AFT09MP055GNR1

Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. Narrowband Performance (In Freescale Test Circuit: 12.5 Vdc, IDQ(A+B) = 550 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD (%) Pout (W) 870 17.5 69.0 57 764--941 MHz, 55 W, 12.5 V BROADBAND RF POWER LDMOS TRANSISTORS 800 MHz Broadband Performance (In Freescale Reference Circuit: 12.5 Vdc, IDQ(A+B) = 800 mA, Pin = 1.5 W, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD (%) Pout (W) 764 16.1 56.0 61 816 15.8 58.0 57 870 15.7 61.0 56 TO--270WB--4 AFT09MP055NR1 Load Mismatch/Ruggedness Frequency (MHz) Signal Type 870 (1) CW VSWR Pin (W) Test Voltage >65:1 at all Phase Angles 3 (3 dB Overdrive) 17 TO--270WB--4 GULL AFT09MP055GNR1 Result No Device Degradation 1. Measured in 764--870 MHz broadband test circuit. Features • Characterized for Operation from 764 to 941 MHz • Integrated Input Matching Improves Broadband Performance • Integrated ESD Protection • Broadband — Full Power Across the Band (764--870 MHz) • 225°C Capable Plastic Package • Exceptional Thermal Performance • Extreme Ruggedness • High Linearity for: TETRA, SSB • Cost--effective Over--molded Plastic Packaging • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. Gate A Drain A Gate B Drain B (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Typical Applications • Output Stage 800 MHz Band Mobile Radio • Output Stage 700 MHz Band Mobile Radio This document contains information on a preproduction product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT09MP055NR1 AFT09MP055GNR1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +40 Vdc Gate--Source Voltage VGS --6.0, +12 Vdc Operating Voltage VDD 19, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C TC --40 to +150 °C TJ --40 to +225 °C PD 625 3.13 W W/°C Symbol Value (2,3) Unit RθJC 0.32 °C/W Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78°C, 55 W CW, 12.5 Vdc, IDQ(A+B) = 550 mA, 870 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) A, passes 150 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 40 Vdc, VGS = 0 Vdc) IDSS — — 3 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 12.5 Vdc, VGS = 0 Vdc) IDSS — — 2 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 μAdc) VGS(th) 1.6 2.1 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.85 Adc) VDS(on) — 0.14 — Vdc Forward Transconductance (4) (VGS = 10 Vdc, ID = 7.5 Adc) gfs — 7 — S Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) AFT09MP055NR1 AFT09MP055GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (VDS = 12.5 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.9 — pF Output Capacitance (VDS = 12.5 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 61 — pF Input Capacitance (VDS = 12.5 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss (2) — 690 — pF Dynamic Characteristics (1) Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 550 mA, Pin = 1 W, f = 870 MHz Common--Source Amplifier Output Power Drain Efficiency Pout — 57 — W ηD — 69.0 — % 1. Each side of device measured separately. 2. Value includes input matching network. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 10 1000 IDS, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100 Coss Measured with ±30 mV (rms ) ac @ 1 MHz, VGS = 0 Vdc 10 TA = 25°C 9 Ciss Crss VGS = 3.75 Vdc 8 7 3.5 Vdc 6 5 4 3.25 Vdc 3 2 3 Vdc 1 2.5 Vdc 0 1 0 5 15 10 0 20 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Ciss value includes input matching network. Note: Measured with both sides of the transistor tied together. Figure 2. Capacitance versus Drain--Source Voltage Figure 3. Drain Current versus Drain--Source Voltage 109 VDD = 12.5 Vdc 108 MTTF (HOURS) ID = 5.13 Amps 107 6.41 Amps 7.71 Amps 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 4. MTTF versus Junction Temperature -- CW AFT09MP055NR1 AFT09MP055GNR1 4 RF Device Data Freescale Semiconductor, Inc. 870 MHz NARROWBAND PRODUCTION TEST FIXTURE C1 C11 C9 B1 B3 C5 C7 L1 R1 C20 C16 L3 C3 AFT09MP055N Rev. 3 C18 C14 C22 R3 C13 C15 R2 L2 C6 C8 B2 C17 C10 CUT OUT AREA R4 C19 C24 C23 C21 C4 L4 B4 C12 C2 Figure 5. AFT09MP055NR1 Narrowband Test Circuit Component Layout — 870 MHz Table 6. AFT09MP055NR1 Narrowband Test Circuit Component Designations and Values — 870 MHz Part Description Part Number Manufacturer B1, B2 RF Beads, Short 2743019447 Fair-Rite B3, B4 RF Beads, Long 2743021447 Fair-Rite C1, C2, C3, C4 10 μF Chip Capacitors GRM55DR61H106KA88L Murata C5, C6 0.1 μF Chip Capacitors GRM32MR71H104JA01L Murata C7, C8 1 μF Chip Capacitors GRM31MR71H105KA88L Murata C9, C10 68 pF Chip Capacitors ATC100B680JT500XT ATC C11, C12, C22, C23 56 pF Chip Capacitors ATC100B560CT500XT ATC C13 7.5 pF Chip Capacitor GQM2195C2E7R5BB15 Murata C14, C15 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC C16, C17 12 pF Chip Capacitors ATC600F120JT250XT ATC C18, C19, C20, C21 9.1 pF Chip Capacitors GQM2195C2E9R1BB15 Murata C24 3 pF Chip Capacitor ATC600F3R0BT250XT ATC L1, L2, L3, L4 2.5 nH Inductors A01TKLC Coilcraft R1, R2 10 Ω Chip Resistors CRCW120610R0JNEA Vishay R3 2.0 Ω Chip Resistor ERJ-14YJ2R0U Panasonic R4 5.9 Ω Chip Resistor CRCW12065R90FKEA Vishay PCB 0.030″, εr = 4.8 RF35A2 Taconic AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 5 AFT09MP055NR1 AFT09MP055GNR1 6 RF Device Data Freescale Semiconductor, Inc. RF INPUT C13 Z2 VBIAS Z4 C2 Z6 C6 C17 Z8 Z7 Z9 C8 B2 Z10 R3 C7 C16 C5 C10 L2 R2 Z12 Z11 R1 L1 DUT C9 Z14 Z13 L4 Z16 Z15 L3 C12 C18 Z18 Z17 B4 C19 C11 B3 C4 C3 Z20 R4 Z19 0.670″ × 0.120″ Microstrip 0.025″ × 0.400″ Microstrip 0.025″ × 0.400″ Microstrip Z3*, Z4* Z5, Z6 Z7, Z8 * Line length includes microstrip bends 0.595″ × 0.065″ Microstrip Z2 Description 0.721″ × 0.065″ Microstrip Z1 Microstrip VSUPPLY C21 Z22 Z21 C23 C22 C20 VSUPPLY Z24 Z23 Microstrip Z17, Z18 Z15, Z16 Z13, Z14 Z11, Z12 Z9, Z10 Description 0.213″ × 0.400″ Microstrip 0.100″ × 0.400″ Microstrip 0.075″ × 0.400″ Microstrip 0.075″ × 0.400″ Microstrip 0.295″ × 0.400″ Microstrip Z26 Z25 Z23*, Z24* Z21, Z22 Z19, Z20 Microstrip C24 Z26 Description Z25 0.901″ × 0.065″ Microstrip 0.175″ × 0.065″ Microstrip 0.885″ × 0.120″ Microstrip 0.025″ × 0.400″ Microstrip 0.007″ × 0.400″ Microstrip Figure 6. AFT09MP055NR1 Narrowband Test Circuit Schematic — 870 MHz C15 C14 Z5 C1 B1 Table 7. AFT09MP055NR1 Narrowband Test Circuit Microstrips — 870 MHz Z1 Z3 VBIAS RF OUTPUT TYPICAL CHARACTERISTICS — 870 MHz 100 Pout, OUTPUT POWER (WATTS) 90 VDD = 13.6 Vdc, Pin = 1 W 80 VDD = 12.5 Vdc, Pin = 1 W 70 60 VDD = 13.6 Vdc, Pin = 0.5 W 50 VDD = 12.5 Vdc Pin = 0.5 W 40 30 20 10 f = 870 MHz 0 0 1 0.5 2 1.5 2.5 3 4 3.5 4.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7. Output Power versus Gate--Source Voltage at a Constant Input Power 20 18 60 17 50 40 16 15 14 13 ηD 30 VDD = 12.5 Vdc, IDQ(A+B) = 550 mA f = 870 MHz Pout 12 0.1 20 10 Pout, OUTPUT POWER (WATTS) 70 Gps ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 19 80 0 3 1 Pin, INPUT POWER (WATTS) Figure 8. Power Gain, Drain Efficiency and Output Power versus Input Power VDD = 12.5 Vdc, IDQ(A+B) = 550 mA, Pout = 57 W Avg. f MHz Zsource Ω Zload Ω 870 1.40 -- j1.00 0.61 -- j0.14 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Ω Input Matching Network = Test circuit impedance as measured from drain to ground. Device Under Test Zsource Output Matching Network 50 Ω Zload Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 7 764--870 MHz BROADBAND REFERENCE CIRCUIT Table 8. 764--870 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 800 mA, Pout = 55 W, TA = 25°C, CW Frequency (MHz) Gps (dB) ηD (%) Pout (W) 764 16.6 54.2 55 816 16.0 59.2 55 870 15.8 61.1 55 Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 764 CW VSWR Pin (W) >65:1 at all Phase Angles 3 (3 dB Overdrive) Test Voltage, VDD Result 15 No Device Degradation AFT09MP055NR1 AFT09MP055GNR1 8 RF Device Data Freescale Semiconductor, Inc. 764--870 MHz BROADBAND REFERENCE CIRCUIT C26 C30 AFT09MP055N Rev. 1 C32 C34 B3 C28 C24 R5 B1 C36 C4 L1 R3 C5 C7* L3 C15 C13 C22 C9 C1* R1 Q1 C12* C2* R2 C21 C23 C8* R4 L2 C19 C20 C10 C11* C17 C16 C14 C18 L4 C27 C31 C6 B2 C3 C33 C29 C25 C35 R6 C37 B4 *C1, C2, C7, C8, C11 and C12 are mounted vertically. Figure 10. AFT09MP055NR1 Broadband Reference Circuit Component Layout — 764--870 MHz Table 10. AFT09MP055NR1 Broadband Reference Circuit Component Designations and Values — 764--870 MHz Part Description Part Number Manufacturer B1, B2, B3, B4 RF Beads, Short 2743019447 Fair-Rite C1, C2, C3, C4 56 pF Chip Capacitors ATC100B560GT1500XT ATC C5, C6, C7, C8 10 pF Chip Capacitors ATC600F100GT250XT ATC C9, C10 8.2 pF Chip Capacitors ATC600F8R2JT250XT ATC C11 4.7 pF Chip Capacitor ATC600F4R7GT250XT ATC C12 5.6 pF Chip Capacitor ATC600F5R6GT250XT ATC C13, C14 15 pF Chip Capacitors ATC600F150JT250XT ATC C15, C16, C17, C18 3.9 pF Chip Capacitors ATC600F3R9GT250XT ATC C19 6.8 pF Chip Capacitor ATC600F6R8GT250XT ATC C20, C21 2.2 pF Chip Capacitors ATC600F2R2GT250XT ATC C22, C23 1.5 pF Chip Capacitors ATC600F1R5GT250XT ATC C24, C25, C26, C27 0.1 μF Chip Capacitors GRM32MR71H104JA01L Murata C28, C29, C30, C31 1 μF Chip Capacitors GRM31MR71H105KA88L Murata C32, C33, C34, C35 10 μF Chip Capacitors GRM55DR61H106KA88L Murata C36, C37 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp L1, L2, L3, L4 12.5 nH Chip Inductors A04TKLC Coilcraft Q1 RF Power LDMOS Transistor AFT09MP055NR1 Freescale R1, R2, R3, R4, R5, R6 10 Ω, Chip Resistors CRCW201010R0FKEF Vishay PCB 0.030″, εr = 4.8 S1000-2 Shengyi AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 9 RF INPUT Z1 C1 10 C11 Z3 VBIAS C12 Z4 B2 Z6 Z5 B1 C29 C10 Z8 C25 C8 C9 Z7 C7 C28 C33 Z10 R1 Z9 C32 C6 DUT C5 Z12 Z11 C16 Z14 Z13 C15 C14 Z16 Z15 C13 Z18 R2 Z17 R6 R5 C21 C20 B4 C23 C22 L3 B3 0.052″ × 0.051″ Microstrip 0.185″ × 0.051″ Microstrip 0.408″ × 0.071″ Microstrip 0.035″ × 0.393″ Microstrip Z3 Z4 Z5*, Z6* Z7, Z8 * Line length includes microstrip bends 0.043″ × 0.051″ Microstrip Z2 Description 0.157″ × 0.051″ Microstrip Z1 Microstrip L4 Z20 Z19 Z22 C3 C18 C26 C27 C17 Z21 C4 C31 Z23 C30 Microstrip Z17, Z18 Z15, Z16 Z13, Z14 Z11, Z12 Z9, Z10 Description 0.083″ × 0.393″ Microstrip 0.119″ × 0.393″ Microstrip 0.052″ × 0.393″ Microstrip 0.097″ × 0.393″ Microstrip 0.319″ × 0.393″ Microstrip Microstrip Z25 Z24 Z23 Z21*, Z22* Z19, Z20 0.157″ × 0.051″ Microstrip 0.280″ × 0.051″ Microstrip 0.240″ × 0.051″ Microstrip 0.500″ × 0.071″ Microstrip C35 C19 0.190″ × 0.071″ Microstrip Description C34 Z24 Figure 11. AFT09MP055NR1 Broadband Reference Circuit Schematic — 764--870 MHz L2 R4 R3 L1 C24 C2 VSUPPLY C37 VSUPPLY RF OUTPUT Z25 C36 + Table 11. AFT09MP055NR1 Broadband Reference Circuit Microstrips — 764--870 MHz Z2 VBIAS + AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 764--870 MHz BROADBAND REFERENCE CIRCUIT ηD 17 64 60 56 16.5 16 Gps 15.5 15 Pout 14.5 14 760 800 840 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17.5 68 VDD = 12.5 Vdc, Pin = 1.5 W (Avg.) IDQ(A+B) = 800 mA 52 65 60 55 50 880 Pout, OUTPUT POWER (WATTS) 18 f, FREQUENCY (MHz) Figure 12. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 12.5 Vdc ηD 17 60 55 16.5 16 Gps 15.5 15 Pout 14.5 14 760 65 800 840 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17.5 70 VDD = 13.6 Vdc, Pin = 1 W (Avg.) IDQ(A+B) = 800 mA 50 65 60 55 50 880 Pout, OUTPUT POWER (WATTS) 18 f, FREQUENCY (MHz) Figure 13. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 13.6 Vdc AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 11 TYPICAL CHARACTERISTICS — 764--870 MHz BROADBAND REFERENCE CIRCUIT 80 50 VDD = 13.6 Vdc, Pin = 1 W 60 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) VDD = 13.6 Vdc, Pin = 1.5 W f = 816 MHz 70 VDD = 12.5 Vdc, Pin = 1.5 W 50 VDD = 12.5 Vdc Pin = 1 W 40 30 Detail A 20 10 0 2 1 3 VDD = 13.6 Vdc, Pin = 1.5 W VDD = 13.6 Vdc, Pin = 1 W 30 VDD = 12.5 Vdc, Pin = 1.5 W 20 10 0 0 f = 816 MHz 40 VDD = 12.5 Vdc Pin = 1 W 1 0.5 0 1.5 2 2.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 4 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 14. Output Power versus Gate--Source Voltage Gps 17 870 MHz 100 816 MHz 80 764 MHz 816 MHz 16 764 MHz 60 870 MHz 40 15 ηD 870 MHz 14 13 0.1 Pout 764 MHz 20 816 MHz ηD, DRAIN EFFICIENCY (%) 18 Gps, POWER GAIN (dB) 120 VDD = 12.5 Vdc, IDQ(A+B) = 800 mA Pout, OUTPUT POWER (WATTS) 19 0 1 3 Pin, INPUT POWER (WATTS) Figure 15. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency AFT09MP055NR1 AFT09MP055GNR1 12 RF Device Data Freescale Semiconductor, Inc. 764--870 MHz BROADBAND REFERENCE CIRCUIT Zo = 2 Ω f = 870 MHz f = 760 MHz f = 870 MHz Zsource Zload f = 760 MHz VDD = 12.5 Vdc, IDQ(A+B) = 800 mA, Pout = 55 W Avg. f MHz Zsource Ω Zload Ω 760 1.24 + j0.09 1.00 -- j0.81 770 1.30 + j0.15 1.00 -- j0.75 780 1.35 + j0.21 1.00 - j0.72 790 1.43 + j0.34 1.01 - j0.61 800 1.54 + j0.34 1.03 - j0.58 810 1.66 + j0.18 0.99 - j0.65 820 1.63 + j0.06 0.90 - j0.63 830 1.55 - j0.07 0.78 - j0.60 840 1.42 - j0.12 0.71 - j0.48 850 1.21 - j0.13 0.56 - j0.37 860 1.15 - j0.12 0.52 - j0.28 870 1.01 - j0.10 0.43 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Ω Input Matching Network = Test circuit impedance as measured from drain to ground. Device Under Test Zsource Output Matching Network 50 Ω Zload Figure 16. Broadband Series Equivalent Source and Load Impedance — 764--870 MHz AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 13 PACKAGE DIMENSIONS AFT09MP055NR1 AFT09MP055GNR1 14 RF Device Data Freescale Semiconductor, Inc. AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 15 AFT09MP055NR1 AFT09MP055GNR1 16 RF Device Data Freescale Semiconductor, Inc. AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 17 AFT09MP055NR1 AFT09MP055GNR1 18 RF Device Data Freescale Semiconductor, Inc. AFT09MP055NR1 AFT09MP055GNR1 RF Device Data Freescale Semiconductor, Inc. 19 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2013 Description • Initial Release of Data Sheet AFT09MP055NR1 AFT09MP055GNR1 20 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. 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