Freescale Semiconductor
Technical Data
Document Number: AFT18S260W31S
Rev. 0, 4/2015
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 W RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 1805 to 1995 MHz.
AFT18S260W31SR3
AFT18S260W31GSR3
1800 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1800 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
1805 MHz
18.4
27.2
1840 MHz
19.3
1880 MHz
19.6
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
7.1
–35.2
–11
28.0
7.1
–35.0
–24
29.3
7.0
–34.0
–14
1900 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1800 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
1930 MHz
19.0
25.1
1960 MHz
19.3
1995 MHz
19.6
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
6.8
–34.2
–20
25.6
6.9
–34.5
–18
26.6
6.8
–33.9
–12
1805–1995 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
NI--780S--2L2LA
AFT18S260W31SR3
NI--780GS--2L2LA
AFT18S260W31GSR3
Features
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Optimized for Doherty Applications
4 VBW (1)
RFin/VGS 1
3 RFout/VDS
2 VBW (1)
(Top View)
Figure 1. Pin Connections
1. Device can operate with the VDD current
supplied through pin 2 or pin 4 alone.
Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT18S260W31SR3 AFT18S260W31GSR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
TC
–40 to +125
C
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
CW Operation @ TC = 25C
Derate above 25C
TJ
–40 to +225
C
CW
168
1.1
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.32
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 91C, 50 W CW, 28 Vdc, IDQ = 1800 mA, 1840 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1800 mAdc, Measured in Functional Test)
VGS(Q)
1.4
1.8
2.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, Pout = 50 W Avg., f = 1880 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
18.5
19.6
21.0
dB
Drain Efficiency
D
26.0
29.3
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
5.
PAR
6.3
7.0
—
dB
ACPR
—
–34.0
–30.0
dBc
IRL
—
–14
–6
dB
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
Part internally matched both on input and output.
Measurements made with device in straight lead configuration, before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
AFT18S260W31SR3 AFT18S260W31GSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1800 mA, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 269 W CW (1) Output Power
(3 dB Input Overdrive from 229 W CW (1) Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, 1805–1880 MHz Bandwidth
P1dB
—
229 (1)
—
W
—
–13
—
VBWres
—
85
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
1.2
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.001
—
dB/C
P1dB
—
0.011
—
dB/C
Pout @ 1 dB Compression Point, CW
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C) (1)
Table 5. Ordering Information
Device
AFT18S260W31SR3
AFT18S260W31GSR3
Tape and Reel Information
Package
R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel
NI--780S--2L2LA
NI--780GS--2L2LA
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C14
C4
VDD
VGG
C5
C6*
C7*
C8*
C9*
VGG
C12
C13
C20* C22*
C26*
C21* C23*
C17*
C25
R2
C10
C24
C16*
CUT OUT AREA
C2* C3*
C1*
C15
R1
C18
C11
VDD
D61216
AFT18S260W31S
Rev. 5
C19
*C1, C2, C3, C6, C7, C8, C9, C16, C17, C20, C21, C22, C23, and C26 are mounted vertically.
Figure 2. AFT18S260W31SR3 Test Circuit Component Layout
Table 6. AFT18S260W31SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6, C7, C9, C10, C17,
C18, C19, C20, C26
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C2
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C3
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C4, C5, C11, C12, C13, C14, 10 F Chip Capacitors
C15, C16, C21, C22
GRM32ER61H106KA12L
Murata
C8
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C23
2.0 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C24, C25
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
R1, R2
2.37 , 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D61216
MTL
AFT18S260W31SR3 AFT18S260W31GSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–1880 MHz
19.5
29
Gps
28
27
PARC
18
17.5
–31
–5
–32
–10
ACPR (dBc)
19
18.5
–33
17
–34
ACPR
16.5
16
1760
–35
IRL
1780
1800
1820 1840 1860
f, FREQUENCY (MHz)
1880
–15
–20
–25
–36
1920
1900
–30
–2.6
–2.8
–3
–3.2
–3.4
PARC (dB)
20
30
D
IRL, INPUT RETURN LOSS (dB)
20.5
Gps, POWER GAIN (dB)
31
VDD = 28 Vdc, Pout = 50 W (Avg.)
IDQ = 1800 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
D, DRAIN
EFFICIENCY (%)
21
–3.6
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
–5
VDD = 28 Vdc, Pout = 72 W (PEP), IDQ = 1800 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
–20 Frequency of 1840 MHz
IM3--U
IM3--L
–35
IM5--L
IM5--U
–50
IM7--L
–65
–80
1
IM7--U
10
300
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
19.2
19
18.8
18.6
VDD = 28 Vdc, IDQ = 1800 mA, f = 1840 MHz
Single--Carrier W--CDMA
0
35
–25
30
–30
D
ACPR
–1
25
–1 dB = 27 W
–2
20
–3 dB = 52.8 W
Gps
–2 dB = 39 W
–3
15
PARC
3.84 MHz Channel Bandwidth, Input
Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF
–4
–5
5
20
35
50
Pout, OUTPUT POWER (WATTS)
10
5
80
65
–35
–40
ACPR (dBc)
19.4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
19.6
1
D DRAIN EFFICIENCY (%)
19.8
–45
–50
–55
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1805–1880 MHz
Gps, POWER GAIN (dB)
20
18
1840 MHz
1805 MHz
16
1880 MHz
1840 MHz
1805 MHz
1840 MHz
50
–20
30
20
10
12
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
D
10
Gps
1805 MHz
1880 MHz
ACPR
–10
40
1880 MHz
14
60
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
0
300
–30
–40
–50
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1800 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
D, DRAIN EFFICIENCY (%)
22
–60
–70
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
6
27
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1800 mA
24
0
–6
–12
18
Gain
15
–18
12
9
1500
IRL (dB)
GAIN (dB)
21
–24
IRL
1600
1700
1800 1900 2000
f, FREQUENCY (MHz)
2100
2200
–30
2300
Figure 7. Broadband Frequency Response
AFT18S260W31SR3 AFT18S260W31GSR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 2110 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
0.90 – j2.84
0.93 + j2.68
1840
0.88 – j2.79
1.07 + j2.71
1880
1.12 – j2.86
1.35 + j2.80
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.10 – j3.64
18.1
55.0
313
52.8
–10
1.06 – j3.72
18.1
54.9
307
51.2
–10
1.06 – j3.80
18.2
54.5
284
50.8
–10
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
0.90 – j2.84
0.90 + j2.82
1.10 – j3.82
15.9
55.7
373
53.1
–15
1840
0.88 – j2.79
1.06 + j2.85
1.11 – j3.88
16.0
55.6
366
52.5
–16
1880
1.12 – j2.86
1.37 + j2.97
1.06 – j3.92
16.0
55.4
344
51.6
–15
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 2110 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
0.90 – j2.84
0.87 + j2.65
1.70 – j2.31
20.9
52.9
195
63.1
–17
1840
0.88 – j2.79
1.02 + j2.70
1.59 – j2.46
20.9
53.0
200
62.1
–17
1880
1.12 – j2.86
1.32 + j2.81
1.48 – j2.63
20.8
52.8
190
60.3
–16
Max Drain Efficiency
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.55 – j2.50
18.5
54.0
251
64.1
–25
1.02 + j2.84
1.50 – j2.56
18.7
53.9
245
63.2
–25
1.34 + j2.97
1.47 – j2.79
18.6
53.8
240
61.0
–24
f
(MHz)
Zsource
()
Zin
()
1805
0.90 – j2.84
0.85 + j2.75
1840
0.88 – j2.79
1880
1.12 – j2.86
Zload
()
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
–1
–1
–1.5
–1.5
52
E
–2.5
52.5
–3
53
53.5
–3.5
P
54
54.5
–4
53
2
REAL ()
1.5
1
60
–3
58
–3.5
–5
3
2.5
56
54
P
52
50
48
46
2
REAL ()
1.5
1
2.5
3
Figure 9. P1dB Load Pull Efficiency Contours (%)
–1
–1
22
–1.5
21.5
IMAGINARY ()
20.5
–3
20
–3.5
P
19.5
–4
1
1.5
2
REAL ()
3
2.5
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
–2.5
E
–3
–16
–14
–12
–3.5
P
–10
–4.5
18.5
18
–18
–20
–4
19
–4.5
–22
–2
21
E
–2.5
–24
–1.5
–2
IMAGINARY ()
54
62
–4.5
Figure 8. P1dB Load Pull Output Power Contours (dBm)
–5
E
–2.5
–4
–4.5
–5
52
–2
IMAGINARY ()
IMAGINARY ()
51
51.5
–2
48
50
–5
–8
1.5
1
2
REAL ()
2.5
3
Figure 11. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18S260W31SR3 AFT18S260W31GSR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
–2
51.5
62
53
52.5
–2.5
E
52
–3
54
54.5
55
–3.5
55.5
P
–4
E
53.5
IMAGINARY ()
IMAGINARY ()
–2.5
–2
60
58
–3
56
–3.5
54
P
–4
52
53
–4.5
–5
0
54
0.5
1
1.5
REAL ()
2.5
2
–5
3
Figure 12. P3dB Load Pull Output Power Contours (dBm)
0.5
0
1
1.5
REAL ()
2.5
2
3
–2
19
–2.5
E
18.5
–3
18
–3.5
15.5
–4.5
17.5
17
P
–4
0.5
1
1.5
REAL ()
–22
–24
E
–20
–3
–18
–3.5
P
–4
–16
–12
16.5
–14
–4.5
16
0
–26
–28
–2.5
IMAGINARY ()
IMAGINARY ()
48
Figure 13. P3dB Load Pull Efficiency Contours (%)
–2
–5
50
–4.5
52.5
52
–12
2
2.5
3
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
–5
0
0.5
1
1.5
REAL ()
2
2.5
3
Figure 15. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
9
C14
C4
VDD
VGG
R1
C7*
C2* C3*
C1*
C8*
C24
C16*
C12
C20* C22*
C13
C21*
R2
C26*
C23*
C17*
C9*
C10
VGG
C15
CUT OUT AREA
C5
C6*
C25
C18
C11
VDD
AFT18S260W
Rev. 5
D61216
C19
*C1, C2, C3, C6, C7, C8, C9, C16, C17, C20, C21, C22, C23, and C26 are mounted vertically.
Figure 16. AFT18S260W31SR3 Test Circuit Component Layout — 1930–1995 MHz
Table 9. AFT18S260W31SR3 Test Circuit Component Designations and Values — 1930–1995 MHz
Part
Description
Part Number
Manufacturer
C1, C26
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C2, C3
1.2 pF Chip Capacitors
ATC100B1R2BT500XT
ATC
C4, C5, C10, C11, C12, C13, 10 F, Chip Capacitors
C14, C15, C18, C19
GRM32ER61H106KA12L
Murata
C6, C7, C8, C9
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C16, C17
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C20, C23
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C21
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C22
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C24, C25
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
R1, R2
2.37 , 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D61216
MTL
AFT18S260W31SR3 AFT18S260W31GSR3
10
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1930–1995 MHz
19.5
19
26
Gps
24
22
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
18.5
18
PARC
17.5
17
–12
–34
ACPR
1920
–31
–33
IRL
1900
–9
–32
16.5
16
1880
–30
1940 1960 1980
f, FREQUENCY (MHz)
2000
–35
2040
2020
–15
–18
–21
–24
–2.6
–2.8
–3
–3.2
–3.4
PARC (dB)
Gps, POWER GAIN (dB)
20
28
IRL, INPUT RETURN LOSS (dB)
20.5
30
D
D, DRAIN
EFFICIENCY (%)
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
ACPR (dBc)
21
–3.6
Figure 17. Single--Carrier Output Peak--to--Average Ratio
Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg.
–10
ACPR 50
–20
19
40
1995 MHz
1930 MHz
D
1995 MHz
1960 MHz
1960 MHz
1930 MHz
18
Gps
17
16
15
1995 MHz
1
1960 MHz
30
20
10
1930 MHz
10
Pout, OUTPUT POWER (WATTS) AVG.
100
0
200
–30
–40
–50
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 1800 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB
20 @ 0.01% Probability on CCDF
D, DRAIN EFFICIENCY (%)
60
21
–60
–70
Figure 18. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
6
22
0
20
–6
18
–12
16
–18
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1800 mA
14
12
1460
1580
1700
1820
IRL (dB)
GAIN (dB)
Gain
–24
IRL
1940
2060
2180
2300
–30
2420
f, FREQUENCY (MHz)
Figure 19. Broadband Frequency Response
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
11
Table 10. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 2107 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.11 – j4.04
18.6
54.5
284
50.7
–10
1.12 – j4.30
18.5
54.5
282
49.5
–11
18.5
54.3
270
47.1
–10
f
(MHz)
Zsource
()
Zin
()
1930
1.49 – j3.03
1.79 + j2.85
1960
1.62 – j3.06
2.11 + j2.78
1995
1.98 – j2.99
2.53 + j2.49
1.21 – j4.65
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1930
1.49 – j3.03
1.88 + j3.04
1.11 – j4.22
16.2
55.3
342
50.4
–16
1960
1.62 – j3.06
2.26 + j2.97
1.16 – j4.40
16.4
55.3
340
50.9
–16
1995
1.98 – j2.99
2.76 + j2.61
1.26 – j4.71
16.5
55.2
329
49.2
–16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 11. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 2107 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1930
1.49 – j3.03
1.73 + j2.80
1.33 – j2.89
21.2
52.8
193
60.7
–18
1960
1.62 – j3.06
2.00 + j2.70
1.39 – j3.00
21.3
52.7
186
59.9
–17
1995
1.98 – j2.99
2.36 + j2.41
1.43 – j3.39
21.1
52.8
189
56.7
–15
Max Drain Efficiency
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.33 – j3.00
19.1
53.7
237
61.6
–26
2.20 + j2.87
1.39 – j3.09
19.1
53.6
230
61.1
–25
2.64 + j2.48
1.38 – j3.43
19.1
53.7
235
58.5
–22
f
(MHz)
Zsource
()
Zin
()
1930
1.49 – j3.03
1.84 + j3.00
1960
1.62 – j3.06
1995
1.98 – j2.99
Zload
()
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18S260W31SR3 AFT18S260W31GSR3
12
RF Device Data
Freescale Semiconductor, Inc.
–1
–1
–1.5
–1.5
–2
–2
50.5
51
–2.5
–3
51.5
52
E
52.5
–3.5
–5
53
53.5
–4
3
2.5
50
E
58
–3.5
56
54
52
50
P
46
44
2
REAL ()
1.5
1
46
48
44
2.5
3
Figure 21. P1dB Load Pull Efficiency Contours (%)
–1
–1
–1.5
–8
–1.5
22
–2
21.5
–2.5
21
–3
E
20.5
–3.5
20
–4
18
1
18.5
1.5
2
REAL ()
–18
–2.5
–20
–16
–3
E
–14
–3.5
–12
–4
19.5
P
–4.5
–10
–2
IMAGINARY ()
IMAGINARY ()
–3
–5
Figure 20. P1dB Load Pull Output Power Contours (dBm)
–5
48
–2.5
–4.5
2
REAL ()
1.5
1
44
–4
54
P
–4.5
IMAGINARY ()
IMAGINARY ()
P1dB – TYPICAL LOAD PULL CONTOURS — 1960 MHz
P
–4.5
19
3
2.5
Figure 22. P1dB Load Pull Gain Contours (dB)
NOTE:
–5
–10
1.5
1
2
REAL ()
2.5
3
Figure 23. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
13
P3dB – TYPICAL LOAD PULL CONTOURS — 1960 MHz
–1
–1
–1.5
–1.5
51.5
52
–2.5
52.5
53
–3
E
53.5
–3.5
54
–4
P
–4.5
–5
55
2
REAL ()
1.5
3
2.5
–1
–1.5
–1.5
19
–3
E
18.5
–3.5
18
–4
–5
1
1.5
2
REAL ()
3
2.5
Figure 26. P3dB Load Pull Gain Contours (dB)
NOTE:
54
50
48
2
REAL ()
1.5
1
46
3
2.5
–16
–26
–2.5
–28
–3
–24
E
–5
–22
–20
–3.5
–18
–16
P
–4.5
17
16.5
16
56
52
–4
17.5
P
–4.5
58
P
–2
19.5
IMAGINARY ()
IMAGINARY ()
–2.5
60
Figure 25. P3dB Load Pull Efficiency Contours (%)
–1
20
E
–3.5
–5
Figure 24. P3dB Load Pull Output Power Contours (dBm)
–2
52
–3
–4.5
55
1
50
–2.5
–4
54.5
46
48
–2
IMAGINARY ()
IMAGINARY ()
–2
–14
1.5
1
2
REAL ()
2.5
3
Figure 27. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18S260W31SR3 AFT18S260W31GSR3
14
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
15
AFT18S260W31SR3 AFT18S260W31GSR3
16
RF Device Data
Freescale Semiconductor, Inc.
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
17
AFT18S260W31SR3 AFT18S260W31GSR3
18
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1.
2.
3.
4.
Go to http://www.freescale.com/rf
Search by part number
Click part number link
Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2015
Description
Initial Release of Data Sheet
AFT18S260W31SR3 AFT18S260W31GSR3
RF Device Data
Freescale Semiconductor, Inc.
19
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All
other product or service names are the property of their respective owners.
E 2015 Freescale Semiconductor, Inc.
AFT18S260W31SR3 AFT18S260W31GSR3
Document Number: AFT18S260W31S
Rev. 0, 4/2015
20
RF Device Data
Freescale Semiconductor, Inc.
工商网监
湘ICP备2023018690号
