AFT27S010NT1

Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 3, 12/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz. AFT27S010NT1  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) 2100 MHz Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 21.6 23.2 9.1 --42.0 --11 2140 MHz 21.8 23.0 9.0 --41.5 --15 2170 MHz 21.7 22.6 8.7 --41.7 --15 Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2300 MHz 21.2 23.6 9.0 --40.9 --10 2350 MHz 21.6 22.6 8.6 --40.0 --22 2400 MHz 20.7 21.0 8.3 --40.1 --9 Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2500 MHz 19.6 22.0 9.8 --44.8 --7 2600 MHz 21.0 22.7 9.4 --41.4 --15 2700 MHz 19.6 21.2 8.9 --39.7 --5 728–3600 MHz, 1.26 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR 2300 MHz PLD--1.5W PLASTIC 2600 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) 700 MHz Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 728 MHz 24.3 25.5 9.3 --44.0 --12 748 MHz 24.3 24.7 9.4 --43.9 --12 768 MHz 24.3 23.8 9.5 --43.6 --12 Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 3400 MHz 14.7 15.8 9.0 --44.9 --7 3500 MHz 16.0 16.8 9.0 --44.9 --8 3600 MHz 15.0 17.4 8.6 --44.2 --4 RFin/VGS RFout/VDS (Top View) Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections 3500 MHz 1. All data measured in fixture with device soldered to heatsink. Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Universal Broadband Driven Device with Internal RF Feedback  Freescale Semiconductor, Inc., 2013–2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT27S010NT1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C (1,2) TJ --40 to +150 C Characteristic Symbol Value (2,3) Unit RJC 3.5 C/W Operating Junction Temperature Range Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 77C, 1.3 W CW, 28 Vdc, IDQ = 90 mA, 2140 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 12.1 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc, Measured in Functional Test) VGS(Q) 1.5 1.8 2.3 Vdc Drain--Source On--Voltage (VGS = 6 Vdc, ID = 121 mAdc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) AFT27S010NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 20.0 21.7 — dB Drain Efficiency D 18.5 21.5 — % ACPR — --40.6 --37.9 dBc IRL — --14 --9 dB Adjacent Channel Power Ratio Input Return Loss Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 90 mA, f = 2140 MHz VSWR 5:1 at 32 Vdc, 13.9 W CW Output Power (3 dB Input Overdrive from 10 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 10 — W  — --12.6 —  VBWres — 120 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 1.26 W Avg. GF — 0.20 — dB Gain Variation over Temperature (--30C to +85C) G — 0.011 — dB/C P1dB — 0.004 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 2110--2170 MHz frequency range.) VBW Resonance Point (IMD Seventh Order Intermodulation Inflection Point) Output Power Variation over Temperature (--30C to +85C) Table 6. Ordering Information Device AFT27S010NT1 Tape and Reel Information T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel Package PLD--1.5W AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 3 VGG VDD C7 C13 C6 C12 C8 R1 C1* Q1 C2 C5* C4 C3 C9 AFT27S010N Rev. 2 2100MHz C10 C11 D53402 VDD *C1 and C5 are mounted vertically. NOTE: All data measured in fixture with device soldered to heatsink. Figure 2. AFT27S010NT1 Test Circuit Component Layout — 2110--2170 MHz Table 7. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2170 MHz Part Description Part Number Manufacturer C1, C5, C6, C8, C9 9.1 pF Chip Capacitors ATC100B9R1JT500XT ATC C2 1.1 pF Chip Capacitor ATC100B1R1JT500XT ATC C3 2.0 pF Chip Capacitor ATC100B2R0JT500XT ATC C4 1.0 pF Chip Capacitor ATC100B1R0JT500XT ATC C7, C10, C11, C12, C13 10 F Chip Capacitors GRM32ER61H106KA12L Murata Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale R1 2.37  Chip Resistor CRCW12062R37FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D53402 MTL AFT27S010NT1 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 2110--2170 MHz 24 23 VDD = 28 Vdc, Pout = 1.26 W (Avg.) IDQ = 90 mA, Single--Carrier W--CDMA 22 Gps 21 22 21 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 20 --40 --6 19 --41 --10 18 --42 17 ACPR --43 16 --44 20 IRL PARC 15 2060 2080 2100 2120 2140 2160 2180 2200 ACPR (dBc) Gps, POWER GAIN (dB) 23 --14 --18 --22 --45 2220 --26 --0.4 --0.6 --0.8 --1 --1.2 PARC (dB) 24 IRL, INPUT RETURN LOSS (dB) D D, DRAIN EFFICIENCY (%) 25 --1.4 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg. --20 IM3--U --30 IM3--L IM5--U --40 IM5--L IM7--U --50 --60 V = 28 Vdc, P = 7.6 W (PEP), I = 90 mA DD out DQ Two--Tone Measurements, (f1 + f2)/2 = Center Frequency of 2140 MHz --70 10 1 IM7--L 100 200 TWO--TONE SPACING (MHz) 22.5 0 22 21.5 21 20.5 20 D PARC --1 dB = 1.4 W --1 --5 --2 dB = 1.9 W 0.5 1 1.5 2 --25 15 VDD = 28 Vdc, IDQ = 90 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF --4 30 20 --3 dB = 2.55 W ACPR --3 --20 25 Gps --2 35 2.5 --30 --35 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 23 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing --40 10 --45 5 --50 3 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 2110--2170 MHz 21 2170 MHz 2140 MHz 2110 MHz 20 2170 MHz 2140 MHz 2110 MHz 50 --30 40 30 10 2110 MHz 18 0.1 --25 20 2170 MHz 2140 MHz 19 60 D 0 10 1 --35 --40 --45 ACPR (dBc) VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth ACPR 23 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF Gps 22 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 24 --50 --55 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 35 Gain GAIN (dB) 20 25 15 VDD = 28 Vdc Pin = 0 dBm IDQ = 90 mA 18 5 --5 16 IRL 14 12 1950 IRL (dB) 22 1990 2030 2070 2110 2150 --15 2190 2230 --25 2270 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response AFT27S010NT1 6 RF Device Data Freescale Semiconductor, Inc. Table 8. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 5.85 + j3.49 21.0 41.2 13 60.2 --12 0.877 + j0.537 5.79 + j3.28 20.8 41.2 13 59.5 --13 1.26 + j0.455 5.57 + j3.12 20.7 41.1 13 60.1 --11 f (MHz) Zsource () Zin () 2110 1.23 -- j0.107 0.698 + j0.572 2140 1.08 -- j0.422 2170 1.12 -- j0.0337 Zload () (1) Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () 2110 1.23 -- j0.107 0.592 + j0.741 6.75 + j2.96 18.7 42.0 16 59.6 --18 2140 1.08 -- j0.422 0.807 + j0.78 6.62 + j2.72 18.5 42.0 16 58.6 --20 2170 1.12 -- j0.0337 1.25 + j0.806 6.47 + j2.61 18.4 42.0 16 59.8 --17 (W) D (%) AM/PM () Gain (dB) (dBm) (W) D (%) AM/PM () (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) 2110 1.23 -- j0.107 0.609 + j0.446 3.56 + j6.04 22.7 39.7 9 67.5 --20 2140 1.08 -- j0.422 0.736 + j0.434 3.63 + j5.62 22.4 39.9 10 66.6 --21 2170 1.12 -- j0.0337 1.03 + j0.312 3.37 + j5.39 22.5 39.6 9 67.3 --19 Max Drain Efficiency P3dB f (MHz) Zsource () Zin () Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 2110 1.23 -- j0.107 0.512 + j0.627 3.80 + j5.81 20.5 40.5 11 67.3 --29 2140 1.08 -- j0.422 0.671 + j0.667 3.77 + j5.41 20.3 40.6 11 65.9 --31 2170 1.12 -- j0.0337 1.05 + j0.666 3.83 + j5.15 20.2 40.6 12 67.1 --27 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 7 P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz 8 8 37.5 38 IMAGINARY () 6 40 7 39 40.5 E 5 41 4 P 3 2 E 62 52 60 66 5 58 4 56 P 3 54 2 39.5 38 2 39 3 4 5 6 7 9 8 0 10 52 50 1 1 0 64 6 IMAGINARY () 7 39.5 38.5 3 2 4 6 5 7 8 9 10 REAL () REAL () Figure 8. P1dB Load Pull Output Power Contours (dBm) Figure 9. P1dB Load Pull Efficiency Contours (%) 8 8 23.5 IMAGINARY () 22.5 23 6 E 21.5 4 21 P 3 20.5 2 3 4 5 6 7 --18 E 5 --16 4 --24 P 3 --14 1 19.5 2 --22 2 20 1 0 --28 6 22 5 --20 --26 7 IMAGINARY () 7 8 9 10 0 --12 2 3 4 5 6 7 8 9 REAL () REAL () Figure 10. P1dB Load Pull Gain Contours (dB) Figure 11. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 10 Gain Drain Efficiency Linearity Output Power AFT27S010NT1 8 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz 8 8 IMAGINARY () 6 39 40 38.5 39.5 40.5 7 41 41.5 E 5 4 3 P 3 1 1 3 4 5 6 7 9 8 0 10 58 4 2 2 60 62 64 E 5 2 0 54 6 IMAGINARY () 7 38 P 56 54 52 50 2 3 4 6 5 7 8 9 10 REAL () REAL () Figure 12. P3dB Load Pull Output Power Contours (dBm) Figure 13. P3dB Load Pull Efficiency Contours (%) 8 8 21.5 IMAGINARY () 6 E 5 7 20.5 21 20 19.5 4 19 3 P 18.5 2 3 4 6 5 7 --34 --30 4 --26 --22 --24 3 P 8 --20 1 17.5 2 --28 E 5 2 18 1 0 --32 6 IMAGINARY () 7 9 10 0 2 3 4 5 6 7 8 9 10 REAL () REAL () Figure 14. P3dB Load Pull Gain Contours (dB) Figure 15. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 9 2500--2700 MHz VGG VDD C13 C12 C11 C6 C5 C7 R1 C1 C4 Q1 C3 C2 C8 C9 AFT27S010N Rev. 2 2300MHz/2500MHz C10 D53817 VDD NOTE: All data measured in fixture with device soldered to heatsink. Figure 16. AFT27S010NT1 Test Circuit Component Layout — 2500--2700 MHz Table 10. AFT27S010NT1 Test Circuit Component Designations and Values — 2500--2700 MHz Part Description Part Number Manufacturer C1, C4, C5, C7, C8 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC C2 1.2 pF Chip Capacitor ATC100B1R2JT500XT ATC C3 1 pF Chip Capacitor ATC100B1R0JT500XT ATC C6, C9, C10, C11, C12 10 F Chip Capacitors GRM32ER61H106KA12L Murata C13 220 F, 50 V Electrolytic Capacitor 227CKS050M Illinois Capacitor Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale R1 4.75  Chip Resistor CRCW12064R75FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D53817 MTL AFT27S010NT1 10 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 2500--2700 MHz Gps, POWER GAIN (dB) 22.5 22 VDD = 28 Vdc, Pout = 1.26 W (Avg.) IDQ = 90 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth 22 21.5 21 20 Gps 21 IRL 20.5 PARC 20 19.5 19 2510 0 --38 --5 --40 --42 ACPR 18.5 2480 --36 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 2540 2570 2600 2630 2660 2690 --44 --46 2720 --10 --15 --20 --25 0 --0.5 --1 --1.5 --2 PARC (dB) 23 IRL, INPUT RETURN LOSS (dB) 23 ACPR (dBc) D D, DRAIN EFFICIENCY (%) 24 23.5 --2.5 f, FREQUENCY (MHz) Figure 17. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg. 2500 MHz Gps 20 ACPR 18 2700 MHz 2700 MHz 2600 MHz 16 2600 MHz 2500 MHz 14 D 12 --10 55 --20 45 35 25 2500 MHz 2700 MHz 2600 MHz 1 0.3 65 15 10 5 20 --30 --40 --50 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier, W--CDMA 3.84 MHz Channel Bandwidth, Input Signal = 9.9 dB @ 22 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 24 --60 --70 Pout, OUTPUT POWER (WATTS) AVG. Figure 18. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 30 5 Gain 20 0 15 --5 10 --10 IRL 5 0 2300 IRL (dB) GAIN (dB) 25 10 VDD = 28 Vdc Pin = 0 dBm IDQ = 90 mA --15 2400 2500 2600 2700 2800 --20 2900 f, FREQUENCY (MHz) Figure 19. Broadband Frequency Response AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 11 2300--2400 MHz VDD VGG C13 C12 C11 C6 C5 C7 R1 C1 C14 Q1 C2 C4 C3 C8 C9 AFT27S010N Rev. 2 2300MHz/2500MHz C10 D53817 VDD NOTE: All data measured in fixture with device soldered to heatsink. Figure 20. AFT27S010NT1 Test Circuit Component Layout — 2300--2400 MHz Table 11. AFT27S010NT1 Test Circuit Component Designations and Values — 2300--2400 MHz Part Description Part Number Manufacturer C1, C4, C5, C7, C8 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC C2, C14 1 pF Chip Capacitors ATC100B1R0JT500XT ATC C3 1.2 pF Chip Capacitor ATC100B1R2JT500XT ATC C6, C9, C10, C11, C12 10 F Chip Capacitors GRM32ER61H106KA12L Murata C13 220 F, 50 V Electrolytic Capacitor 227CKS050M Illinois Capacitor Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale R1 4.75 , Chip Resistor CRCW12064R75FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D53817 MTL AFT27S010NT1 12 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 2300--2400 MHz 21.4 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 21.2 G ps 21 22 D 20 ACPR 20.8 20.6 21 20 2290 2305 2320 2335 --40 --5 --42 IRL 20.2 0 --41 PARC 20.4 --39 --43 2350 2365 2380 2395 --10 --15 --20 --25 --44 2410 0 --0.5 --1 --1.5 --2 PARC (dB) 21.6 Gps, POWER GAIN (dB) 23 VDD = 28 Vdc Pout = 1.26 W (Avg.) IDQ = 90 mA ACPR (dBc) 21.8 D, DRAIN EFFICIENCY (%) 24 IRL, INPUT RETURN LOSS (dB) 22 --2.5 f, FREQUENCY (MHz) Figure 21. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg. 2300 MHz 22 2400 MHz 20 50 0 30 18 2350 MHz ACPR D 14 10 2350 MHz 40 Gps 16 60 2350 MHz 0.3 2300 MHz 2300 MHz 2400 MHz 10 2400 MHz 10 1 20 0 20 --10 --20 --30 ACPR (dBc) Gps, POWER GAIN (dB) 24 VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal = 9.9 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 26 --40 --50 Pout, OUTPUT POWER (WATTS) AVG. Figure 22. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 30 5 0 Gain 20 --5 15 --10 --15 10 5 IRL (dB) GAIN (dB) 25 IRL VDD = 28 Vdc Pin = 0 dBm IDQ = 90 mA 0 2050 2150 --20 2250 2350 2450 2550 --25 2650 f, FREQUENCY (MHz) Figure 23. Broadband Frequency Response AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 13 Table 12. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 5.39 + j2.23 20.1 40.9 12 55.9 --12 0.948 + j1.96 5.09 + j1.86 19.8 40.9 12 55.1 --12 1.29 + j1.95 4.51 + j1.56 19.2 40.8 12 55.8 --10 0.985 -- j3.50 0.743 + j3.66 4.81 + j1.10 19.0 41.3 13 56.2 --14 1.10 -- j3.13 1.48 + j2.98 4.14 + j0.987 19.0 41.0 13 57.5 --12 f (MHz) Zsource () Zin () 2300 1.12 -- j1.10 0.995 + j1.38 2400 1.06 -- j1.59 2500 1.00 -- j1.60 2600 2690 Zload () (1) Max Output Power P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 6.28 + j1.74 17.8 41.7 15 55.0 --19 0.861 + j2.23 5.86 + j1.41 17.5 41.7 15 54.4 --19 1.37 + j2.32 5.40 + j1.17 16.9 41.7 15 55.8 --17 0.985 -- j3.50 0.579 + j3.82 5.37 + j0.912 16.9 42.0 16 55.8 --22 1.10 -- j3.13 1.74 + j3.43 5.04 + j0.759 16.8 41.8 15 57.1 --18 f (MHz) Zsource () Zin () 2300 1.12 -- j1.10 0.919 + j1.64 2400 1.06 -- j1.59 2500 1.00 -- j1.60 2600 2690 Zload () (2) (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 13. Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () 2300 1.12 -- j1.10 0.855 + j1.22 3.36 + j4.23 21.6 39.8 9 61.9 --20 2400 1.06 -- j1.59 0.829 + j1.80 3.34 + j3.53 21.2 39.9 10 60.4 --19 2500 1.00 -- j1.60 1.04 + j1.82 3.21 + j3.00 20.8 40.0 10 61.1 --16 2600 0.985 -- j3.50 0.709 + j3.49 3.17 + j2.53 20.0 40.5 11 60.7 --20 2690 1.10 -- j3.13 1.14 + j2.91 2.87 + j2.16 20.4 40.2 10 62.0 --18 Gain (dB) (dBm) (W) D (%) AM/PM () Max Drain Efficiency P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2300 1.12 j1.10 0.803 + j1.51 3.96 + j4.10 19.4 40.7 12 61.1 --27 2400 1.06 -- j1.59 0.757 + j2.07 3.70 + j3.45 19.1 40.6 12 59.8 --27 2500 1.00 -- j1.60 1.15 + j2.18 3.58 + j2.94 18.7 40.8 12 61.2 --24 2600 0.985 -- j3.50 0.556 + j3.73 4.15 + j2.29 17.8 41.5 14 59.7 --26 2690 1.10 -- j3.13 1.43 + j3.33 3.40 + j2.01 18.2 41.1 13 61.7 --25 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT27S010NT1 14 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz 6 6 IMAGINARY () 5 39 38 38.5 39.5 37.5 40 4 3 4 E 40.5 2 P 3 0 0 2 40 39.5 3 4 5 7 6 --1 8 58 60 P 1 39 E 2 1 --1 46 46 5 IMAGINARY () 37 56 52 54 50 48 46 3 2 4 5 6 7 8 REAL () REAL () Figure 24. P1dB Load Pull Output Power Contours (dBm) Figure 25. P1dB Load Pull Efficiency Contours (%) 6 6 5 21 3 20.5 20 E 19.5 2 P 19 1 18.5 18 --24 --20 --16 3 E --18 --14 2 --12 --10 0 2 3 4 5 P 1 0 --1 --22 4 IMAGINARY () IMAGINARY () 4 5 21.5 22 6 7 8 --1 2 3 4 5 6 7 REAL () REAL () Figure 26. P1dB Load Pull Gain Contours (dB) Figure 27. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 8 Gain Drain Efficiency Linearity Output Power AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 15 P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz 6 6 IMAGINARY () 5 39 39.5 38.5 4 E 41.5 2 P 1 3 E 60 58 54 P 52 50 0 40 2 41 3 4 48 56 2 1 0 --1 50 4 41 3 48 50 46 5 40.5 40 IMAGINARY () 37.5 38 5 7 6 --1 8 48 46 2 3 4 5 7 6 8 REAL () REAL () Figure 28. P3dB Load Pull Output Power Contours (dBm) Figure 29. P3dB Load Pull Efficiency Contours (%) 6 6 5 5 19 3 18.5 18 E 17.5 2 --1 17 P 1 2 3 4 --24 --30 --26 3 --20 --18 E --16 2 P 1 16.5 16 0 --28 4 IMAGINARY () 4 IMAGINARY () 19.5 20 --14 --22 0 5 6 7 8 --1 2 3 4 5 6 7 REAL () REAL () Figure 30. P3dB Load Pull Gain Contours (dB) Figure 31. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 8 Gain Drain Efficiency Linearity Output Power AFT27S010NT1 16 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 3400--3600 MHz 17 Input Signal PAR = 9.9 dB @ 0.01% 16 Probability on CCDF 15 D 16 Gps 15.5 15 PARC 14.5 14 13 3380 3440 3470 --44 --2 --45 --45.5 IRL 3410 0 --44.5 ACPR 13.5 --43.5 3500 3530 3560 --46 3620 3590 --4 --6 --8 --10 --0.6 --0.8 --1 --1.2 --1.4 PARC (dB) 16.5 18 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 17 D, DRAIN EFFICIENCY (%) 17.5 19 VDD = 28 Vdc, Pout = 1.26 W (Avg.) IDQ = 80 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth ACPR (dBc) 18 --1.6 f, FREQUENCY (MHz) Figure 32. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg. 15 3500 MHz 14 3400 MHz 12 --10 50 --20 ACPR 40 3600 MHz D 30 3500 MHz 13 60 3400 MHz 20 3600 MHz 3500 MHz 3600 MHz Gps 10 3400 MHz 11 0.1 0 10 1 --30 --40 --50 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ = 80 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% 16 Probability on CCDF D, DRAIN EFFICIENCY (%) 17 --60 --70 Pout, OUTPUT POWER (WATTS) AVG. Figure 33. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 2 18 Gain 0 14 --2 12 --4 10 --6 IRL 8 6 3100 3200 3300 3400 3500 3600 IRL (dB) GAIN (dB) 16 VDD = 28 Vdc Pin = 0 dBm IDQ = 80 mA --8 3700 3800 --10 3900 f, FREQUENCY (MHz) Figure 34. Broadband Frequency Response AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 17 728--768 MHz VDD VGG C15 C14 C11 C10 C6 C5 C2 C3 C4 C8 C7* R1 C1* C9* Q1 AFT27S010N Rev. 1 728MHz C12 C13 D53406 C16 C17 VDD *C1, C7 and C9 are mounted vertically. NOTE: All data measured in fixture with device soldered to heatsink. Figure 35. AFT27S010NT1 Test Circuit Component Layout — 728--768 MHz Table 14. AFT27S010NT1 Test Circuit Component Designations and Values — 728--768 MHz Part Description Part Number Manufacturer C1, C9 82 pF Chip Capacitors ATC100B820JT500XT ATC C2 3.9 pF Chip Capacitor ATC100B3R9JT500XT ATC C3 1.7 pF Chip Capacitor ATC100B1R7JT500XT ATC C4 2.7 pF Chip Capacitor ATC100B2R7JT500XT ATC C5, C10, C11, C12, C13 33 pF Chip Capacitors ATC100B330JT500XT ATC C6, C14, C15, C16, C17 10 F Chip Capacitors GRM32ER61H106KA12L Murata C7 3.9 pF Chip Capacitor ATC100B3R9JT500XT ATC C8 0.5 pF Chip Capacitor ATC100B0R5JT500XT ATC Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale R1 10  Chip Resistor CWCR120610R0JNEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D53406 MTL AFT27S010NT1 18 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 728--768 MHz 25 D 24 23 Gps IRL 24.1 24 ACPR --40 --11 --41 --12 --42 PARC 23.9 --43 23.8 --44 23.7 710 --45 720 730 740 750 760 770 780 --13 --14 --15 --16 790 0 --0.2 --0.4 --0.6 --0.8 PARC (dB) 24.2 26 IRL, INPUT RETURN LOSS (dB) 24.5 3.84 MHz Channel Bandwidth 24.4 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 24.3 D, DRAIN EFFICIENCY (%) 24.6 Gps, POWER GAIN (dB) 27 VDD = 28 Vdc, Pout = 1.26 W (Avg.) IDQ = 80 mA, Single--Carrier W--CDMA ACPR (dBc) 24.7 --1 f, FREQUENCY (MHz) Figure 36. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg. 24 22 768 MHz 748 MHz 748 MHz ACPR 50 --20 30 20 728 MHz 18 --10 40 Gps 20 60 768 MHz D 10 728 MHz --30 --40 --50 --60 0 16 0.3 1 ACPR (dBc) 768 MHz 748 MHz VDD = 28 Vdc, IDQ = 80 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 26 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 728 MHz D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 28 --70 20 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 37. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 28 0 GAIN (dB) 24 --2 Gain --4 22 --6 20 --8 18 --10 IRL (dB) VDD = 28 Vdc Pin = 0 dBm IDQ = 80 mA 26 IRL 16 550 600 650 700 750 800 850 900 --12 950 f, FREQUENCY (MHz) Figure 38. Broadband Frequency Response AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 19 Table 15. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQ = 81 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 728 2.05 + j12.1 1.72 -- j11.7 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 15.1 + j6.07 27.2 41.3 14 59.8 --15 748 2.04 + j11.1 1.69 -- j11.2 14.6 + j5.90 27.0 41.5 14 60.2 --15 768 1.94 + j10.5 1.69 -- j10.8 14.6 + j5.49 26.7 41.5 14 60.1 --14 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () 728 2.05 + j12.1 1.53 -- j11.7 16.1 + j4.43 24.7 42.3 17 61.9 --17 Gain (dB) (dBm) (W) D (%) AM/PM () 748 2.04 + j11.1 1.50 -- j11.3 15.1 + j4.52 24.6 42.4 17 61.7 --17 768 1.94 + j10.5 1.46 -- j10.9 14.8 + j4.54 24.5 42.4 17 61.7 --16 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 16. Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQ = 81 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 728 2.05 + j12.1 1.97 -- j10.7 18.5 + j16.4 27.9 39.7 9 68.4 --13 748 2.04 + j11.1 1.81 -- j9.83 16.7 + j20.1 28.6 38.9 8 68.5 --14 768 1.94 + j10.5 1.83 -- j9.69 17.4 + j18.0 28.3 39.5 9 69.2 --14 Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 728 2.05 + j12.1 1.69 -- j10.8 748 2.04 + j11.1 1.58 -- j10.4 768 1.94 + j10.5 1.51 -- j9.87 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 18.3 + j18.6 26.1 40.3 11 73.7 --14 17.5 + j17.5 26.4 40.5 11 77.4 --14 15.8 + j19.1 26.8 40.0 10 72.8 --15 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT27S010NT1 20 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz 25 25 37.5 38 38.5 39 39.5 E 40.5 10 41 P 5 0 --5 12 10 15 66 10 64 P 5 62 60 58 56 0 40.5 40 E 68 40 15 66 20 IMAGINARY () IMAGINARY () 20 52 14 16 20 18 --5 24 22 10 12 14 16 18 20 54 22 24 REAL () REAL () Figure 39. P1dB Load Pull Output Power Contours (dBm) Figure 40. P1dB Load Pull Efficiency Contours (%) 25 25 30.5 29.5 30 IMAGINARY () 20 E 29 15 28.5 28 27.5 10 27 26.5 P 5 IMAGINARY () 20 15 --10 --12 E --22 --20 --18 10 --16 P 5 --14 0 --5 0 10 12 14 16 18 20 22 24 --5 10 12 14 16 18 20 22 24 REAL () REAL () Figure 41. P1dB Load Pull Gain Contours (dB) Figure 42. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 21 P3dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz 25 25 38.5 39 39.5 20 40 E 41 IMAGINARY () IMAGINARY () 20 40.5 15 41.5 10 42 5 P E 76 74 15 70 68 66 5 P 64 62 60 41.5 41 12 10 72 10 0 0 --5 68 14 16 20 18 --5 24 22 12 10 14 16 18 20 22 24 REAL () REAL () Figure 43. P3dB Load Pull Output Power Contours (dBm) Figure 44. P3dB Load Pull Efficiency Contours (%) 25 28 27.5 --8 26.5 27 20 20 IMAGINARY () E 25.5 10 25 5 --5 24.5 P 10 12 14 16 18 15 --24 --12 --20 --22 10 --14 5 P --18 24 0 --10 E 26 15 IMAGINARY () 25 --16 0 20 22 24 --5 10 12 14 16 18 20 22 24 REAL () REAL () Figure 45. P3dB Load Pull Gain Contours (dB) Figure 46. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT27S010NT1 22 RF Device Data Freescale Semiconductor, Inc. 0.28 7.11 0.165 4.91 0.089 2.26 Solder pad with thermal via structure. All dimensions in mm. 0.155 3.94 0.085 2.16 Figure 47. PCB Pad Layout for PLD--1.5W AFS10 N( )B YYWW Figure 48. Product Marking AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 23 PACKAGE DIMENSIONS AFT27S010NT1 24 RF Device Data Freescale Semiconductor, Inc. AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 25 AFT27S010NT1 26 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2013  Initial Release of Data Sheet 1 Sept. 2014  Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect actual reel size, p. 1  Changed operating frequency from 728–2700 MHz to 728–3600 MHz due to expanded device frequency capability resulting from additional test data, p. 1 2 Nov. 2014  Added 3400--3600 MHz performance information as follows: -- Typical Frequency Band table, p. 1 -- Fig. 32, Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg., p. 17 -- Fig. 33, Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power, p. 17 -- Fig. 34, Broadband Frequency Response, p. 17 3 Dec. 2015  Table 1, Maximum Ratings: corrected operating junction temperature range upper limit, p. 2  Table 5, Electrical Characteristics, On Characteristics VDS(on): updated ID unit of measure to mAdc to reflect actual unit of measure, p. 2  Added Ordering Information Table 6, p. 3 AFT27S010NT1 RF Device Data Freescale Semiconductor, Inc. 27 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2013–2015 Freescale Semiconductor, Inc. AFT27S010NT1 Document Number: AFT27S010N Rev. 3, 12/2015 28 RF Device Data Freescale Semiconductor, Inc.