MBC13900NT1

Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 (Scale 2:1) MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1 1 1 Introduction The MBC13900 is a high performance transistor fabricated using a 15 GHz fτ bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package resulting in a parasitic effect reduction and RF performance enhancements. The high performance at low power makes the MBC13900 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. • Low Noise Figure, NFmin = 0.8 dB (Typ) @ 0.9 GHz, 2.0 V and 5.0 mA • Maximum Stable Gain, 22 dB @ 0.9 GHz, 2.0 V and 5.0 mA • Output Third Order Intercept, OIP3 = 18 dBm (Typ) @ 2.0 V and 5.0 mA • Ultra small SOT-343 Surface Mount Package • Available Only in Tape and Reel Packaging • Available in a lead free version (device number MBC13900NT1) (See Table 1.) 1 Device Marking or Operating Temperature Range Package 900 SOT-343 90N SOT-343 See Table 1. Contents 1 2 3 4 5 6 7 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering Information . . . . . . . . . . . . . . . . . . . 2 Electrical Specifications . . . . . . . . . . . . . . . . 2 Typical Performance Characteristics . . . . . . 4 Applications Information . . . . . . . . . . . . . . . . 9 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Product Documentation . . . . . . . . . . . . . . . . 23 Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. © Freescale Semiconductor, Inc., 2005. All rights reserved. Ordering Information Base 2 3 Emitter Emitter 1 4 Collector Figure 1. Pin Connections 2 Ordering Information Table 1 provides additional details on MBC13900 orderable parts. Table 1. Orderable Parts Details Operating Temp Range (TA.) Package Lead Frame RoHS Compliant PB-Free MSL Level Solder Temp MBC13900T1 -40° to 85° C Tape and Reel Pb Plate - No - - MBC13900NT1 -40° to 85° C Tape and Reel Pb Free Yes Yes 1 260 °C Device 3 Electrical Specifications Table 2. Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage VCEO 6.5 Vdc Collector-Base Voltage VCBO 8.0 Vdc Emitter-Base Voltage VEBO 3.0 Vdc PD(max) 0.188 2.5 W mW/°C IC 20 mA TJ(max) 150 °C Tstg -55 to 150 °C Power Dissipation @ TC = 75°C Derate Linearity above TC = 75°C at Collector Current-Continuous Maximum Junction Temperature Storage Temperature Note: Maximum Ratings and ESD 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤400 V and Machine Model (MM) ≤50 V. Additional ESD data available upon request. MBC13900 Technical Data, Rev. 1.1 2 Freescale Semiconductor Electrical Specifications Table 3. Thermal Characteristic Characteristic Symbol Max Unit RθJC 400 °C/W Thermal Resistance, Junction-to-Case Note: To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature measured on collector lead adjacent to the package body. Table 4. Electrical Characteristics Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0) V(BR)CEO 6.5 7.5 - Vdc Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 8.0 12 - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0) OFF Characteristic1 V(BR)EBO 3.0 4.0 - Vdc Collector Cutoff Current (VCB = 7.0 V, IE = 0) ICBO - - 0.1 µA Emitter Cutoff Current (VEB = 2.0 V, IC = 0) IEBO - - 0.1 µA Base Cutoff Current (VCE = 5.0 V, IB = 0) ICEO - - 0.1 µA hFE 100 - 200 - fτ - 15 - GHz 18.5 13.5 16.5 12.5 19.5 14.5 17.5 13.5 - ON Characteristic1 DC Current Gain (VCE = 2.0 V, IC = 5.0 mA) Dynamic Characteristics Current Gain Bandwidth Product (VCE = 2.0 V, IC = 15 mA, f = 0.9 GHz) Performance Characteristic Insertion Gain (VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz) (VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz) Maximum Stable Gain and/or Maximum Available Gain [Note 2] (VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz) (VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz) |S21|2 dB MSG, MAG Minimum Noise Figure (VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz) (VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz) NFmin Associated Gain at Minimum Noise Figure (VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz) (VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz) GNF dB 22 18 21 17.5 23 19 22 18.5 - - 0.8 0.9 0.8 0.9 0.9 1.1 0.9 1.1 - 22 16 21 15 - dB dB MBC13900 Technical Data, Rev. 1.1 Freescale Semiconductor 3 Typical Performance Characteristics Table 4. Electrical Characteristics (continued) Characteristic Symbol Output Third Order Intercept [Note 3] (VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz) (VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz) Min Typ Max - 18 21 13.5 19 - OIP3 Unit dBm Note: 1. Pulse width ≤300 µs, duty cycle ≤2% pulsed. 2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: S 21 S 21 2 MAG = ---------- ⎛ K ± K – 1⎞ , if K > 1, MSG = ---------, if K < 1 ⎝ ⎠ S 12 S 12 3. Zin and Zout matched for optimum IP3. 4 Typical Performance Characteristics 0.35 C, CAPACITANCE (pF) 0.3 Cob 0.25 0.2 0.15 Ccb 0.1 f = 1.0 MHz 0.05 0 0 1.0 0.5 1.5 2.5 2.0 3.0 VCB, REVERSE VOLTAGE (V) 3.5 4.0 Figure 2. Capacitance versus Voltage 162 hFE, DC CURRENT GAIN 160 3.0 V 158 156 154 2.0 V 152 150 148 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 3. hFE, DC Current Gain versus Collector Current MBC13900 Technical Data, Rev. 1.1 4 Freescale Semiconductor Typical Performance Characteristics fτ, GAIN BANDWIDTH PRODUCT (GHz) 16 14 3.0 V 12 2.0 V 10 8.0 6.0 f = 900 MHz 4.0 2.0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 IC, COLLECTOR CURRENT (mA) Figure 4. Gain-Bandwidth Product versus Collector Current fτ, GAIN BANDWIDTH PRODUCT (GHz) 16 14 3.0 V 2.0 V 12 10 8.0 6.0 f = 1.9 GHz 4.0 2.0 2.0 0 4.0 6.0 8.0 10 12 14 16 18 20 IC, COLLECTOR CURRENT (mA) MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB) Figure 5. Gain-Bandwidth Product versus Collector Current 35 VCE = 2.0 V IC = 5.0 mA 30 MSG 25 20 |S21|2 15 MAG 10 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 f, FREQUENCY (GHz) Figure 6. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency MBC13900 Technical Data, Rev. 1.1 Freescale Semiconductor 5 MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB) Typical Performance Characteristics 35 VCE = 3.0 V IC = 3.0 mA 30 25 MSG 20 15 |S21|2 MAG 10 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 f, FREQUENCY (GHz) MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB) Figure 7. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency 26 MSG/MAG 900 MHz 24 22 20 |S21|2 900 MHz 18 MSG/MAG 1.9 GHz 16 |S21|2 1.9 GHz 14 12 10 VCE = 2.0 V 8.0 6.0 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB) Figure 8. Maximum Stable/Available gain and Forward Insertion Gain versus Collector Current 27 MSG/MAG 900 MHz 25 23 |S21|2 900 MHz 21 19 MSG/MAG 1.9 GHz 17 |S21|2 1.9 GHz 15 13 11 9.0 7.0 VCE = 3.0 V 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 9. Maximum Stable/Available gain and Forward Insertion Gain versus Collector Current MBC13900 Technical Data, Rev. 1.1 6 Freescale Semiconductor Typical Performance Characteristics 1.8 1.6 22 GNF 18 1.4 NFmin 14 1.2 10 1.0 VCE = 2.0 VIC = 5.0 mA 6.0 2.0 0.5 1.0 1.5 2.0 2.5 3.0 f, FREQUENCY (GHz) 0.8 NFmin, MINIMUM NOISE FIGURE (dB) GNF, ASSOCIATED GAIN (dB) 26 0.6 4.0 3.5 28 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0.5 1.8 1.6 NFmin GNF 1.4 1.2 1.0 VCE = 3.0 VIC = 3.0 mA 1.0 1.5 2.0 2.5 f, FREQUENCY (GHz) 3.0 0.8 NFmin, MINIMUM NOISE FIGURE (dB) GNF, ASSOCIATED GAIN (dB) Figure 10. Minimum Noise Figure and Associated Gain versus Frequency 0.6 4.0 3.5 Figure 11. Minimum Noise Figure and Associated Gain versus Frequency 1.8 GNF 900 MHz 20 16 1.6 1.4 GNF 1.9 GHz 12 1.2 NFmin 1.9 GHz 8.0 4.0 0 NFmin 900 MHz 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 1.0 0.8 VCE = 2.0 V 16 18 NFmin, MINIMUM NOISE FIGURE (dB) GNF, ASSOCIATED GAIN (dB) 24 0.6 20 Figure 12. Minimum Noise Figure and Associated Gain versus Collector Current MBC13900 Technical Data, Rev. 1.1 Freescale Semiconductor 7 Typical Performance Characteristics 1.8 22 1.6 GNF 900 MHz 18 1.4 GNF 1.9 GHz 14 10 1.2 1.0 NFmin 1.9 GHz 6.0 0.8 NFmin 900 MHz 2.0 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) VCE = 3.0 V 16 18 20 NFmin, MINIMUM NOISE FIGURE (dB) GNF, ASSOCIATED GAIN (dB) 26 0.6 OIP3, OUTPUT INTERCEPT POINT (dBm) Figure 13. Minimum Noise Figure and Associated Gain versus Collector Current 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 3.0 V 2.0 V f = 900 MHz 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 OIP3, OUTPUT INTERCEPT POINT (dBm) Figure 14. Output Third Order Intercept versus Collector Current 26 24 3.0 V 22 2.0 V 20 18 16 14 12 10 8.0 6.0 4.0 f = 1.9 GHz 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 15. Output Third Order Intercept versus Collector Current MBC13900 Technical Data, Rev. 1.1 8 Freescale Semiconductor Applications Information P1dB, 1dB COMPRESSION POINT (dBm) 14 10 3.0 V 6.0 2.0 V 2.0 -2.0 -6.0 f = 900 MHz -10 -14 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 16. One dB Compression Point versus Collector Current P1dB, 1dB COMPRESSION POINT (dBm) 14 3.0 V 10 2.0 V 6.0 2.0 -2.0 -6.0 f = 1.9 GHz -10 -14 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 Figure 17. One dB Compression Point versus Collector Current 5 Applications Information A flexible applications board topology has been developed to demonstrate the performance of the MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples and assembly information is available from Freescale under part number KITMBC13900. 5.1 900 MHz LNA Figure 18 shows the schematic and Figure 19 shows the component placement for a 900 MHz LNA. The design goals for the circuit are: NF < 1.2 dB Gain > 19 dB Return Loss > 10 dB, input and output Unconditional stability from 100 MHz to 6 GHz. MBC13900 Technical Data, Rev. 1.1 Freescale Semiconductor 9 Applications Information Typical performance that can be expected from this circuit at 3.0 and 3.5 V VCC is listed in Table 5. The component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be sacrificed to improve noise figure. IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device. VCC C1 R1 R2 C4 R4 R5 L1 L2 C2 R3 L4 C3 RF Out C 7 RF In Figure 18. 900 MHz LNA Schematic C1 Gnd VCC Component C1 C2 C3 C4 C5 C6 L1 L2 L3 R1 R2 R3 R4 R5 R6 Vias PCB R2 C4 C3 C6 R6 L2 L1 R5 R4 R1 C5 R3 C2 Value 1.0 µF 3.3 pF 12 pF 0.01 µF 1.0 µF 0.3 pF 6.8 nH 5.6 nH 14 dB Return Loss > 10 dB, input and output Unconditional stability from 100 MHz to 6 GHz. Typical performance that can be expected from this circuit at 3.0 V VCC and 5.0 mA is listed in Table 6. The component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be sacrificed to improve noise figure. Input return loss can be improved at the expense of noise figure (C3, C7, L4). IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device. VCC C1 R1 R2 C4 RF In L4 C3 R4 R5 L1 L2 R3 C2 RF Out C7 Figure 20. 1900 MHz LNA Schematic MBC13900 Technical Data, Rev. 1.1 Freescale Semiconductor 11 Applications Information C1 Gnd VCC Component C1 C2 C3 C4 C5 C7 L1 L2 L3 L4 R1 R2 R3 R4 R5 Vias PCB R2 C4 C3 C6 R6 L2 L1 R5 R4 R1 C5 R3 C2 Value 1.0 µF 22 pF 22 pF 0.01 µF 1.0 µF 0.6 pF 8.2 nH 3.3 nH