BYC8X-600

BYC8X-600 Hyperfast rectifier diode, low switching loss Rev. 02 — 13 March 2009 Product data sheet 1. Product profile 1.1 General description Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features and benefits Low reverse recovery current and low thermal resistance Reduces switching losses in associated MOSFET 1.3 Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 1.4 Quick reference data Table 1. VRRM IF(AV) Quick reference Conditions Min square-wave pulse; δ = 0.5; Th = 59 °C; see Figure 1; see Figure 2 IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; see Figure 5 IF = 8 A; Tj = 150 °C; see Figure 4 Typ Max 600 8 Unit V A repetitive peak reverse voltage average forward current Symbol Parameter Dynamic characteristics trr reverse recovery time 19 ns Static characteristics VF forward voltage 1.4 1.85 V NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 2. Pinning information Table 2. Pin 1 2 mb K A n.c. Pinning information Symbol Description cathode anode mounting base; isolated mb K A 001aaa020 Simplified outline Graphic symbol 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description BYC8X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" Version SOD113 4. Limiting values Table 4. Symbol VRRM VRWM IF(AV) IFRM IFSM Tstg Tj Limiting values Parameter repetitive peak reverse voltage crest working reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature square-wave pulse; δ = 0.5; Th = 59 °C; see Figure 1; see Figure 2 square-wave pulse; δ = 0.5; tp = 25 µs; Th = 59 °C tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C Conditions Min -40 Max 600 600 8 16 80 88 150 150 Unit V V A A A A °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). BYC8X-600_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 13 March 2009 2 of 9 NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 20 Ptot (W) 16 2.8 12 4.0 1.9 2.2 003aab471 a = 1.57 30 Ptot (W) 25 0.5 0.2 0.1 003aab472 δ =1 20 15 8 10 4 5 0 0 2 4 6 IF(AV) (A) 8 0 0 4 8 IF(AV) (A) 12 Fig 1. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values Fig 2. Forward power dissipation as a function of average forward current; square waveform; maximum values 5. Thermal characteristics Table 5. Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 55 Max 4.8 Unit K/W K/W thermal resistance from with heatsink compound; see Figure 3 junction to heatsink thermal resistance from junction to ambient free air 10 Zth(j-h) (K/W) 1 001aaf045 10−1 P δ= tp T 10−2 tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width BYC8X-600_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 13 March 2009 3 of 9 NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 6. Isolation characteristics Table 6. Symbol Visol(RMS) Cisol Isolation characteristics Parameter RMS isolation voltage isolation capacitance Conditions f = 1 MHz; RH = 65 %; between all pins and external heatsink from cathode to external heatsink Min Typ 10 Max 2500 Unit V pF 7. Characteristics Table 7. Symbol VF Characteristics Parameter forward voltage Conditions IF = 8 A; Tj = 150 °C; see Figure 4 IF = 8 A; Tj = 25 °C IF = 16 A; Tj = 150 °C IR reverse current VR = 500 V; Tj = 100 °C VR = 600 V Dynamic characteristics Qr trr recovered charge reverse recovery time IF = 1 A; dIF/dt = 100 A/µs IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; see Figure 5 IRM peak reverse recovery current IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C IF = 8 A; VR = 400 V; dIF/dt = 50 A/µs; Tj = 125 °C VFR forward recovery voltage IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 12 32 30 19 9.5 1.5 8 40 52 12 5.5 10 nC ns ns ns A A V Min Typ 1.4 2 1.7 1.1 9 Max 1.85 2.9 2.3 3 150 Unit V V V mA µA Static characteristics BYC8X-600_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 13 March 2009 4 of 9 NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 20 IF (A) 16 003aac976 IF dlF dt trr 12 time 8 25 % (1) (2) (3) Qr 100 % 4 IR IRM 003aac562 0 0 1 2 3 VF (V) 4 Fig 5. Reverse recovery definitions; ramp recovery Fig 4. Forward current as a function of forward voltage IF time VF VFRM VF time 001aab912 Fig 6. Forward recovery definitions BYC8X-600_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 13 March 2009 5 of 9 NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 'full pack' SOD113 A E P q m T D HE z A1 L2 L1(1) j k Q L 1 2 b1 b e w M c 0 10 scale 20 mm z(2) 0.8 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 c 0.7 0.4 D 15.8 15.2 E 10.3 9.7 e 5.08 HE max 19.0 j 2.7 1.7 k 0.6 0.4 L 14.4 13.5 L 1(1) 3.3 2.8 L2 max 0.5 m 6.5 6.3 P 3.2 3.0 Q 2.6 2.3 q 2.6 T 2.55 w 0.4 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. OUTLINE VERSION SOD113 REFERENCES IEC JEDEC 2-lead TO-220F JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 07-06-18 Fig 7. BYC8X-600_2 Package outline SOD113 (TO-220F) © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 13 March 2009 6 of 9 NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 9. Revision history Table 8. Revision history Release date 20090313 Data sheet status Product data sheet Change notice Supersedes BYC8X-600_1 Document ID BYC8X-600_2 Modifications: BYC8X-600_1 • • Forward voltage values updated in characteristics. Recovered charge parameter added in characteristics. Product data sheet - 20070905 BYC8X-600_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 13 March 2009 7 of 9 NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 10. Legal information 10.1 Data sheet status Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BYC8X-600_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 13 March 2009 8 of 9 NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 Isolation characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .7 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Contact information. . . . . . . . . . . . . . . . . . . . . . .8 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 March 2009 Document identifier: BYC8X-600_2