Freescale Semiconductor
Technical Data
Document Number: AFT26HW050S
Rev. 2, 7/2013
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 9 watt asymmetrical Doherty RF power LDMOS transistors are
designed for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 2496 to 2690 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 100 mA, VGSB = 1.4 Vdc, Pout = 9 Watts Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2620 MHz
14.9
48.6
7.9
--28.4
2655 MHz
14.6
48.3
7.9
--32.6
2690 MHz
14.2
47.1
7.8
--37.3
AFT26HW050SR3
AFT26HW050GSR3
AFT26H050W26SR3
2496–2690 MHz, 9 W AVG., 28 V
NI--780S--4L4S
AFT26HW050SR3
Features
Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.
NI--780GS--4L4L
AFT26HW050GSR3
NI--780S--4L4L
AFT26H050W26SR3
N.C. 1
Carrier
8 VBWA (1)
RFinA/VGSA 2
7 RFoutA/VDSA
RFinB/VGSB 3
6 RFoutB/VDSB
N.C. 4
Peaking
5 VBWB (1)
(Top View)
Figure 1. Pin Connections
1. Device can operate with the VDD current
supplied through pin 5 and pin 8.
Freescale Semiconductor, Inc., 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
--40 to +225
C
Symbol
Value (2,3)
Unit
RJC
0.75
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 72C, 9 W W--CDMA, 28 Vdc, IDQA = 100 mA, VGSB = 2.8 Vdc, 2655 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 18 Adc)
VGS(th)
1.5
2.1
2.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDA = 100 mA)
VGSA(Q)
—
2.85
—
Vdc
Gate Quiescent Voltage (5)
(VDD = 28 Vdc, IDA = 100 mA, Measured in Functional Test)
VGGA(Q)
5.0
5.7
6.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.18 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 36 Adc)
VGS(th)
1.5
2.0
2.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc)
VGSB(Q)
—
1.4
—
Vdc
Gate Quiescent Voltage (5)
(VDD = 28 Vdc, Measured in Functional Test)
VGGB(Q)
—
2.8
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.36 Adc)
VDS(on)
0.1
0.22
0.3
Vdc
Characteristic
Off Characteristics
(4)
On Characteristics -- Side A (4)
On Characteristics -- Side B (4)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
5. VGG = 2 VGS(Q). Parameter measured on Freescale test fixture, due to resistor divider network on the board. Refer to test fixture layout.
(continued)
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 100 mA, VGSB = 1.4 Vdc, Pout = 9 W Avg.,
f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
13.5
14.2
16.5
dB
Drain Efficiency
D
44.0
47.1
—
%
PAR
7.3
7.8
—
dB
ACPR
—
--37.3
--32.5
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQA = 100 mA, f = 2655 MHz
No Device Degradation
VSWR 10:1 at 32 Vdc, 35 W CW Output Power
(3 dB Input Overdrive from 70 W CW Rated Power)
Typical Performances (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 100 mA, VGSB = 1.4 Vdc,
2620--2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
42
—
W
Pout @ 3 dB Compression Point (4)
P3dB
—
54
—
W
—
35
—
VBWres
—
130
—
MHz
Gain Flatness in 70 MHz Bandwidth @ Pout = 9 W Avg.
GF
—
0.7
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.014
—
dB/C
P1dB
—
0.007
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2620--2690 MHz frequency range)
VBW Resonance Point (5)
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C)
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
4. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
5. Measured using gull wing formed part in AFT26HW050GS characterization test fixture. See Appendix, p. 17.
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
3
AFT26HW050S
Rev. 5
VGGA
VDDA
R4
R3
C17
C12
C1*
R7
C14
C19
C18
C10
CUT OUT AREA
C3
Z1
C4
R1, R2**
C2*
C
C5 C6
C9*
C7
P
C8*
C20
C11
R8
C21
C13
C15
R5
R6
C16
VGGB
VDDB
*C1, C2, C8 and C9 are mounted vertically.
**R1 and R2 are stacked.
Figure 2. AFT26HW050SR3 Test Circuit Component Layout
Table 5. AFT26HW050SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C8, C9, C10, C11,
C14, C15
3.9 pF Chip Capacitors
ATC100B3R9BT500XT
ATC
C3
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C4
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C5, C6
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
C7
0.1 pF Chip Capacitor
ATC100B0R1BT500XT
ATC
C12, C13
4.7 F Chip Capacitors
C4532X7S2A475M230KB
TDK
C16, C17
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C18, C19, C20, C21
1.0 F Chip Capacitors
12065G105ZAT2A
AVX
R1, R2
100 , 1/4 W Chip Resistors
WCR1206-100RFI
Welwyn
R3, R4, R5, R6
10 k, 1/4 W Chip Resistors
WCR1206-10K0FI
Welwyn
R7, R8
4.7 , 1/4 W Chip Resistors
WCR1206-4R70FI
Welwyn
Z1
2300--2700 MHz Band, 90, 5 dB Hybrid Coupler
X3C25P1-05S
Anaren
PCB
0.030, r = 3.5
RF35A2
Taconic
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
4
RF Device Data
Freescale Semiconductor, Inc.
52
16.5
16
46
VDD = 28 Vdc, Pout = 9 W (Avg.)
IDQA = 100 mA, VGSB = 2.8 Vdc
Single--Carrier W--CDMA
15.5
15
43
40
--20
--1.5
14
--25
--1.7
13.5
--30
14.5
Gps
PARC
ACPR
13
12.5
12
2480
--35
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
2510
2540
2570
2600
2630
--40
2660
ACPR (dBc)
Gps, POWER GAIN (dB)
49
D
--1.9
--2.1
--2.3
--45
2720
2690
PARC (dB)
17
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 9 Watts Avg.
--20
VDD = 28 Vdc, Pout = 4 W (PEP)
IDQA = 100 mA, VGSB = 2.8 Vdc
--30
IM3--L
IM3--U
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2655 MHz
--40
IM5--L
--50
IM5--U
IM7--U
--60
--70
IM7--L
1
10
200
100
TWO--TONE SPACING (MHz)
Note: Measured using gull wing formed part in AFT26HW050GS
characterization test fixture. See Appendix, p. 17.
15
--1
14.5
14
13.5
13
12.5
--1 dB = 6 W
VDD = 28 Vdc, IDQA = 100 mA
VGSB = 2.8 Vdc, f = 2655 MHz
D
--2
Gps
--3 dB = 12 W
--6
30
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
6
10
--15
40
ACPR
2
60
PARC
--4
--5
--10
50
--2 dB = 9 W
--3
70
14
18
--20
--25
ACPR (dBc)
0
D DRAIN EFFICIENCY (%)
15.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products versus
Two--Tone Spacing
--30
20
--35
10
--40
22
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
15
2655 MHz
2620 MHz
2655 MHz
14.5
14
10
60
0
D
2620 MHz
2690 MHz
ACPR
2620 MHz
2655 MHz
2690 MHz
70
13.5
50
40
30
2690 MHz
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
13
12.5
1
20
Gps
10
100
10
--10
--20
--30
ACPR (dBc)
VDD = 28 Vdc, IDQA = 100 mA, VGSB= 2.8 Vdc
D, DRAIN EFFICIENCY (%)
15.5
--40
--50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
20
GAIN (dB)
16
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 100 mA
VGSB = 2.8 Vdc
Gain
12
8
4
0
2400
2450
2500
2550
2600
2650
2700
2750
2800
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQA = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2620
28.0 -- j23.1
23.9 + j22.9
27.8 -- j12.4
17.2
42.9
19
54.9
--17
2655
36.9 -- j21.1
33.1 + j21.2
29.1 -- j11.6
17.3
42.9
19
56.0
--16
2690
48.4 -- j13.5
42.1 + j16.0
30.9 -- j14.3
17.0
42.8
19
53.5
--17
Max Output Power
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
29.8 -- j16.4
14.8
43.6
23
54.6
--21
37.9 + j20.4
31.0 -- j16.1
14.9
43.6
23
55.1
--21
47.7 + j12.5
32.1 -- j14.9
14.9
43.6
23
54.9
--22
f
(MHz)
Zsource
()
Zin
()
2620
28.0 -- j23.1
27.1 + j23.9
2655
36.9 -- j21.1
2690
48.4 -- j13.5
Zload
()
(2)
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
2620
28.0 -- j23.1
25.7 + j23.9
2655
36.9 -- j21.1
35.7 + j21.2
2690
48.4 -- j13.5
44.6 + j15.4
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
24.3 + j8.63
19.5
41.2
13
62.2
--22
22.2 + j8.93
19.7
41.0
13
62.8
--22
21.1 + j7.02
19.6
41.1
13
62.5
--22
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
2620
28.0 -- j23.1
28.0 + j24.6
2655
36.9 -- j21.1
39.6 + j20.7
2690
48.4 -- j13.5
49.3 + j11.6
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
26.6 + j5.46
17.2
42.3
17
63.1
--27
23.4 + j5.31
17.3
42.2
17
63.6
--29
21.5 + j5.46
17.4
42.0
16
63.0
--30
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2620
27.1 -- j17.7
22.9 + j19.6
8.62 -- j15.3
12.8
46.1
40
58.3
--32
2655
36.7 -- j12.5
32.0 + j15.6
8.78 -- j15.7
12.8
46.1
40
58.4
--33
2690
39.5 -- j2.23
37.9 + j7.03
8.71 -- j17.3
12.4
45.9
39
54.9
--33
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
2620
27.1 -- j17.7
26.5 + j18.9
2655
36.7 -- j12.5
35.9 + j11.8
2690
39.5 -- j2.23
39.4 + j1.33
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
8.56 -- j16.9
10.5
46.7
47
57.3
--37
8.57 -- j17.0
10.5
46.8
47
57.2
--38
9.02 -- j18.1
10.4
46.6
46
55.6
--38
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 10. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2620
27.1 -- j17.7
21.4 + j21.6
13.6 -- j7.07
14.1
44.4
28
68.7
--38
2655
36.7 -- j12.5
31.4 + j19.0
13.5 -- j5.38
14.0
44.0
25
68.6
--40
2690
39.5 -- j2.23
39.1 + j10.8
13.5 -- j7.10
13.9
44.2
26
67.7
--39
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
2620
27.1 -- j17.7
25.3 + j21.2
2655
36.7 -- j12.5
36.2 + j15.4
2690
39.5 -- j2.23
41.9 + j4.53
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
13.9 -- j7.07
12.1
44.9
31
68.0
--48
12.5 -- j7.10
12.1
45.0
31
68.1
--49
12.5 -- j6.42
12.0
44.6
29
66.9
--50
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
8
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2655 MHz
IMAGINARY ()
10
20
38.5
39
39.5
40
41
40.5
E
10
41.5
IMAGINARY ()
20
0
42
--10
--20
P
41
20
60
58
56
62
0
54
--10
52
P
50
--20
42.5
--30
10
E
48
30
40
50
46
--30
10
60
20
30
40
50
60
REAL ()
REAL ()
Figure 12. P1dB Load Pull Output Power Contours (dBm)
Figure 13. P1dB Load Pull Efficiency Contours (%)
0
20.5
19.5
19
18.5
18
10
E
17.5
--10
17
P
--20
--30
10
30
40
E --20
--14
--18
0
--10
P
--20
16.5
20
--30
--28
--26
20
IMAGINARY ()
IMAGINARY ()
10
--24
--22
20
20
50
60
--30
10
--16
20
30
40
50
60
REAL ()
REAL ()
Figure 14. P1dB Load Pull Gain Contours (dB)
Figure 15. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2655 MHz
20
39.5 40 40.5
20
41.5
41
56
42
E
10
42.5
IMAGINARY ()
IMAGINARY ()
10
0
43
--10
E
0
62
--10
P
--20
58
56
P
50
46
41.5
20
30
40
50
--30
10
60
20
54
52
--20
43.5
--30
10
60
48
30
40
50
60
REAL ()
REAL ()
Figure 16. P3dB Load Pull Output Power Contours (dBm)
Figure 17. P3dB Load Pull Efficiency Contours (%)
20
20
--32
0
18.5
18
E
17.5
17
16.5
16
10
15.5
--10
15
P
--20
--30
10
30
40
--24
--20
--22
--26
0
--18
--10
P
--20
14.5
20
--28
--30
E
IMAGINARY ()
IMAGINARY ()
10
50
60
--30
10
20
30
40
50
60
REAL ()
REAL ()
Figure 18. P3dB Load Pull Gain Contours (dB)
Figure 19. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
10
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2655 MHz
42
0
43
42.5
IMAGINARY ()
E
--5
44.5
P
--10
--15
--25
62
60
58
56
54
52
--20
45.5
45
6
64
P
46
--20
8
10
12
14
16
18
--25
20
6
8
10
Figure 20. P1dB Load Pull Output Power Contours (dBm)
14
16
18
20
Figure 21. P1dB Load Pull Efficiency Contours (%)
0
0
--5
14
--10
13.5
--15
P
13
11.5
--20
6
12
8
10
12
14
16
--40
E
--38
--36
--10
--34
--15
P
--32
--20
12.5
11
--42
--44
--5
E
IMAGINARY ()
IMAGINARY ()
12
REAL ()
REAL ()
--25
66
E
44
45
--10
--15
68
43.5
--5
IMAGINARY ()
0
18
20
--25
--30
--28
6
8
REAL ()
10
12
14
16
18
20
REAL ()
Figure 22. P1dB Load Pull Gain Contours (dB)
NOTE:
Figure 23. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2655 MHz
0
42.5
66
44
--5
45.5
--10
45
--15
E
68
--10
--15
64
P
--20
--25
52
--20
46
8
62
60
58
56
54
P
46.5
6
10
12
14
16
18
--25
20
6
8
10
12
14
Figure 24. P3dB Load Pull Output Power Contours (dBm)
0
--5
--5
E
IMAGINARY ()
IMAGINARY ()
--54
11.5
--15
11
P
9.5
--20
--25
10
8.5
8
10
12
20
14
16
E
--10
--52 --50
--48
--46
--44
--42
--40
--15
--38
P
--20
10.5
9
6
18
Figure 25. P3dB Load Pull Efficiency Contours (%)
0
12
16
REAL ()
REAL ()
--10
64
--5
44.5
E
IMAGINARY ()
IMAGINARY ()
0
43.5
43
18
20
--25
6
8
REAL ()
10
12
14
16
18
20
REAL ()
Figure 26. P3dB Load Pull Gain Contours (dB)
NOTE:
Figure 27. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
13
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
14
RF Device Data
Freescale Semiconductor, Inc.
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
15
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
16
RF Device Data
Freescale Semiconductor, Inc.
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
17
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
18
RF Device Data
Freescale Semiconductor, Inc.
APPENDIX
VGGA
C5
VDDA
AFT26HW050GS
Rev. 5
C4
C8
C16
C14
R2
C2
C11
C3
C
C17
Z1
C10
C13
R1
P
C1
R3
C15
C12
C9
C6
C7
VGGB
VDDB
Figure A--1. AFT26HW050GSR3 Characterization Test Circuit Component Layout
Table A--1. AFT26HW050GSR3 Characterization Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
3.3 pF Chip Capacitor
08051J3R3CBTTR
AVX
C2, C4, C7, C10, C11
4.7 pF Chip Capacitors
08051J4R7CBTTR
AVX
C3, C12, C13, C15
0.5 pF Chip Capacitors
08051J0R5BBTTR
AVX
C5, C6
4.7 F Chip Capacitors
C4532X7S2A475M230KB
TDK
C8, C9
3.3 F Chip Capacitors
C3225X7S2A335M200AB
TDK
C14, C17
0.2 pF Chip Capacitors
08051J0R2ABTTR
AVX
C16
0.1 pF Chip Capacitor
08051J0R1ABTTR
AVX
R1
51 , 1/4 W Chip Resistor
WCR1206-51FI
Welwyn
R2, R3
4.7 , 1/8 W Chip Resistors
WCR0805--4R7FI
Welwyn
Z1
2300--2700 MHz Band, 90, 5 dB Hybrid Coupler
X3C25P1-05S
Anaren
PCB
0.030, r = 3.5
RF35A2
Taconic
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
RF Device Data
Freescale Semiconductor, Inc.
19
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2013
Initial Release of Data Sheet
1
June 2013
Added part number AFT26H050W26SR3, p. 1
Added NI--780S--4L4L package isometric, p. 1, and Mechanical Outline, p. 17, 18
2
July 2013
AFT26HW050S data sheet frequency changed from 2620 MHz to 2496 MHz to show part performance
capability in the 2496--2690 MHz frequency range, p. 1
Fig. 3, Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @
Pout = 9 Watts Avg., updated to reflect part performance in the 2496--2690 MHz frequency range, p. 5
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
20
RF Device Data
Freescale Semiconductor, Inc.
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E 2013 Freescale Semiconductor, Inc.
AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3
Document
Number:
RF Device
DataAFT26HW050S
Rev.
2, 7/2013Semiconductor, Inc.
Freescale
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