BGU7003

BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I I I I I Low noise high gain microwave MMIC Applicable between 40 MHz and 6 GHz Integrated temperature stabilized bias for easy design Bias current configurable with external resistor Noise figure NF = 0.80 dB at 1.575 GHz Insertion power gain = 18.3 dB at 1.575 GHz 110 GHz transit frequency - SiGe:C technology Power-down mode current consumption < 1 µA Optimized performance at low 5 mA supply current ESD protection > 1 kV Human Body Model (HBM) on all pins 1.3 Applications I I I I I GPS Satellite radio Low-noise amplifiers for microwave communications systems WLAN and CDMA applications Analog / digital cordless applications NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; f = 1575 MHz; ZS = ZL = 50 Ω (input and output matched to 50 Ω) unless otherwise specified. Symbol VCC ICC(tot) Tamb Ptot |s21|2 NF Pi(1dB) IP3I Parameter supply voltage total supply current ambient temperature total power dissipation Insertion power gain noise figure input power at 1 dB gain compression input third-order intercept point jammers at f1 = f + 138 MHz and f2 = f + 276 MHz Tsp ≤ 103 °C [2] Conditions RF input AC coupled configurable with external resistor [1] Min Typ 2.2 3 −40 +25 18.3 0.80 −20.1 −0.2 Max Unit 2.85 V 15 +85 70 mA °C mW dB dB dBm dBm [1] [2] ICC(tot) = ICC + IRF_OUT + IR_BIAS. Tsp is the temperature at the solder point of the ground lead. 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description R_BIAS RF_IN GND RF_OUT ENABLE VCC 6 5 4 bottom view 1 3 sym128 Simplified outline 1 2 3 Graphic symbol 5 6 2 4 3. Ordering information Table 3. Ordering information Package Name BGU7003 XSON6 Description Version plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm Type number 4. Marking Table 4. BGU7003 Marking codes Marking code B3 Type number BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 2 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCC ICC(tot) Ptot Tstg Tj [1] Parameter supply voltage total supply current total power dissipation storage temperature junction temperature Conditions RF input AC coupled configurable with external resistor Tsp ≤ 103 °C [1] Min Max −65 3.0 25 70 +150 150 Unit V mA mW °C °C Tsp is the temperature at the solder point of the ground lead. 6. Thermal characteristics Table 6. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 235 Unit K/W 7. Characteristics Table 7. Characteristics Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter VCC ICC(tot) Tamb |s21|2 supply voltage total supply current ambient temperature insertion power gain Tamb = 25 °C f = 1.575 GHz f = 2.4 GHz f = 5.8 GHz −40 °C ≤ Tamb ≤ 85 °C f = 1.575 GHz f = 2.4 GHz f = 5.8 GHz MSG maximum stable gain f = 1.575 GHz f = 2.4 GHz f = 5.8 GHz NFmin minimum noise figure f = 1.575 GHz f = 2.4 GHz f = 5.8 GHz [1] [2] BGU7003_1 Conditions RF input AC coupled configurable with external resistor VENABLE ≤ 0.4 V [1] [1] Min Typ Max 2.2 3 −40 +25 2.85 15 +85 Unit V mA °C dB dB dB dB dB dB dB dB dB dB dB dB 0.001 mA 16.0 17.5 [2] [2] 14.0 15.2 10.0 11.4 15.0 17.5 13.0 15.2 9.0 11.4 20.5 17.8 15.4 0.70 0.80 1.5 - [2] [2] [2] ICC(tot) = ICC + IRF_OUT + IR_BIAS. Guaranteed by design and characterization. © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 3 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC Table 8. ENABLE (pin 5) −40 °C ≤ Tamb ≤ +85 °C VENABLE (V) ≤ 0.4 ≥ 0.7 State OFF ON 30 ICC(tot) (mA) 20 (2) 001aaj652 (3) 10 (1) 0 0 1000 2000 3000 4000 5000 6000 7000 Rbias (Ω) Tamb = 25 °C. (1) VCC = 2.2 V (2) VCC = 2.5 V (3) VCC = 2.85 V Fig 1. Total supply current as a function of bias resistor; typical values BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 4 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 + 0.2 0.4 0.2 180° 0 0.2 0.5 6 GHz 100 MHz − 0.2 −5 1 2 5 10 0° 0 +5 − 135° − 0.5 −1 − 90° −2 − 45° 1.0 001aaj653 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 2. Input reflection coefficient (S11); typical values 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 + 0.2 0.4 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 +5 100 MHz − 0.2 6 GHz −5 − 135° − 0.5 −1 − 90° −2 − 45° 1.0 001aaj654 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 3. Output reflection coefficient (S22); typical values BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 5 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 30 |s21|2 (dB) 20 001aaj655 0 |s12|2 (dB) −20 001aaj657 10 −40 0 0 2000 4000 f (MHz) 6000 −60 0 2000 4000 f (MHz) 6000 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 4. Insertion power gain (|s21|2) as a function of frequency; typical values Fig 5. Isolation (|s12|2) as a function of frequency; typical values 1 001aaj659 2.0 NFmin (dB) 001aaj660 K 1.5 1.0 0.5 10−1 0 2000 4000 f (MHz) 6000 0 0 2000 4000 f (MHz) 6000 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 6. Rollet’s stability factor as a function of frequency; typical values Fig 7. Minimum noise figure as a function of frequency; typical values BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 6 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 + 0.2 6 GHz 100 MHz 180° 0 0.2 0.5 1 2 5 10 0° 0.4 0.2 0 +5 − 0.2 −5 − 135° − 0.5 −1 − 90° −2 − 45° 1.0 001aaj661 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V. Fig 8. Optimum source reflection coefficient for minimum noise figure; typical values 0.3 rn(eq) 001aaj662 0.2 0.1 0 0 2000 4000 f (MHz) 6000 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V. Normalized to 50 Ω. Fig 9. Equivalent noise resistance as a function of frequency; typical values 8. Application information GPS LNA Other applications available. Please contact your local sales representative for more information. Application note(s) available on the NXP website. BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 7 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 8.1 Application circuit In Figure 10 the application diagram as supplied on the evaluation board is given. X3 Rb Vcc Ven GND C3 R3 1 RF in X1 L2 L1 C1 R1 L3 L4 C2 2 6 BGU7003 5 3 4 RF out X2 001aaj663 Fig 10. Circuit diagram of the evaluation board Table 9. List of components For circuit, see Figure 10. Component Description C1, C2 C3 L1 L2 L3 L4 R1 R2 R3 X1, X2 X3 capacitor capacitor inductor inductor inductor inductor resistor resistor resistor Value 100 pF 180 pF 2.7 nH 33 nH 3.9 nH 4.7 nH 180 Ω 0Ω 3300 Ω [1] [1] [1] Supplier name/type MurataGRM1555 MurataGRM1555 Remarks DC blocking decoupling Murata/LQW15A high quality input matching factor, low series resistance Murata/LQW15A high quality input matching factor, low series resistance Murata/LQG15HS Murata/LQG15HS output matching / DC shunt output matching bridge bias setting Johnson, end launch SMA 142-0701-841 Molex, PCB header, right angle, 1 row, 4 way 90121-0764 RF input / RF output bias connector [1] [1] [1] [1] [1] [1] SMA RF connector DC header - [1] all capacitors, inductors and resistors have 0402 footprint. BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 8 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 8.2 Application board layout Figure 11 shows the board layout with component identifications. X1 RF in Fig 11. Printed-Circuit Board (PCB) of the BGU7003 evaluation board 8.3 Printed-Circuit Board The material that has been used for the evaluation board is FR4 using the stack shown in Figure 12. 35 µm Cu 35 µm Cu 0.2 mm FR4 critical 0.8 mm FR4 only for mechanical rigidity of PCB 35 µm Cu 001aaj688 Fig 12. Stack of the PCB material JJ 02/2008 FR4 H = 0.2 Er = 4.6 Semiconductors L1 L2 C1 R3 BGU7003 L3 R1 L4 C2 C3 R2 BGU7003_v2.0 Application board GND Rb Vcc Ven GND X3 Material supplier is ISOLA DURAVER; εr = 4.6 to 4.9; tan δ = 0.02. RF out X2 001aaj664 BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 9 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 8.4 GPS evaluation board Table 10. GPS application characteristics Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω) unless otherwise specified. Symbol |s21|2 |s11|2 |s22|2 |s12|2 NF Pi(1dB) PL(1dB) IP3I Parameter Insertion power gain input return loss output return loss isolation noise figure input power at 1 dB gain compression output power at 1 dB gain compression input third-order intercept point jammers at f1 = f + 138 MHz and f2 = f + 276 MHz f1 = f + 5 MHz; f2 = f + 10 MHz Conditions Min Typ 18.3 −5.4 −19.5 −24.6 0.80 −20.1 −2.8 −0.2 −5.2 Max Unit dB dB dB dB dB dBm dBm dBm dBm 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 + 0.2 0.4 0.2 0° 0 +5 500 MHz 180° 0 0.2 0.5 1 2 5 10 − 0.2 3 GHz −5 − 135° − 0.5 −1 − 90° −2 − 45° 1.0 001aaj665 Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 13. Input reflection coefficient (S11); typical values BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 10 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 + 0.2 500 MHz 0 0.2 0.5 1 2 5 10 0° 0.4 0.2 0 +5 180° − 0.2 −5 3 GHz − 135° − 0.5 −1 − 90° 001aaj666 −2 − 45° 1.0 Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 14. Output reflection coefficient (S22); typical values 0 |s11 (dB) |2 −2 001aaj667 0 |s22|2 (dB) −10 001aaj668 −4 −6 −20 −8 −10 0 500 1000 1500 2000 2500 3000 3500 f (MHz) −30 0 500 1000 1500 2000 2500 3000 3500 f (MHz) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 15. Input return loss (|s11|2) as a function of frequency; typical values Fig 16. Output return loss (|s22|2) as a function of frequency; typical values BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 11 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 30 |S21|2 (dB) 20 001aaj669 0 |S12|2 (dB) −20 001aaj702 10 −40 0 0 500 1000 1500 2000 2500 3000 3500 f (MHz) −60 0 500 1000 1500 2000 2500 3000 3500 f (MHz) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 17. Insertion power gain (|s21|2) as a function of frequency; typical values Fig 18. Reverse Isolation (|s12|2) as a function of frequency; typical values 40 P (dB) 0 PL IP3I = −0.2 dBm 001aaj671 40 P (dB) 0 PL IP3I = −5.2 dBm 001aaj672 −40 IMD3 −80 −40 IMD3 −80 −120 −40 −30 −20 −10 0 10 Pdrive (dBm) −120 −40 −30 −20 −10 0 Pdrive (dBm) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; f1 = f + 138 MHz; f2 = f + 276 MHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; f1 = f + 5 MHz; f2 = f + 10 MHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω) Fig 19. Load power and third order intermodulation distortion as function of drive power; typical values Fig 20. Load power and third order intermodulation distortion as function of drive power; typical values BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 12 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 22 Gp (dB) 18 001aaj673 25 Gp (dB) 20 Gp 001aaj674 2 NF (dB) 1.5 15 NF 14 10 1 0.5 10 −35 −31 −27 −23 −19 −15 Pdrive (dBm) 5 1475 1525 1575 1625 f (MHz) 0 1675 Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 21. Power gain as a function of drive power; typical values Fig 22. Power gain and noise figure as function of frequency; typical values BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 13 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 9. Package outline XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm SOT891 1 2 b 3 4× (1) L1 e L 6 e1 5 e1 4 6× (1) A A1 D E terminal 1 index area 0 1 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 max 0.04 b 0.20 0.12 D 1.05 0.95 E 1.05 0.95 e 0.55 e1 0.35 L 0.35 0.27 L1 0.40 0.32 2 mm Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION SOT891 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 Fig 23. Package outline SOT891 (XSON6) BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 14 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 10. Soldering 1.05 0.5 (6×) 1.4 0.7 0.6 (6×) solder resist solder land plus solder paste occupied area Dimensions in mm 0.15 (6×) 0.25 (6×) 0.35 sot891_fr Reflow soldering is the only recommended soldering method. Fig 24. Reflow soldering footprint 11. Abbreviations Table 11. Acronym AC CDMA DC FR4 GPS LNA MMIC RF SiGe:C SMA WLAN Abbreviations Description Alternating Current Code Division Multiple Access Direct Current Flame Retardant 4 Global Positioning System Low-Noise Amplifier Monolithic Microwave Integrated Circuit Radio Frequency Silicon Germanium Carbon SubMiniature version A Wireless Local Area Network 12. Revision history Table 12. Revision history Release date 20090302 Data sheet status Product data sheet Change notice Supersedes Document ID BGU7003_1 BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 15 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 16 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.2 8.3 8.4 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information GPS LNA . . . . . . . . . . 7 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 8 Application board layout . . . . . . . . . . . . . . . . . . 9 Printed-Circuit Board . . . . . . . . . . . . . . . . . . . . 9 GPS evaluation board. . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 March 2009 Document identifier: BGU7003_1