BLA6H1011-600

BLA6H1011-600 LDMOS avionics power transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 1030 to 1090 VDS (V) 48 PL (W) 600 Gp (dB) 17 ηD (%) 52 tr (ns) 11 tf (ns) 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: Output power = 600 W Power gain = 17 dB Efficiency = 52 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1030 MHz to 1090 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 1.3 Applications 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 1 3 3 4 4 5 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLA6H1011-600 Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min 0.5 −65 Max 100 13 72 +150 200 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Zth(j-case) Thermal characteristics Parameter transient thermal impedance from junction to case Conditions Tcase = 85 °C; PL = 600 W tp = 100 μs; δ = 10 % tp = 50 μs; δ = 2 % BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. Typ 0.06 Unit K/W 0.035 K/W © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 2 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 270 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 270 mA Min 100 1.25 32 1.6 Typ 1.8 42 3 100 Max Unit 1.4 140 169 V μA A nA S mΩ 2.25 V V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A Table 7. RF characteristics Mode of operation: pulsed RF; tp = 50 μs; δ = 2 %; RF performance at VDS = 48 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit. Symbol PL VDS Gp RLin PL(1dB) ηD Pdroop(pulse) tr tf Parameter output power drain-source voltage power gain input return loss output power at 1 dB gain compression drain efficiency pulse droop power rise time fall time PL = 600 W PL = 600 W PL = 600 W PL = 600 W PL = 600 W PL = 600 W PL = 600 W Conditions Min Typ Max Unit 600 16 8 47 17 12 700 52 0 11 5 48 0.3 30 30 W V dB dB W % dB ns ns 6.1 Ruggedness in class-AB operation The BLA6H1011-600 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 48 V; IDq = 100 mA; PL = 600 W; tp = 50 μs; δ = 2 %; f = 1030 MHz. BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 3 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f MHz 1030 1060 1090 ZS Ω 1.702 − j1.816 1.815 − j1.760 1.912 − j1.751 ZL Ω 0.977 + j0.049 1.033 + j0.221 1.086 + j0.379 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Performance curves 20 Gp (dB) 16 001aal832 60 ηD (%) 40 001aal833 (1) (2) (1) (2) 12 8 20 4 0 0 300 600 PL (W) 900 0 0 200 400 600 PL (W) 800 Th = 25 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Th = 25 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Fig 2. Power gain as a function of load power; typical values Fig 3. Drain efficiency as a function of load power; typical values BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 4 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 20 RLin (dB) 16 001aal834 800 PL (W) 600 (1) 001aal835 (2) 12 400 8 200 4 0 1025 0 1035 1045 1055 1065 1075 1085 1095 f (MHz) 0 6 12 Pi (W) 18 Th = 25 °C; PL = 600 W; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. Th = 25 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Fig 4. Input return loss as a function of frequency; typical values Fig 5. Load power as a function of input power; typical values 20 Gp (dB) 16 001aal836 60 ηD (%) 001aal837 (1) (2) (1) 40 12 (2) 8 20 4 0 0 200 400 600 PL (W) 800 0 0 200 400 600 PL (W) 800 Th = 65 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Th = 65 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Fig 6. Power gain as a function of load power; typical values Fig 7. Drain efficiency as a function of load power; typical values BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 5 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 800 PL (W) 600 001aal838 (1) (2) 400 200 0 0 4 8 12 16 Pi (W) 20 Th = 65 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Fig 8. Load power as a function of input power; typical values 7.3 Curves measured under Mode-S ELM pulse-conditions 21 Gp (dB) 19 (1) (2) 001aal839 80 ηD (%) 60 001aal840 (1) (2) 17 (3) 40 15 20 13 11 0 200 400 600 PL (W) 800 0 0 200 400 600 PL (W) 800 f = 1030 MHz; IDq = 100 mA. (1) Th = −40 °C (2) Th = +25 °C (3) Th = +65 °C f = 1030 MHz; IDq = 100 mA. (1) Th = 25 °C (2) Th = 65 °C Fig 9. Power gain as a function of load power; typical values Fig 10. Drain efficiency as a function of load power; typical values BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 6 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 800 PL (W) 600 (1) (2) 001aal841 (3) 400 200 0 0 4 8 12 Pi (W) 16 f = 1030 MHz; IDq = 100 mA. (1) Th = −40 °C (2) Th = +25 °C (3) Th = +65 °C Fig 11. Load power as a function of input power; typical values 8. Test information Table 9. List of components For test circuit see Figure 12. Component C1, C4, C7 C2 C3, C5, C8 C6, C9 C10 C11 R1 R2 R3 [1] [2] [3] Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor metal film resistor resistor Value 82 pF 22 μF; 35 V 39 pF 1 nF 20 nF 47 μF; 63 V 56 Ω 51 Ω 11 Ω [2] [2] [3] [1] Remarks 0603 American Technical Ceramics type 800B or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. American Technical Ceramics type 200B or capacitor of same quality. BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 7 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor C8 C3 C9 C2 C4 C5 R1 C6 R3 C11 C10 R2 C1 C7 001aal842 Printed-Circuit Board (PCB): Duroid 6006; εr = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm. See Table 9 for a list of components. Fig 12. Component layout for class-AB production test circuit BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 8 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 q H1 C B w2 M C M c 1 2 H U2 p E1 w1 M A M B M E 5 L A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.7 4.2 b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.26 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 41.28 10.29 0.25 41.02 10.03 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION SOT539A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-03-03 10-02-02 Fig 13. Package outline SOT539A BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 9 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 10. Abbreviations Table 10. Acronym IFF LDMOS LDMOST RF SMD TCAS VSWR Abbreviations Description Identification Friend or Foe Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface Mounted Device Traffic Collision Avoidance System Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Release date 20100422 Data sheet status Product data sheet Change notice Supersedes Document ID BLA6H1011-600_1 BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 10 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the © NXP B.V. 2010. All rights reserved. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 01 — 22 April 2010 11 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 22 April 2010 12 of 13 NXP Semiconductors BLA6H1011-600 LDMOS avionics power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 4 Curves measured under Mode-S ELM pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 April 2010 Document identifier: BLA6H1011-600_1