Freescale Semiconductor
Technical Data
Document Number: MC33198
Rev. 2.0, 11/2006
Automotive High-Side TMOS
Driver
33198
The MC33198 is a high-side TMOS driver, dedicated to automotive
applications. It is used in conjunction with an external power MOSFET
for high-side drive applications. The device can drive and protect a
large variety of MOSFETs. The device has a CMOS compatible input
control, charge pump to drive the MOSFET gate, and fault detection
circuitry based on programmable VDS monitoring to detect shorted
loads. It also includes a programmable timer function to eliminate
undesired switch off due to in rush currents, and a status pin which
reports the output status of both on and off MOSFET states. The device
uses few external components and offers an economical solution to
large current high side switches. It also has PWM capability up to 1kHz.
HIGH-SIDE TMOS DRIVER
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
Features
• Designed for Automotive High Side Driver Application
• Works with a Wide Variety of N-Channel Power MOSFETs
ORDERING INFORMATION
• PWM Capability
• On Board Charge Pump Capable of Charging 25nF in less than 1ms
Temperature
Device
Package
with No External Components Required
Range (TA)
• Drive Inductive Load with No External Clamp Circuitry Required
MC33198D
• CMOS Logic Compatible Input Control
-40°C to 125°C
8 SOICN
MCZ33198EF/R2
• TMOS Over Current and Short Circuit Protection
• Fault Output to Report an MOSFET Overcurrent Condition
• Output Status Available when MOSFET is On or Off
• Extended Temperature Range from -40°C to 125°C
• Protected Against Automotive Transients with few External Components
• Overvoltage and Undervoltage Shutdown
• Pb-Free Packaging Designated by Suffix Code EF
VBAT
33198
VCC
DRN
INPUT
MCU
GATE
5.0V
SRC
STATUS
LOAD
TIMER
GND
Figure 1. 33198 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
VBAT
5
VCC
DRN
Rdrn
2
Over
Volt
Detect
Bias
Supply
Ref
80 µA
4
10µA
Power
ON
15V
7
-
+
C1
5V
SRC
C2
LOGIC
-
MCU
POWER
TMOS
GATE
100 µA
Under
Volt
Detect
INPUT
Charge
Pump
Vcc
+
Rsrc
1
Rpu
10µA
6
+
STATUS
C3
-
3
LOAD
8
GND
TIMER
C timer
Figure 2. 33198 Simplified Internal Block Diagram and Typical Application
33198
2
Analog Integrated Circuit Device Data
Freescale Semiconductor
PIN CONNECTIONS
PIN CONNECTIONS
SRC
1
8
TIMER
DRN
2
7
INPUT
GND
3
6
STATUS
GATE
4
5
VCC
Figure 3. 33198 Pin Connections
Table 1. 33198 Pin Definitions
Pin Number
Pin Name
Formal Name
Definition
1
SRC
Source
2
DRN
Drain
3
GND
Ground
4
GATE
Gate
Output to control the gate of external MOSFET
5
VCC
VCC
Power for the device
6
STATUS
Status
7
INPUT
Input
Control input
8
TIMER
Timer
Inrush Current detection delay timer input
Input to detect MOSFET/load status
Input to set overvoltage threshold
Ground for the device
Output signal for MOSFET status
33198
Analog Integrated Circuit Device Data
Freescale Semiconductor
3
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
Power Supply Voltage
VCC
- 0,6 to 60
V
TMOS Source Voltage
VSRC
- 0,6 to 60
V
Comparator Threshold
VDRN
- 0,6 to 60
V
Gate Output Voltage
VGATE
- 0,6 to 25
V
VIN
- 0,6 to 25
V
VST
- 0,6 to 10
V
VESD
+/-2000
V
TSTG
-55 to +150
°C
TJ
-40 to +150
°C
RJ
145
°C
TPPRT
Note 3
°C
ELECTRICAL RATINGS
Input Voltage
Status
ESD Voltage Capability
(1)
THERMAL RATINGS
Storage Temperature
Operating Junction Temperature
THERMAL RESISTANCE
Thermal Resistance J/A
Peak Package Reflow Temperature During Reflow
(2), (3)
Notes
1. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 Ω), the Machine Model (MM)
(CZAP = 200 pF, RZAP = 0 Ω), and the Charge Device Model (CDM), Robotic (CZAP = 4.0pF).
2.
3.
Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
33198
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 20 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
ILSRC
-10
-
10
µA
Threshold Current
ITHR
54
81
102
µA
DRN Leakage, Input Off, VCC Pin Open
ILEAK
-
-
10
µA
VON
Vcc + 7.0
Vcc+15
V
with NO Over VDS condition and VOUT >0.5V
IOUTN
70
110
150
µA
with Over VDS condition and VOUT >0.5V
IOUTW
5.0
10
15
µA
0.0
-
0.9
-
5.0
-
µA
-
ms
SRC PIN 1
Leakage Current
DRN PIN 2
GATE PIN 4
Output On Voltage at 1ms (Charge Pump ON)
Turn Off Current
Output Off Voltage.
VOFF
(Charge Pump OFF and VCC Pin Open)
Gate Discharge Current. (VCC Pin Open)
IOFF
Turn On Time
TON
V
Cl = 25nF ; 7.0V < VCC < 10V ; VOUT > VCC+7.0
-
-
1.0
Cl = 25nF ; 10V < VCC < 20V ; VOUT > VCC+10
-
-
1.0
7.0
-
20
at VCC = 7.0V
-
1.8
4.0
at VCC = 20V
-
2.8
6.0
VCC PIN 5
Supply Voltage Range
VCC
Quiescent Supply Current ; In = 0V
ICCQ
V
mA
Supply Current ; In = 5.0V
ICC
1.0
-
35
mA
Over Voltage Threshold
VOV
22
28
34
V
Under Voltage Threshold
VUR
-
6.0
7.0
V
VOL
0.1
0.4
1.5
V
Input Low Voltage
VIL
-
-
1.5
V
Input High Voltage
VIH
3.5
-
-
V
VHYS
0.8
-
-
V
Input Pull Down Resistor. VIN >11V
RIN
20
36
100
kΩ
Open Input Voltage
VIOP
-
-
1.0
V
STATUS PIN 6
Output Voltage @ I = 1mA
INPUT Pin 7
Input Hysteresis
33198
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 20 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
Timer Current
ITIME
7.0
10
14
µA
On Threshold
VHTH
5.2
5.5
5.8
V
Discharge Current @ VPIN8 = 5.0V
IDISCH
2.0
5.0
10
mA
Saturation Voltage @ IPIN8 = 1mA
VSAT
-
0.15
0.4
V
TIMER PIN 8
33198
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Parameter
Vcc = 7.0V
Vcc = 14V
Vcc = 21V
Unit
TYPICAL RISE TIME (TR) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4)
C = 1.0nF
15
7.0
10
µs
C = 3.0nF
60
25
40
µs
C = 10nF
140
80
90
µs
C = 30nF
730
270
340
µs
TYPICAL FALL TIME (TF) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4)
C = 1.0nF
150
230
280
µs
C = 3.0nF
430
800
950
µs
C = 10nF
1200
2300
2750
µs
C = 30nF
4800
8000
9200
µs
TIMING DIAGRAMS
INPUT Pin 7
5V
Vcc
5
VCC
1
2
SRC
DRN
6 STATUS
0V
GATE 4
GATE Pin 4
Typically (V
C
7 INPUT
TIMER
GND
8
3
CC
+ 15V)
90%
10%
t
R
t
F
Figure 4. Timing Measurements Test Schematic
33198
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
< 30V and > 20V
UNDER VOLTAGE THRESHOLD
Vbat
UNDER VOLTAGE THRESHOLD
VCC PIN 5 (V)
0V
5V
IN PIN 7 (V)
0V
110µA GATE DISCHARGE CURRENT
10µA GATE DISCHARGE CURRENT
10µA DISCHARGE
Vbat + 14V
MOSFET GATE (V)
0V
< Vbat
PIN 2 VOLTAGE
LOAD VOLTAGE (V)
MOSFET SOURCE (V)
0V
10V
5,5V
TIMER PIN 8 (V)
0V
FAULT PIN 6 (V)
5V
0V
NORMAL SWITCH ON/OFF
TEMPORY
OVERLOAD
PERMANENT OVERLOAD
MOSFET OFF
LOAD SHORTED TO VBAT
OVERVOLTAGE CONDITION
UNDERVOLTAGE CONDITION
Figure 5. Descriptive Waveform Diagram
33198
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
ELECTRICAL PERFORMANCE CURVES
ELECTRICAL PERFORMANCE CURVES
SUPPLY CURRENT (mA)
5
Ta = -40 °C
4
Ta = 125 °C
3
2
Ta = 25 °C
1
DRAIN CURRENT (uA)
g
80
Ta = 25 °C
78
Ta = - 40 °C
76
74
Ta = 125 °C
72
0
5
10
15
20
5
25
10
15
20
25
Vcc, SUPPLY VOLTAGE (V)
Vcc, SUPPLY VOLTAGE (V)
Figure 6. Supply Current versus Supply Voltage.
Pin 7 = 0V
Figure 9. Drain Current versus Supply Voltage
FAULT OUTPUT VOLTAGE (V)
SUPPLY CURRENT (mA)
2
25
20
15
10
5
Ta = 125 °C
1.5
1
Ta = 25 °C
0.5
0
0
5
10
15
20
Vcc, SUPPLY VOLTAGE (V)
25
Ta = -40 °C
1
2
3
4
FAULT OUTPUT CURRENT (mA)
5
Figure 10. Fault Output Voltage versus Current
Figure 7. Supply Current versus Supply Voltage.
Pin 7 = 5.0V
40
TIMER CURRENT (uA)
Ta = -40 °C
10
Ta = 25 °C
9
Ta = 125 °C
Vg, GATE VOLTAGE (V)
25°C
11
35
125°C
-40°C
30
25
20
8
15
5
5
10
15
20
Vcc, SUPPLY VOLTAGE (V)
25
20
10
15
Vcc, SUPPLY VOLTAGE (V)
25
Figure 11. Gate Voltage versus Voltage
Figure 8. Time Current versus Supply Voltage
33198
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
ELECTRICAL CHARACTERISTICS
ELECTRICAL PERFORMANCE CURVES
40
40
VCC = 21V
VCC = 21V
35
GATE VOLTAGE (V)
GATE VOLTAGE (V)
35
30
25
VCC = 14V
20
15
10
VCC = 7V
30
25
VCC = 14V
20
15
10
VCC = 7V
5
5
0
1
2
3
GATE OUTPUT CURRENT (mA)
4
Figure 12. Gate Voltage versus Gate Output Current.
TA = 25°C.
0
1
2
3
GATE OUTPUT CURRENT (mA)
4
Figure 14. Gate Voltage versus Gate Output Current.
TA = 40°C
35
40
VCC = 21V
30
30
GATE VOLTAGE(V)
GATE VOLTAGE (V)
35
VCC = 14V
25
20
VCC = 7V
15
10
25
20
15
No Rg
Rg = 68K
Rg = 39K
Rg = 15K
10
5
5
0
1
2
3
GATE OUTPUT CURRENT (mA)
4
Figure 13. Gate Voltage versus Gate Output Current.
TA = 125°C
0
5
7
15
9
11
13
17
Vcc , SUPPLY VOLTAGE (V)
19
21
Figure 15. Gate Voltage versus VCC and RG at
TA = 25°C
33198
10
Analog Integrated Circuit Device Data
Freescale Semiconductor
FUNCTIONAL DESCRIPTION
INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
The MC33198 is a high side TMOS driver, dedicated to
automotive applications. It is used in conjunction with an
external power MOSFET for high side drive applications. The
device can drive and protect a large variety of MOSFETs.
The device has a CMOS compatible input control, charge
pump to drive the MOSFET gate, and fault detection circuitry
based on programmable VDS monitoring to detect shorted
loads. It also includes a programmable timer function to
eliminate undesired switch off due to in rush currents, and a
status pin which reports the output status of both on and off
MOSFET states. The device uses few external components,
and offers an economical solution to large current high side
switches. It also has PWM capability up to 1kHz.
maintains the gate of the MOSFET below 0.9V when the
device has no supply, ensuring that the MOSFET remains off.
This passive pulldown current is operating even if device
VCC (pin 5) is not powered up.
POWER SUPPLY
The device has a status output (pin 6) which has an open
collector structure. This pin is used to report the MOSFET
overload condition or the LOAD status when the MOSFET is
off. The device Pin 1 (Source) is compared to a
programmable threshold at Pin 2, in both the on and off state
of the MOSFET. This allows the detection of the MOSFET
over VDS or over load conditions when the MOSFET is on
and the load short to VBAT monitoring, when the MOSFET is
in the off state. This status pin is normally connected to a pullup resistor and a micro input, and can drive up to 1.0mA.
The MC33198 can be supplied from the battery line. It is
designed with a 60V technology, making it able to sustain up
to 60V transient pulses. In the off state, with pin 7 low, the
supply current can be up to 5.0mA, and in operation, pin 7
high, the current up to 25mA. The device has an
undervoltage detection and shutdown near 7.0V. Below this
value the MOSFET is turned off. There is also a 25V
overvoltage detection which switches off the output pin 4 to
protect both the MOSFET and the load when VCC is higher
than 25V.
CHARGE PUMP
The device incorporates a self running charge pump with
an internal capacitor and is connected at Gate pin 4. To
prevent oscillation, a serial resistor can be added. The charge
pump is able to charge a 25nF capacitor in less than 1ms.
This allows the MC33198 to have a rapid response time and
to drive the external TMOS gate very quickly, allowing fast
switching on of the load. The device has an internal 15V
zener diode between pin 4 and 1, to clamp the Gate-toSource voltage and protect the MOSFET gate oxide from
destruction. See Dynamic Electrical Characteristics on page
7 for details.
BAND GAP AND REFERENCE CURRENTS
The MC33198 has an internal band gap reference voltage
which generates all the internal thresholds. This band gap is
also used to generate internal reference currents necessary
for proper operation of the device. These currents are :
Pin 2 : Drain current (typically 80mA).
Pin 4 : High and low gate discharge currents (typically
100mA and 10mA).
Pin 8 : Timer charge current (10mA typical).
All these currents are derived from the same reference
voltage and internal resistor. Their accuracy and variability is
approximately +-25% over the full temperature and voltage
range. In addition, a passive pull down current of 5.0mA
INPUT CIRCUITRY
The Input pin (pin 7) of the device is CMOS compatible and
can be directly connected to a microcontroller. The input
current is determined by an internal pull down resistor,
typically 36kW. A hysteresis of 0.8 V minimum is present at
this input.
OUTPUT STATUS
TIMER
The Timer pin (pin 8) is used in conjunction with an
external capacitor to create a delay between the overload
detection and the shutdown of the MOSFET. In case of over
load, the internal current source pin 8 will charge the
capacitor. When the voltage at pin 8 reaches the 5.5V
threshold, the internal C3 comparator will be triggered and
switch off the output to protect the MOSFET. The fault and
the MOSFET turn off condition are latched and are reset by
switching the input off and on. The delay between the
overload detection and actual MOSFET turn off is used to
allow a temporary overload which will prevent the system
from switching off during possible inrush currents or
transients.
MOSFET PROTECTION AND OUTPUT VOLTAGE
MONITORING
The MC33198 has the ability to sense the output MOSFET
source voltage and compare it to a predetermined threshold.
This threshold is programmable, using the internal reference
current of 80mA and an external resistor connected at pin 2
(DRN). The device can monitor the output load voltage, as
well as protect the MOSFET in case of overload.
The overload detection threshold must be adapted to the
MOSFET itself depending on the load to be driven and the
thermal capability of the MOSFET. In practice, the maximum
acceptable VDS of the MOSFET should be determined and
based upon the MOSFET maximum power dissipation.
33198
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
FUNCTIONAL DESCRIPTION
INTRODUCTION
In addition, the pin 8 capacitor value should be calculated
to allow inrush current.
SOURCE (PIN1) AND DRAIN (PIN2)
FUNCTIONALITY
These two pins are used to sense the MOSFET and load
conditions. Pin 2 is connected to the internal pull down
current source of 80mA and to the C2 comparator. An
external resistor connected between pin 2 and VBAT creates
a voltage drop across this resistor. The voltage drop will be
the MOSFET maximum acceptable drain to source voltage
and the C2 comparator threshold.
Pin 1 is connected to the MOSFET source pin. Two
different cases should be considered, MOSFET on or off :
When the MOSFET is on and working under normal
conditions, the VDS should be less than the voltage
developed at pin 2. So, the C2 comparator output is low and
the status is high. No current will flow through the pin 8
capacitor.
If the MOSFET encounters an overload or if the load is
shorted to Gnd, the voltage at the source will cross the pin 2
voltage and go below this pin 2 voltage, thereby turning on
the C2 comparator. The comparator will pull the status pin 6
low and will enable the charge of the pin 8 capacitor. When
the voltage at the capacitor reaches 5.5V, the C3 comparator
will switch off the MOSFET by disabling the charge pump and
the 110mA current source. The MOSFET gate will be
discharged only by the 10mA current source. The MOSFET
is latched off and can be turned back on again by switching
the input pin 7 to 0 and back to 1.
When the MOSFET is off, we have the same scheme.
Under normal conditions, the load should pull the source
voltage to Gnd, thus C2 comparator output is high and status
pin pulled low. If the load is shorted to VBAT for instance,
source pin will be higher than pin 2, The C2 output
comparator is low and the status pin is high. This is
summarized in Table 5, Status Functionality.
Table 5. Status Functionality
INPUT
PIN 7
LOAD
C2
STATUS
CONDITION SOURCE OUTPUT
PIN 6
VOLTAGE COMP
TIMER
PIN 8
Low
Normal
VPIN2
Low
High
Charge by
10 µA
source
High
Normal
>VPIN2
Low
High
Low
High
Short to GND
or Overload