BFU730LXZ

62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Leadless ultra small plastic SMD package 1.0 mm  0.6 mm  0.34 mm Low noise high gain microwave transistor Noise figure (NF) = 0.75 dB at 6 GHz High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:  input third-order intercept point (IP3i) = 15 dBm  input power at 1 dB gain compression (Pi(1dB)) = 0 dBm See application note AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX.  110 GHz fT silicon germanium technology      1.3 Applications  Wi-Fi / WLAN See application notes:  AN11223: Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX  AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX  WiMAX  LNA for GPS, GLONASS, Galileo and Compass (BeiDou)  DBS (2nd LNA stage, mixer stage, DRO), SDARS  RKE, AMR / Zigbee  LNA for microwave communications systems  Low current battery equipped applications  Microwave driver / buffer applications BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCB collector-base voltage open emitter - - 10.0 V VCE collector-emitter voltage open base - - 3.0 V shorted base - - 10.0 V open collector - - 1.3 V - 5 30 mA mW VEB emitter-base voltage IC collector current Ptot total power dissipation Tsp  110 C - - 160 hFE DC current gain IC = 2 mA; VCE = 2 V; Tj = 25 C 205 380 555 fT transition frequency IC = 25 mA; VCE = 3 V; f = 2 GHz; Tamb = 25 C - 53 - GHz Gp(max) maximum power gain IC = 25 mA; VCE = 3 V; f = 6 GHz; Tamb = 25 C - 15.8 - dB NF noise figure IC = 5 mA; VCE = 3 V; f = 6 GHz; S = opt - 0.75 - dB PL(1dB) output power at 1 dB gain compression IC = 25 mA; VCE = 3 V; ZS = ZL = 50 ; f = 1.8 GHz; Tamb = 25 C - 11.7 - dBm [1] [2] [1] Tsp is the temperature at the solder point of the emitter lead. [2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG). 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline 1 base 2 collector  3 emitter  Graphic symbol    7UDQVSDUHQW WRSYLHZ  DDD 3. Ordering information Table 3. Ordering information Type number BFU730LX BFU730LX Product data sheet Package Name Description Version - leadless ultra small plastic package; 3 terminals; body 1  0.6  0.34 mm SOT883C All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 2 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 4. Marking Table 4. Marking Type number Marking BFU730LX ZD 5. Design support Table 5. Available design support Download from the BFU730LX product page on http://www.nxp.com. Support item Available Device models for Agilent EEsof EDA ADS yes Remarks Device models for Agilent EEsof EDA Genesys yes Based on Mextram device model Device models for AWR Microwave Office planned Based on Mextram device model [1] Based on Mextram device model Device models for ANSYS Ansoft designer planned Based on Mextram device model SPICE model planned Based on Gummel-Poon device model S-parameters yes Noise parameters yes Customer evaluation kit yes Gerber files evaluation board yes Reflow soldering footprint yes AN11223: Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX yes Application note AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX yes Application note [1] See http://www.nxp.com/models.html. 6. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCB collector-base voltage open emitter - 10.0 V VCE collector-emitter voltage open base - 3.0 V shorted base - 10.0 V - 1.3 V VEB Product data sheet open collector Tsp  110 C [1] Ptot total power dissipation - 160 mW Tstg storage temperature 65 +150 C Tj junction temperature - 150 C [1] BFU730LX emitter-base voltage Tsp is the temperature at the solder point of the emitter lead. All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 3 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 7. Recommended operating conditions Table 7. Recommended operating conditions Symbol Parameter Tj IC Conditions Min Typ Max Unit junction temperature 40 - +125 C collector current - - 30 mA 8. Thermal characteristics Table 8. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 250 K/W DDD  3WRW P:      Fig 1.     7VSƒ&  Total supply current as a function of solder point temperature 9. Characteristics Table 9. Characteristics Tj = 25 C unless otherwise specified; measurements done on characterization boards. Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 A; IE = 0 mA 10 - - V 3.0 - - V - 5 30 mA - 100 nA V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA IC collector current ICBO collector-base cut-off current IE = 0 mA; VCB = 4.5 V - hFE DC current gain IC = 2 mA; VCE = 2 V 205 380 CCE collector-emitter capacitance VCE = 2 V; f = 1 MHz - 145 - fF CEB emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 310 - fF CCB collector-base capacitance VCB = 2 V; f = 1 MHz - 84 - fF fT transition frequency IC = 25 mA; VCE = 3 V; f = 2 GHz; Tamb = 25 C - 53 - GHz BFU730LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 555 © NXP B.V. 2013. All rights reserved. 4 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor Table 9. Characteristics …continued Tj = 25 C unless otherwise specified; measurements done on characterization boards. Symbol Parameter Conditions Gp(max) IC = 5 mA; VCE = 3 V; Tamb = 25 C maximum power gain Min Typ Max Unit [1] f = 1.8 GHz - 22.0 - dB - 15.0 - dB - 23.6 - dB - 15.7 - dB f = 1.8 GHz - 24.5 - dB f = 6 GHz - 15.8 - dB f = 1.8 GHz - 19.3 - dB f = 6 GHz - 11.1 - dB f = 1.8 GHz - 21.3 - dB f = 6 GHz - 12.0 - dB f = 1.8 GHz - 22.3 - dB f = 6 GHz - 12.5 - dB f = 1.8 GHz - 0.55 - dB f = 6 GHz - 0.75 - dB f = 1.8 GHz - 0.7 - dB f = 6 GHz - 0.9 - dB f = 1.8 GHz - 1.1 - dB f = 6 GHz - 1.2 - dB f = 1.8 GHz - 3.7 - dBm f = 6 GHz - 1.6 - dBm f = 1.8 GHz - 3.5 - dBm f = 6 GHz - 5.4 - dBm f = 1.8 GHz - 11.7 - dBm f = 6 GHz - 12.7 - dBm f = 6 GHz IC = 10 mA; VCE = 3 V; Tamb = 25 C [1] f = 1.8 GHz f = 6 GHz IC = 25 mA; VCE = 3 V; Tamb = 25 C s212 insertion power gain [1] IC = 5 mA; VCE = 3 V; Tamb = 25 C IC = 10 mA; VCE = 3 V; Tamb = 25 C IC = 25 mA; VCE = 3 V; Tamb = 25 C NFmin minimum noise figure IC = 5 mA; VCE = 3 V; S = opt; Tamb = 25 C IC = 10 mA; VCE = 3 V; S = opt; Tamb = 25 C IC = 25 mA; VCE = 3 V; S = opt; Tamb = 25 C PL(1dB) output power at 1 dB gain compression IC = 5 mA; VCE = 3 V; ZS = ZL = 50 ; Tamb = 25 C IC = 10 mA; VCE = 3 V; ZS = ZL = 50 ; Tamb = 25 C IC = 25 mA; VCE = 3 V; ZS = ZL = 50 ; Tamb = 25 C BFU730LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 5 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor Table 9. Characteristics …continued Tj = 25 C unless otherwise specified; measurements done on characterization boards. Symbol Parameter Conditions IP3o IC = 5 mA; VCE = 3 V; ZS = ZL = 50 ; Tamb = 25 C output third-order intercept point Min Typ Max Unit f = 1.8 GHz - 14.7 - dBm f = 6 GHz - 19.0 - dBm f = 1.8 GHz - 23.8 - dBm f = 6 GHz - 25.3 - dBm f = 1.8 GHz - 25.5 - dBm f = 6 GHz - 26.9 - dBm IC = 10 mA; VCE = 3 V; ZS = ZL = 50 ; Tamb = 25 C IC = 25 mA; VCE = 3 V; ZS = ZL = 50 ; Tamb = 25 C [1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. 001aam854 500 DDD  I7 *+]  hFE 400  300  200  100   0 0 10 20 30   IC (mA) VCE = 2 V; Tamb = 25 C. Fig 2. Product data sheet    ,&P$  VCE = 2.5 V; f = 2 GHz; Tamb = 25 C. DC current gain as a function of collector current; typical values BFU730LX  Fig 3. Transition frequency as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 6 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor DDD  _V_ G% DDD  * G%      06*        *SPD[           ,&P$   VCE = 3 V; Tamb = 25 C. 06* _V_        I*+]  IC = 25 mA; VCE = 3 V; Tamb = 25 C. (1) f = 0.9 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 3.0 GHz (5) f = 4.0 GHz (6) f = 5.0 GHz (7) f = 6.0 GHz Fig 4. Insertion power gain as a function of collector current; typical value BFU730LX Product data sheet Fig 5. Gain as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 7 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor DDD  1)PLQ G% DDD  3/G% G%P                         I*+]   VCE = 3 V; Tamb = 25 C.        ,FP$  VCE = 3 V; Tamb = 25 C. (1) IC = 5 mA (1) f = 1.8 GHz (2) IC = 10 mA (2) f = 6 GHz (3) IC = 15 mA (4) IC = 20 mA (5) IC = 25 mA (6) IC = 30 mA Fig 6. Minimum noise figure as a function of frequency; typical values BFU730LX Product data sheet Fig 7. Output power at 1 dB gain compression as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 8 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 10. Package outline /HDGOHVVXOWUDVPDOOSODVWLFSDFNDJHVROGHUODQGVERG\[[PP /[ 627& / E[   H E  H $ $ $ ( '   PP VFDOH 'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP $ $ $ ( ' H H PD[      QRP         PLQ  E    E / /          1RWHV ,QFOXGLQJSODWLQJWKLFNQHVV VRWFBSR 2XWOLQH YHUVLRQ 5HIHUHQFHV ,(& 627& Fig 8. -('(& -(,7$ (XURSHDQ SURMHFWLRQ ,VVXHGDWH   02 Package outline SOT883C BFU730LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 9 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 11. Abbreviations Table 10. Abbreviations Acronym Description AMR Automatic Meter Reading DBS Direct Broadcast Satellite DRO Dielectric Resonator Oscillator GLONASS GLObal NAvigation Satellite System GPS Global Positioning System LNA Low Noise Amplifier LNB Low Noise Block NPN Negative-Positive-Negative RKE Remote Keyless Entry SDARS Satellite Digital Audio Radio Service SMD Surface-Mounted Device WiMAX Worldwide Interoperability for Microwave Access WLAN Wireless Local Area Network 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BFU730LX v.1 20130508 Product data sheet - - BFU730LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 10 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BFU730LX Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 11 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BFU730LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2013 © NXP B.V. 2013. All rights reserved. 12 of 13 BFU730LX NXP Semiconductors NPN wideband silicon germanium RF transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Design support . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 May 2013 Document identifier: BFU730LX