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Input Power
VDD = 7.5 Vdc
f= 435 MHz
8
1.2
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
10
Pin = 24 dBm
6
4
Pin = 21 dBm
2
Detail A
0.8
0.5
1.0
1.5
2.0
2.5
3.0
0.4
Pin = 21 dBm
0.2
0
3.5
Pin = 24 dBm
0.6
0
0
VDD = 7.5 Vdc
f = 435 MHz
1.0
0
0.5
1.0
1.5
2.0
2.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
4.0
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate--Source Voltage
70
D
21
435 MHz 350 MHz
19
17
Gps
15
435 MHz 350 MHz
13
520 MHz
11
9
7
0
0.05
50
30
10
12
9
Pout
435 MHz
D, DRAIN
EFFICIENCY (%)
23
Gps, POWER GAIN (dB)
90
520 MHz
6
350 MHz
3
VDD = 7.5 Vdc, IDQ = 200 mA
520 MHz
0
0.15
0.20
0.25
0.30
0.35
0.10
Pout, OUTPUT
POWER (WATTS)
25
Pin, INPUT POWER (WATTS)
Figure 7. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
AFM907N
RF Device Data
NXP Semiconductors
7
350–520 MHz BROADBAND REFERENCE CIRCUIT
Zo = 5
f = 520 MHz
Zsource
f = 350 MHz
f = 520 MHz
Zload
f = 350 MHz
f
MHz
Zsource
Zload
350
1.9 + j1.6
3.1 -- j0.7
360
2.0 + j1.9
3.2 -- j0.6
370
2.0 + j2.0
3.2 -- j0.5
380
2.1 + j2.2
3.3 -- j0.5
390
2.2 + j2.4
3.3 -- j0.5
400
2.3 + j2.6
3.2 -- j0.5
410
2.3 + j2.7
3.2 -- j0.5
420
2.4 + j2.8
3.1 -- j0.6
430
2.5 + j2.9
3.0 -- j0.6
440
2.6 + j3.0
2.8 -- j0.6
450
2.7 + j3.1
2.7 -- j0.6
460
2.7 + j3.2
2.5 -- j0.6
470
2.8 + j3.2
2.3 -- j0.5
480
2.9 + j3.3
2.1 -- j0.5
490
3.0 + j3.4
2.0 -- j0.4
500
3.0 + j3.4
1.8 -- j0.3
510
3.1 + j3.5
1.7 -- j0.1
520
3.2 + j3.5
1.5 + j0.04
Zsource = Test circuit impedance as measured from
gate to ground.
= Test circuit impedance as measured from
Zload
drain to ground.
50
Input
Matching
Network
Zsource
AFM907N
8
Output
Matching
Network
Device
Under
Test
50
Zload
Figure 8. Broadband Series Equivalent Source and Load Impedance — 350–520 MHz
RF Device Data
NXP Semiconductors
520 MHz NARROWBAND RF TEST FIXTURE — 5.0 3.0 (12.70 cm 7.62 cm)
C3
C1
C14
B1
C2
C7
C13
C12
C4
C15
C9
R1
L1
C5
C11
L2
C8
C6
C10
AFM907N
Rev. 0
D88764
Figure 9. AFM907N Narrowband RF Test Fixture Component Layout — 520 MHz
Table 9. AFM907N Narrowband RF Test Fixture Component Designations and Values — 520 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C2, C14
0.1 F Chip Capacitor
CDR33BX104AKWS
AVX
C3, C13
0.01 F Chip Capacitor
C0805C103K5RAC
Kemet
C4, C12
180 pF Chip Capacitor
ATC100B181JT300XT
ATC
C5
33 pF Chip Capacitor
ATC100B130JT500XT
ATC
C6
20 pF Chip Capacitor
ATC100B200JT500XT
ATC
C7
22 pF Chip Capacitor
ATC100B220JT500XT
ATC
C8, C9
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C10
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C11
30 pF Chip Capacitor
ATC100B300JT500XT
ATC
C15
330 F, 35 V Electrolytic Capacitor
MCGPR35V337M10X16-RH
Multicomp
L1
22 nH Inductor, 7 Turns
B07TJLC
Coilcraft
L2
5 nH Inductor, 2 Turns
A02TKLC
Coilcraft
R1
5.6 , 1/4 W Chip Resistor
CRCW12065R60FKEA
Vishay
PCB
Rogers RO4350B, 0.030, r = 3.66
D88764
MTL
AFM907N
RF Device Data
NXP Semiconductors
9
TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND RF TEST FIXTURE
Pout, OUTPUT POWER (WATTS)
12
VDD = 7.5 Vdc
f= 520 MHz
10
Pin = 18.5 dBm
8
Pin = 15.5 dBm
6
4
2
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
25
90
24
70
D
50
22
30
21
10
20
12
Pout
19
10
18
8
17
15
14
6
Gps
16
4
2
VDD = 7.5 Vdc, IDQ1 = 100 mA, f = 520 MHz
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
23
D, DRAIN
EFFICIENCY (%)
Figure 10. Output Power versus Gate--Source Voltage
0
0.40
Pin, INPUT POWER (WATTS)
Figure 11. Power Gain, Drain Efficiency and Output Power
versus Input Power
AFM907N
10
RF Device Data
NXP Semiconductors
520 MHz PRODUCTION TEST FIXTURE
f
MHz
Zsource
Zload
520
0.71 + j1.98
1.73 + j1.64
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50
Zload
Figure 12. Series Equivalent Source and Load Impedance — 520 MHz
AFM907N
RF Device Data
NXP Semiconductors
11
2.00
5.35 2.0 solder pad
with thermal via structure.
All dimensions in mm.
3.00
5.35
0.56
0.35
10 0.80
4 0.65
Figure 13. PCB Pad Layout for 16--Lead DFN 4 6
AFM907N
WLYW
Figure 14. Product Marking
AFM907N
12
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
AFM907N
RF Device Data
NXP Semiconductors
13
AFM907N
14
RF Device Data
NXP Semiconductors
AFM907N
RF Device Data
NXP Semiconductors
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Apr. 2017
Initial release of data sheet
1
May 2019
Table 1, Max Ratings table, Operating Voltage: changed 7.5 Vdc to 12.5 Vdc to reflect additional
qualification data, p. 2
Table 9, Narrowband RF Test Fixture Component Designations and Values — 520 MHz: corrected C6 to
20 pF ATC100B200JT500XT and C7 to 22 pF, p. 9
Fig. 12, Series Equivalent Source and Load Impedance — 520 MHz: added to data sheet, p. 11
AFM907N
16
RF Device Data
NXP Semiconductors
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including without limitation consequential or incidental damages. “Typical” parameters
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E 2017, 2019 NXP B.V.
AFM907N
Document
Number:
RF
Device
Data AFM907N
Rev. 1,Semiconductors
05/2019
NXP
17
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