MRF6VP121KHR6

Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain — 20 dB Drain Efficiency — 56% • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push-Pull Operation • Greater Negative Gate-Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6VP121KHR6 MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 375D-05, STYLE 1 NI-1230 MRF6VP121KHR6 CASE 375E-04, STYLE 1 NI-1230S MRF6VP121KHSR6 PARTS ARE PUSH-PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value -0.5, +110 -6.0, +10 -65 to +150 150 200 Unit Vdc Vdc °C °C °C © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF6VP121KHR6 MRF6VP121KHSR6 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 67°C, 1000 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 150 mA Case Temperature 62°C, Mode-S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, IDQ = 150 mA Symbol ZθJC 0.02 0.07 Value (1,2) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1B (Minimum) B (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics (3) Symbol Min Typ Max Unit Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 165 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 1000 μAdc) Gate Quiescent Voltage (4) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain-Source On-Voltage (3) (VGS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) IGSS V(BR)DSS IDSS IDSS — 110 — — — — — — 10 — 10 100 μAdc Vdc μAdc μAdc VGS(th) VGS(Q) VDS(on) 0.9 1.5 — 1.6 2.2 0.15 2.4 3 — Vdc Vdc Vdc Crss Coss Ciss — — — 1.27 86.7 539 — — — pF pF pF Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps ηD IRL 19 54 — 20 56 -23 22 — -9 dB % dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push-pull configuration. (continued) MRF6VP121KHR6 MRF6VP121KHSR6 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Pulsed RF Performance — 785 MHz (In Freescale 785 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 785 MHz, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps ηD IRL — — — 18.9 57.8 -16.6 — — — dB % dB Pulsed RF Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Mode-S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle Power Gain Drain Efficiency Burst Droop Gps ηD BDrp — — — 19.8 59.0 0.21 — — — dB % dB Pulsed RF Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps ηD IRL — — — 21.4 56.3 -25.3 — — — dB % dB MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 3 VBIAS + C1 C2 C3 C4 L1 BALUN 1 R1 Z11 Z3 Z5 Z7 Z9 C13 Z13 Z15 Z17 Z19 Z21 C17 C18 C21 C22 + C23 + C24 VSUPPLY RF INPUT Z1 RF Z2 C10 Z4 C11 R2 C14 VBIAS + C5 C6 C7 C8 + C25 0.140″ x 0.083″ 0.300″ x 0.083″ 0.746″ x 0.220″ 0.075″ x 0.631″ 0.329″ x 0.631″ 0.326″ x 0.631″ 0.240″ x 0.631″ C26 C27 + C28 VSUPPLY L2 Z6 Z8 C12 Z10 DUT C15 C16 Z23 OUTPUT C9 Z12 Z14 Z16 Z18 Z20 Z22 C19 C20 BALUN 2 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19, Z20 Z21, Z22 Z23 PCB 0.143″ x 0.631″ 0.135″ x 0.631″ 0.102″ x 0.632″ 0.130″ x 0.631″ 0.736″ x 0.215″ 0.410″ x 0.083″ Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55 Figure 2. MRF6VP121KHR6(HSR6) Test Circuit Schematic Table 5. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values Part Balun 1, 2 C1, C5 C2, C6 C3, C7 C4, C8, C10, C11, C17, C18, C19, C20, C21, C25 C9 C12, C16 C13, C14, C15 C22, C26 C23, C24, C27, C28 L1, L2 R1, R2 Balun Anaren 22 μF, 25 V Tantalum Capacitors 2.2 μF, 50 V Chip Capacitors 0.22 μF, 100 V Chip Capacitors 36 pF Chip Capacitors 1.0 pF Chip Capacitor 0.8-8.0 pF Variable Capacitors 5.1 pF Chip Capacitors 0.022 μF, 100 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors Inductors 3 Turn 1000 Ω, 1/4 W Chip Resistors Description 3A412 TPSD226M025R C1825C225J5RAC C1210C224K1RAC ATC100B360JT500XT ATC100B1R0CT500XT 27291SL ATC100B5R1CT500XT C1825C223K1GAC MCGPR63V477M13X26-RH GA3094-AL CRCW12061001FKEA Manufacturer Part Number Anaren AVX Kemet Kemet ATC ATC Johanson ATC Kemet Multicomp Coilcraft Vishay MRF6VP121KHR6 MRF6VP121KHSR6 4 RF Device Data Freescale Semiconductor C24 C1 C3 C2 C4 BALUN 1 MRF6VP121KH Rev. 2 C22 C21 C23 BALUN 2 R1 C12 C13 L1 C10 C11 C15 CUT OUT AREA C16 C17 C18 C19 C20 C9 R2 C8 C6 C7 C14 L2 C25 C26 C5 C27 Figure 3. MRF6VP121KHR6(HSR6) Test Circuit Component Layout C28 MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 1000 Ciss Gps, POWER GAIN (dB) C, CAPACITANCE (pF) Coss 100 22 21 20 19 18 17 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 16 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PULSED VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 60 50 40 30 20 10 0 10000 ηD, DRAIN EFFICIENCY (%) 45 Gps 10 Crss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ηD Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage 22 Ideal 21.5 Gps, POWER GAIN (dB) Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power 25 24 23 IDQ = 6000 mA Gps, POWER GAIN (dB) 21 P1dB = 1065 W (60.3 dBm) 20.5 20 19.5 19 18.5 18 500 P3dB = 1182 W (60.7 dBm) VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 600 700 800 900 1000 1100 22 21 20 19 18 17 16 1 3000 mA 1500 mA 750 mA 375 mA 150 mA 10 VDD = 50 Vdc f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 100 1000 10000 Actual 1200 1300 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 6. Pulsed Power Gain versus Output Power 23 22 Gps, POWER GAIN (dB) 21 20 19 18 VDD = 30 V 17 16 0 200 400 600 800 1000 1200 1400 Pout, OUTPUT POWER (WATTS) PULSED 40 20 35 V 40 V 45 V 50 V IDQ = 150 mA, f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 65 Figure 7. Pulsed Power Gain versus Output Power Pout, OUTPUT POWER (dBm) 60 55 TC = -30_C 25_C 85_C 50 45 VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 30 35 40 25 Pin, INPUT POWER (dBm) PULSED Figure 8. Pulsed Power Gain versus Output Power Figure 9. Pulsed Output Power versus Input Power MRF6VP121KHR6 MRF6VP121KHSR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PULSED TC = -30_C 25_C 85_C ηD VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 70 60 50 40 30 20 10 0 10000 ηD, DRAIN EFFICIENCY (%) 170 190 Gps Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 109 108 MTTF (HOURS) 107 MTTF (HOURS) 90 110 130 150 170 190 210 230 250 109 108 107 106 105 106 105 104 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 128 μsec, Duty Cycle = 10%, and ηD = 56%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 104 90 110 130 150 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Mode-S Pulse Train, Pulse Width = 32 μsec, Duty Cycle = 6.4%, and ηD = 59%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature 128 msec, 10% Duty Cycle Figure 12. MTTF versus Junction Temperature Mode-S MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 7 Zo = 5 Ω f = 1030 MHz Zload f = 1030 MHz Zsource VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 1030 Zsource W 3.93 + j0.09 Zload W 1.54 + j1.42 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 13. Series Equivalent Source and Load Impedance MRF6VP121KHR6 MRF6VP121KHSR6 8 RF Device Data Freescale Semiconductor C26 C1 C3 C2 C4 BALUN 1 C9 C10 C11 C12 C13 C14 MRF6VP121KH Rev. 2 C24 C23 L1 R1 C25 BALUN 2 C17 C18 C19 C20 C21 C22 CUT OUT AREA C15 C16 L2 R2 C8 C6 C7 C29 C5 Figure 14. MRF6VP121KHR6(HSR6) Test Circuit Component Layout — 785 MHz Table 6. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values — 785 MHz Part Balun 1, 2 C1, C5 C2, C6 C3, C7 C4, C8, C10, C11, C19, C20, C21, C22, C23, C27 C9 C12 C13 C14 C15, C16, C17, C18 C24, C28 C25, C26, C29, C30 L1, L2 R1, R2 PCB Balun Anaren 22 μF, 25 V Tantalum Capacitors 2.2 μF, 50 V Chip Capacitors 0.22 μF, 100 V Chip Capacitors 36 pF Chip Capacitors 8.2 pF Chip Capacitor 0.6-4.5 pF Variable Capacitor 3.6 pF Chip Capacitor 10 pF Chip Capacitor 5.1 pF Chip Capacitors 0.022 μF, 100 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors Inductors 3 Turn 1000 Ω, 1/4 W Chip Resistors CuClad, 0.030″, εr = 2.55 Description 3A412 TPSD226M025R0200 C1825C225J5RAC-TU C1210C224K1RAC-TU ATC100B360JT500XT ATC100B8R2CT500XT 27271SL ATC100B3R6CT500XT ATC100B100JT500XT ATC100B5R1CT500XT C1825C223K1GAC MCGPR63V477M13X26-RH GA3094-ALC CRCW12061K00FKEA 250GX-0300-55-22 Manufacturer Part Number Anaren AVX Kemet Kemet ATC ATC Johanson ATC ATC ATC Kemet Multicomp Coilcraft Vishay Arlon MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 9 C30 C27 C28 TYPICAL CHARACTERISTICS — 785 MHZ 20.5 VDD = 50 Vdc 20 I = 150 mA DQ 19.5 f = 785 MHz Pulse Width = 128 μsec 19 Duty Cycle = 10% 18.5 18 17.5 17 16.5 16 15.5 10 100 1000 60 55 ηD, DRAIN EFFICIENCY (%) 50 45 Gps ηD 40 35 30 25 20 15 10 3000 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) PULSED Figure 15. Pulsed Power Gain and Drain Efficiency versus Output Power MRF6VP121KHR6 MRF6VP121KHSR6 10 RF Device Data Freescale Semiconductor Zo = 5 Ω Zload f = 785 MHz f = 785 MHz Zsource VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 785 Zsource W 1.54 - j0.46 Zload W 2.79 + j1.10 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 16. Series Equivalent Source and Load Impedance — 785 MHz MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 11 C1 C3 C2 C4 BALUN 1 MRF6VP121KH Rev. 2 C22 C21 C23 BALUN 2 R1 C12 C29 CUT OUT AREA C13 C16 C15 L1 C17 C18 C19 C20 C10 C11 C9 R2 C8 C6 C7 C14 L2 C5 C27 C28 Figure 17. MRF6VP121KHR6(HSR6) Test Circuit Component Layout — 1090 MHz Table 7. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values — 1090 MHz Part Balun 1, 2 C1, C5 C2, C6 C3, C7 C4, C8, C17, C18, C19, C20, C21, C25 C9 C12, C16 C10, C11, C13, C14, C15, C29 C22, C26 C23, C24, C27, C28 L1, L2 R1, R2 PCB Balun Anaren 22 μF, 25 V Tantalum Capacitors 2.2 μF, 50 V 1825 Chip Capacitors 0.22 μF, 100 V Chip Capacitors 36 pF Chip Capacitors 1.0 pF Chip Capacitor 0.8-8.0 pF Variable Capacitors 5.1 pF Chip Capacitors 0.022 μF, 100 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors Inductors 3 Turn 1000 Ω, 1/4 W Chip Resistors CuClad, 0.030″, εr = 2.55 Description 3A412 TPSD226M025R0200 C1825C225J5RAC-TU C1210C224K1RAC-TU ATC100B360JT500XT ATC100B1R0BT500XT 27291SL ATC100B5R1CT500XT C1825C223K1GAC MCGPR63V477M13X26-RH GA3094-ALC CRCW12061K00FKEA 250GX-0300-55-22 Manufacturer Part Number Anaren AVX Kemet Kemet ATC ATC Johanson ATC Kemet Multicomp Coilcraft Vishay Arlon MRF6VP121KHR6 MRF6VP121KHSR6 12 RF Device Data Freescale Semiconductor - C25 C26 - C24 TYPICAL CHARACTERISTICS — 1090 MHZ 22 VDD = 50 Vdc I = 150 mA 21 DQ f = 1090 MHz Pulse Width = 128 μsec 20 Duty Cycle = 10% Gps 19 ηD 18 17 16 10 20 10 0 3000 30 60 50 40 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 100 1000 Pout, OUTPUT POWER (WATTS) PULSED Figure 18. Pulsed Power Gain and Drain Efficiency versus Output Power MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 13 Zo = 5 Ω f = 1090 MHz f = 1090 MHz Zload Zsource VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 1090 Zsource W 2.98 + j3.68 Zload W 1.51 + j2.02 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 19. Series Equivalent Source and Load Impedance — 1090 MHz MRF6VP121KHR6 MRF6VP121KHSR6 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 15 MRF6VP121KHR6 MRF6VP121KHSR6 16 RF Device Data Freescale Semiconductor MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 17 MRF6VP121KHR6 MRF6VP121KHSR6 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date June 2009 June 2009 • Initial Release of Data Sheet • Added Pulsed RF Performance tables for 785 MHz and 1090 MHz applications, p. 3 • Added Figs. 13 and 16, Test Circuit Component Layout - 785 MHz and 1090 MHz, and Tables 6 and 7, Test Circuit Component Designations and Values - 785 MHz and 1090 MHz, p. 9, 12 • Added Figs. 14 and 17, Pulsed Power Gain and Drain Efficiency versus Output Power - 785 MHz and 1090 MHz, p. 10, 13 • Added Figs. 15 and 18, Series Equivalent Source and Load Impedance - 785 MHz and 1090 MHz, p. 11, 14 2 Dec. 2009 • Added thermal data for 1030 MHz Mode-S application to Table 2, Thermal Characteristics, reporting of pulsed thermal data now shown using the ZθJC symbol, p. 2 • Added Typical Performances table for 1030 MHz Mode-S application, p. 3 • Added Fig. 12, MTTF versus Junction Temperature - 1030 MHz Mode-S, p. 7 Description MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRF6VP121KHR6 MRF6VP121KHSR6 Document Number: MRF6VP121KH 2Rev. 2, 12/2009 0 RF Device Data Freescale Semiconductor