BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
Rev. 2 — 11 April 2013
Product data sheet
1. Product profile
1.1 General description
The BGU7003W MMIC is a wideband amplifier in SiGe:C technology for high speed,
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT886
package.
Table 1.
Application information
Tamb = 25 C; VCC = 2.85 V; ICC(tot) = 3.2 mA [1]; VENABLE 0.7 V; f = 100 MHz; ZS = ZL = 50 unless
otherwise specified. All measurements are done with the SMA-connectors as reference plane.
Application
high-ohmic FM LNA
NF
s212
RLin
RLout
Pi(1dB)
PL(1dB)
IP3I
IP3O
(dB)
(dB)
(dB)
(dB)
(dBm)
(dBm)
(dBm)
(dBm)
1.2
13
0.5
16.5
23
11
15 [2]
2 [2]
[1]
ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[2]
The third order intercept point is measured at 30 dBm per tone at RF_IN (f1 = 100 MHz; f2 = 100.2 MHz)
1.2 Features and benefits
Low noise high gain microwave MMIC
Applicable between 40 MHz and 6 GHz
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
110 GHz transit frequency - SiGe:C technology
Power-down mode current consumption < 1 A
ESD protection > 1 kV Human Body Model (HBM) on all pins
1.3 Applications
GPS
FM LNA
Low-noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog / digital cordless applications
BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
2. Pinning information
Table 2.
Pinning
Pin
Description
1
R_BIAS
2
RF_IN
3
GND
4
RF_OUT
5
ENABLE
6
Simplified outline
6
5
Graphic symbol
4
5
6
2
4
1
1
VCC
3
sym128
2
3
Transparent
top view
3. Ordering information
Table 3.
Ordering information
Type number
BGU7003W
Package
Name
Description
Version
XSON6
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 1.45 0.5 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code
BGU7003W
UW
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
Unit
VCC
supply voltage
RF input AC coupled
-
3.0
V
ICC(tot)
total supply current
configurable with external resistor
-
25
mA
Ptot
total power dissipation
Tsp 103 C
-
70
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
[1]
[1]
Tsp is the temperature at the solder point of the ground lead.
6. Thermal characteristics
BGU7003W
Product data sheet
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
Typ
Unit
235
K/W
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
7. Characteristics
Table 7.
Characteristics
Tamb = 25 C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE 0.7 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol
Parameter
Conditions
VCC
supply voltage
RF input AC coupled
ICC(tot)
total supply current
configurable with
external resistor
[1]
VENABLE 0.4 V
[1]
Tamb
ambient temperature
s212
insertion power gain
Min
Typ
Max
Unit
2.2
-
2.85
V
3
-
15
mA
-
-
0.001
mA
40
+25
+85
C
Tamb = 25 C
f = 100 MHz
[2]
21.0
22.5
-
dB
f = 900 MHz
[2]
18.5
20.0
-
dB
16.0
17.5
-
dB
f = 2.4 GHz
[2]
14.0
15.2
-
dB
f = 5.8 GHz
[2]
10.0
11.4
-
dB
f = 100 MHz
[2]
20.0
22.5
-
dB
f = 900 MHz
[2]
17.5
20.0
-
dB
f = 1.575 GHz
[2]
15.0
17.5
-
dB
f = 2.4 GHz
[2]
13.0
15.2
-
dB
f = 5.8 GHz
[2]
f = 1.575 GHz
40 C Tamb +85 C
MSG
NFmin
maximum stable gain
minimum noise figure
9.0
11.4
-
dB
f = 100 MHz
-
33.8
-
dB
f = 900 MHz
-
23.8
-
dB
f = 1.575 GHz
-
20.5
-
dB
f = 2.4 GHz
-
17.8
-
dB
f = 5.8 GHz
-
15.4
-
dB
f = 100 MHz
-
0.6
-
dB
f = 900 MHz
-
0.6
-
dB
f = 1.575 GHz
-
0.7
-
dB
f = 2.4 GHz
-
0.8
-
dB
f = 5.8 GHz
-
1.5
-
dB
[1]
ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[2]
Guaranteed by design and characterization.
Table 8.
ENABLE (pin 5)
40 C Tamb +85 C
BGU7003W
Product data sheet
VENABLE (V)
State
0.4
OFF
0.7
ON
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Rev. 2 — 11 April 2013
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
001aaj652
30
ICC(tot)
(mA)
(3)
20
(2)
10
(1)
0
0
1000
2000
3000
4000
5000
6000 7000
Rbias (Ω)
Tamb = 25 C.
(1) VCC = 2.2 V
(2) VCC = 2.5 V
(3) VCC = 2.85 V
Fig 1.
Total supply current as a function of bias resistor; typical values
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
6 GHz
100 MHz
-5
-0.2
-135°
-2
-0.5
-45°
-1
-90°
1.0
001aaj653
Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = 30 dBm; Z0 = 50 .
Fig 2.
BGU7003W
Product data sheet
Input reflection coefficient (S11); typical values
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
100 MHz
-0.2
-135°
6 GHz
-5
-2
-0.5
-45°
-1
1.0
-90°
001aaj654
Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = 30 dBm; Z0 = 50 .
Fig 3.
Output reflection coefficient (S22); typical values
001aaj655
30
001aaj657
0
|s21|2
(dB)
|s12|2
(dB)
20
−20
10
−40
0
0
2000
4000
6000
−60
0
f (MHz)
Product data sheet
6000
Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V;
Pdrive = 30 dBm; Z0 = 50 .
Insertion power gain (s212) as a function of
frequency; typical values
BGU7003W
4000
f (MHz)
Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V;
Pdrive = 30 dBm; Z0 = 50 .
Fig 4.
2000
Fig 5.
Isolation (s122) as a function of frequency;
typical values
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
001aaj659
1
001aaj660
2.0
NFmin
(dB)
K
1.5
1.0
0.5
10−1
0
0
2000
4000
6000
0
2000
4000
6000
f (MHz)
f (MHz)
Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V;
Pdrive = 30 dBm; Z0 = 50 .
Fig 6.
Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V;
Pdrive = 30 dBm; Z0 = 50 .
Rollet’s stability factor as a function of
frequency; typical values
Fig 7.
Minimum noise figure as a function of
frequency; typical values
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
6 GHz
+0.2
0.4
+5
100 MHz
180°
0
0.2
1
0.5
2
5
10
0°
0
-5
-0.2
-135°
0.2
-2
-0.5
-45°
-1
-90°
1.0
001aaj661
Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V.
Fig 8.
BGU7003W
Product data sheet
Optimum source reflection coefficient for minimum noise figure; typical values
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
001aaj662
0.3
rn(eq)
0.2
0.1
0
0
2000
4000
6000
f (MHz)
Tamb = 25 C; ICC(tot) = 5.0 mA; VCC = 2.5 V.
Normalized to 50 .
Fig 9.
Equivalent noise resistance as a function of frequency; typical values
8. Application information
8.1 High-ohmic FM LNA
Table 9.
Characteristics [1]
Tamb = 25 C; VCC = 2.85 V; ICC(tot) = 3.2 mA [2]; VENABLE 0.7 V; f = 100 MHz; ZS = ZL = 50 unless
otherwise specified. All measurements are done with the SMA-connectors as reference plane.
Symbol
Min Typ Max Unit
noise figure
-
1.2
-
dB
s212
Insertion power gain
-
13
-
dB
RLin
input return loss
-
0.5
-
dB
RLout
output return loss
-
16.5 -
dB
Pi(1dB)
input power at 1 dB gain compression
-
23
-
dBm
PL(1dB)
output power at 1 dB gain compression
-
11
-
dBm
IP3I
input third-order intercept point
[3]
-
15
-
dBm
output third-order intercept point
[3]
-
2
-
dBm
[1]
Product data sheet
Conditions
NF
IP3O
BGU7003W
Parameter
See application note: AN11034 for details.
[2]
ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[3]
The third order intercept point is measured at 30 dBm per tone at RF_IN (f1 = 100 MHz; f2 = 100.2 MHz)
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Rev. 2 — 11 April 2013
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
8.2 50 ohm FM LNA
Table 10. Characteristics[1]
Tamb = 25 C; VCC = 2.8 V; ICC(tot) = 4.3 mA [2]; VENABLE 0.7 V; f = 100 MHz; ZS = ZL = 50 (input
and output matched to 50 ) unless otherwise specified. All measurements are done with the
SMA-connectors as reference plane.
Symbol
Parameter
Min Typ
Max Unit
NF
noise figure
-
1.5
-
dB
s212
Insertion power gain
-
15
-
dB
RLin
input return loss
-
9
-
dB
RLout
output return loss
-
14
-
dB
Pi(1dB)
input power at 1 dB gain compression
-
20
-
dBm
PL(1dB)
output power at 1 dB gain compression
IP3I
IP3O
[1]
BGU7003W
Product data sheet
Conditions
-
6
-
dBm
input third-order intercept point
[3]
-
12.5 -
dBm
output third-order intercept point
[3]
-
2.5
dBm
-
See application note AN11035 for details.
[2]
ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[3]
The third order intercept point is measured at 30 dBm per tone at RF_IN (f1 = 100 MHz; f2 = 100.2 MHz)
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
9. Package outline
SOT886
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
b
1
2
3
4x
(2)
L
L1
e
6
5
e1
4
e1
6x
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
max
nom
min
A(1)
0.5
A1
b
D
E
0.04 0.25 1.50 1.05
0.20 1.45 1.00
0.17 1.40 0.95
e
e1
0.6
0.5
L
L1
0.35 0.40
0.30 0.35
0.27 0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
Outline
version
SOT886
sot886_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
04-07-22
12-01-05
MO-252
Fig 10. Package outline SOT886 (XSON6)
BGU7003W
Product data sheet
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Rev. 2 — 11 April 2013
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Soldering
1.250
0.675
0.370
(6×)
0.500
1.700
0.500
0.270
(6×)
solder resist
solder paste = solderland
occupied area
Dimensions in mm
0.325
(6×)
0.425
(6×)
sot886_fr
Reflow soldering is the only recommended soldering method.
Fig 11. Reflow soldering footprint
12. Abbreviations
Table 11.
Acronym
BGU7003W
Product data sheet
Abbreviations
Description
AC
Alternating Current
CDMA
Code Division Multiple Access
DC
Direct Current
FM
Frequency Modulation
FR4
Flame Retardant 4
GPS
Global Positioning System
LNA
Low-Noise Amplifier
MMIC
Monolithic Microwave Integrated Circuit
RF
Radio Frequency
SiGe:C
Silicon Germanium Carbon
SMA
SubMiniature version A
WLAN
Wireless Local Area Network
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
13. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGU7003W v.2
20130411
Product data sheet
-
BGU7003W v.1
Modifications:
BGU7003W v.1
BGU7003W
Product data sheet
•
Figure 10 on page 9: figure has been updated.
20110830
Product data sheet
-
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Rev. 2 — 11 April 2013
-
© NXP B.V. 2013. All rights reserved.
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGU7003W
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BGU7003W
Product data sheet
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BGU7003W
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
16. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
8.1
8.2
9
10
11
12
13
14
14.1
14.2
14.3
14.4
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 7
High-ohmic FM LNA . . . . . . . . . . . . . . . . . . . . . 7
50 ohm FM LNA . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 April 2013
Document identifier: BGU7003W
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