BFQ591

BFQ591 NPN 7 GHz wideband transistor Rev. 04 — 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. DESCRIPTION NPN wideband transistor in a SOT89 plastic package. MARKING TYPE NUMBER BFQ591 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM |s21|2 Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts ≤ 90 °C; note 1 IC = 70 mA; VCE = 8 V IC = 0; VCB = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C CONDITIONS open emitter open base MIN. − − − − 60 − − − − TYP. − − − − 90 0.8 7 11 10 MARKING CODE BCp 3 2 1 BFQ591 PINNING PIN 1 2 3 emitter collector base DESCRIPTION Fig.1 Simplified outline (SOT89). MAX. 20 15 200 2.25 250 − − − − UNIT V V mA W pF GHz dB dB Rev. 04 - 2 October 2007 2 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 90 °C; note 1 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 90 °C; note 1 CONDITIONS open emitter open base open collector − − − − − −65 − MIN. BFQ591 MAX. 20 15 3 200 2.25 +150 175 V V V UNIT mA W °C °C VALUE 38 UNIT K/W Rev. 04 - 2 October 2007 3 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC = 0.1 mA; IB = 0 IE = 0.1 mA; IC = 0 IE = 0; VCB = 10 IC = 70 mA ; VCE = 8 V IC = 0; VCB = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; Tamb = 25 °C f = 900 MHz f = 2 GHz |s21|2 Vo Notes inser tion power gain output voltage IC = 70 mA; VCE = 12 V; f = 1 GHz; Tamb = 25 °C note 2 − − − − 11 5.5 10 700 MIN. − − − − 60 − − TYP. − − − − 90 0.8 7 BFQ591 MAX. 20 15 3 100 250 − − UNIT V V V nA pF GHz collector-base breakdown voltage IC = 0.1 mA; IE = 0 − − − − dB dB dB mV s 21 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------- dB . 2 2 ( 1 – s 11 ) ( 1 – s 22 ) 2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q+r) = 793.25 MHz. 2 Rev. 04 - 2 October 2007 4 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage 3 MLD796 handbook, halfpage 250 MRA749 Ptot (W) 2 hFE 200 150 100 1 50 0 0 50 100 150 Ts (°C) 200 0 10−2 10−1 1 10 IC (mA) 102 VCE = 12 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current; typical values. handbook, halfpage 1.2 MLD797 handbook, halfpage 8 MLD798 Cre (pF) fT (GHz) 6 0.8 4 0.4 2 0 0 4 8 12 VCB (V) 16 0 1 10 IC (mA) 102 IC = 0; f = 1 MHz. VCE = 12 V; f = 1 GHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current. Rev. 04 - 2 October 2007 5 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage 25 MLD799 handbook, halfpage gain (dB) 20 10 gain MLD800 (dB) 8 MSG 15 Gmax GUM 6 GUM 10 4 5 2 0 0 40 80 IC (mA) 120 0 0 40 80 IC (mA) 120 VCE = 12 V; f = 900 MHz. VCE = 12 V; f = 2 GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 40 MLD801 gain (dB) 30 MSG 20 GUM Gmax 10 MSG 0 10 102 103 f (MHz) 104 IC = 70 mA; VCE = 12 V. Fig.8 Gain as a function of frequency; typical values. Rev. 04 - 2 October 2007 6 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage −30 MLD802 handbook, halfpage dim (dB) −40 −30 d2 MLD803 (dB) −40 −50 −50 −60 −60 −70 −70 −80 0 40 80 IC (mA) 120 0 40 80 IC (mA) 120 Vo = 700 mV; VCE = 12 V; Tamb = 25 °C; f(p+q+r) = 793.25 MHz. Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz. Fig.9 Intermodulation distortion as function of collector current; typical values. Fig.10 Second order intermodulation distortion as function of collector current; typical values. Rev. 04 - 2 October 2007 7 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor SPICE parameters for the BFQ591 die. SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJ TR CJS VJS MJS FC VALUE 1.341 123.5 .988 75.85 9.656 232.2 2.134 10.22 1.016 1.992 294.1 211.0 997.2 5.00 1.000 5.00 1.275 920.6 0.000 1.110 3.000 3.821 600.0 348.5 13.60 71.73 10.28 1.929 0.000 1.409 219.4 166.5 2.340 543.7 0.000 750.0 0.000 733.2 UNIT fA − − V mA fA − − − V mA aA − Ω µA Ω Ω Ω − eV − pF mV − ps − V mA deg fF mV − − ps F mV − − BFQ591 handbook, halfpage C cb L1 B LB B' E' LE C' L2 C C be Cce MBC964 L3 E QLB = 50;QLE = 50;QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 1 GHz. Fig.11 Package equivalent circuit SOT89. List of components (see Fig.11) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 16 150 150 1 0.01 1 1.2 1.2 VALUE fF fF fF nH nH nH nH nH UNIT Rev. 04 - 2 October 2007 8 of 11 NXP Semiconductors Product specification NPN 7 GHz wideband transistor PACKAGE OUTLINE BFQ591 Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 bp2 wM B bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 Rev. 04 - 2 October 2007 9 of 11 NXP Semiconductors BFQ591 NPN 7 GHz wideband transistor Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 2 October 2007 10 of 11 NXP Semiconductors BFQ591 NPN 7 GHz wideband transistor Revision history Revision history Document ID BFQ591_N_4 Modifications: BFQ591_3 BFQ591_N_2 (9397 750 09252) BFQ591_N_1 (9397 750 09013) Release date 20071002 Data sheet status Product data sheet Product specification Preliminary specification Preliminary specification Change notice Supersedes BFQ591_3 BFQ591_N_2 BFQ591_N_1 - • Fig. 1 and package outline updated 20020204 20020102 20011203 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 October 2007 Document identifier: BFQ591_N_4