BUK116-50L,118

Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK116-50L/S QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 5 V VIS = 8 V SYMBOL PARAMETER VPSN Protection supply voltage BUK116-50L BUK116-50S APPLICATIONS General controller for driving lamps motors solenoids heaters FEATURES Vertical power DMOS output stage Low on-state resistance Logic and protection supply from separate pin Low operating supply current Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by protection supply Protection circuit condition indicated by flag pin 5 V logic compatible input level Separate input pin for higher frequency drive ESD protection on input, flag and protection supply pins Over voltage clamping for turn off of inductive loads Both linear and switching operation are possible PINNING - SOT426 PIN UNIT 50 50 125 150 V A W ˚C 35 28 mΩ mΩ NOM. UNIT 5 10 V V FUNCTIONAL BLOCK DIAGRAM PROTECTION SUPPLY FLAG DRAIN O/V CLAMP POWER INPUT MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PIN CONFIGURATION SYMBOL DESCRIPTION 1 input 2 flag 3 (connected to mb) 4 protection supply 5 source D mb TOPFET P F I P 3 1 2 S 4 5 Fig. 2. mb MAX. Fig. 3. drain July 1996 1 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S BUK116-50L/S LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDSS VIS VFS VPS PARAMETER CONDITIONS Voltages Continuous off-state drain source voltage1 Continuous input voltage Continuous flag voltage Continuous supply voltage MIN. MAX. UNIT - 50 V 0 0 0 11 11 11 V V V VIS = 0 V - Currents VIS = - 8 5 V ID ID IDRM Continuous drain current Continuous drain current Repetitive peak on-state drain current Tmb ≤ 25 ˚C Tmb ≤ 100 ˚C Tmb ≤ 25 ˚C - 50 45 31 28 200 180 A A A Ptot Tstg Tj Thermal Total power dissipation Storage temperature Junction temperature2 Tmb = 25 ˚C continuous -55 - 125 150 150 W ˚C ˚C Tsold Lead temperature during soldering - 250 ˚C OVERLOAD PROTECTION LIMITING VALUES With the protection supply connected, TOPFET can protect itself from two types of overload over temperature and short circuit load. SYMBOL An n-MOS transistor turns on between the input and source to quickly discharge the power MOSFET gate capacitance. PARAMETER For internal overload protection to remain latched while the control circuit is high, external series input resistance must be provided. Refer to INPUT CHARACTERISTICS. CONDITIONS MIN. VIS = 3 UNIT 8 5 - V 4.4 5.4 4 5 - V V VPSP Protection supply voltage VDDP(T) Over temperature protection VPS = VPSN Protected drain source supply voltage VIS = 10 V; RI ≥ 2 kΩ VIS = 5 V; RI ≥ 1 kΩ - 50 50 V V VDDP(P) Short circuit load protection VPS = VPSN; L ≤ 10 µH Protected drain source supply voltage4 VIS = 10 V; RI ≥ 2 kΩ VIS = 5 V; RI ≥ 1 kΩ Instantaneous overload dissipation - 24 45 4 V V kW MIN. MAX. UNIT - 2 kV PDSM for valid protection BUK116-50L BUK116-50S MAX. ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The minimum supply voltage required for correct operation of the overload protection circuits. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. July 1996 2 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S BUK116-50L/S OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER IDRRM EDSM Repetitive peak clamping drain current RIS ≥ 100 Ω Non-repetitive inductive turn-off IDM = 27 A; RIS ≥ 100 Ω energy2 Repetitive inductive turn-off energy RIS ≥ 100 Ω; Tmb ≤ 85 ˚C; IDM = 16 A; VDD ≤ 20 V; f = 250 Hz EDRM IDIRM CONDITIONS MIN. MAX. UNIT - 50 1 A J - 80 mJ - 50 mA MIN. MAX. UNIT - 50 A 1 Repetitive peak drain to input current3 RIS = 0 Ω; tp ≤ 1 ms REVERSE DIODE LIMITING VALUE SYMBOL PARAMETER CONDITIONS IS Continuous forward current Tmb = 25 ˚C; VIS = VPS = VFS = 0 V THERMAL CHARACTERISTIC SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT - 0.8 1.0 K/W MIN. TYP. MAX. UNIT 50 - 65 V 50 - 70 V - 0.5 1 10 20 µA µA - 10 100 µA - 22 28 28 35 mΩ mΩ Thermal resistance Rth j-mb Junction to mounting base - STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(CL)DSR Drain-source clamping voltage RIS = 100 Ω; ID = 10 mA V(CL)DSR Drain-source clamping voltage IDSS IDSR IDSR RDS(ON) RIS = 100 Ω; IDM = 1 A; tp ≤ 300 µs; δ ≤ 0.01 Zero input voltage drain current VDS = 12 V; VIS = 0 V Drain source leakage current VDS = 50 V; RIS = 100 Ω; Drain source leakage current VDS = 40 V; RIS = 100 Ω; Tj = 125 ˚C Drain-source on-state resistance IDM = 25 A; tp ≤ 300 µs; δ ≤ 0.01 VIS = 8 V VIS = 5 V 1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS. 2 While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS. 3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source voltage becoming positive. July 1996 3 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S BUK116-50L/S OVERLOAD PROTECTION CHARACTERISTICS With adequate protection supply voltage TOPFET detects when one of the overload thresholds is exceeded. SYMBOL Provided there is adequate input series resistance it switches off and remains latched off until reset by the protection supply pin. PARAMETER Refer also to OVERLOAD PROTECTION LIMITING VALUES and INPUT CHARACTERISTICS. CONDITIONS 1 MIN. TYP. MAX. UNIT - 550 0.4 - mJ ms 150 - - ˚C MIN. TYP. MAX. UNIT 17 28 - S - 80 160 - A A MIN. TYP. MAX. UNIT Tj = 150 ˚C 1.5 1.0 0.2 0.4 2.5 - 0.35 1.0 3.5 - mA mA V V IP = 1.35 mA 11 13 - V MIN. TYP. MAX. UNIT VPS = V ; Tmb = 25 ˚C; L ≤ 10 µH VDD = 13 V; VIS = 10 V VDD = 13 V; VIS = 10 V 2 PSN EDS(TO) td sc Short circuit load protection Overload threshold energy Response time Tj(TO) Over temperature protection VPS = VPSN Threshold junction temperature from ID ≥ 2.5 A3 TRANSFER CHARACTERISTICS Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 12 V; IDM = 25 A tp ≤ 300 µs; δ ≤ 0.01 ID Drain current4 VDS = 13 V; VIS = 5 V VIS = 10 V PROTECTION SUPPLY CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL IPS, IPSL VPSR V(CL)PS PARAMETER Protection supply Protection supply current CONDITIONS normal operation or protection latched BUK116-50L BUK116-50S Protection reset voltage5 Protection clamp voltage VPS = 5 V VPS = 10 V REVERSE DIODE CHARACTERISTICS Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS VSDS Forward voltage IS = 20 A; VIS = VPS = VFS = 0 V; tp = 300 µs - 0.9 1.2 V trr Reverse recovery time not applicable6 - - - - 1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDSP maximum. 2 At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA. 3 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. 4 During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS. 5 The supply voltage below which the overload protection circuits will be reset. 6 The reverse diode of this type is not intended for applications requiring fast reverse recovery. July 1996 4 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S BUK116-50L/S INPUT CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 1.0 0.5 11 1.5 10 13 2.0 100 - V V nA V - 55 95 35 60 - Ω Ω Ω Ω VDS > 30 V 100 - - Ω VII = 5 V VII = 10 V 1 2 - - kΩ kΩ Normal operation VIS(TO) Input threshold voltage IIS V(CL)IS Input current Input clamp voltage VDS = 5 V; ID = 1 mA Tmb = 150 ˚C VIS = 10 V II = 1 mA Overload protection latched RISL Input resistance1 VPS = 5 V II = 5 mA; Tmb = 150 ˚C II = 5 mA; Tmb = 150 ˚C VPS = 10 V RIS RI Application information External input resistances for internal overvoltage clamping2 3 internal overload protection (see figure 29) RI = ∞ Ω; RIS = ∞ Ω; SWITCHING CHARACTERISTICS Tmb = 25 ˚C; RI = 50 Ω; RIS = 50 Ω (see figure 29); resistive load RL = 10 Ω. For waveforms see figure 28. SYMBOL PARAMETER CONDITIONS td on Turn-on delay time VDD = 15 V; VIS: 0 V ⇒ 10 V tr Rise time td off Turn-off delay time tf Fall time VDD = 15 V; VIS: 10 V ⇒ 0 V MIN. TYP. MAX. UNIT - 10 - ns - 35 - ns - 280 - ns - 120 - ns MIN. TYP. MAX. UNIT CAPACITANCES Tmb = 25 ˚C; f = 1 MHz SYMBOL PARAMETER CONDITIONS Ciss Input capacitance VDS = 25 V; VIS = 0 V - 1250 1800 pF Coss Output capacitance VDS = 25 V; VIS = 0 V - 650 1000 pF Crss Reverse transfer capacitance VDS = 25 V; VIS = 0 V - 150 250 pF Cpso Protection supply pin capacitance VPS = 10 V - 30 - pF Cfso Flag pin capacitance VFS = 10 V; VPS = 0 V - 20 - pF 1 The resistance of the internal transistor which discharges the power MOSFET gate capacitance when overload protection operates. The external drive circuit should be such that the input voltage does not exceed VIS(TO) minimum when the overload protection has operated. Refer also to figure for latched input characteristics. 2 Applications using a lower value for RIS would require external overvoltage protection. 3 For applications requiring a lower value for RI, an external overload protection strategy is possible using the flag pin to ‘tell’ the control circuit to switch off the input. July 1996 5 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S FLAG DESCRIPTION The flag pin provides a means to detect the presence of the protection supply and indicate the state of the overload detectors. The flag is the open drain of an n-MOS transistor and requires an external pull-up resistor1. It is suitable for both 5 V and 10 V logic. Flag may be used to implement an external protection strategy2 for applications which require low input drive impedance. BUK116-50L/S TRUTH TABLE CONDITION DESCRIPTION FLAG NORMAL Normal operation and adequate protection supply voltage LOGIC LOW OVER TEMP. Over temperature detected LOGIC HIGH SHORT CIRCUIT Overload condition detected LOGIC HIGH SUPPLY FAULT Inadequate protection supply voltage LOGIC HIGH FLAG CHARACTERISTICS Tmb = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VFS IFSS Flag ‘low’ Flag voltage Flag saturation current normal operation IF = 1.6 mA VFS = 10 V - 0.15 15 0.4 - V mA IFS VPSF Flag ‘high’ Flag leakage current Protection supply threshold voltage overload or fault VFS = 10 V VFF = 5 V; RF = 3 kΩ; - - 10 µA 2.5 3.3 3.3 4.2 4 5 V V V(CL)FS Flag clamping voltage IF = 1 mA; VPS = 0 V 11 13 - V VFF =5 V VFF =10 V 1 2 10 20 50 100 kΩ kΩ BUK116-50L BUK116-50S Application information RF Suitable external pull-up resistance 1 Even if the flag pin is not used, it is recommended that it is connected to the protection supply via a pull-up resistor. It should not be left floating. 2 Low pass filtering of the flag signal may be advisable to prevent false tripping. July 1996 6 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S 120 BUK116-50L/S Normalised Power Derating PD% BUK116-50L/S Zth / (K/W) 10 110 100 90 D= 1 80 0.5 70 60 50 0.2 0.1 0.05 0.1 0.02 40 30 0.01 20 10 0 0 20 40 60 80 100 Tmb / C 120 Fig.4. Normalised limiting power dissipation. PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) 120 1E-05 1E-03 t/s tp T t 1E-01 1E+01 Fig.7. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% D= T 0.001 1E-07 140 tp PD 0 200 ID / A BUK116-50L/S 110 VIS / V = 100 90 11 10 9 150 8 80 7 70 60 50 100 6 5 40 30 4 50 20 10 3 2 0 0 20 40 60 80 Tmb / C 100 120 0 140 0 Fig.5. Normalised continuous drain current. ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V 1000 ID & IDM / A 4 8 12 16 VDS / V 20 24 28 32 Fig.8. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc BUK116-50L/S 50 ID / A BUK116-50L/S VIS / V = 10 Overload protection characteristics not shown 7 5 4 /ID )= 100 ON 10 us S( RD 40 tp = S VD 30 100 us 3 20 1 ms 10 DC 10 ms 10 100 ms 1 0 1 10 0 100 VDS / V Fig.6. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp July 1996 1 VDS / V 2 Fig.9. Typical on-state characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VIS; tp = 250 µs 7 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S BUK116-50L/S RDS(ON) / mOhm 50 BUK116-50L/S 3 VIS / V = a Normalised RDS(ON) = f(Tj) 4 1.5 40 6 5 30 1.0 20 10 7 0.5 10 0 0 0 10 20 30 40 50 -60 -40 -20 0 20 ID / A 80 100 120 140 Fig.13. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VIS ≥ 5 V Fig.10. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VIS; tp = 250 µs ID / A 40 60 Tj / C BUK116-50L/S 230 Tj(TO) / C BUK116-50L/S 150 220 210 200 100 190 BUK116-50S 180 50 170 BUK116-50L 160 150 0 0 2 4 6 8 0 10 2 4 VIS / V Fig.11. Typical transfer characteristics, Tj = 25 ˚C. ID = f(VIS) ; conditions: VDS = 12 V; tp = 250 µs 40 gfs / S 6 VPS / V 8 10 Fig.14. Typical over temperature protection threshold Tj(TO) = f(VPS); conditions: VDS > 0.1 V PDSM% BUK116-50L/S 120 35 30 100 25 80 20 60 15 40 10 20 5 0 0 0 20 40 60 80 ID / A 100 120 140 160 -60 Fig.12. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 12 V; tp = 250 µs July 1996 -40 -20 0 20 40 60 Tmb / C 80 100 120 140 Fig.15. Normalised limiting overload dissipation. PDSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb) 8 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S 50 VDDP(P) / V BUK116-50L/S BUK116-50L/S 1.0 40 Energy & Time BUK116-50L/S 0.8 max Energy / J 30 0.6 20 0.4 10 0.2 0 0 Time / ms Tj(TO) 0 2 4 6 VIS / V 8 -60 10 20 60 100 Tmb / C 140 180 220 Fig.19. Typical overload protection characteristics. Conditions: VDD = 13 V; VPS = VPSN, VIS = 8 V; SC load Fig.16. Maximum drain source supply voltage for SC load protection. VDDP(P) = f(VIS); Tmb ≤ 150 ˚C VPSP / V -20 BUK116-50L/S 1.6 10 ESC(TO) / J BUK116-50L/S 1.4 1.2 8 BUK116-50L VIS / V = min BUK116-50S 6 1.0 5 0.8 10 0.6 4 BUK116-50L 5 10 0.4 2 BUK116-50S 0.2 0 0 0 2 4 6 VIS / V 8 0 10 td sc / ms 4 6 VPS / V 8 10 Fig.20. Typical overload protection energy, Tj = 25 ˚C ESC(TO) = f(VPS); conditions: VDS = 13 V, parameter VIS Fig.17. Minimum protection supply voltage for SC load protection. VPSP = f(VIS); Tmb ≥ 25 ˚C 10 2 BUK116-50L/S 50 BUK116-50L/S ID / A 40 1 PDSM 30 typ. 20 0.1 10 0 0.01 0.1 1 PD / kW 50 10 Fig.18. Typical overload protection characteristics. td sc = f(PDS); conditions: VPS ≥ VPSP; VIS ≥ 5 V July 1996 60 VDS / V 70 Fig.21. Typical clamping characteristics, 25 ˚C. ID = f(VDS); conditions: RIS = 100 Ω; tp ≤ 50 µs 9 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S BUK116-50L/S VIS(TO) / V IS / A 200 BUK116-50L/S max. 2 150 typ. 100 min. 1 50 0 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 0 120 140 IPS / mA 0.4 0.6 0.8 1 1.2 VSD / V 1.4 1.6 1.8 2 Fig.25. Typical reverse diode current, Tj = 25 ˚C. IS = f(VSDS); conditions: VIS = 0 V; tp = 250 µs Fig.22. Input threshold voltage. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V 1.0 0.2 BUK116-50L/S EDSM% 120 110 100 90 80 70 0.5 60 50 40 30 20 10 0 0 2 4 6 8 10 12 0 14 0 20 40 60 VPS / V Fig.23. Typical DC protection supply characteristics. IPS = f(VPS); normal or overload operation; Tj = 25 ˚C IISL / mA BUK116-50L/S 140 V(CL)DSR VDD + 0 9 7 0 6 VIS VDS + VPS - D RF TOPFET 5 0 4 VDD L ID 8 50 120 VDS 10 100 100 Fig.26. Normalised limiting clamping energy. EDSM% = f(Tmb); conditions: ID = 27 A 150 VPS / V = 11 80 Tmb / C RI = RIS P F I -ID/100 D.U.T. P S R 01 shunt 0 0 2 4 6 VIS / V 8 10 Fig.27. Clamping energy test circuit, RIS = 100 Ω. EDSM = 0.5 ⋅ LID2 ⋅ V(CL)DSR /(V(CL)DSR − VDD ) Fig.24. Typical latched input characteristics, 25 ˚C. IISL = f(VIS); after overload protection latched July 1996 10 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S VIS, VDS / V BUK116-50L/S BUK116-50L/S 1 mA Idsr 15 VDS 100 uA VIS 10 10 uA typ. 5 1 uA 0 100 nA 0 1 Time / us 2 0 20 40 60 80 Tj / C 100 120 140 Fig.31. Typical off-state leakage current. IDSR = f(Tj); Conditions: VDS = 40 V; RIS = 100 Ω. Fig.28. Typical resistive load switching waveforms RI = RIS = 50 Ω; RL = 10 Ω; VDD = 15 V; Tj = 25 ˚C Ips normalised to 25 C VII 1.5 D RI TOPFET P F I VIS P 1 S RIS 0.5 -60 Fig.29. External input resistances RI and RIS, generator voltage VII and input voltage VIS. 10,000 Capacitance / pF -20 20 60 Tj / C 100 140 180 Fig.32. Normalised protection supply current. IPS/IPS25 ˚C = f(Tj); VPS = VPSN BUK116-50L/S Ciss 1000 Coss Crss 100 0 10 30 20 40 50 VDS / V Fig.30. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VIS = 0 V; f = 1 MHz July 1996 11 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S BUK116-50L/S MECHANICAL DATA Dimensions in mm 10.3 MAX 4.5 MAX 1.4 MAX 2.5 15.4 11 MAX Net Mass: 1.5 g 0.85 MAX (x4) 3.4 1.7 1.7 3.4 0.5 Fig.33. SOT426 mounting base connected to centre pin (cropped short) MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 3.4 1.7 1.7 3.8 1.3 (x4) Fig.34. SOT426 soldering pattern for surface mounting. July 1996 12 Rev 1.000 Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK106-50L/S BUK116-50L/S DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1996 13 Rev 1.000