AFV121KHR5

Freescale Semiconductor Technical Data Document Number: AFV121KH Rev. 0, 11/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM. Typical Short Pulse Performance: In 960–1215 MHz reference circuit, VDD = 50 Vdc, AFV121KH AFV121KHS AFV121KGS 960–1215 MHz, 1000 W PEAK, 50 V AIRFAST RF POWER LDMOS TRANSISTORS IDQ = 100 mA, Pin = 25 W Frequency (MHz) 960 1030 Pout (W) Gps (dB) D (%) 1390 Peak 17.5 51.1 Signal Type Pulse (128 sec, 10% Duty Cycle) 1410 Peak 17.5 51.8 1090 1370 Peak 17.4 52.2 1215 1230 Peak 16.9 55.8 Typical Long Pulse Performance: In 960–1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 mA, Pin = 25 W Frequency (MHz) Pout (W) Gps (dB) D (%) 1160 Peak 16.6 50.8 1190 Peak 16.8 52.1 1090 1210 Peak 16.8 49.2 1215 1060 Peak 16.2 50.6 960 1030 Signal Type Pulse (2 msec, 10% Duty Cycle) NI--1230H--4S AFV121KH NI--1230S--4S AFV121KHS NI--1230GS--4L AFV121KGS Load Mismatch/Ruggedness Frequency (MHz) 1030 (1) Signal Type VSWR Pulse (128 sec, 10% Duty Cycle) > 20:1 at all Phase Angles Pin (W) Test Voltage 25 Peak (3 dB Overdrive) 50 Result Gate A 3 1 Drain A Gate B 4 2 Drain B No Device Degradation 1. Measured in 960--1215 MHz reference circuit. Features  Internally Input and Output Matched for Broadband Operation and Ease of Use  Device Can Be Used Single--Ended, Push--Pull, or in a Quadrature Configuration  Qualified up to a Maximum of 50 VDD Operation  High Ruggedness, Handles > 20:1 VSWR  Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing  Characterized with Series Equivalent Large--Signal Impedance Parameters Typical Applications (Top View) Note: The backside of the package is the source terminal for the transistors. Figure 1. Pin Connections  Air Traffic Control Systems (ATC), Including Ground--based Secondary Radars such as Mode S ELM Interrogators  Distance Measuring Equipment (DME)  Mode S Transponders, Including: – Traffic Alert and Collision Avoidance Systems (TCAS) – Automatic Dependent Surveillance--Broadcast In and Out (ADS--B) Using, e.g., 1090 Extended Squitter or Universal Access Transponder (UAT)  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFV121KH AFV121KHS AFV121KGS 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +112 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Storage Temperature Range Tstg – 65 to +150 C TC –40 to 150 C TJ –40 to 225 C Symbol Value (2,3) Unit Case Operating Temperature Range Operating Junction Temperature Range (1,2) Table 2. Thermal Characteristics Characteristic Thermal Impedance, Junction to Case Pulse: Case Temperature 64C, 1000 W Peak, 128 sec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1030 MHz (4) Pulse: Case Temperature 65C, 1000 W Peak, 2 msec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1030 MHz (4) ZJC C/W 0.017 0.050 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 1 Adc V(BR)DSS 112 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 112 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Gate Threshold Voltage (5) (VDS = 10 Vdc, ID = 520 Adc) VGS(th) 1.3 1.8 2.3 Vdc Gate Quiescent Voltage (6) (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.0 2.5 Vdc Drain--Source On--Voltage (5) (VGS = 10 Vdc, ID = 2.6 Adc) VDS(on) 0.05 0.17 0.35 Vdc Crss — 2.5 — pF Characteristic Off Characteristics (5) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) On Characteristics Dynamic Characteristics (5) Reverse Transfer Capacitance (VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) 1. 2. 3. 4. 5. 6. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955 Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Measured in 960--1215 MHz reference circuit. Each side of device measured separately. Measurement made with device in push--pull configuration. (continued) AFV121KH AFV121KHS AFV121KGS 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps 18.5 19.6 22.0 dB Drain Efficiency D 55.5 59.7 — % Input Return Loss IRL — –15 –9 dB Table 5. Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) 1030 Signal Type VSWR Pin (W) Pulse (128 sec, 10% Duty Cycle) > 20:1 at all Phase Angles 20.2 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation Table 6. Ordering Information Device Tape and Reel Information AFV121KHR5 AFV121KHSR5 AFV121KGSR5 Package NI--1230H--4S, Eared R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--1230S--4S, Earless NI--1230GS--4L, Gull Wing 1. Measurement made with device in push--pull configuration. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc NORMALIZED VGS(Q) C, CAPACITANCE (pF) 100 10 Crss 1 0 10 20 30 40 50 1.08 1.07 IDQ(A+B) = 100 mA 1.06 1.05 1.04 500 mA 1.03 1.02 1500 mA 1.01 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 –50 –25 0 25 VDD = 50 Vdc 50 75 100 TC, CASE TEMPERATURE (C) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. IDQ (mA) Figure 2. Capacitance versus Drain--Source Voltage Slope (mV/C) 100 –2.36 500 –2.26 1500 –1.84 Figure 3. Normalized VGS versus Quiescent Current and Case Temperature 109 VDD = 50 Vdc Pulse Width = 128 sec 10% Duty Cycle MTTF (HOURS) 108 ID = 26.74 Amps 107 34.04 Amps 39.03 Amps 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf/calculators Figure 4. MTTF versus Junction Temperature -- Pulse AFV121KH AFV121KHS AFV121KGS 4 RF Device Data Freescale Semiconductor, Inc. 960–1215 MHz REFERENCE CIRCUIT — 3  4 (7.62 cm  10.16 cm) Table 7. 960–1215 MHz Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 25 W Gps (dB) D (%) Pout (W) 17.5 51.1 1390 Peak 17.5 51.8 1410 Peak 1090 17.4 52.2 1370 Peak 1215 16.9 55.8 1230 Peak Frequency (MHz) 960 1030 Signal Type Pulse (128 sec, 10% Duty Cycle) Table 8. Load Mismatch/Ruggedness (In Freescale 960–1215 MHz Reference Circuit, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) 1030 Signal Type VSWR Pin (W) Pulse (128 sec, 10% Duty Cycle) > 20:1 at all Phase Angles 25 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 5 960–1215 MHz REFERENCE CIRCUIT — 3  4 (7.62 cm  10.16 cm) + C16 C23 C22 + + C24 C25 COAX1 C17 C18 AFV121KH Rev. 0 COAX3 C27 C26 R1 C1 C4 C3 C34 C8 C9 C10 C11 L1 C5 Q1 C12 C13 C14 C15 C7 C2 R2 C6 L2 C31 C21 C20 C33 COAX4 C32 COAX2 D68142 + + C30 + C28 C19 C29 Figure 5. AFV121KH(HS) 960–1215 MHz Reference Circuit Component Layout Table 9. AFV121KH(HS) 960–1215 MHz Reference Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C3 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC C4, C6 10 pF Chip Capacitors ATC800B100JT500XT ATC C5 4.7 pF Chip Capacitor ATC800B4R7CT500XT ATC C7 5.1 pF Chip Capacitor ATC800B5R1CT500XT ATC C8, C9 C10, C11, C12, C13, C14, C15 2.2 pF Chip Capacitors ATC800B2R2BT500XT ATC C16, C19 22 F, 25 V Tantalum Capacitors TPSD226M025R0200 AVX C17, C20 0.22 F Chip Capacitors C1210C224K1RACTU Kemet C18, C21, C24, C30 36 pF Chip Capacitors ATC100B360JT500XT ATC C22, C23, C28, C29 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp C25, C26, C31, C32 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK C27, C33 0.022 F Chip Capacitors C1825C223K1GACTU Kemet C34 1.7 pF Chip Capacitor ATC100B1R7BT500XT ATC Coax1, Coax2, Coax3, Coax4 35  Flex Cable 1.9” HSF-141C-35 Hongsen Cable L1, L2 6.6 H, 2 Turn Inductors GA3093-ALC Coilcraft Q1 RF Power LDMOS Transistor AFV121KHR5 Freescale R1,R2 1000 ,1/2 W Chip Resistors CRCW20101K00FKEF Vishay PCB Arlon 450 0.030”, r = 4.5 D68142 MTL AFV121KH AFV121KHS AFV121KGS 6 RF Device Data Freescale Semiconductor, Inc. 60 55 50 45 40 35 –4 --5 --6 --7 --8 --9 --10 --11 1300 D Gps VDD = 50 Vdc, Pin = 25 W, IDQ(A+B) = 100 mA Pulse Width = 128 sec, Duty Cycle = 10% IRL 900 950 1000 1050 1100 1150 1200 1250 D, DRAIN EFFICIENCY (%) 19 18.5 18 17.5 17 16.5 16 15.5 15 14.5 14 13.5 13 12.5 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS — 960–1215 MHz REFERENCE CIRCUIT f, FREQUENCY (MHz) Figure 6. Power Gain, Drain Efficiency and IRL versus Frequency at a Constant Input Power VDD = 50 Vdc, IDQ(A+B) = 100 mA Pulse Width = 128 sec, Duty Cycle = 10% Gps, POWER GAIN (dB) 22 1215 MHz Gps 20 70 1215 MHz 1090 MHz D 1030 MHz 960 MHz 18 1090 MHz 16 50 40 30 1030 MHz 14 60 20 960 MHz D DRAIN EFFICIENCY (%) 24 10 12 10 0 200 400 600 800 1000 1200 0 1400 1600 1800 Pout, OUTPUT POWER (WATTS) PEAK Figure 7. Power Gain and Drain Efficiency versus Output Power 70 Pout 1250 60 D 1000 50 750 40 30 500 250 900 VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 25 W Pulse Width = 128 sec, Duty Cycle = 10% 950 1000 1050 1100 1150 1200 1250 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (WATTS) PEAK 1500 20 1300 f, FREQUENCY (MHz) Figure 8. Output Power and Drain Efficiency versus Frequency at a Constant Input Power AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 7 960–1215 MHz REFERENCE CIRCUIT f = 960 MHz Z0 = 5  Zload f = 1215 MHz Zsource f = 1215 MHz f = 960 MHz f MHz Zsource  Zload  960 2.3 – j4.3 1.7 – j2.3 1030 3.1 – j2.4 1.6 – j1.3 1090 3.9 – j2.0 1.4 – j0.8 1215 4.9 – j0.8 0.8 + j2.5 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + Device Under Test -- -- + Zsource Zload Output Matching Network 50  Figure 9. Series Equivalent Source and Load Impedance — 960–1215 MHz AFV121KH AFV121KHS AFV121KGS 8 RF Device Data Freescale Semiconductor, Inc. 1030 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4  5 (10.16 cm  12.70 cm) Table 10. 1030 MHz Narrowband Performance (1) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 1000 W Peak (100 W Avg.) f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle Characteristic Symbol Min Typ Max Unit Gps 18.5 19.6 22.0 dB Drain Efficiency D 55.5 59.7 — % Input Return Loss IRL — –15 –9 dB Power Gain 1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. Table 11. Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) 1030 Signal Type VSWR Pin (W) Pulse (128 sec, 10% Duty Cycle) > 20:1 at all Phase Angles 20.2 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 9 1030 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4  5 (10.16 cm  12.70 cm) C1 C27 B1 C3 AFV121KH Rev. 3 C5 C7 D67236 C9 COAX2 C12 C11 R2 B2 C4 C8 C6 C21* C22* C23* C17* C18* C24* C25* C26* CUT OUT AREA C10 C2 C19 C13 R1 COAX1 C29 L1 COAX3 L2 COAX4 C15 C16 C14 C20 C28 C30 * C17, C18, C21, C22, C23, C24, C25 and C26 are mounted vertically. Figure 10. AFV121KH(HS) Narrowband Test Circuit Component Layout — 1030 MHz Table 12. AFV121KH(HS) Narrowband Test Circuit Component Designations and Values — 1030 MHz Part Description Part Number Manufacturer B1, B2 Short RF Bead 2743019447 Fair-Rite C1, C2 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C3, C4 2.2 F Chip Capacitors C1825C225J5RACTU Kemet C5, C6 0.1 F Chip Capacitors CDR33BX104AKWS AVX C7, C8 36 pF Chip Capacitors ATC100B360JT500XT ATC C9 2.7 pF Chip Capacitor ATC100B2R7CT500XT ATC C10, C11 30 pF Chip Capacitors ATC100B300JT500XT ATC C12 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C13, C14 36 pF Chip Capacitors ATC100B360JT500XT ATC C15, C16 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC C17 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C18 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC C19, C20 0.01 F Chip Capacitors C1825C103K1GACTU Kemet C21, C22, C23, C24, C25, C26 43 pF Chip Capacitors ATC100B430JT500XT ATC C27, C28, C29, C30 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp Coax1, Coax2, Coax3, Coax4 35  Flex Cable 1.98 HSF-141C-35 Hongsen Cable L1, L2 12 H, 3 Turn Inductors GA3094-ALC Coilcraft R1, R2 1.1 k, 1/4 W Chip Resistors CRCW12061K10FKEA Vishay PCB Arlon, AD255A, 0.03, r = 2.55 D67236 MTL AFV121KH AFV121KHS AFV121KGS 10 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 1030 MHz Gps, POWER GAIN (dB) 21 20 80 62 70 60 60 19 50 Gps 18 17 40 30 D Pout, OUTPUT POWER PEAK VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% D, DRAIN EFFICIENCY (%) 22 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 58 56 54 52 16 20 15 10 48 0 46 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 14 30 1000 100 50 Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 11. Power Gain and Drain Efficiency versus Output Power f (MHz) P1dB (W) P3dB (W) 1030 1002 1115 Figure 12. Output Power versus Input Power 60 IDQ(A+B) = 700 mA 19 50 500 mA 18 40 300 mA 17 30 16 20 100 mA 15 Pout, OUTPUT POWER (WATTS) PEAK 14 100 1000 IDQ(A + B) = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 18 17 50 V 45 V 16 15 14 13 40 V 35 V 12 10 30 21 20 19 11 10 30 0 VDD = 30 V 100 1000 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 13. Power Gain versus Output Power Figure 14. Power Gain versus Output Power 1500 1400 VDD = 50 Vdc, IDQ(A=B) = 100 mA, f = 1030 MHz 1300 Pulse Width = 128 sec, Duty Cycle = 10% 1200 1100 TC = –40_C 25_C 1000 900 800 85_C 700 600 500 400 300 200 100 0 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 Pin, INPUT POWER (dBm) PEAK Figure 15. Output Power versus Input Power 24 80 23 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz 22 Pulse Width = 128 sec, Duty Cycle = 10% TC = –40_C 70 21 20 60 Gps 19 50 18 TC = –40_C 17 85_C 40 16 15 25_C 25_C 14 30 13 D 20 12 85_C 11 10 10 9 0 8 30 100 1000 D, DRAIN EFFICIENCY (%) 20 70 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 21 22 80 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% Gps, POWER GAIN (dB) 22 Pout, OUTPUT POWER (WATTS) PEAK Figure 16. Power Gain and Drain Efficiency versus Output Power AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 11 1030 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Zsource  Zload  1030 2.40 -- j3.73 1.9 + j1.00 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + Device Under Test -- -- + Zsource Zload Output Matching Network 50  Figure 17. Narrowband Series Equivalent Source and Load Impedance — 1030 MHz AFV121KH AFV121KHS AFV121KGS 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 13 AFV121KH AFV121KHS AFV121KGS 14 RF Device Data Freescale Semiconductor, Inc. AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 15 AFV121KH AFV121KHS AFV121KGS 16 RF Device Data Freescale Semiconductor, Inc. AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 17 AFV121KH AFV121KHS AFV121KGS 18 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2015 Description  Initial Release of Data Sheet AFV121KH AFV121KHS AFV121KGS RF Device Data Freescale Semiconductor, Inc. 19 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. AFV121KH AFV121KHS AFV121KGS Document Number: AFV121KH Rev. 0, 11/2015 20 RF Device Data Freescale Semiconductor, Inc.