MRF6VP21KHR6

Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 4, 4/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. • Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 24 dB Drain Efficiency — 67.5% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push--Pull Operation • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 10--235 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET CASE 375D--05, STYLE 1 NI--1230 PART IS PUSH--PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit ZθJC 0.03 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6VP21KHR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 20 μAdc V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 100 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 5 mA Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 1600 μAdc) VGS(th) 1 1.68 3 Vdc Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.2 3.5 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 4 Adc) VDS(on) — 0.28 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.3 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 147 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 506 — pF Characteristic Off Characteristics (1) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics (1) Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 225 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps 22 24 26 dB Drain Efficiency ηD 65 67.5 — % Input Return Loss IRL — --15 --9 dB 1. Each side of device measured separately. 2. Measurement made with device in push--pull configuration. MRF6VP21KHR6 2 RF Device Data Freescale Semiconductor VBIAS B1 + + + C1 C2 C3 L1 R2 R1 C4 C5 C6 C7 C8 Z4 C9 Z6 Z3 Z2 Z1 + L4 C10 C11 C13 Z10 Z12 RF INPUT VSUPPLY Z5 C12 Z7 C16 C17 C18 C19 C15 + C20 Z16 Z8 L3 J1 L2 C21 Z14 C14 + Z18 DUT C23 C24 Z19 J2 Z9 Z11 Z13 Z15 C25 Z17 T1 RF OUTPUT T2 C22 Z1 Z2* Z3* Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 0.100″ x 0.082″ Microstrip 1.557″ x 0.082″ Microstrip 0.055″ x 0.082″ Microstrip 0.133″ x 0.193″ Microstrip 0.143″ x 0.518″ Microstrip 0.357″ x 0.518″ Microstrip 0.200″ x 0.518″ Microstrip Z12, Z13 Z14, Z15 Z16*, Z17* Z18 Z19 PCB 0.599″ x 0.253″ Microstrip 0.110″ x 0.253″ Microstrip 0.055″ x 0.253″ Microstrip 0.069″ x 0.082″ Microstrip 1.050″ x 0.082″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 *Line length includes microstrip bends. Figure 2. MRF6VP21KHR6 Test Circuit Schematic Table 5. MRF6VP21KHR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 95 Ω, 100 MHz Long Ferrite Bead 2743021447 Fair--Rite C1 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap C2 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C3 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C4, C9, C17 10K pF Chip Capacitors ATC200B103KT50XT ATC C5, C16 20K pF Chip Capacitors ATC200B203KT50XT ATC C6, C15 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C7 2.2 μF, 50 V Chip Capacitor C1825C225J5RAC Kemet C8 0.22 μF, 100 V Chip Capacitor C1825C223K1GAC Kemet C10, C11, C13, C14 1000 pF Chip Capacitors ATC100B102JT50XT ATC C12, C21, C22 27 pF Chip Capacitors ATC100B270JT500XT ATC C18, C19, C20 470 μF, 63 V Electrolytic Capacitors EKME630ELL471MK25S Multicomp C23, C24 68 pF Chip Capacitors ATC100B680JT500XT ATC C25 4.7 pF Chip Capacitor ATC100B4R7JT500XT ATC J1, J2 Jumpers from PCB to T1 and T2 Copper Foil L1 82 nH Inductor 1812SMS--82NJC CoilCraft L2 8 nH Inductor A03TKLC CoilCraft L3 1 Turn Inductor, Red Coil GA3092--AL CoilCraft L4* 10 Turn, #18 AWG Inductor, Hand Wound Copper Wire R1 1 KΩ, 1/4 W Axial Leaded Resistor CMF601000R0FKEK Vishay R2 20 Ω, 3 W Chip Resistor CPF320R000FKE14 Vishay T1 Balun TUI--9 Comm Concepts T2 Balun TUO--4 Comm Concepts *L4 is wrapped around R2. MRF6VP21KHR6 RF Device Data Freescale Semiconductor 3 C1 C19 C2 C3 C17 C16 C15 C4 C5 C6 B1 L1 C20 C14 C7 C8 C9 C18 R1 C21 C10 C11 L4, R2* C13 T2 T1 C23 J1 L3 L2 C12 CUT OUT AREA C24 C22 J2 C25 MRF6VP21KH Rev. 1 * L4 is wrapped around R2. Figure 3. MRF6VP21KHR6 Test Circuit Component Layout MRF6VP21KHR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 Ciss ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 1000 Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 TJ = 200°C 10 TC = 25°C 1 1 0 10 20 30 40 1 50 100 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Note: Each side of device measured separately. Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area 26 80 VDD = 50 Vdc, IDQ = 150 mA, f = 225 MHz 25 Pulse Width = 100 μsec, Duty Cycle = 20% 60 Gps 50 23 22 40 21 30 ηD 20 19 10 100 20 1000 63 P1dB = 60.37 dBm (1088.93 W) 62 61 Actual 60 59 58 57 VDD = 50 Vdc, IDQ = 150 mA, f = 225 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 56 10 2000 Ideal P3dB = 61.33 dBm (1358.31 W) 64 70 Pout, OUTPUT POWER (dBm) 24 65 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) TJ = 175°C TJ = 150°C 55 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 7. Pulsed Output Power versus Input Power 28 40 39 Pout, OUTPUT POWER (WATTS) PULSED 28 IDQ = 6000 mA 3600 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 26 1500 mA 24 750 mA 22 375 mA 20 150 mA 18 24 20 VDD = 30 V 40 V 35 V 16 100 1000 2000 12 50 V IDQ = 150 mA, f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% VDD = 50 Vdc, f = 225 MHz Pulse Width = 100 μsec, Duty Cycle = 20% 10 45 V 0 200 400 600 800 1000 1200 1400 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain versus Output Power Figure 9. Pulsed Power Gain versus Output Power 1600 MRF6VP21KHR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 26 60 85_C 25_C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) TC = --30_C 55 50 VDD = 50 Vdc IDQ = 150 mA f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% 45 40 20 25 35 30 40 90 VDD = 50 Vdc 25 IDQ = 150 mA f = 225 MHz 24 Pulse Width = 100 μsec Duty Cycle = 20% 23 TC = --30_C 80 70 85_C 60 25_C 50 22 40 21 Gps 20 ηD 30 19 20 18 10 45 ηD, DRAIN EFFICIENCY (%) 65 1000 100 10 2000 Pin, INPUT POWER (dBm) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 10. Pulsed Output Power versus Input Power Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power 109 0.2 0.16 D = 0.7 0.14 0.12 MTTF (HOURS) ZJC, THERMAL IMPEDANCE (°C/W) 0.18 D = 0.5 0.1 PD 0.08 0.04 D = Duty Factor = t1/t2 t1 = Pulse Width t2 = Pulse Period TJ = PD * ZJC + TC D = 0.1 0.02 0 0.00001 t1 t2 0.06 0.0001 0.001 0.01 0.1 1 108 107 106 10 RECTANGULAR PULSE WIDTH (S) Figure 12. Maximum Transient Thermal Impedance 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec, Duty Cycle = 20%, and ηD = 67.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRF6VP21KHR6 6 RF Device Data Freescale Semiconductor f = 225 MHz Zsource Zo = 5 Ω f = 225 MHz Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Ω Zload Ω 225 1.16 + j4.06 2.86 + j1.10 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 14. Series Equivalent Source and Load Impedance MRF6VP21KHR6 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6VP21KHR6 8 RF Device Data Freescale Semiconductor MRF6VP21KHR6 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 • Initial Release of Data Sheet 1 Apr. 2008 • Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS compliant part number in Table 5, Test Circuit Component Designations and Values, and updated the footnote to read “L4” versus “L3”, p. 3. • Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is measured separately, p. 5 • Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5 • Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 3 Dec. 2008 • Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to show push--pull test conditions, p. 7 4 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Reporting of pulsed thermal data now shown using the ZθJC symbol, p. 1 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 10 MRF6VP21KHR6 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MRF6VP21KHR6 Document RF DeviceNumber: Data MRF6VP21KH Rev. 4, 4/2010 Freescale Semiconductor 11